Technische Information / Technical Information IGBT-Module IGBT-Modules BSM35GB120DLC Hochstzulassige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Tvj= 25 C VCES 1200 V TC = 80 C IC,nom. 35 A TC = 25 C IC 75 A Periodischer Kollektor Spitzenstrom repetitive peak collector current tP = 1 ms, TC = 80C ICRM 70 A Gesamt-Verlustleistung total power dissipation TC=25C, Transistor Ptot 310 W VGES +/- 20V V IF 35 A IFRM 70 A I t 2 400 A s VISOL 2,5 kV Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current tP = 1 ms Grenzlastintegral der Diode 2 I t - value, Diode VR = 0V, t p = 10ms, T Vj = 125C Isolations-Prufspannung insulation test voltage RMS, f = 50 Hz, t = 1 min. 2 Charakteristische Werte / Characteristic values min. typ. max. - 2,1 2,6 V - 2,4 2,9 V VGE(th) 4,5 5,5 6,5 V Transistor / Transistor Kollektor-Emitter Sattigungsspannung collector-emitter saturation voltage IC = 35A, V GE = 15V, Tvj = 25C VCE sat IC = 35A, V GE = 15V, Tvj = 125C Gate-Schwellenspannung gate threshold voltage IC = 1,2mA, V CE = VGE, Tvj = 25C Gateladung gate charge VGE = -15V...+15V QG - 0,35 - C Eingangskapazitat input capacitance f = 1MHz,Tvj = 25C,V CE = 25V, V GE = 0V Cies - 2 - nF Ruckwirkungskapazitat reverse transfer capacitance f = 1MHz,Tvj = 25C,V CE = 25V, V GE = 0V Cres - 0,13 - nF Kollektor-Emitter Reststrom collector-emitter cut-off current VCE = 1200V, V GE = 0V, Tvj = 25C ICES - - 5 mA Gate-Emitter Reststrom gate-emitter leakage current VCE = 0V, V GE = 20V, Tvj = 25C IGES - - 400 nA prepared by: Mod-D2; Mark Munzer date of publication: 2003-01-10 approved by: SM TM; Wilhelm Rusche revision: 3.0 1(8) http://store.iiic.cc/ DB_BSM35GB120DLC_3.0 2003-01-10 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM35GB120DLC Charakteristische Werte / Characteristic values min. Transistor / Transistor Einschaltverzogerungszeit (ind. Last) turn on delay time (inductive load) VGE = 15V, R G = 22, Tvj = 25C td,on VGE = 15V, R G = 22, Tvj = 125C Anstiegszeit (induktive Last) rise time (inductive load) tr td,off VGE = 15V, R G = 22, Tvj = 25C Einschaltverlustenergie pro Puls turn-on energy loss per pulse IC = 35A, V CE = 600V, V GE = 15V Abschaltverlustenergie pro Puls turn-off energy loss per pulse IC = 35A, V CE = 600V, V GE = 15V RG = 22, Tvj = 125C, L = 120nH RG = 22, Tvj = 125C, L = 120nH - s - s - 0,05 - s - 0,05 - s - 0,25 - s - 0,30 - s tf - 0,03 - s - 0,07 - s Eon - 4,5 - mJ Eoff - 4,3 - mJ ISC - 320 - A LCE - 40 - nH RCC`+EE` - 1,2 - m min. typ. max. tP 10s, V GE 15V, R G = 22 TVj125C, V CC=900V, V CEmax=VCES -LCE *di/dt Modulinduktivitat stray inductance module Modul Leitungswiderstand, Anschlusse - Chip module lead resistance, terminals - chip 0,05 0,06 IC = 35A, V CE = 600V VGE = 15V, R G = 22, Tvj = 125C Kurzschluverhalten SC Data - IC = 35A, V CE = 600V VGE = 15V, R G = 22, Tvj = 25C VGE = 15V, R G = 22, Tvj = 125C Fallzeit (induktive Last) fall time (inductive load) max. IC = 35A, V CE = 600V VGE = 15V, R G = 22, Tvj = 25C VGE = 15V, R G = 22, Tvj = 125C Abschaltverzogerungszeit (ind. Last) turn off delay time (inductive load) typ. IC = 35A, V CE = 600V TC=25C Charakteristische Werte / Characteristic values Diode / Diode Durchlaspannung forward voltage IF = 35A, V GE = 0V, Tvj = 25C Ruckstromspitze peak reverse recovery current IF = 35A, - di F/dt = 900A/s VF IF = 35A, V GE = 0V, Tvj = 125C VR = 600V, V GE = -15V, Tvj = 25C IRM VR = 600V, V GE = -15V, Tvj = 125C Sperrverzogerungsladung recovered charge 1,8 2,3 V 1,7 2,2 V - 36 - A - 45 - A IF = 35A, - di F/dt = 900A/s VR = 600V, V GE = -15V, Tvj = 25C Qr VR = 600V, V GE = -15V, Tvj = 125C Abschaltenergie pro Puls reverse recovery energy - - 3,6 - C - 7,6 - C - 1,3 - mJ - 2,8 - mJ IF = 35A, - di F/dt = 900A/s VR = 600V, V GE = -15V, Tvj = 25C VR = 600V, V GE = -15V, Tvj = 125C 2(8) http://store.iiic.cc/ Erec DB_BSM35GB120DLC_3.0 2003-01-10 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM35GB120DLC Thermische Eigenschaften / Thermal properties min. typ. max. - - 0,40 K/W - - 0,70 K/W RthCK - 0,05 - K/W Hochstzulassige Sperrschichttemperatur maximum junction temperature Tvj max - - 150 C Betriebstemperatur operation temperature Tvj op -40 - 125 C Tstg -40 - 125 C RthJC Innerer Warmewiderstand thermal resistance, junction to case Transistor / transistor, DC Ubergangs-Warmewiderstand thermal resistance, case to heatsink pro Modul / per module = 1 W/m * K / grease = 1 W/m * K Diode/Diode, DC Lagertemperatur storage temperature Mechanische Eigenschaften / Mechanical properties Gehause, siehe Anlage case, see appendix Innere Isolation internal insulation Al2O3 Kriechstrecke creepage distance 20 mm Luftstrecke clearance distance 11 mm CTI comperative tracking index 275 Anzugsdrehmoment f. mech. Befestigung mounting torque Schraube / screw M6 M 3,0 - 6,0 Nm Anzugsdrehmoment f. elektr. Anschlusse terminal connection torque Anschlusse / terminals M5 M 2,5 - 5,0 Nm Gewicht weight G 250 g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehorigen Technischen Erlauterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3(8) http://store.iiic.cc/ DB_BSM35GB120DLC_3.0 2003-01-10 Technische Information / Technical Information BSM35GB120DLC IGBT-Module IGBT-Modules Ausgangskennlinie (typisch) Output characteristic (typical) IC = f (VCE) V GE = 15V 70 63 Tvj = 25C 56 Tvj = 125C IC [A] 49 42 35 28 21 14 7 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 VCE [V] Ausgangskennlinienfeld (typisch) Output characteristic (typical) IC = f (VCE) T vj = 125C 70 63 VGE = 17V 56 VGE = 15V 49 VGE = 13V IC [A] VGE = 11V 42 VGE = 9V VGE = 7V 35 28 21 14 7 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 VCE [V] 4(8) http://store.iiic.cc/ DB_BSM35GB120DLC_3.0 2003-01-10 Technische Information / Technical Information BSM35GB120DLC IGBT-Module IGBT-Modules Ubertragungscharakteristik (typisch) Transfer characteristic (typical) IC = f (VGE) VCE = 20V 70 63 Tvj = 25C 56 Tvj = 125C IC [A] 49 42 35 28 21 14 7 0 5 6 7 8 9 10 11 12 VGE [V] Durchlakennlinie der Inversdiode (typisch) (VF) IF = f 70 63 Tvj = 25C 56 Tvj = 125C IF [A] 49 42 35 28 21 14 7 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 VF [V] 5(8) http://store.iiic.cc/ DB_BSM35GB120DLC_3.0 2003-01-10 Technische Information / Technical Information BSM35GB120DLC IGBT-Module IGBT-Modules Schaltverluste (typisch) Eon = f (IC) , Eoff = f (IC) , Erec = f (IC) Switching losses (typical) VGE=15V, RG =22 , VCE = 600V, T vj = 125C 12 Eoff 10 Eon Erec E [mJ] 8 6 4 2 0 0 10 20 30 40 50 60 70 IC [A] Schaltverluste (typisch) Switching losses (typical) Eon = f (RG) , Eoff = f (RG) , Erec = f (RG) VGE=15V , I C = 35A , VCE = 600V , T vj = 125C 21 Eoff 18 Eon Erec E [mJ] 15 12 9 6 3 0 0 30 60 90 120 150 180 210 RG [] 6(8) http://store.iiic.cc/ DB_BSM35GB120DLC_3.0 2003-01-10 Technische Information / Technical Information BSM35GB120DLC IGBT-Module IGBT-Modules Transienter Warmewiderstand Transient thermal impedance ZthJC = f (t) 1 Zth:Diode Zth:IGBT 0,01 0,001 0,001 0,01 0,1 1 10 t [s] i ri [K/kW] : IGBT i [s] : IGBT ri [K/kW] : Diode i [s] : Diode 1 2 3 4 78,07 262,83 20,86 38,24 0,009 0,045 0,073 0,229 41,47 305,3 271,51 81,72 0,003 0,022 0,064 0,344 Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) VGE = 15V, R G = 22 , T vj= 125C 80 70 60 IC [A] ZthJC [K / W] 0,1 50 IC,Modul IC,Chip 40 30 20 10 0 0 200 400 600 800 1000 1200 1400 VCE [V] 7(8) http://store.iiic.cc/ DB_BSM35GB120DLC_3.0 2003-01-10 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM35GB120DLC 8(8) http://store.iiic.cc/ DB_BSM35GB120DLC_3.0 2003-01-10 Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. This Data Sheet is describing the specification of the products for which a warranty is granted exclusively pursuant the terms and conditions of the supply agreement. There will be no guarantee of any kind for the product and its specifications. Changes to the Data Sheet are reserved. You and your technical departments will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to such application. Should you require product information in excess of the data given in the Data Sheet, please contact your local Sales Office via "www.eupec.com / sales & contact". Warning Due to technical requirements the products may contain dangerous substances. For information on the types in question please contact your local Sales Office via "www.eupec.com / sales & contact". http://store.iiic.cc/