N-CHANNEL
POWER MOSFET
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Semelab Limited
imitedimited
imited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 9118
Issue 1
Page 1 of 3
IRF450
• Hermeticaly Sealed TO-3 Metal Package
• Simple Drive Requirements
• Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VDS Drain – Source Voltage 500V
VGS Gate – Source Voltage ±20V
ID Continuous Drain Current Tc = 25°C 13A
ID Continuous Drain Current Tc = 100°C 8A
IDM Pulsed Drain Current
(2)
52A
PD Total Power Dissipation at Tc = 25°C 150W
Derate Above 25°C 1.2W/°C
TJ Junction Temperature Range -55 to +150°C
Tstg Storage Temperature Range -55 to +150°C
THERMAL PROPERTIES
Symbols Parameters Max. Units
RθJC
Thermal Resistance, Junction To Case 0.83
RθJA
Thermal Resistance, Junction To Ambient 30
°C/W
INTERNAL PACKAGE INDUCTANCE
Symbols Parameters Typ. Units
LD Internal Drain Inductance 5
LS Internal Source Inductance 13
nH
Notes
NotesNotes
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
(2) Repetitive Rating: Pulse Width limited by max. junction temperature.
N-CHANNEL
POWER MOSET
IRF450
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 9118
Issue 1
Page 2 of 3
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min.
Typ. Max.
Units
BVDSS Drain-Source Breakdown
Voltage VGS = 0 ID = 250 µA 500 V
RDS(on)
(1)
Static Drain-Source
On-State Resistance VGS = 10V ID = 7A 0.4 Ω
VGS(th) Gate Threshold Voltage VDS = VGS ID = 250µA 2 4 V
gfs
(1)
Forward Transconductance VDS ≥ 15V I D = 7A 6 S(Ʊ)
VDS = 500V VGS = 0 250
IDSS Zero Gate Voltage
Drain Current VDS = 400V TC = 125°C 1000
µA
IGSS Forward Gate-Source
Leakage VGS = 20V 100
IGSS Reverse Gate-Source
Leakage VGS = -20V -100
nA
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VGS = 0 2700
Coss Output Capacitance VDS = 25V 600
Crss Reverse Transfer
Capacitance f = 1.0MHz 240
pF
Qg Total Gate Charge VGS = 10V 82
Qgs Gate-Source Charge ID = 16A 40
Qgd Gate-Drain Charge VDS = 0.8 BVDSS 42
nC
td(on) Turn-On Delay Time 35
tr Rise Time 190
td(off) Turn-Off Delay Time 170
tf Fall Time
VDD = 250V
ID = 12A
RG = 2.35Ω 130
ns
SOURCE-DRAIN DIODE CHARACTERISTICS
IS Continuous Source Current 13
ISM
(1)
Pulse Source Current 52
A
IS = 13A TJ = 25°C
VSD
(1)
Diode Forward Voltage VGS = 0
1.4 V
Trr Reverse Recovery Time IS = 13A TJ = 150°C 1300 ns
Qrr
(1)
Reverse Recovery Charge VDD ≤ 50V di/dt = 100A/µs 7.4 µC
N-CHANNEL
POWER MOSET
IRF450
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 9118
Issue 1
Page 3 of 3
MECHANICAL DATA
Dimensions in mm (inches)
1 2
3
(case)
25.15 (0.99)
26.67 (1.05)
10.67 (0.42)
11.18 (0.44)
38.61 (1.52)
39.12 (1.54)
29.9 (1.177)
30.4 (1.197)
16.64 (0.655)
17.15 (0.675)
3.84 (0.151)
4.09 (0.161)
0.97 (0.060)
1.10 (0.043)
7.92 (0.312)
12.70 (0.50)
22.23
(0.875)
max.
6.35 (0.25)
9.15 (0.36)
1.52 (0.06)
3.43 (0.135)
TO3
(TO204
-
AA)
Pin 1 - Gate Pin 2 - Source Case - Drain
