2SK2373
Silicon N-Channel MOS FET
November 1996
Application
Low frequency power switching
Features
• Low on-resistance
• Small package
• Low drive current
• 4 V gate drive device can be driven from 5 V source.
• Suitable for low signal load switch
Outline
MPAK
1. Source
2. Gate
3. Drain
S
D
G
21
3
2SK2373
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 30 V
Gate to source voltage VGSS ±20 V
Drain current ID0.2 A
Drain peak current ID(pulse)*10.4 A
Body to drain diode reverse drain current IDR 0.2 A
Channel dissipation Pch*2150 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes 1. PW ≤ 100 µs, duty cycle ≤ 10 %
2. Marking is “ZE–”.
2SK2373
3
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
voltage V(BR)DSS 30 — — V ID = 100 mA, VGS = 0
Gate to source breakdown
voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0
Gate to source leak current IGSS ——±2µAV
GS = ±16 V, VDS = 0
Zero gate voltage drain current IDSS ——1 µAV
DS = 30 V, VGS = 0
Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V ID = 10 µA, VDS = 5 V
Static drain to source on state
resistance RDS(on) — 1.4 2.5 ΩID = 20 mA
VGS = 4 V*1
— 1.0 1.4 ΩID = 10 mA
VGS = 10 V*1
Input capacitance Ciss — 17.8 — pF VDS = 10 V
VGS = 0
f = 1 MHz
Output capacitance Coss — 25.4 — pF
Reverse transfer capacitance Crss — 3.7 — pF
Turn-on delay time td(on) —50—nsI
D
= 0.1 A
VGS = 10 V
RL = 100 Ω
PW = 2 µs
Rise time tr— 125 — ns
Turn-off delay time td(off) — 660 — ns
Fall time tf— 400 — ns
Note 1. Pulse Test
2SK2373
4
200
150
100
50
0
Channel Power Dissipation Pch (mW)
50 100 150 200
Ambient Temperature Ta (°C)
Maximum Channel Dissipation Curve
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Maximum Safe Operation Area
1
0.1
0.01
0.001
0.3
0.03
0.003
0.1 0.3 13 10 30 100
1 ms
PW =
10 ms
DC Operation
Ta = 25 °C
1 shot pulse
Operation in
this area is
limited by RDS(on)
2.0
1.6
1.2
0.8
0.4
02
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Typical Output Characteristics
46810
5 V
4.5 V
4 V
3.5 V
3 V
V = 2.5 V
GS
Pulse Test
0.5
0.4
0.3
0.2
0.1
0Gate to Source Voltage V (V)
GS
Drain Current I (A)
D
Typical Transfer Characteristics
V = 10 V
DS
12345
Ta = –25 °C
75 °C
25 °C
2SK2373
5
0.5
0.4
0.3
0.2
0.1
0Gate to Source Voltage V (V)
GS
V (V)
DS(on)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
4 8 12 16 20
0.2 A
0.1 A
I = 0.05 A
D
Drain Current I (A)
D
Drain to Source On State Resistance
R ( )
Ω
DS(on)
Static Drain to Source on State Resistance
vs. Drain Current
Ta = 25 °C
Pulse Test
0.01 0.02 0.05 0.1 0.2 0.5 1
10 V
V = 4 V
GS
10
2
5
1
0.1
0.2
0.5
Forward Transfer Admittance |yfs| (S)
Drain Current I (A)
D
Forward Transfer Admittance vs.
Drain Current
DS
V = 10 V
Pulse Test
1
0.2
0.5
0.1
0.02
0.01
0.05
0.01 0.02 0.05 0.1 0.2 0.5 1
Ta = –25 °C
75 °C
25 °C
100
10
1
0.10
Capacitance C (pF)
Drain to Source Voltage V (V)
DS
Typical Capacitance vs.
Drain to Source Voltage
10 20 30 40 50
Ciss
Coss
Crss
V = 0
f = 1 MHz
GS
30
3
0.3
2SK2373
6
0.5
0.4
0.3
0.2
0.1
00.4 0.8 1.2 1.6 2.0
Source to Drain Voltage V (V)
SD
Reverse Drain Current I (A)
DR
Reverse Drain Current vs.
Source to Drain Voltage
10 V
5 V V = 0
GS
Pulse Test
2SK2373
7
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