Apr. 2010 Consumer Memory Product Guide SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed herein is provided on an "AS IS" basis, without warranties of any kind. This document and all information discussed herein remain the sole and exclusive property of Samsung Electronics. No license of any patent, copyright, mask work, trademark or any other intellectual property right is granted by one party to the other party under this document, by implication, estoppel or otherwise. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar applications where product failure could result in loss of life or personal or physical harm, or any military or defense application, or any governmental procurement to which special terms or provisions may apply. For updates or additional information about Samsung products, contact your nearest Samsung office. All brand names, trademarks and registered trademarks belong to their respective owners. 2010 Samsung Electronics Co., Ltd. All rights reserved. -1- Apr. 2010 Product Guide Consumer Memory 1. CONSUMER MEMORY ORDERING INFORMATION 1 2 3 4 5 6 7 8 9 10 11 K 4 X X X X X X X X - X X X X Speed SAMSUNG Memory Temperature & Power DRAM Package Type Product Revision Density & Refresh Interface (VDD, VDDQ) Organization 1. SAMSUNG Memory : K Bank 7. Interface ( VDD, VDDQ) 2. DRAM : 4 3. Product S H T B D J : SDRAM : DDR SDRAM : DDR2 SDRAM : DDR3 SDRAM : GDDR : GDDR3 64 : 64Mb, 4K/64ms 28 : 128Mb, 4K/64ms 56 : 256Mb, 8K/64ms 51 : 512Mb, 8K/64ms 2G : 2Gb, 8K/64ms : LVTTL (3.3V, 3.3V) 8 : SSTL_2 (2.5V, 2.5V) Q : SSTL_18 (1.8V, 1.8V) 6 : SSTL_15 (1.5V, 1.5V) K : POD_18 (1.8V, 1.8V) 8. Revision 4. Density & Refresh 1G : 1Gb, 8K/64ms 2 M : 1st Gen. H : 9th Gen. A B : 2nd Gen. I : 10th Gen. : 3rd Gen. J : 11th Gen. C : 4th Gen. K : 12th Gen. D : 5th Gen. L : 13th Gen. E : 6th Gen. N : 14th Gen. F : 7th Gen. O : 15th Gen. G : 8th Gen. S : 19th Gen. 9. Package Type 10 : 1Gb, 8K/32ms TSOPII (Lead-free) 100TQFP(Lead-free) only for 128Mb GDDR U : Z : FBGA (Lead-free) 5. Organization V : 144FBGA (Lead-free) only for 128Mb GDDR 04 : x4 L : TSOPII (Lead-free & Halogen-free) H : FBGA (Lead-free & Halogen-free) F : FBGA(Lead-free & Halogen-free) for 64Mb DDR, 128Mb GDDR M : FBGA DDP (Lead-free & Halogen-free) B : FBGA FLIP-CHIP (Lead-free & Halogen-free) 08 : x8 16 : x16 32 : x32 31 : x32 (2CS) 10. Temperature & Power C : Commercial Temp. & Normal Power : 2 Banks L : Commercial Temp. & Low Power 3 : 4 Banks I : Industrial Temp. & Normal Power 4 : 8 Banks 6. Bank 2 -2- P : Industrial Temp. & Low Power D : Industrial Temp. & Super Low Power Q : Commercial Temp. DDR3+ (Gapless, BL4) Apr. 2010 Product Guide 1 2 3 Consumer Memory 4 5 6 7 8 9 10 11 K 4 X X X X X X X X - X X X X Speed SAMSUNG Memory Temperature & Power DRAM Package Type Product Revision Density & Refresh Interface (VDD, VDDQ) Organization Bank 11. Speed 75 : 7.5ns, PC133 (133MHz CL=3) 60 : 6.0ns (166MHz CL=3) 50 : 5.0ns (200MHz CL=3) 40 : 4.0ns (250MHz CL=3) B0 : DDR266 (133MHz @ CL=2.5, tRCD=3, tRP=3) B3 : DDR333 (166MHz @ CL=2.5, tRCD=3, tRP=3) CC : DDR400 (200MHz @ CL=3, tRCD=3, tRP=3) E6 : DDR2-667 (333MHz @ CL=5, tRCD=5, tRP=5) E7 : DDR2-800 (400MHz @ CL=5, tRCD=5, tRP=5) F7 : DDR2/3-800 (400MHz @ CL=6, tRCD=6, tRP=6) F8 : DDR2/3-1066 (533MHz @ CL=7, tRCD=7, tRP=7) H9 : DDR3-1333 (667MHz @ CL=9, tRCD=9, tRP=9) K0 : DDR3-1600 (800MHz @ CL=11, tRCD=11, tRP=11) 7A : GDDR3-2.6Gbps (0.77ns) 08 : GDDR3-2.4Gbps (0.8ns) 1A : GDDR3-2.0Gbps (1.0ns) 12 : GDDR3-1.6Gbps (1.25ns) 14 : GDDR3-1.4Gbps (1.4ns) -3- Apr. 2010 Product Guide Consumer Memory 2. Commercial Temperature Consumer DRAM Component Product Guide 2.1 SDRAM Density Bank 64Mb N-die 4Banks 128Mb K-die 4Banks 128Mb O-die 4Banks 256Mb J-die 256Mb N-die Part Number 4Banks 4Banks Package & Power, Temp. (-C/-L) & Speed Org. K4S640832N LC(L)75 8M x 8 K4S641632N LC(L)50/C(L)60/C(L)75 4M x 16 K4S280832K U*1C(L)75 16M x 8 K4S281632K UC(L)50/C(L)60/C(L)75 8M x 16 K4S280832O LC(L)75 16M x 8 K4S281632O LC(L)50/C(L)60/C(L)75 8M x 16 K4S560432J U*1C(L)75 64M x 4 K4S560832J UC(L)75 32M x 8 K4S561632J UC(L)60/C(L)75 16M x 16 K4S560432N LC(L)75 64M x 4 K4S560832N LC(L)75 32M x 8 K4S561632N LC(L)60/C(L)75 16M x 16 Interface Refresh Power (V) Package Avail. LVTTL 4K/64ms 3.30.3V 54pin TSOP(II) Now LVTTL 4K/64ms 3.30.3V 54pin TSOP(II)*1 Now LVTTL 4K/64ms 3.30.3V 54pin TSOP(II) 3Q'10 LVTTL 8K/64ms 3.30.3V 54pin TSOP(II)*1 Now LVTTL 8K/64ms 3.30.3V 54pin TSOP(II) Now Package Avail. NOTE : 1. 128Mb K-die SDR and 256Mb J-die SDR DRAMs support Lead-free & Halogen-free package with Lead-free package code(-U) 2.2 DDR SDRAM Density Bank Part Number 64Mb N-die 4Banks K4H641638N Package & Power, Temp. (-C/-L) & Speed LC(L)CC FC(L)CC Org. Interface Refresh Power (V) 4M x 16 SSTL_2 4K/64m 2.50.2V 66pinTSOPII 60ball FBGA Now 64Mb Q-die 4Banks K4H641638Q LC(L)CC 4M x 16 SSTL_2 4K/64m 2.50.2V 66pinTSOPII 2Q'10 128Mb L-die 4Banks K4H281638L LC(L)/C(L)CC 8M x 16 SSTL_2 4K/64m 2.50.2V*1 66pinTSOPII Now 128Mb O-die 4Banks K4H281638O LC(L)CC/C(L)B3 8M x 16 SSTL_2 4K/64m 2.50.2V*1 66pinTSOPII 2Q'10 K4H560438J LC(L)B3/C(L)B0 64M x 4 256Mb J-die 4Banks K4H560838J LC(L)CC/C(L)B3 32M x 8 SSTL_2 8K/64m 2.50.2V*2 66pinTSOPII Now K4H561638J LC(L)CC/C(L)B3 16M x 16 K4H560438N LC(L)B3/C(L)B0 64M x 4 K4H560838N LC(L)CC/C(L)B3 32M x 8 SSTL_2 8K/64m 2.50.2V*2 66pinTSOPII Now LC(L)CC/C(L)B3 16M x 16 256Mb N-die 4Banks K4H561638N K4H510438F 512Mb F-die 4Banks K4H510838F K4H511638F K4H510438G 512Mb G-die 4Banks K4H510838G K4H511638G LC(L)B3/C(L)B0 HC(L)CC/C(L)B3 LC(L)CC/C(L)B3 HC(L)CC/C(L)B3 LC(L)CC/C(L)B3 HC(L)CC/C(L)B3 LC(L)B3/C(L)B0 HC(L)CC/C(L)B3 LC(L)CC/C(L)B3 HC(L)CC/C(L)B3 LC(L)CC/C(L)B3 HC(L)CC/C(L)B3 64M x 8 DDR500 DDR400 2.5V 0.125V 2.5V 0.2V DDR400 DDR333/266 2.6V 0.1V 2.5V 0.2V SSTL_2 8K/64m 2.50.2V*2 64M x 8 32M x 16 -4- 66pinTSOPII 60ball FBGA Now 66pinTSOPII 60ball FBGA 66pinTSOPII 128M x 4 2. VDD/VDDQ SPEC for 256/512Mb DDR VDD/VDDQ 60ball FBGA 32M x 16 NOTE : 1. VDD/VDDQ SPEC for 128Mb DDR L-die VDD/VDDQ 66pinTSOPII 128M x 4 60ball FBGA SSTL_2 8K/64m 2.50.2V*2 66pinTSOPII 60ball FBGA 66pinTSOPII 60ball FBGA Now Apr. 2010 Product Guide Consumer Memory 2.3 DDR2 SDRAM Density Banks Part Number 128Mb O-die 4Banks K4T28163QO 256Mb I-die 4Banks 256Mb N-die 4Banks 512Mb G-die 4Banks 512Mb I-die 4Banks 1Gb E-die 8Banks 1Gb F-die 8Banks Package & Power, Org. Interface Refresh Power (V) Package Avail. HCF8/E7/F7/E6 8M x 16 SSTL_18 4K/64m 1.8V0.1V 84ball FBGA Now K4T56163QI Z*1C(L)E7/F7/E6/D5/CC 16M x 16 SSTL_18 8K/64m 1.8V0.1V 84ball FBGA Now SSTL_18 8K/64m 1.8V0.1V 84ball FBGA Now Temp. (-C/-L) & Speed K4T56163QN HCF8/E7/F7/E6 16M x 16 K4T51083QG HC(L)F8/E7/F7/E6 64M x 8 K4T51163QG HC(L)F8/E7/F7/E6 32M x 16 K4T51043QI HC(L)E7/F7/E6 128M x 4 K4T51083QI HC(L)E7/F7/E6 64M x 8 K4T51163QI HC(L)F8/E7/F7/E6 32M x 16 K4T1G084QE HC(L)F8/E7/F7/E6 128M x 8 K4T1G164QE HC(L)F8/E7/F7/E6 64M x 16 SSTL_18 8K/64m 1.8V0.1V SSTL_18 8K/64m 1.8V0.1V 60ball FBGA 84ball FBGA Now 60ball FBGA Now 84ball FBGA Now 60ball FBGA SSTL_18 8K/64m 1.8V0.1V SSTL_18 8K/64m 1.8V0.1V Interface Refresh Power (V) SSTL_15 8K/64m 1.5V0.075V SSTL_15 8K/64m 1.5V0.075V SSTL_15 8K/64m 1.5V0.075V Org. Interface Refresh Power (V) PKG Avail. K4T1G084QF BC(L)F8/E7/F7/E6 128M x 8 K4T1G164QF BC(L)F8/E7/F7/E6 64M x 16 84ball FBGA 60ball FBGA 84ball FBGA Now Now NOTE : 1. 128Mb I-die DDR2 84ball FBGA supports Halogen-free package 2.4 DDR3 SDRAM Density Banks 1Gb E-die 8Banks 2Gb B-die 8Banks 2Gb C-die 8Banks Part Number Package & Power, Temp. (-C/-L) & Speed Org. K4B1G0846E HC(L)F7/F8/H9/K0 128M x 8 K4B1G1646E HC(L)F7/F8/H9/K0 64M x 16 K4B2G0846B HC(L)F7/F8/H9/K0 256M x 8 K4B2G1646B HC(L)F7/F8/H9/K0 128M x 16 K4B2G0846C HC(L)F8/H9/K0 256M x 8 K4B2G1646C HC(L)F8/H9/K0 128M x 16 PKG 78ball FBGA 96ball FBGA 78ball FBGA 96ball FBGA 78ball FBGA 96ball FBGA Avail. Now Now Now 2.5 DDR3+ SDRAM Part Number Package & Power, Density Banks 1Gb E-die 8Banks K4B1G1646E HQH9 64M x 16 SSTL_15 8K/64m 1.5V0.075V 96ball FBGA Now 2Gb C-die 8Banks K4B2G1646C HQH9 128M x 16 SSTL_15 8K/64m 1.5V0.075V 96ball FBGA Now Temp. (-C/-L) & Speed NOTE : For more details about product specifications or technical files, please contact us "semiconductor@samsung.com" -5- Apr. 2010 Product Guide Consumer Memory 2.6 GDDR SDRAM Density Banks Part Number Package & Power, Temp. (-C/-L) & Speed Org. Interface Refresh Power (V) 4Banks K4D263238K VC40/50 Avail. Lead-free & Halogenfree 144ball FBGA FC40/50 128Mb K-die PKG 4M x 32 SSTL_2 4K/32m 2.5V5% Lead-free 144ball FBGA 3Q. '10 EOL Lead-free & Halogenfree U*1C40/50 100pin TQFP*1 NOTE : 1. 128Mb K-die GDDR TQFP supports Lead-free & Halogen-free package with Lead-free package code(-U) 2.7 GDDR3 SDRAM Density Banks Part Number 1Gb E-die 8Banks K4J10324KE Package & Power, Temp. (-C/-L) & Speed HC7A/08/1A/12/14 Org. Interface Refresh Power (V) PKG Avail. 32M x 32 SSTL_2 8K/32m 1.8V0.1V 136ball FBGA Now -6- Apr. 2010 Product Guide Consumer Memory 3. Industrial Temperature Consumer DRAM Component Product Guide 3.1 SDRAM Density Bank 64Mb N-die 4Banks Package & Power, Temp. & Speed Part Number Org. Interface Refresh Power (V) Package Avail. 4M x 16 LVTTL 4K/64ms 3.30.3V 54pin TSOP(II) Now KS641632N LI(P)60/I(P)75 8M x 16 LVTTL 4K/64ms 3.30.3V 8M x 16 LVTTL 4K/64ms 3.30.3V 128Mb K-die 4Banks K4S281632K U*1I(P)60/I(P)75 128Mb O-die 4Banks K4S281632O LI(P)60/I(P)75 16M x 16 LVTTL 8K/64ms 3.30.3V 16M x 16 LVTTL 8K/64ms 3.30.3V 256Mb J-die 4Banks K4S561632J U*1I(P)60/I(P)75 256Mb N-die 4Banks K4S561632N LI(P)60/I(P)75 54pin TSOP(II)*1 54pin TSOP(II) 54pin TSOP(II)*1 Now 3Q '10 Now 54pin TSOP(II) 2Q '10 Package Avail. NOTE : 1. 128Mb K-die SDR and 256Mb J-die SDR DRAMs support Lead-free & Halogen-free package with Lead-free package code(-U) 3.2 DDR SDRAM Density Bank Package & Power, Temp. & Speed Part Number K4H510838F 512Mb F-die 512Mb G-die 4Banks 4Banks LI(P)B3 LI(P)B3 K4H511638F HI(P)B3 LI(P)CC/B3 K4H511638G HI(P)CC/B3 Org. Interface Refresh Power (V) 8K/64m 2.50.2V*1 66pinTSOPII 64M x 8 32M x 16 SSTL_2 66pinTSOPII Now 60ball FBGA 66pinTSOPII 32M x 16 SSTL_2 8K/64m 2.50.2V*1 Org. Interface Refresh Power (V) Package Avail. 32M x 16 SSTL_18 8K/64m 1.8V0.1V 84ball FBGA Now 32M x 16 SSTL_18 8K/64m 1.8V0.1V 84ball FBGA Now SSTL_18 8K/64m 1.8V 0.1V 60ball FBGA Now 84ball FBGA Now SSTL_18 8K/64m 1.8V 0.1V Interface Refresh Power (V) 60ball FBGA Now NOTE : 1. VDD/VDDQ SPEC for 256/512Mb DDR VDD/VDDQ DDR400 DDR333/266 2.6V 0.1V 2.5V 0.2V 3.3 DDR2 SDRAM Density Bank 512Mb G-die 4Banks 512Mb I-die 4Banks 1Gb E-die 8Banks 1Gb F-die 8Banks Part Number Package & Power, Temp. & Speed K4T51163QG HI(P)F7/I(P)E6/I(P)D5/ I(P)CC K4T51163QG HDE6 K4T51163QI HI(P)E7/I(P)F7/I(P)E6 K4T51163QI HDE7/E6 K4T1G084QE HI(P)F7/I(P)E6 128M x 8 K4T1G164QE HI(P)F7/I(P)E6 64M x 16 K4T1G084QF BI(P)F7/I(P)E6 128M x 8 K4T1G164QF BI(P)F7/I(P)E6 64M x 16 60ball FBGA 84ball FBGA 2Q '10 3.4 DDR3 SDRAM Part Number Package & Power, Temp. & Speed Density Bank Org. 1Gb E-die 8Banks K4B1G1646E HI(P)H9 64M x 16 SSTL_15 8K/64m 1.5V0.075V 96ball FBGA Now 2Gb B-die 8Banks K4B2G1646B HI(P)H9 128M x 16 SSTL_15 8K/64m 1.5V0.075V 96ball FBGA Now 2Gb C-die 8Banks K4B2G1646C HI(P)H9 128M x 16 SSTL_15 8K/64m 1.5V0.075V 96ball FBGA 2Q '10 -7- Package Avail. Apr. 2010 Product Guide Consumer Memory 4. Package Dimension 54Pin TSOP(II) (for SDRAM) #27 (10.76) (10) (10) (0.50) (0.80) (1.50) 0.075 MAX 0. 25 ) [ (R (R 0. 25 ) +0.10 0.35 - 0.05 (4) 0.05 MIN (R (0.71) [ 0. 15 ) 0.10 MAX (10) 0.80TYP [0.80 0.08] 0.45 ~ 0.75 0.125 - 0.035 1.20 MAX (10) 0.1 5) 1.00 0.10 0.210 0.05 0.665 0.05 +0.075 22.22 0.10 (R 11.76 0.20 #1 (1.50) (0.80) #28 10.16 0.10 #54 (0.50) Units : Millimeters NOTE 1. ( ) IS REFERENCE 2. [ ] IS ASS'Y OUT QUALITY 0.25TYP (0 8) 66Pin TSOP(II) (for DDR) #33 (10.76) (0.50) NOTE 1. ( ) IS REFERENCE 2. [ ] IS ASS'Y OUT QUALITY Detail A 0. 25 ) (4) (R 0.075 MAX 0. 25 ) Detail B [ (R Detail A 0.05 MIN 0. 15 ) (0.71) (10) 0.45 ~ 0.75 1.20 MAX 1.00 0.10 (10) 0.10 MAX (R (10) (10) (0.80) (1.50) 0.210 0.05 (R 0.1 5) 0.125 - 0.035 [ 0.665 0.05 +0.075 22.22 0.10 0.65TYP [0.65 0.08] 11.76 0.20 #1 (1.50) (0.80) #34 10.16 0.10 #66 (0.50) Units : Millimeters 0.25TYP Detail B (0 8) 0.25 0.08 0.30 0.08 -8- Apr. 2010 Product Guide Consumer Memory 60Ball FBGA (For DDR 64Mb N-die) #A1 Units : Millimeters 0.10 Max 8.00 0.10 8.0 0 0.10 A #A1 MARK 0.80 x 8 = 6.40 0.80 9 8 1.60 7 6 5 4 3 2 B 1 (Datum A) A B (Datum B) C 12.00 0.10 E F 0.50 G H 12.00 0.10 1.00 x 11 = 11.00 D J 1.00 K L M 0.32 0.05 1.10 0.10 TOP VIEW 60 - 0.45 SOLDER BALL (Post Reflow 0.50 0.05) 0.20 M BOTTOM VIEW A B 60Ball FBGA (For DDR 512Mb F-die, 512Mb G-die) Units : Millimeters 9.00 0.10 A 1.00MAX 0.80 x8 = 6.40 9.00 0.10 0.80 x4 = 3.20 WINDOW MOLD AREA 0.80 x2= 1.60 9 8 7 6 #A1 MARK(option) 0.80 x2 = 1.60 5 4 3 2 B 1 0.80 A B 0.50 F G 0.50 H 0.45 0.05 J K L M 60-0.45 0.05 0.20 M A B 1.20 MAX (0.90) (0.90) (1.80) (Datum A) 4-CORNER MARK(option) TOP VIEW BOTTOM VIEW -9- 12.00 0.10 12.00 0.10 E 1.00 x11= 11.00 C D 5.50 (Datum B) 1.00 #A1 Apr. 2010 Product Guide Consumer Memory 60Ball FBGA (For DDR2 x8) Units : Millimeters 0.10MAX # A1 INDEX MARK 7.50 0.10 7.50 0.10 MOLDING AREA A 0.80 x 8 = 6.40 #A1 0.80 B 1.60 (Datum A) 9 (Datum B) 8 7 6 5 4 3 2 1 A B E 0.50 0.05 F 0.80 G H 9.50 0.10 9.50 0.10 D 0.80 x 10 = 8.00 C J K L 0.350.05 1.100.10 (0.95) (1.90) 60-0.45 Solder ball (Post reflow 0.50 0.05) 0.2 M A B TOP VIEW BOTTOM VIEW 0.10MAX 84Ball FBGA (For DDR2 128Mb O-die/256Mb N-die/512Mb G-die, I-die/1Gb E-die) 7.50 0.10 Units : Millimeters 7.50 0.10 A 0.80 x 8 = 6.40 #A1 0.80 9 (Datum A) # A1 INDEX MARK 3.20 MOLDING AREA 8 7 1.60 6 5 4 B 3 2 1 A B (Datum B) C D H 0.80 J K 12.50 0.10 0.80 x 14 = 11.20 F G 0.500.05 L 5.60 12.50 0.10 E M N P R 0.350.05 1.100.10 (0.95) (1.90) 84-0.45 Solder ball (Post reflow 0.50 0.05) 0.2 M A B TOP VIEW BOTTOM VIEW - 10 - Apr. 2010 Product Guide Consumer Memory 60Ball FBGA (for DDR2 1Gb F-die x8) 0.10MAX Units : Millimeters 7.50 0.10 A 0.80 x 8 = 6. 40 7.50 0.10 # A1 INDEX MARK 3.20 (Datum A) 0.80 #A1 9 8 7 1.60 6 5 4 B 3 2 1 A C 0.80 x 10 = 8.00 D 9.50 0.10 E F H 4.00 0.80 G J 9.50 0.10 0.80 B (Datum B) K L 0.370.05 1.100.10 (0.30) 60-0.48 Solder ball (Post reflow 0.50 0.05) (0.60) 0.2 M A B TOP VIEW MOLDING AREA BOTTOM VIEW 84Ball FBGA (for DDR2 1Gb F-die x16) 0.10MAX Units : Millimeters 7.50 0.10 A 0.80 x 8 = 6. 40 7.50 0.10 # A1 INDEX MARK 3.20 0.80 #A1 9 (Datum A) 8 7 1.60 6 5 4 B 3 2 1 A B C D 12.50 0.10 F G H 0.80 J K 5.60 L M N P R 0.370.05 1.100.10 (0.30) MOLDING AREA 84-0.48 Solder ball (Post reflow 0.50 0.05) 0.2 M A B TOP VIEW - 11 - (0.60) BOTTOM VIEW 12.50 0.10 E 0.80 x 14 = 11.20 0.80 (Datum B) Apr. 2010 Product Guide Consumer Memory 84Ball FBGA (For DDR2 256Mb I-die) Units : Millimeters 0.10MAX 9.00 0.10 9.00 0.10 A 0.80 x 8 = 6.40 3.20 0.80 #A1 9 (Datum A) 8 # A1 INDEX MARK 1.60 7 6 5 4 B 3 2 1 A B 0.80 (Datum B) C D 0.80 x 14 = 11.20 13.00 0.10 F G H 0.80 J K 5.60 L 13.00 0.10 E M N P R 0.35 0.05 1.10 0.10 (0.95) 84-0.45 Solder ball (Post reflow 0.50 0.05) 0.2 M A B TOP VIEW MOLDING AREA (1.90) BOTTOM VIEW 78Ball FBGA (for DDR3 1Gb x8 E-die / DDR3 2Gb x8 C-die) 0.10MAX 7.50 0.10 0.80 (Datum A) 7.50 0.10 1.60 A #A1 INDEX MARK 3.20 B 0.35 0.05 1.10 0.10 (0.95) 78 - 0.45 Solder ball (Post Reflow 0.50 0.05) 0.2 M A B TOP VIEW MOLDING AREA (1.90) BOTTOM VIEW - 12 - 11.00 0.10 4.80 0.80 0.80 (Datum B) A B C D E F G H J K L M N 0.80 x 12 = 9.60 9 8 7 6 5 4 3 2 1 11.00 0.10 #A1 Units : Millimeters Apr. 2010 Product Guide Consumer Memory 96Ball FBGA (for DDR3 1Gb x16 E-die / DDR3+ 1Gb x16 E-die / DDR3 2Gb x16 C-die) 7.50 0.10 0.10MAX #A1 Units : Millimeters 0.80 7.50 0.10 A #A1 INDEX MARK 1.60 3.20 B 9 8 7 6 5 4 3 2 1 0.35 0.05 1.10 0.10 MOLDING AREA (1.90) 0.2 M A B BOTTOM VIEW 78Ball FBGA (for DDR3 2Gb x8 B-die) Units : Millimeters 0.10MAX 9.00 0.10 A 0.80 x 8 = 6.40 0.80 (Datum A) 9.00 0.10 1.60 #A1 INDEX MARK 3.20 B 0.35 0.05 1.10 0.10 (0.95) 78 - 0.45 Solder ball (Post Reflow 0.50 0.05) 0.2 M A B TOP VIEW MOLDING AREA (1.90) BOTTOM VIEW - 13 - 11.50 0.10 4.80 0.80 0.80 (Datum B) A B C D E F G H J K L M N 0.80 x 12 = 9.60 9 8 7 6 5 4 3 2 1 11.50 0.10 #A1 13.30 0.10 (0.95) 96 - 0.45 Solder ball (Post Reflow 0.50 0.05) TOP VIEW 0.80 x 15 = 12.00 0.40 0.80 13.30 0.10 (Datum B) 6.00 A B C D E F G H J K L M N P R T (Datum A) Apr. 2010 Product Guide Consumer Memory 96Ball FBGA (for DDR3 2Gb x16 B-die) Units : Millimeters 0.10MAX 9.00 0.10 #A1 A 0.80 x 8 = 6.40 #A1 INDEX MARK 0.80 1.60 9.00 0.10 3.20 B 9 8 7 6 5 4 3 2 1 0.35 0.05 1.10 0.10 (0.95) 96 - 0.45 Solder ball (Post Reflow 0.50 0.05) MOLDING AREA (1.90) 0.2 M A B TOP VIEW BOTTOM VIEW 136Ball FBGA (for GDDR3 1Gb E-die) 0.10MAX Units : Millimeters 10.00 0.10 A 0.80 x 11 = 8.80 # A1 INDEX MARK 4.40 0.80 10.00 0.10 12 11 10 9 2.00 8 7 6 5 4 3 2 B 1 (Datum A) A B 0.80 C D (Datum B) E 0.80 x 16 = 12.80 H J K 0.80 L 6.40 M N P R T V 0.35 0.05 1.10 0.10 0.95 136-0.45 Solder ball (Post reflow 0.50 0.05) TOP VIEW 0.2 M A B - 14 - 1.90 MOLDING AREA BOTTOM VIEW 14.00 0.10 F G 14.00 0.10 #A1 13.30 0.10 0.80 x 15 = 12.00 0.40 0.80 13.30 0.10 (Datum B) 6.00 A B C D E F G H J K L M N P R T (Datum A) Apr. 2010 Product Guide Consumer Memory For further information, semiconductor@samsung.com - 15 -