BSM35GB120DLC - Infineon Technologies [EUPEC]

Technische Information / Technical Information

IGBT-Module

IGBT-Modules BSM35GB120DLC

Höchstzulässige Werte / Maximum rated values

Elektrische Eigenschaften / Electrical properties

Kollektor-Emitter-Sperrspannung

collector-emitter voltage Tvj= 25° C VCES 1200 V

Kollektor-Dauergleichstrom TC = 80 °C IC,nom. 35 A

DC-collector current TC = 25 °C IC75 A

Periodischer Kollektor Spitzenstrom

repetitive peak collector current tP = 1 ms, TC = 80°C ICRM 70 A

Gesamt-Verlustleistung

total power dissipation TC=25°C, Transistor Ptot 310 W

Gate-Emitter-Spitzenspannung

gate-emitter peak voltage VGES +/- 20V V

Dauergleichstrom

DC forward current IF35 A

Periodischer Spitzenstrom

repetitive peak forw. current tP = 1 ms IFRM 70 A

Grenzlastintegral der Diode

I2t - value, Diode VR = 0V, tp = 10ms, TVj = 125°C I2t400 A2s

Isolations-Prüfspannung

insulation test voltage RMS, f = 50 Hz, t = 1 min. VISOL 2,5 kV

Charakteristische Werte / Characteristic values

Transistor / Transistor min. typ. max.

Kollektor-Emitter Sättigungsspannung IC = 35A, VGE = 15V, Tvj = 25°C VCE sat - 2,1 2,6 V

collector-emitter saturation voltage IC = 35A, VGE = 15V, Tvj = 125°C - 2,4 2,9 V

Gate-Schwellenspannung

gate threshold voltage IC = 1,2mA, VCE = VGE, Tvj = 25°C VGE(th) 4,5 5,5 6,5 V

Gateladung

gate charge VGE = -15V...+15V QG- 0,35 - µC

Eingangskapazität

input capacitance f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V Cies -2-nF

Rückwirkungskapazität

reverse transfer capacitance f = 1MHz,Tvj = 25°C,VCE = 25V, VGE = 0V Cres - 0,13 - nF

Kollektor-Emitter Reststrom

collector-emitter cut-off current

Gate-Emitter Reststrom

gate-emitter leakage current VCE = 0V, VGE = 20V, Tvj = 25°C IGES - - 400 nA

prepared by: Mod-D2; Mark Münzer date of publication: 2003-01-10

approved by: SM TM; Wilhelm Rusche revision: 3.0

VCE = 1200V, VGE = 0V, Tvj = 25°C ICES --5mA

1(8) DB_BSM35GB120DLC_3.0

2003-01-10

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Technische Information / Technical Information

IGBT-Module

IGBT-Modules BSM35GB120DLC

Charakteristische Werte / Characteristic values

Transistor / Transistor min. typ. max.

Einschaltverzögerungszeit (ind. Last) IC = 35A, VCE = 600V

turn on delay time (inductive load) VGE = ±15V, RG = 22Ω, Tvj = 25°C td,on - 0,05 - µs

VGE = ±15V, RG = 22Ω, Tvj = 125°C - 0,06 - µs

Anstiegszeit (induktive Last) IC = 35A, VCE = 600V

rise time (inductive load) VGE = ±15V, RG = 22Ω, Tvj = 25°C tr- 0,05 - µs

VGE = ±15V, RG = 22Ω, Tvj = 125°C - 0,05 - µs

Abschaltverzögerungszeit (ind. Last) IC = 35A, VCE = 600V

turn off delay time (inductive load) VGE = ±15V, RG = 22Ω, Tvj = 25°C td,off - 0,25 - µs

VGE = ±15V, RG = 22Ω, Tvj = 125°C - 0,30 - µs

Fallzeit (induktive Last) IC = 35A, VCE = 600V

fall time (inductive load) VGE = ±15V, RG = 22Ω, Tvj = 25°C tf- 0,03 - µs

VGE = ±15V, RG = 22Ω, Tvj = 125°C - 0,07 - µs

Einschaltverlustenergie pro Puls IC = 35A, VCE = 600V, VGE = ±15V

turn-on energy loss per pulse RG = 22Ω, Tvj = 125°C, Lσ = 120nH Eon - 4,5 - mJ

Abschaltverlustenergie pro Puls IC = 35A, VCE = 600V, VGE = ±15V

turn-off energy loss per pulse RG = 22Ω, Tvj = 125°C, Lσ = 120nH Eoff - 4,3 - mJ

Kurzschlußverhalten tP ≤ 10µs, VGE ≤ 15V, RG = 22Ω

SC Data TVj≤125°C, VCC=900V, VCEmax=VCES -LσCE ·di/dt ISC - 320 - A

Modulinduktivität

stray inductance module LσCE - 40 - nH

Modul Leitungswiderstand, Anschlüsse – Chip

module lead resistance, terminals – chip TC=25°C RCC‘+EE‘ - 1,2 - mΩ

Charakteristische Werte / Characteristic values

Diode / Diode min. typ. max.

Durchlaßspannung IF = 35A, VGE = 0V, Tvj = 25°C VF- 1,8 2,3 V

forward voltage IF = 35A, VGE = 0V, Tvj = 125°C - 1,7 2,2 V

Rückstromspitze IF = 35A, - diF/dt = 900A/µs

peak reverse recovery current VR = 600V, VGE = -15V, Tvj = 25°C IRM -36-A

VR = 600V, VGE = -15V, Tvj = 125°C -45-A

Sperrverzögerungsladung IF = 35A, - diF/dt = 900A/µs

recovered charge VR = 600V, VGE = -15V, Tvj = 25°C Qr- 3,6 - µC

VR = 600V, VGE = -15V, Tvj = 125°C - 7,6 - µC

Abschaltenergie pro Puls IF = 35A, - diF/dt = 900A/µs

reverse recovery energy VR = 600V, VGE = -15V, Tvj = 25°C Erec - 1,3 - mJ

VR = 600V, VGE = -15V, Tvj = 125°C - 2,8 - mJ

2(8) DB_BSM35GB120DLC_3.0

2003-01-10

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Technische Information / Technical Information

IGBT-Module

IGBT-Modules BSM35GB120DLC

Thermische Eigenschaften / Thermal properties

min. typ. max.

Innerer Wärmewiderstand Transistor / transistor, DC RthJC - - 0,40 K/W

thermal resistance, junction to case Diode/Diode, DC - - 0,70 K/W

Übergangs-Wärmewiderstand

thermal resistance, case to heatsink

pro Modul / per module

λΠαστε = 1 W/m * K / λgrease = 1 W/m * K RthCK - 0,05 - K/W

Höchstzulässige Sperrschichttemperatur

maximum junction temperature Tvj max - - 150 °C

Betriebstemperatur

operation temperature Tvj op -40 - 125 °C

Lagertemperatur

storage temperature Tstg -40 - 125 °C

Mechanische Eigenschaften / Mechanical properties

Gehäuse, siehe Anlage

case, see appendix

Innere Isolation

internal insulation Al2O3

Kriechstrecke

creepage distance 20 mm

Luftstrecke

clearance distance 11 mm

CTI

comperative tracking index 275

Anzugsdrehmoment f. mech. Befestigung

mounting torque

Anzugsdrehmoment f. elektr. Anschlüsse

terminal connection torque

Gewicht

weight G 250 g

Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.

Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.

This technical information specifies semiconductor devices but promises no characteristics. It is

valid in combination with the belonging technical notes.

Schraube / screw M6

Anschlüsse / terminals M5

M 3,0 - 6,0 Nm

M 2,5 - 5,0 Nm

3(8) DB_BSM35GB120DLC_3.0

2003-01-10

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Technische Information / Technical Information

IGBT-Module

IGBT-Modules BSM35GB120DLC

IC [A]

VCE [V]

IC [A]

VCE [V]

0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0

Tvj = 25°C

Tvj = 125°C

Ausgangskennlinie (typisch) IC = f (VCE)

Output characteristic (typical) VGE = 15V

0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0

VGE = 17V

VGE = 15V

VGE = 13V

VGE = 11V

VGE = 9V

VGE = 7V

Ausgangskennlinienfeld (typisch) IC = f (VCE)

Output characteristic (typical) Tvj = 125°C

4(8) DB_BSM35GB120DLC_3.0

2003-01-10

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Technische Information / Technical Information

IGBT-Module

IGBT-Modules BSM35GB120DLC

IC [A]

VGE [V]

IF [A]

VF [V]

5 6 7 8 9 10 11 12

Tvj = 25°C

Tvj = 125°C

Übertragungscharakteristik (typisch) IC = f (VGE)

Transfer characteristic (typical) VCE = 20V

0,0 0,5 1,0 1,5 2,0 2,5 3,0

Tvj = 25°C

Tvj = 125°C

Durchlaßkennlinie der Inversdiode (typisch) IF = f

(VF)

5(8) DB_BSM35GB120DLC_3.0

2003-01-10

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Technische Information / Technical Information

IGBT-Module

IGBT-Modules BSM35GB120DLC

E [mJ]

IC [A]

E [mJ]

RG [Ω]

0 10203040506070

Eoff

Eon

Erec

Schaltverluste (typisch) Eon = f (IC) , Eoff = f (IC) , Erec = f (IC)

Switching losses (typical) VGE=±15V, RG =22 Ω, VCE = 600V, Tvj = 125°C

0 30 60 90 120 150 180 210

Eoff

Eon

Erec

Schaltverluste (typisch) Eon = f (RG) , Eoff = f (RG) , Erec = f (RG)

Switching losses (typical) VGE=±15V , IC = 35A , VCE = 600V , T vj = 125°C

6(8) DB_BSM35GB120DLC_3.0

2003-01-10

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Technische Information / Technical Information

IGBT-Module

IGBT-Modules BSM35GB120DLC

ZthJC

[K / W]

t [s]

i 1234

ri [K/kW] : IGBT 78,07 262,83 20,86 38,24

i [s] : IGBT 0,009 0,045 0,073 0,229

i [K/kW] : Diode 41,47 305,3 271,51 81,72

i [s] : Diode 0,003 0,022 0,064 0,344

IC [A]

VCE [V]

Sicherer Arbeitsbereich (RBSOA)

Reverse bias safe operation area (RBSOA) VGE = 15V, RG = 22 Ω, Tvj= 125°C

Transienter Wärmewiderstand ZthJC = f (t)

Transient thermal impedance

0 200 400 600 800 1000 1200 1400

IC,Modul

IC,Chip

0,001

0,01

0,1

0,001 0,01 0,1 1 10

Zth:Diode

Zth:IGBT

7(8) DB_BSM35GB120DLC_3.0

2003-01-10

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Technische Information / Technical Information

IGBT-Module

IGBT-Modules BSM35GB120DLC

8(8) DB_BSM35GB120DLC_3.0

2003-01-10

http://store.iiic.cc/

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