1
Data sheet acquired from Harris Semiconductor
SCHS195C
Features
Simultaneous and Independent Read and Write
Operations
Expandable to 512 Words of n-Bits
Three-State Outputs
Organized as 4 Words x 4 Bits Wide
Buffered Inputs
Typical Read Time = 16ns for ’HC670 VCC = 5V, CL =
15pF, TA = 25oC
Fanout (Over Temperature Range)
- Standard Outputs. . . . . . . . . . . . . . . 10 LSTTL Loads
- Bus Driver Outputs . . . . . . . . . . . . . 15 LSTTL Loads
Wide Operating T emperature Range . . . -55oC to 125oC
Balanced Propagation Delay and Transition Times
Significant Power Reduction Compared to LSTTL
Logic ICs
HC Types
- 2V to 6V Operation
- High Noise Immunity: NIL = 30%, NIH = 30% of VCC
at VCC = 5V
HCT Types
- 4.5V to 5.5V Operation
- Direct LSTTL Input Logic Compatibility,
VIL= 0.8V (Max), VIH = 2V (Min)
- CMOS Input Compatibility, Il1µA at VOL, VOH
Description
The ’HC670 and CD74HCT670 are 16-bit register files
organized as 4 words x 4 bits each. Read and write address
and enable inputs allow simultaneous writing into one location
while reading another. Four data inputs are provided to store
the 4-bit word. The write address inputs (WA0 and WA1)
determine the location of the stored word in the register.
When write enable (WE) is low the word is entered into the
address location and it remains transparent to the data. The
outputs will reflect the true form of the input data. When (WE)
is high data and address inputs are inhibited. Data acquisition
from the four registers is made possible by the read address
inputs (RA1 and RA0). The addressed word appears at the
output when the read enable (RE) is low. The output is in the
high impedance state when the (RE) is high. Outputs can be
tied together to increase the word capacity to 512 x 4 bits.
Pinout CD54HC670
(CERDIP)
CD74HC670, CD74HCT670
(PDIP, SOIC)
TOP VIEW
Ordering Information
PART NUMBER TEMP. RANGE
(oC) PACKAGE
CD54HC670F3A -55 to 125 16 Ld CERDIP
CD74HC670E -55 to 125 16 Ld PDIP
CD74HC670M -55 to 125 16 Ld SOIC
CD74HC670MT -55 to 125 16 Ld SOIC
CD74HC670M96 -55 to 125 16 Ld SOIC
CD74HCT670E -55 to 125 16 Ld PDIP
CD74HCT670M -55 to 125 16 Ld SOIC
CD74HCT670MT -55 to 125 16 Ld SOIC
CD74HCT670M96 -55 to 125 16 Ld SOIC
NOTE: When ordering, use the entire part number. The suffix 96
denotes tape and reel. The suffix T denotes a small-quantity reel of
250.
14
15
16
9
13
12
11
10
1
2
3
4
5
7
6
8
D1
D2
D3
RA1
RA0
Q3
GND
Q2
VCC
WA0
WA1
WE
RE
Q0
Q1
D0
January 1998 - Revised October 2003
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper IC Handling Procedures.
Copyright © 2003, Texas Instruments Incorporated
CD54HC670, CD74HC670,
CD74HCT670
High-Speed CMOS Logic
4x4 Register File
[
/Title
(
CD74H
C
670,
C
D74H
C
T670)
/
Subject
(
High-
S
peed
C
MOS
L
ogic
4
x4 Reg-
i
ster
2
Functional Diagram
9
6
7
10 Q0
Q1
Q2
Q3
4
11
15
1
3
D0
D2
WE
RE
514 13
RA1
RA0
WA0
WA1
12
2
D1
D3
WRITE MODE SELECT TABLE
OPERATING
MODE
INPUTS INTERNAL
LATCHES
(NOTE 1)WE DN
Write Data L L L
LHH
Data Latched H X No Change
NOTE:
1. TheWriteAddress(WA0andWA1)tothe“internallatches”must
be stable while WE is LOW for conventional operation.
READ MODE SELECT TABLE
OPERATING
MODE
INPUTS
OUTPUT
QN
RE
INTERNAL
LATCHES
(NOTE 2)
Read L L L
LHH
Disabled H X (Z)
NOTE:
2. Theselectionofthe“internallatches”by ReadAddress(RA0and
RA1) are not constrained by WE or RE operation.
H = High Voltage Level
L = Low Voltage Level
X= Don’t Care
Z = High Impedance “Off” State
CD54HC670, CD74HC670, CD74HCT670CD54HC670, CD74HC670, CD74HCT670
3
Absolute Maximum Ratings Thermal Information
DC Supply Voltage, VCC . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to 7V
DC Input Diode Current, IIK
For VI < -0.5V or VI > VCC + 0.5V. . . . . . . . . . . . . . . . . . . . . .±20mA
DC Output Diode Current, IOK
For VO < -0.5V or VO > VCC + 0.5V . . . . . . . . . . . . . . . . . . . .±20mA
DC Drain Current, per Output, IO
For -0.5V < VO < VCC + 0.5V. . . . . . . . . . . . . . . . . . . . . . . . . .±35mA
DC Output Source or Sink Current per Output Pin, IO
For VO > -0.5V or VO < VCC + 0.5V . . . . . . . . . . . . . . . . . . . .±25mA
DC VCC or Ground Current, ICC . . . . . . . . . . . . . . . . . . . . . . . . .±50mA
Operating Conditions
Temperature Range, TA . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC
Supply Voltage Range, VCC
HC Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2V to 6V
HCT Types . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4.5V to 5.5V
DC Input or Output Voltage, VI, VO . . . . . . . . . . . . . . . . . 0V to VCC
Input Rise and Fall Time
2V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1000ns (Max)
4.5V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500ns (Max)
6V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400ns (Max)
Thermal Resistance (Typical, Note 3) θJA (oC/W)
E (PDIP) Package . . . . . . . . . . . . . . . . . . . . . . . . . . 67
M (SOIC) Package. . . . . . . . . . . . . . . . . . . . . . . . . . 73
Maximum Junction Temperature. . . . . . . . . . . . . . . . . . . . . . . 150oC
Maximum Storage Temperature Range . . . . . . . . . .-65oC to 150oC
Maximum Lead Temperature (Soldering 10s). . . . . . . . . . . . . 300oC
(SOIC - Lead Tips Only)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
3. The package thermal impedance is calculated in accordance with JESD 51-7.
DC Electrical Specifications
PARAMETER SYMBOL
TEST
CONDITIONS VCC
(V)
25oC -40oC TO 85oC -55oC TO 125oC
UNITSVI(V) IO(mA) MIN TYP MAX MIN MAX MIN MAX
HC TYPES
High Level Input
Voltage VIH - - 2 1.5 - - 1.5 - 1.5 - V
4.5 3.15 - - 3.15 - 3.15 - V
6 4.2 - - 4.2 - 4.2 - V
Low Level Input
Voltage VIL - - 2 - - 0.5 - 0.5 - 0.5 V
4.5 - - 1.35 - 1.35 - 1.35 V
6 - - 1.8 - 1.8 - 1.8 V
High Level Output
Voltage
CMOS Loads
VOH VIH or VIL -0.02 2 1.9 - - 1.9 - 1.9 - V
-0.02 4.5 4.4 - - 4.4 - 4.4 - V
-0.02 6 5.9 - - 5.9 - 5.9 - V
High Level Output
Voltage
TTL Loads
- - ---- - - -V
-6 4.5 3.98 - - 3.84 - 3.7 - V
-7.8 6 5.48 - - 5.34 - 5.2 - V
Low Level Output
Voltage
CMOS Loads
VOL VIH or VIL 0.02 2 - - 0.1 - 0.1 - 0.1 V
0.02 4.5 - - 0.1 - 0.1 - 0.1 V
0.02 6 - - 0.1 - 0.1 - 0.1 V
Low Level Output
Voltage
TTL Loads
- - ---- - - -V
6 4.5 - - 0.26 - 0.33 - 0.4 V
7.8 6 - - 0.26 - 0.33 - 0.4 V
Input Leakage
Current IIVCC or
GND -6--±0.1 - ±1-±1µA
CD54HC670, CD74HC670, CD74HCT670CD54HC670, CD74HC670, CD74HCT670
4
Quiescent Device
Current ICC VCC or
GND 0 6 - - 8 - 80 - 160 µA
Three-State Leakage
Current VIL or VIH VO =
VCC or
GND
6--±0.5 - ±5.0 - ±10 µA
HCT TYPES
High Level Input
Voltage VIH - - 4.5 to
5.5 2--2 - 2 - V
Low Level Input
Voltage VIL - - 4.5 to
5.5 - - 0.8 - 0.8 - 0.8 V
High Level Output
Voltage
CMOS Loads
VOH VIH or VIL -0.02 4.5 4.4 - - 4.4 - 4.4 - V
High Level Output
Voltage
TTL Loads
-6 4.5 3.98 - - 3.84 - 3.7 - V
Low Level Output
Voltage
CMOS Loads
VOL VIH or VIL 0.02 4.5 - - 0.1 - 0.1 - 0.1 V
Low Level Output
Voltage
TTL Loads
6 4.5 - - 0.26 - 0.33 - 0.4 V
Input Leakage
Current IIVCC and
GND 0 5.5 - ±0.1 - ±1-±1µA
Quiescent Device
Current ICC VCC or
GND 0 5.5 - - 8 - 80 - 160 µA
Three-State Leakage
Current VIL or VIH VO =
VCC or
GND
5.5 - - ±0.5 - ±5.0 - ±10 µA
Additional Quiescent
Device Current Per
Input Pin: 1 Unit Load
ICC
(Note 4) VCC
-2.1 - 4.5 to
5.5 - 100 360 - 450 - 490 µA
NOTE:
4. For dual-supply systems theoretical worst case (VI = 2.4V, VCC = 5.5V) specification is 1.8mA.
DC Electrical Specifications (Continued)
PARAMETER SYMBOL
TEST
CONDITIONS VCC
(V)
25oC -40oC TO 85oC -55oC TO 125oC
UNITSVI(V) IO(mA) MIN TYP MAX MIN MAX MIN MAX
HCT Input Loading Table
INPUT UNIT LOADS
WE 0.3
WA0 0.2
WA1 0.4
RE 1.5
DATA 0.15
RA0 0.4
RA1 0.7
NOTE: UnitLoadisICC limitspecific in DC ElectricalSpecifications
Table, e.g., 360µA max. at 25oC.
CD54HC670, CD74HC670, CD74HCT670CD54HC670, CD74HC670, CD74HCT670
5
Prerequisite for Switching Specifications
PARAMETER SYMBOL VCC (V)
25oC -40oC TO 85oC -55oC TO 125oC
UNITSMIN TYP MAX MIN TYP MAX MIN TYP MAX
HC TYPES
Setup Time
Data to WE
Write to WE
tSU, th260--75- -90--ns
4.5 12 - - 15 - - 18 - - ns
610--13- -15--ns
Hold Time
Data to WE
Write to WE
tH, tW25--5--5--ns
4.5 5 - - 5 - - 5 - - ns
65--5--5--ns
Pulse Width WE tW2 80 - - 100 - - 120 - - ns
4.5 16 - - 20 - - 24 - - ns
614--17- -20--ns
Latch Time WE to RA0,
RA1 tLATCH 2 100 - - 125 - - 150 - - ns
4.5 20 - - 25 - - 30 - - ns
617--21- -26--ns
HCT TYPES
Setup Time
Data to WE tSU, th4.5 12 - - 15 - - 18 - - ns
Hold Time
Data to WE
Write to WE
tH, tW4.5 5 - - 5 - - 5 - - ns
Setup Time
Write to WE tSU 4.5 18 - - 23 - - 27 - - ns
Pulse Width WE tW4.5 20 - - 25 - - 30 - - ns
Latch Time WE to RA0,
RA1 tLATCH 4.5 25 - - 31 - - 38 - - ns
Switching Specifications CL = 50pF, Input tr, tf= 6ns
PARAMETER SYMBOL TEST
CONDITIONS VCC (V)
25oC-40oC TO
85oC-55oC TO
125oC
UNITSMIN TYP MAX MIN MAX MIN MAX
HC TYPES
Propagation Delay tPLH, tPHL CL = 50pF
Reading Any Word 2 - - 195 - 245 - 295 ns
4.5 - - 39 - 49 - 59 ns
CL = 15pF 5 - 16 - - - - - ns
CL = 50pF 6 - - 33 - 42 - 50 ns
Write Enable to Output tPLH,t
PHL CL = 50pF 2 - - 250 - 315 - 375 ns
4.5 - - 50 - 63 - 75 ns
CL = 15pF 5 - 21 - - - - - ns
CL = 50pF 6 - - 43 - 54 - 64 ns
CD54HC670, CD74HC670, CD74HCT670CD54HC670, CD74HC670, CD74HCT670
6
Data to Output tPLH,t
PHL CL = 50pF 2 - - 256 - 315 - 375 ns
4.5 - - 50 - 63 - 75 ns
CL = 15pF 5 - 21 - - - - - ns
CL = 50pF 6 - - 43 - 54 - 64 ns
Output Disable Time tPLZ,t
PHZ CL = 50pF 2 - - 150 - 190 - 225 ns
4.5 - - 30 - 38 - 45 ns
CL = 15pF 5 - 12 - - - - - ns
CL = 50pF 6 - - 26 - 33 - 38 ns
Output Enable Time tPZL,t
PZH CL = 50pF 2 - - 150 - 190 - 225 ns
4.5 - - 30 - 38 - 45 ns
CL = 15pF 5 - 12 - - - - - ns
CL = 50pF 6 - - 26 - 33 - 38 ns
Output Transition Time tTHL, tTLH CL = 50pF 2 - - 75 - 95 - 110 ns
4.5 - - 15 - 19 - 22 ns
6 - - 13 - 10 - 19 ns
Input Capacitance CICL = 50pF - 10 - 10 - 10 - 10 pF
Three-State Output
Capacitance CO- - 20 - 20 - 20 - 20 pF
Power Dissipation Capacitance
(Notes 5, 6) CPD CL = 15pF 5 - 59 - - - - - pF
HCT TYPES
Propagation Delay tPHL, tPLH
Reading Any Word CL = 50pF 4.5 - - 40 - 50 - 53 ns
CL = 15pF 5 - 17 - - - - - ns
Write Enable to Output tPHL, tPLH CL = 50pF 4.5 - - 50 - 63 - 75 ns
CL = 15pF 5 - 21 - - - - - ns
Data to Output tPHL, tPLH CL = 50pF 4.5 - - 50 - 63 - 75 ns
CL = 15pF 5 - 21 - - - - - ns
Output Disable Time tPLZ,t
PHZ CL = 50pF 4.5 - - 35 - 44 - 53 ns
CL = 15pF 5 - 14 - - - - - ns
Output Enable Time tPZL,t
PZH CL = 50pF 4.5 - - 38 - 48 - 57 ns
CL = 15pF 5 - 16 - - - - - ns
Output Transition Time tTLH, tTHL CL = 50pF 4.5 - - 15 - 19 - 22 ns
Input Capacitance CICL = 50pF - 10 - 10 - 10 - 10 pF
Three-State Output
Capacitance CO- - 20 - 20 - 20 - 20 pF
Power Dissipation Capacitance
(Notes 5, 6) CPD CL = 15pF 5 - 66 - - - - - pF
NOTES:
5. CPD is used to determine the dynamic power consumption, per output.
6. PD=C
PD VCC2fi+CLVCC2fOwhere fi= Input Frequency, fO= Output Frequency, CL= Output Load Capacitance, VCC = Supply
Voltage.
Switching Specifications CL = 50pF, Input tr, tf= 6ns (Continued)
PARAMETER SYMBOL TEST
CONDITIONS VCC (V)
25oC-40oC TO
85oC-55oC TO
125oC
UNITSMIN TYP MAX MIN MAX MIN MAX
CD54HC670, CD74HC670, CD74HCT670
7
Test Circuits and Waveforms
NOTE: Outputs should be switching from 10% VCC to 90% VCC in
accordance with device truth table. For fMAX, input duty cycle = 50%.
FIGURE 1. HC CLOCK PULSE RISE AND FALL TIMES AND
PULSE WIDTH
NOTE: Outputs should be switching from 10% VCC to 90% VCC in
accordance with device truth table. For fMAX, input duty cycle = 50%.
FIGURE 2. HCT CLOCK PULSE RISE AND FALL TIMES AND
PULSE WIDTH
FIGURE 3. HC TRANSITION TIMES AND PROPAGATION
DELAY TIMES, COMBINATION LOGIC FIGURE 4. HCT TRANSITION TIMES AND PROPAGATION
DELAY TIMES, COMBINATION LOGIC
FIGURE 5. HC SETUP TIMES, HOLD TIMES, REMOVAL TIME,
AND PROPAGATION DELAY TIMES FOR EDGE
TRIGGERED SEQUENTIAL LOGIC CIRCUITS
FIGURE 6. HCT SETUP TIMES, HOLD TIMES, REMOVAL TIME,
AND PROPAGATION DELAY TIMES FOR EDGE
TRIGGERED SEQUENTIAL LOGIC CIRCUITS
CLOCK 90% 50%
10% GND
VCC
trCLtfCL
50% 50%
tWL tWH
10%
tWL + tWH =fCL
I
CLOCK 2.7V 1.3V
0.3V GND
3V
trCL= 6ns tfCL= 6ns
1.3V 1.3V
tWL tWH
0.3V
tWL + tWH =fCL
I
tPHL tPLH
tTHL tTLH
90%
50%
10%
50%
10%
INVERTING
OUTPUT
INPUT
GND
VCC
tr = 6ns tf = 6ns
90%
tPHL tPLH
tTHL tTLH
2.7V
1.3V
0.3V
1.3V
10%
INVERTING
OUTPUT
INPUT
GND
3V
tr = 6ns tf = 6ns
90%
trCLtfCL
GND
VCC
GND
VCC
50%
90%
10%
GND
CLOCK
INPUT
DATA
INPUT
OUTPUT
SET, RESET
OR PRESET
VCC 50%
50%
90%
10%
50%
90%
tREM
tPLH
tSU(H)
tTLH tTHL
tH(L)
tPHL
IC CL
50pF
tSU(L)
tH(H)
trCLtfCL
GND
3V
GND
3V
1.3V
2.7V
0.3V
GND
CLOCK
INPUT
DATA
INPUT
OUTPUT
SET, RESET
OR PRESET
3V 1.3V
1.3V
1.3V
90%
10%
1.3V
90%
tREM
tPLH
tSU(H)
tTLH tTHL
tH(L)
tPHL
IC CL
50pF
tSU(L)
1.3V
tH(H)
1.3V
CD54HC670, CD74HC670, CD74HCT670CD54HC670, CD74HC670, CD74HCT670
8
FIGURE 7. HC THREE-STATE PROPAGATION DELAY
WAVEFORM FIGURE 8. HCT THREE-STATE PROPAGATION DELAY
WAVEFORM
NOTE: Open drain waveforms tPLZ and tPZL are the same as those for three-state shown on the left. The test circuit is Output RL=1kto
VCC, CL = 50pF. FIGURE 9. HC AND HCT THREE-STATE PROPAGATION DELAY TEST CIRCUIT
Test Circuits and Waveforms (Continued)
50% 10%
90%
GN
D
VCC
10%
90% 50%
50%
OUTPUT
DISABLE
OUTPUT LOW
TO OFF
O
UTPUT HIGH
TO OFF
OUTPUTS
ENABLED OUTPUTS
DISABLED OUTPUTS
ENABLED
6ns 6ns
tPZH
tPHZ
tPZL
tPLZ
0.3
2.7
GN
D
3V
10%
90%
1.3V
1.3V
OUTPUT
DISABLE
OUTPUT LOW
TO OFF
O
UTPUT HIGH
TO OFF
OUTPUTS
ENABLED OUTPUTS
DISABLED OUTPUTS
ENABLED
tr6ns
tPZH
tPHZ
tPZL
tPLZ
6ns tf
1.3
IC WITH
THREE-
STATE
OUTPUT
OTHER
INPUTS
T
IED HIGH
OR LOW
OUTPUT
DISABLE
VCC FOR tPLZ AND tPZL
GND FOR tPHZ AND tPZ
H
OUTPUT
RL = 1k
CL
50pF
CD54HC670, CD74HC670, CD74HCT670CD54HC670, CD74HC670, CD74HCT670
PACKAGING INFORMATION
Orderable Device Status (1) Package
Type Package
Drawing Pins Package
Qty Eco Plan (2) Lead/Ball Finish MSL Peak Temp (3)
CD74HC670E ACTIVE PDIP N 16 25 Pb-Free
(RoHS) CU NIPDAU N / A for Pkg Type
CD74HC670EE4 ACTIVE PDIP N 16 25 Pb-Free
(RoHS) CU NIPDAU N / A for Pkg Type
CD74HC670M ACTIVE SOIC D 16 40 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
CD74HC670M96 ACTIVE SOIC D 16 2500 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
CD74HC670M96E4 ACTIVE SOIC D 16 2500 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
CD74HC670M96G4 ACTIVE SOIC D 16 2500 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
CD74HC670ME4 ACTIVE SOIC D 16 40 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
CD74HC670MG4 ACTIVE SOIC D 16 40 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
CD74HC670MT ACTIVE SOIC D 16 250 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
CD74HC670MTE4 ACTIVE SOIC D 16 250 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
CD74HC670MTG4 ACTIVE SOIC D 16 250 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
CD74HCT670E ACTIVE PDIP N 16 25 Pb-Free
(RoHS) CU NIPDAU N / A for Pkg Type
CD74HCT670EE4 ACTIVE PDIP N 16 25 Pb-Free
(RoHS) CU NIPDAU N / A for Pkg Type
CD74HCT670M ACTIVE SOIC D 16 40 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
CD74HCT670ME4 ACTIVE SOIC D 16 40 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
CD74HCT670MG4 ACTIVE SOIC D 16 40 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
CD74HCT670MT ACTIVE SOIC D 16 250 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
CD74HCT670MTE4 ACTIVE SOIC D 16 250 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
CD74HCT670MTG4 ACTIVE SOIC D 16 250 Green (RoHS &
no Sb/Br) CU NIPDAU Level-1-260C-UNLIM
(1) The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in
a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check
http://www.ti.com/productcontent for the latest availability information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements
for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered
PACKAGE OPTION ADDENDUM
www.ti.com 11-Nov-2009
Addendum-Page 1
at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and
package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS
compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame
retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material)
(3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder
temperature.
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is
provided. TI bases its knowledge and belief on information provided by third parties, and makes no representation or warranty as to the
accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and continues to take
reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on
incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited
information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI
to Customer on an annual basis.
PACKAGE OPTION ADDENDUM
www.ti.com 11-Nov-2009
Addendum-Page 2
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device Package
Type Package
Drawing Pins SPQ Reel
Diameter
(mm)
Reel
Width
W1 (mm)
A0
(mm) B0
(mm) K0
(mm) P1
(mm) W
(mm) Pin1
Quadrant
CD74HC670M96 SOIC D 16 2500 330.0 16.4 6.5 10.3 2.1 8.0 16.0 Q1
PACKAGE MATERIALS INFORMATION
www.ti.com 29-Jul-2009
Pack Materials-Page 1
*All dimensions are nominal
Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm)
CD74HC670M96 SOIC D 16 2500 333.2 345.9 28.6
PACKAGE MATERIALS INFORMATION
www.ti.com 29-Jul-2009
Pack Materials-Page 2
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