2SD1133, 2SD1134
Silicon NPN Triple Diffused
ADE-208-905 (Z)
1st. Edition
Sep. 2000
Application
Low frequency power amplifier complementary pair with 2SB857 and 2SB858
Outline
1. Base
2. Collector
(Flange)
3. Emitter
TO-220AB
123
Absolute Maximum Ratings (Ta = 25°C)
Ratings
Item Symbol 2SD1133 2SD1134 Unit
Collector to base voltage VCBO 70 70 V
Collector to emitter voltage VCEO 50 60 V
Emitter to base voltage VEBO 55V
Collector current IC44A
Collector peak current IC(peak) 88A
Collector power dissipation PC*140 40 W
Junction temperature Tj 150 150 °C
Storage temperature Tstg –45 to +150 –45 to +150 °C
Note: 1. Value at TC = 25°C.
2SD1133, 2SD1134
2
Electrical Characteristics (Ta = 25°C)
2SD1133 2SD1134
Item Symbol Min Typ Max Min Typ Max Unit Test conditions
Collector to base
breakdown voltage V(BR)CBO 70——70——V I
C
= 10 µA, IE = 0
Collector to emitter
breakdown voltage V(BR)CEO 50——60——V I
C
= 50 mA, RBE = ∞
Emitter to base
breakdown voltage V(BR)EBO 5 ——5 ——V I
E
= 10 µA, IC = 0
Collector cutoff current ICBO ——1 ——1 µAV
CB = 50 V, IE = 0
DC current transfer ratio hFE1*160 — 320 60 — 320 VCE = 4V IC = 1 A*2
hFE2 35——35—— I
C
= 0.1 A*2
Collector to emitter
saturation voltage VCE(sat) ——1——1VI
C
= 2 A, IB = 0.2 A*2
Base to emitter voltage VBE ——1——1VV
CE = 4 V, IC = 1 A*2
Gain bandwidth product fT— 7 — — 7 — MHz VCE = 4 V, IC = 0.5 A*2
Notes: 1. The 2SD1133 and 2SD1134 are grouped by hFE1 as follows.
2. Pulse test.
BCD
60 to 120 100 to 200 160 to 320
Maximum Collector Dissipation
Curve
60
40
20
0 50 100 150
Case temperature TC (°C)
Collector power dissipation PC (W)
2
5
1.0
0.5
Collector current IC (A)
0.2
0.1
0.05 215 5010 20 100
Collector to emitter voltage VCE (V)
ICmax(Continuous)
Area of Safe Operation
(TC = 25°C)
(20 V, 2 A)
(50 V, 0.24 A) (60 V, 0.15 A)
(10 V, 4 A)
DC Operation
2SD1133 2SD1134
2SD1133, 2SD1134
3
TC = 25°C
IB = 0
10 mA
20
30
40
50
60
70
80
90
5
4
3
2
1
02
Collector current IC (A)
4
Collector to emitter voltage VCE (V)
8610
Typical Output Characteristics
5
2
1.0
0.5
0.2
0.1
0.05
0.02
0.010 0.6 1.00.2 0.8 1.41.2
Collector current IC (A)
Base to emitter voltage VBE (V)
0.4
T
C
= 75°C
–25°C
25°C
VCE = 4 V
Typical Transfer Characteristics
1,000
500
200
100
50
20
5
10
0.01 0.02
DC current transfer ratio hFE
0.05 2
Collector current IC (A)
0.1 0.5 50.2 1.0
VCE = 4 V
DC Current Transfer Ratio
vs. Collector Current
TC = 75°C
25
–25
1.4
1.2
1.0
0.8
0.6
0.4
0.2
00.20.01 0.02 1.00.05 0.1 0.5 2 5
Collector to Emitter Saturation Voltage
vs. Collector Current
Collector current IC (A)
Collector to emitter saturation voltage VCE(sat) (V)
IC = 10 IB
TC = 75°C
25
–25
2SD1133, 2SD1134
4
Package Dimensions
0.5 ± 0.1
2.54 ± 0.5
0.76 ± 0.1
14.0 ± 0.5 15.0 ± 0.3
2.79 ± 0.218.5 ± 0.57.8 ± 0.5
10.16 ± 0.2
2.54 ± 0.5
1.26 ± 0.15
4.44 ± 0.2
2.7 MAX
1.5 MAX
11.5 MAX
9.5
8.0
1.27
6.4 +0.2
–0.1
φ 3.6 +0.1
-0.08
Hitachi Code
JEDEC
EIAJ
Mass
(reference value)
TO-220AB
Conforms
Conforms
1.8 g
Unit: mm
2SD1133, 2SD1134
5
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
Copyright Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Hitachi Asia Ltd.
Hitachi Tower
16 Collyer Quay #20-00,
Singapore 049318
Tel : <65>-538-6533/538-8577
Fax : <65>-538-6933/538-3877
URL : http://www.hitachi.com.sg
URL NorthAmerica : http://semiconductor.hitachi.com/
Europe : http://www.hitachi-eu.com/hel/ecg
Asia : http://sicapac.hitachi-asia.com
Japan : http://www.hitachi.co.jp/Sicd/indx.htm
Hitachi Asia Ltd.
(Taipei Branch Office)
4/F, No. 167, Tun Hwa North Road,
Hung-Kuo Building,
Taipei (105), Taiwan
Tel : <886>-(2)-2718-3666
Fax : <886>-(2)-2718-8180
Telex : 23222 HAS-TP
URL : http://www.hitachi.com.tw
Hitachi Asia (Hong Kong) Ltd.
Group III (Electronic Components)
7/F., North Tower,
World Finance Centre,
Harbour City, Canton Road
Tsim Sha Tsui, Kowloon,
Hong Kong
Tel : <852>-(2)-735-9218
Fax : <852>-(2)-730-0281
URL : http://www.hitachi.com.hk
Hitachi Europe Ltd.
Electronic Components Group.
Whitebrook Park
Lower Cookham Road
Maidenhead
Berkshire SL6 8YA, United Kingdom
Tel: <44> (1628) 585000
Fax: <44> (1628) 585160
Hitachi Europe GmbH
Electronic Components Group
Dornacher Straβe 3
D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
Fax: <49> (89) 9 29 30 00
Hitachi Semiconductor
(America) Inc.
179 East Tasman Drive,
San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223
For further information write to:
Colophon 2.0
