1
Edition 1.1
August 2004
FHX76LP
Super Low Noise HEMT
DESCRIPTION
The FHX76LP is a low noise SuperHEMTTMproduct designed for DBS
applications. This device uses a small ceramic package that is optimized
for high volume cost driven requirements.
Eudyna’s stringent Quality Assurance Program assures the highest
reliability and consistent performance.
FEATURES
• Low Noise Figure: NF=0.40dB (Typ.)@f=12GHz
• High Associated Gain: Gas=13.5dB (Typ.)@f=12GHz
• High Reliability
• Small Size SMT Package
• Tape and Reel Packaging Available
Parameter
Drain-Source Voltage
Gate-Source Voltage
Total Power Dissipation
Storage Temperature
Channel Temperature
Symbol
V
V
mW
°C
°C
VGS
Pt
TSTG
TCH
VDS
RatingCondition Unit
3.5
-3.0
180Note
-65 to 150
150
ABSOLUTE MAXIMUM RATINGS (Ambient Temperature Ta = 25°C)
Note: Mounted on Al2O3 board (30 x 30 x 0.65mm)
Eudyna recommends the following conditions for the reliable operation of GaAs FETs:
1. The drain-source operating voltage (VDS) should not exceed 2 volts.
2. The forward and reverse gate currents should not exceed 0.2 and -0.05 mA respectively with
gate resistance of 4000Ω.
3. The operating channel temperature (Tch) should not exceed 80°C.
Item
Saturated Drain Current
Transconductance
Pinch-Off Voltage
Gate-Source Breakdown Voltage
Noise Figure
Associated Gain
Symbol
IDSS
VGSO
35 50 -
10 30 60
-0.1 -0.7 -1.5
-3.0 - -
- 0.40 0.50
12.0 13.5 -
VDS = 2V, VGS=0V
VDS = 2V, IDS=10mA
VDS = 2V, IDS=1mA
IGS = -10µA
VDS = 2V,
IDS = 10mA,
f=12GHz
mA
mS
V
dB
dB
V
gm
Vp
NF
Gas
Conditions Unit
Limits
Typ. Max.Min.
ELECTRICAL CHARACTERISTICS (Ambient Temperature Ta=25°C)
Note: RF parameters for LP devices are measured on a sample basis as follows:
Lot qty. Sample qty. Accept/Reject
1200 or less 125 (0,1)
1201 to 3200 200 (0,1)
3201 to 10000 315 (1,2)
10001 or over 500 (1,2)
CASE STYLES: LP
Channel to Case
Thermal Resistance - 300 400 °C/W
Rth
2
FHX76LP
Super Low Noise HEMT
Gas
NF & Gas vs. IDS
2.0
1.5
1.0
0.5
0
VDS=2V
f=12GHz
VDS=2V
IDS=10mA
15
9
7
11
13
10 20 30
Drain Current (mA)
Noise Figure (dB)
Associated Gain (dB)
NF & Gas vs. FREQUENCY
0.8
0.6
1.0
1.2
0.4
0.2
0.0
18
15
21
24
12
9
6
4281020
Frequency (GHz)
Noise Figure (dB)
Associated Gain (dB)
NF
Gas
NF
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
1234
Drain-Source Voltage (V)
40
30
20
0
10
Drain Current (mA)
VGS =0V
-0.2V
-0.4V
-0.6V
-0.8V
POWER DERATING CURVE
100
150
50
200
0
050 100 150 200
Ambient Temperature (°C)
Total Power Dissipation (mW)
3
FHX76LP
Super Low Noise HEMT
Γopt
+j250
+j100
+j50
+j25
+j10
0
-j10
-j25
-j50
-j100
-j250
502510 100 250
TYPICAL NOISE FIGURE CIRCLE
f=12GHz
VDS=2V
IDS=10mA
Γopt=0.32∠153.8°
Rn/50=0.06
NFmin=0.40dB
Freq.
(GHz) (MAG) (ANG)
NFmin
(dB) Rn/50
Γopt
2
4
6
8
10
12
14
16
18
20
0.79
0.62
0.50
0.41
0.35
0.32
0.30
0.29
0.29
0.29
12.5
30.0
54.1
83.6
117.3
153.8
-168.0
-129.5
-91.8
-56.3
0.28
0.29
0.30
0.32
0.35
0.40
0.48
0.60
0.72
0.91
.24
.20
.16
.12
.08
.06
.06
.09
.14
.19
NOISE PARAMETERS
VDS=2V, IDS=10MA
Ga(max) AND |S21| vs. FREQUENCY
25
20
15
10
5
04681012 20
Frequency (GHz)
Gain (dB)
VDS=2V
IDS=10mA
|S21|2
Ga(max)
1.0 1.5 2.0 3.0dB
0.5
4
S-PARAMETERS
VDS = 2V, IDS = 10mA
FREQUENCY S11 S21 S12 S22
(MHZ) MAG ANG MAG ANG MAG ANG MAG ANG
1000 .987 -14.8 5.535 164.2 .014 80.2 .585 -11.4
2000 .965 -29.4 5.463 148.8 .027 70.2 .567 -22.9
3000 .925 -44.6 5.334 133.2 .041 57.7 .538 -34.7
4000 .878 -58.3 5.154 118.8 .049 50.0 .511 -45.2
5000 .828 -72.9 5.019 104.3 .059 40.6 .480 -56.4
6000 .776 -87.8 4.825 89.8 .067 32.4 .446 -68.4
7000 .719 -102.8 4.606 75.6 .075 23.2 .413 -80.6
8000 .669 -116.6 4.354 61.9 .079 15.2 .394 -92.6
9000 .631 -129.4 4.130 49.5 .083 6.3 .374 -102.4
10000 .590 -141.7 3.982 37.0 .086 .2 .365 -112.5
11000 .548 -155.3 3.849 24.7 .088 -7.6 .335 -121.9
12000 .507 -169.6 3.689 12.4 .091 -14.2 .323 -134.1
13000 .482 177.0 3.545 -.2 .095 -20.8 .313 -145.0
14000 .459 164.7 3.425 -11.9 .096 -28.7 .315 -155.9
15000 .439 152.3 3.330 -24.4 .098 -36.4 .324 -165.4
16000 .419 138.7 3.264 -37.1 .102 -44.1 .322 -174.3
17000 .404 123.9 3.238 -50.3 .103 -54.6 .321 175.4
18000 .383 107.3 3.176 -63.5 .108 -63.4 .316 165.3
19000 .377 93.2 3.101 -78.0 .105 -74.5 .320 153.2
20000 .348 76.5 3.028 -92.3 .110 -87.6 .301 146.1
NOTE:* The data includes bonding wires.
n: number of wires Gate n=1 (0.1mm length, 25µm Dia Au wire)
Drain n=1 (0.1mm length, 25µm Dia Au wire)
Source n=4 (0.2mm length, 25µm Dia Au wire)
DRAIN CURRENT vs. DRAIN-SOURCE VOLTAGE
1234
Drain-Source Voltage (V)
40
30
20
0
10
Drain Current (mA)
VGS =0V
-0.2V
-0.4V
-0.6V
-0.8V
POWER DERATING CURVE
100
150
50
200
0
050 100 150 200
Ambient Temperature (°C)
Total Power Dissipation (mW)
FHX76LP
Super Low Noise HEMT
5
1.78+0.15
(0.07)
(0.039)
(0.07)
1.78±0.15
1.3 Max
(0.051)
0.1
(0.004)
1.5 ±0.5
(0.059)
1.5 ±0.5
(0.059)
1
2
3
0.5
(0.02)
1.0 Min
1: Gate
2: Source (Flange)
3: Drain
4: Source (Flange)
Unit: mm (Inches)
Case Style "LP"
Metal-Ceramic Package
1.78±0.15
(0.07)
1.5 ±0.5
(0.059)
1.5 ±0.5
(0.059)
4.78±0.5
(0.188)
1.78+0.15
(0.07)
4.78±0.5
(0.188)
4
FHX76LP
Super Low Noise HEMT
Eudyna Devices Inc. products contain gallium arsenide
(GaAs) which can be hazardous to the human body and the environment.
For safety, observe the following procedures:
CAUTION
• Do not put this product into the mouth.
• Do not alter the form of this product into a gas, powder, or liquid
through burning, crushing, or chemical processing as these by-products
are dangerous to the human body if inhaled, ingested, or swallowed.
• Observe government laws and company regulations when discarding this
product. This product must be discarded in accordance with methods
specified by applicable hazardous waste procedures.
For further information please contact:
Eudyna Devices USA Inc.
2355 Zanker Rd.
San Jose, CA 95131-1138, U.S.A.
TEL: (408) 232-9500
FAX: (408) 428-9111
www.us.eudyna.com
Eudyna Devices Europe Ltd.
Network House
Norreys Drive
Maidenhead, Berkshire SL6 4FJ
United Kingdom
TEL: +44 (0) 1628 504800
FAX: +44 (0) 1628 504888
Eudyna Devices Asia Pte Ltd.
Hong Kong Branch
Rm. 1101, Ocean Centre, 5 Canton Rd.
Tsim Sha Tsui, Kowloon, Hong Kong
TEL: +852-2377-0227
FAX: +852-2377-3921
Eudyna Devices Inc.
Sales Division
1, Kanai-cho, Sakae-ku
Yokohama, 244-0845, Japan
TEL: +81-45-853-8156
FAX: +81-45-853-8170
Eudyna Devices Inc. reserves the right to change products and specifications
without notice. The information does not convey any license under rights of
Eudyna Devices Inc. or others.
© 2004 Eudyna Devices USA Inc.
Printed in U.S.A.
