2SK2373 Silicon N-Channel MOS FET November 1996 Application Low frequency power switching Features * * * * * Low on-resistance Small package Low drive current 4 V gate drive device can be driven from 5 V source. Suitable for low signal load switch Outline MPAK 3 1 2 D 1. Source 2. Gate 3. Drain G S 2SK2373 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage VDSS 30 V Gate to source voltage VGSS 20 V Drain current ID 0.2 A 0.4 A 0.2 A 150 mW Drain peak current ID(pulse)* Body to drain diode reverse drain current IDR 2 1 Channel dissipation Pch* Channel temperature Tch 150 C Storage temperature Tstg -55 to +150 C Notes 1. PW 100 s, duty cycle 10 % 2. Marking is "ZE-". 2 2SK2373 Electrical Characteristics (Ta = 25C) Item Symbol Min Typ Max Unit Test Conditions Drain to source breakdown voltage V(BR)DSS 30 -- -- V ID = 100 mA, VGS = 0 Gate to source breakdown voltage V(BR)GSS 20 -- -- V IG = 100 A, VDS = 0 Gate to source leak current IGSS -- -- 2 A VGS = 16 V, VDS = 0 Zero gate voltage drain current IDSS -- -- 1 A VDS = 30 V, VGS = 0 Gate to source cutoff voltage 1.0 -- 2.0 V ID = 10 A, VDS = 5 V -- 1.4 2.5 ID = 20 mA 1 VGS = 4 V* -- 1.0 1.4 ID = 10 mA 1 VGS = 10 V* VDS = 10 V VGS = 0 f = 1 MHz VGS(off) Static drain to source on state RDS(on) resistance Input capacitance Ciss -- 17.8 -- pF Output capacitance Coss -- 25.4 -- pF Reverse transfer capacitance Crss -- 3.7 -- pF Turn-on delay time td(on) -- 50 -- ns Rise time tr -- 125 -- ns Turn-off delay time td(off) -- 660 -- ns Fall time tf -- 400 -- ns Note ID = 0.1 A VGS = 10 V RL = 100 PW = 2 s 1. Pulse Test 3 1 I D (A) 1 ms 0.03 tio ra 0.01 0.003 0.001 50 100 Ambient Temperature 150 200 0.1 Ta (C) Typical Output Characteristics Ta = 25 C 1 shot pulse 1 0.3 3 10 30 100 Drain to Source Voltage V DS (V) Typical Transfer Characteristics 2.0 0.5 Pulse Test 5V 4.5 V 1.2 4V 0.8 3.5 V 0.4 3V ID (A) 1.6 Drain Current I D (A) Operation in this area is limited by R DS(on) n 50 0.1 pe 100 0.3 O Drain Current 150 0 Drain Current Maximum Safe Operation Area C D Channel Power Dissipation Maximum Channel Dissipation Curve 200 = s PW0 m 1 Pch (mW) 2SK2373 0.4 V DS = 10 V 0.3 75 C 0.2 25 C Ta = -25 C 0.1 VGS = 2.5 V 0 4 2 4 6 Drain to Source Voltage 8 10 V DS (V) 0 1 2 3 Gate to Source Voltage 4 5 V GS (V) 2SK2373 Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source On State Resistance R DS(on) ( ) Drain to Source Saturation Voltage V DS(on) (V) 0.5 0.4 0.3 0.2 0.2 A 0.1 0.1 A I D = 0.05 A 1 4 8 12 Gate to Source Voltage 16 20 5 2 VGS = 4 V 1 0.2 0.1 0.01 0.02 1 100 Ta = -25 C 25 C 75 C 0.05 0.02 0.01 0.01 0.02 0.05 0.1 0.2 0.5 Drain Current I D (A) Typical Capacitance vs. Drain to Source Voltage 0.2 0.1 10 V 0.5 Forward Transfer Admittance vs. Drain Current 0.5 Ta = 25 C Pulse Test V GS (V) Capacitance C (pF) Forward Transfer Admittance |yfs| (S) 0 Static Drain to Source on State Resistance vs. Drain Current 10 30 Ciss 10 Coss 3 Crss 1 0.3 V DS = 10 V Pulse Test VGS = 0 f = 1 MHz 0.1 0.05 0.1 0.2 Drain Current I D (A) 0.5 1 0 10 20 30 40 50 Drain to Source Voltage V DS (V) 5 2SK2373 Reverse Drain Current vs. Source to Drain Voltage Reverse Drain Current I DR (A) 0.5 Pulse Test 0.4 0.3 0.2 10 V V GS = 0 5V 0.1 0 0.4 0.8 1.2 Source to Drain Voltage 6 1.6 2.0 V SD (V) 2SK2373 When using this document, keep the following in mind: 1. 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