2N6056 - ON Semiconductor - Datasheet.Live

NPN Darlington Silicon Power

Transistor

. . . designed for general–purpose amplifier and low frequency

switching applications.

•High DC Current Gain —

hFE = 3000 (Typ) @ IC = 4.0 Adc

•Collector–Emitter Sustaining Voltage — @ 100 mA

VCEO(sus) = 80 Vdc (Min)

•Low Collector–Emitter Saturation Voltage —

VCE(sat) = 2.0 Vdc (Max) @ IC = 4.0 Adc

= 3.0 Vdc (Max) @ IC = 8.0 Adc

•Monolithic Construction with Built–In Base–Emitter Shunt Resistors

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS (1)

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎ

Symbol

ÎÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎ

VCEO

ÎÎÎÎ

80

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎÎ

VCB

ÎÎÎÎ

80

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎÎ

VEB

ÎÎÎÎ

5.0

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

Peak

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

IC

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

8.0

16

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎÎ

IB

ÎÎÎÎ

120

ÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Device Dissipation @ TC = 25C

Derate above 25C

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

PD

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

100

0.571

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

Watts

W/C

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction Temperature

Range

ÎÎÎÎÎ

TJ, Tstg

ÎÎÎÎ

–65 to +200

ÎÎÎÎ

C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

RθJC

ÎÎÎÎ

1.75

ÎÎÎÎ

C/W

(1) Indicates JEDEC Registered Data

100

00 25 50 75 100 125 150 200

Figure 1. Power Derating

TC, TEMPERATURE (°C)

PD, POWER DISSIPATION (WATTS)

60

80

175

40

20

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

ON Semiconductor

 Semiconductor Components Industries, LLC, 2001

March, 2001 – Rev. 2 1Publication Order Number:

2N6056/D

2N6056

ON Semiconductor Preferred Device

DARLINGTON

8 AMPERE

SILICON

POWER TRANSISTOR

80 VOLTS

100 WATTS

CASE 1–07

TO–204AA

(TO–3)

2N6056

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2

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (2)

(IC = 100 mAdc, IB = 0)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

VCEO(sus)

ÎÎÎ

Î

ÎÎÎ

80

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

—

ÎÎÎ

Î

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 40 Vdc, IB = 0)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

ICEO

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

0.5

ÎÎÎ

Î

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = Rated VCB, VBE(off) = 1.5 Vdc)

(VCE = Rated VCB, VBE(off) = 1.5 Vdc, TC = 150C)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

ICEX

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

0.5

5.0

ÎÎÎ

Î

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

IEBO

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

2.0

ÎÎÎ

Î

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (2)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 4.0 Adc, VCE = 3.0 Vdc)

(IC = 8.0 Adc, VCE = 3.0 Vdc)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

hFE

ÎÎÎ

Î

ÎÎÎ

750

100

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

18000

—

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 4.0 Adc, IB = 16 mAdc)

(IC = 8.0 Adc, IB = 80 mAdc)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

VCE(sat)

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

2.0

3.0

ÎÎÎ

Î

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Saturation Voltage

(IC = 8.0 Adc, IB = 80 mAdc)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

VBE(sat)

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

4.0

ÎÎÎ

Î

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage

(IC = 4.0 Adc, VCE = 3.0 Vdc)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

VBE(on)

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

2.8

ÎÎÎ

Î

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Magnitude of Common Emitter Small–Signal Short Circuit Current Transfer Ratio

(IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)

ÎÎÎÎÎ

|hfe|

ÎÎÎ

4.0

ÎÎÎÎ

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

Cob

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

200

ÎÎÎ

Î

ÎÎÎ

pF

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small–Signal Current Gain

(IC = 3.0 Adc, VCE = 3.0 Vdc, f = 1.0 kHz)

ÎÎÎÎÎ

hfe

ÎÎÎ

300

ÎÎÎÎ

—

ÎÎÎ

—

*Indicates JEDEC Registered Data.

(2) Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%

2N6056

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3

Figure 2. Switching Times Test Circuit

5.0

0.1

Figure 3. Switching Times

IC, COLLECTOR CURRENT (AMP)

t, TIME (s)µ

2.0

0.2 1.0 3.0 10

0.7

1.0 tf

tr

ts

td @ VBE(off) = 0

V2

approx

+12 V

V1

approx

-8.0 V

tr, tf ≤ 10 ns

DUTY CYCLE = 1.0%

25 µs

0

RB

51 D1

+4.0 V

VCC

-30 V

RC

TUT

≈ 8.0 k ≈ 50

SCOPE

for td and tr, D1 is disconnected

and V2 = 0

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1 MUST BE FAST RECOVERY TYPE, e.g.,

1N5825 USED ABOVE IB ≈ 100 mA

MSD6100 USED BELOW IB ≈ 100 mA

0.5

0.3

5.0 7.0

For NPN test circuit reverse diode, polarities and input pulses.

3.0

0.2

0.1

0.07

0.05

0.3 0.5 0.7 2.0

VCC = 30 V

IC/IB = 250

IB1 = IB2

TJ = 25°C

Figure 4. Thermal Response

t, TIME (ms)

1.0

0.010.1

0.5

0.2

0.1

0.05

0.02

r(t), TRANSIENT THERMAL

RESISTANCE (NORMALIZED)

0.5 1.0 2.0 5.0 10 20 50 100 200 1000500

RθJC(t) = r(t) RθJC

RθJC = 1.75°C/W  2N6056

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) θJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.02

0.01

SINGLE PULSE

0.1

0.7

0.3

0.07

0.03

0.2 0.3 3.0 30 3000.7 7.0 70 700

2N6056

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ACTIVE–REGION SAFE OPERATING AREA

50

1.0

Figure 5. Safe Operating Area

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

20

10

5.0

2.0

0.05 5.0 10

SECOND BREAKDOWN LIMIT

BONDING WIRE LIMIT

THERMALLY LIMITED

@ TC = 25°C (SINGLE PULSE)

7.0

IC, COLLECTOR CURRENT (AMP)

TJ = 200°C

dc

0.1 ms

1.0

0.5

0.1

0.2

2.0 3.0 20 30 50 70 100

0.5 ms

1.0 ms

5.0 ms

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC – VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 200C;

TC is variable depending on conditions. Second breakdown

pulse limits are valid for duty cycles to 10% provided TJ(pk)

 200C. TJ(pk) may be calculated from the data in

Figure 4. A t high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

300

0.1

Figure 6. Small–Signal Current Gain

VR, REVERSE VOLTAGE (VOLTS)

30 1.0 2.0 1005.00.2 0.5

C, CAPACITANCE (pF)

200

70

50

TJ = 25°C

100

Cob

10,000

1.0

Figure 7. Capacitance

f, FREQUENCY (kHz)

10 2.0 5.0 20 50 100010010 10 20 50

hfe , SMALL-SIGNAL CURRENT GAIN

5000

3000

500

200

100

50

200 500

TC = 25°C

VCE = 3.0 Vdc

IC = 3.0 Adc

2000

1000

300

30

20

Cib

2N6056

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VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 8. DC Current Gain Figure 9. Collector Saturation Region

Figure 10. “On” Voltage

IC, COLLECTOR CURRENT (AMP)

hFE, DC CURRENT GAIN

VCE = 3.0 V

TJ = 150°C

25°C

-55°C

IB, BASE CURRENT (mA)

TJ = 25°C

IC, COLLECTOR CURRENT (AMP)

TJ = 25°C

V, VOLTAGE (VOLTS)

VBE @ VCE = 3.0 V

20,000

0.1

200 0.2 0.5 1.0 2.0 107.0

10,000

5000

3000

2000

1000

500

300

3.0 5.0

3.0

1.0

1.8

2.2

2.6

1.4

3.0

0.1 0.3 0.5 1.0 3.0 10

2.5

2.0

1.5

1.0

0.5 2.0 7.05.0

0.3 1.0 2.0 10 305.0 203.0 7.00.3 0.7 0.5 0.7

0.2 0.7

IC = 2.0 A 4.0 A 6.0 A

VBE(sat) @ IC/IB = 250

VCE(sat) @ IC/IB = 250

2N6056

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6

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO-204AA OUTLINE SHALL APPLY.

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.550 REF 39.37 REF

B--- 1.050 --- 26.67

C0.250 0.335 6.35 8.51

D0.038 0.043 0.97 1.09

E0.055 0.070 1.40 1.77

G0.430 BSC 10.92 BSC

H0.215 BSC 5.46 BSC

K0.440 0.480 11.18 12.19

L0.665 BSC 16.89 BSC

N--- 0.830 --- 21.08

Q0.151 0.165 3.84 4.19

U1.187 BSC 30.15 BSC

V0.131 0.188 3.33 4.77

A

N

E

C

K

–T– SEATING

PLANE

2 PL

D

M

Q

M

0.13 (0.005) Y M

T

M

Y

M

0.13 (0.005) T

–Q–

–Y–

2

1

UL

GB

V

H

CASE 1–07

TO–204AA (TO–3)

ISSUE Z

2N6056

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7

Notes

2N6056

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8

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