- 1 -
Apr. 2010
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Product Guide
Consumer Memory
- 2 -
Product Guide Consumer Memory
Apr. 2010
1. CONSUMER MEMORY ORDERING INFORMATION
3. Product
4. Density & Refresh
5. Organization
6. Bank
7. Interface ( VDD, VDDQ)
9. Package Type
8. Revision
1. SAMSUNG Memory : K
2. DRAM : 4
Revision
Bank
Organization
Density & Refresh
Product
DRAM
SAMSUNG Memory
Interface (VDD, VDDQ)
Package Type
Temperature & Power
K 4 X X X X X X X X - X X X X
1 2 3 4 5 6 7 8 9 10 11
Speed
10. Temperature & Power
S:SDRAM
H:DDR SDRAM
T:DDR2 SDRAM
B:DDR3 SDRAM
D:GDDR
J:GDDR3
64 :64Mb, 4K/64ms
28 :128Mb, 4K/64ms
56 :256Mb, 8K/64ms
51 :512Mb, 8K/64ms
1G :1Gb, 8K/64ms
2G :2Gb, 8K/64ms
10 :1Gb, 8K/32ms
04 :x4
08 :x8
16 :x16
32 :x32
31 :x32 (2CS)
2:2 Banks
3:4 Banks
4:8 Banks
2:LVTTL (3.3V, 3.3V)
8:SSTL_2 (2.5V, 2.5V)
Q:SSTL_18 (1.8V, 1.8V)
6:SSTL_15 (1.5V, 1.5V)
K:POD_18 (1.8V, 1.8V)
M:1st Gen. H :9th Gen.
A:2nd Gen. I :10th Gen.
B:3rd Gen. J :11th Gen.
C:4th Gen. K :12th Gen.
D:5th Gen. L :13th Gen.
E:6th Gen. N :14th Gen.
F:7th Gen. O :15th Gen.
G:8th Gen. S :19th Gen.
U:TSOPII (Lead-free)
100TQFP(Lead-free) only for 128Mb GDDR
Z:FBGA (Lead-free)
V:144FBGA (Lead-free) only for 128Mb GDDR
L:TSOPII (Lead-free & Halogen-free)
H:FBGA (Lead-free & Halogen-free)
F:FBGA(Lead-free & Halogen-free) for 64Mb DDR, 128Mb GDDR
M:FBGA DDP (Lead-free & Halogen-free)
B:FBGA FLIP-CHIP (Lead-free & Halogen-free)
C:Commercial Temp. & Normal Power
L:Commercial Temp. & Low Power
I:Industrial Temp. & Normal Power
P:Industrial Temp. & Low Power
D:Industrial Temp. & Super Low Power
Q:Commercial Temp. DDR3+ (Gapless, BL4)
- 3 -
Product Guide Consumer Memory
Apr. 2010
11. Speed
Revision
Bank
Organization
Density & Refresh
Product
DRAM
SAMSUNG Memory
Interface (VDD, VDDQ)
Package Type
Temperature & Power
K 4 X X X X X X X X - X X X X
1 2 3 4 5 6 7 8 9 10 11
Speed
75 :7.5ns, PC133 (133MHz CL=3)
60 :6.0ns (166MHz CL=3)
50 :5.0ns (200MHz CL=3)
40 :4.0ns (250MHz CL=3)
B0 :DDR266 (133MHz @ CL=2.5, tRCD=3, tRP=3)
B3 :DDR333 (166MHz @ CL=2.5, tRCD=3, tRP=3)
CC :DDR400 (200MHz @ CL=3, tRCD=3, tRP=3)
E6 :DDR2-667 (333MHz @ CL=5, tRCD=5, tRP=5)
E7 :DDR2-800 (400MHz @ CL=5, tRCD=5, tRP=5)
F7 :DDR2/3-800 (400MHz @ CL=6, tRCD=6, tRP=6)
F8 :DDR2/3-1066 (533MHz @ CL=7, tRCD=7, tRP=7)
H9 :DDR3-1333 (667MHz @ CL=9, tRCD=9, tRP=9)
K0 :DDR3-1600 (800MHz @ CL=11, tRCD=11, tRP=11)
7A :GDDR3-2.6Gbps (0.77ns)
08 :GDDR3-2.4Gbps (0.8ns)
1A :GDDR3-2.0Gbps (1.0ns)
12 :GDDR3-1.6Gbps (1.25ns)
14 :GDDR3-1.4Gbps (1.4ns)
- 4 -
Product Guide Consumer Memory
Apr. 2010
2. Commercial Temperature Consumer DRAM Component Product Guide
2.1 SDRAM
NOTE : 1. 128Mb K-die SDR and 256Mb J-die SDR DRAMs support Lead-free & Halogen-free package with Lead-free package code(-U)
2.2 DDR SDRAM
NOTE : 1. VDD/VDDQ SPEC for 128Mb DDR L-die
2. VDD/VDDQ SPEC for 256/512Mb DDR
Density Bank Part Number Package & Power,
Temp. (-C/-L) & Speed Org. Interface Refresh Power (V) Package Avail.
64Mb N-die 4Banks K4S640832N LC(L)75 8M x 8 LVTTL 4K/64ms 3.3±0.3V 54pin TSOP(II) Now
K4S641632N LC(L)50/C(L)60/C(L)75 4M x 16
128Mb K-die 4Banks K4S280832K U*1C(L)75 16M x 8 LVTTL 4K/64ms 3.3±0.3V 54pin TSOP(II)*1 Now
K4S281632K UC(L)50/C(L)60/C(L)75 8M x 16
128Mb O-die 4Banks K4S280832O LC(L)75 16M x 8 LVTTL 4K/64ms 3.3±0.3V 54pin TSOP(II) 3Q’10
K4S281632O LC(L)50/C(L)60/C(L)75 8M x 16
256Mb J-die 4Banks
K4S560432J U*1C(L)75 64M x 4
LVTTL 8K/64ms 3.3±0.3V 54pin TSOP(II)*1 Now
K4S560832J UC(L)75 32M x 8
K4S561632J UC(L)60/C(L)75 16M x 16
256Mb N-die 4Banks
K4S560432N LC(L)75 64M x 4
LVTTL 8K/64ms 3.3±0.3V 54pin TSOP(II) NowK4S560832N LC(L)75 32M x 8
K4S561632N LC(L)60/C(L)75 16M x 16
Density Bank Part Number Package & Power,
Temp. (-C/-L) & Speed Org. Interface Refresh Power (V) Package Avail.
64Mb N-die 4Banks K4H641638N LC(L)CC 4M x 16 SSTL_2 4K/64m 2.5±0.2V 66pinTSOPII Now
FC(L)CC 60ball FBGA
64Mb Q-die 4Banks K4H641638Q LC(L)CC 4M x 16 SSTL_2 4K/64m 2.5±0.2V 66pinTSOPII 2Q’10
128Mb L-die 4Banks K4H281638L LC(L)/C(L)CC 8M x 16 SSTL_2 4K/64m 2.5±0.2V*1 66pinTSOPII Now
128Mb O-die 4Banks K4H281638O LC(L)CC/C(L)B3 8M x 16 SSTL_2 4K/64m 2.5±0.2V*1 66pinTSOPII 2Q’10
256Mb J-die 4Banks
K4H560438J LC(L)B3/C(L)B0 64M x 4
SSTL_2 8K/64m 2.5±0.2V*2 66pinTSOPII NowK4H560838J LC(L)CC/C(L)B3 32M x 8
K4H561638J LC(L)CC/C(L)B3 16M x 16
256Mb N-die 4Banks
K4H560438N LC(L)B3/C(L)B0 64M x 4
SSTL_2 8K/64m 2.5±0.2V*2 66pinTSOPII NowK4H560838N LC(L)CC/C(L)B3 32M x 8
K4H561638N LC(L)CC/C(L)B3 16M x 16
512Mb F-die 4Banks
K4H510438F LC(L)B3/C(L)B0 128M x 4
SSTL_2 8K/64m 2.5±0.2V*2
66pinTSOPII
Now
HC(L)CC/C(L)B3 60ball FBGA
K4H510838F LC(L)CC/C(L)B3 64M x 8 66pinTSOPII
HC(L)CC/C(L)B3 60ball FBGA
K4H511638F LC(L)CC/C(L)B3 32M x 16 66pinTSOPII
HC(L)CC/C(L)B3 60ball FBGA
512Mb G-die 4Banks
K4H510438G LC(L)B3/C(L)B0 128M x 4
SSTL_2 8K/64m 2.5±0.2V*2
66pinTSOPII
Now
HC(L)CC/C(L)B3 60ball FBGA
K4H510838G LC(L)CC/C(L)B3 64M x 8 66pinTSOPII
HC(L)CC/C(L)B3 60ball FBGA
K4H511638G LC(L)CC/C(L)B3 32M x 16 66pinTSOPII
HC(L)CC/C(L)B3 60ball FBGA
DDR500 DDR400
VDD/VDDQ 2.5V ± 0.125V 2.5V ± 0.2V
DDR400 DDR333/266
VDD/VDDQ 2.6V ± 0.1V 2.5V ± 0.2V
- 5 -
Product Guide Consumer Memory
Apr. 2010
2.3 DDR2 SDRAM
NOTE : 1. 128Mb I-die DDR2 84ball FBGA supports Halogen-free package
2.4 DDR3 SDRAM
2.5 DDR3+ SDRAM
NOTE : For more details about product specifications or technical files, please contact us "semiconductor@samsung.com"
Density Banks Part Number Package & Power,
Temp. (-C/-L) & Speed Org. Interface Refresh Power (V) Package Avail.
128Mb O-die 4Banks K4T28163QO HCF8/E7/F7/E6 8M x 16 SSTL_18 4K/64m 1.8V±0.1V 84ball FBGA Now
256Mb I-die 4Banks K4T56163QI Z*1C(L)E7/F7/E6/D5/CC 16M x 16 SSTL_18 8K/64m 1.8V±0.1V 84ball FBGA Now
256Mb N-die 4Banks K4T56163QN HCF8/E7/F7/E6 16M x 16 SSTL_18 8K/64m 1.8V±0.1V 84ball FBGA Now
512Mb G-die 4Banks K4T51083QG HC(L)F8/E7/F7/E6 64M x 8 SSTL_18 8K/64m 1.8V±0.1V 60ball FBGA Now
K4T51163QG HC(L)F8/E7/F7/E6 32M x 16 84ball FBGA
512Mb I-die 4Banks
K4T51043QI HC(L)E7/F7/E6 128M x 4
SSTL_18 8K/64m 1.8V±0.1V 60ball FBGA Now
K4T51083QI HC(L)E7/F7/E6 64M x 8
K4T51163QI HC(L)F8/E7/F7/E6 32M x 16 84ball FBGA Now
1Gb E-die 8Banks K4T1G084QE HC(L)F8/E7/F7/E6 128M x 8 SSTL_18 8K/64m 1.8V±0.1V 60ball FBGA Now
K4T1G164QE HC(L)F8/E7/F7/E6 64M x 16 84ball FBGA
1Gb F-die 8Banks K4T1G084QF BC(L)F8/E7/F7/E6 128M x 8 SSTL_18 8K/64m 1.8V±0.1V 60ball FBGA Now
K4T1G164QF BC(L)F8/E7/F7/E6 64M x 16 84ball FBGA
Density Banks Part Number Package & Power,
Temp. (-C/-L) & Speed Org. Interface Refresh Power (V) PKG Avail.
1Gb E-die 8Banks K4B1G0846E HC(L)F7/F8/H9/K0 128M x 8 SSTL_15 8K/64m 1.5V±0.075V 78ball FBGA Now
K4B1G1646E HC(L)F7/F8/H9/K0 64M x 16 96ball FBGA
2Gb B-die 8Banks K4B2G0846B HC(L)F7/F8/H9/K0 256M x 8 SSTL_15 8K/64m 1.5V±0.075V 78ball FBGA Now
K4B2G1646B HC(L)F7/F8/H9/K0 128M x 16 96ball FBGA
2Gb C-die 8Banks K4B2G0846C HC(L)F8/H9/K0 256M x 8 SSTL_15 8K/64m 1.5V±0.075V 78ball FBGA Now
K4B2G1646C HC(L)F8/H9/K0 128M x 16 96ball FBGA
Density Banks Part Number Package & Power,
Temp. (-C/-L) & Speed Org. Interface Refresh Power (V) PKG Avail.
1Gb E-die 8Banks K4B1G1646E HQH9 64M x 16 SSTL_15 8K/64m 1.5V±0.075V 96ball FBGA Now
2Gb C-die 8Banks K4B2G1646C HQH9 128M x 16 SSTL_15 8K/64m 1.5V±0.075V 96ball FBGA Now
- 6 -
Product Guide Consumer Memory
Apr. 2010
2.6 GDDR SDRAM
NOTE : 1. 128Mb K-die GDDR TQFP supports Lead-free & Halogen-free package with Lead-free package code(-U)
2.7 GDDR3 SDRAM
Density Banks Part Number Package & Power,
Temp. (-C/-L) & Speed Org. Interface Refresh Power (V) PKG Avail.
128Mb K-die 4Banks K4D263238K
FC40/50
4M x 32 SSTL_2 4K/32m 2.5V±5%
Lead-free & Halogen-
free
144ball FBGA
3Q. ’10
EOL
VC40/50 Lead-free
144ball FBGA
U*1C40/50
Lead-free & Halogen-
free
100pin TQFP*1
Density Banks Part Number Package & Power,
Temp. (-C/-L) & Speed Org. Interface Refresh Power (V) PKG Avail.
1Gb E-die 8Banks K4J10324KE HC7A/08/1A/12/14 32M x 32 SSTL_2 8K/32m 1.8V±0.1V 136ball FBGA Now
- 7 -
Product Guide Consumer Memory
Apr. 2010
3. Industrial Temperature Consumer DRAM Component Product Guide
3.1 SDRAM
NOTE : 1. 128Mb K-die SDR and 256Mb J-die SDR DRAMs support Lead-free & Halogen-free package with Lead-free package code(-U)
3.2 DDR SDRAM
NOTE : 1. VDD/VDDQ SPEC for 256/512Mb DDR
3.3 DDR2 SDRAM
3.4 DDR3 SDRAM
Density Bank Part Number Package & Power,
Temp. & Speed Org. Interface Refresh Power (V) Package Avail.
64Mb N-die 4Banks KS641632N LI(P)60/I(P)75 4M x 16 LVTTL 4K/64ms 3.3±0.3V 54pin TSOP(II) Now
128Mb K-die 4Banks K4S281632K U*1I(P)60/I(P)75 8M x 16 LVTTL 4K/64ms 3.3±0.3V 54pin TSOP(II)*1 Now
128Mb O-die 4Banks K4S281632O LI(P)60/I(P)75 8M x 16 LVTTL 4K/64ms 3.3±0.3V 54pin TSOP(II) 3Q ’10
256Mb J-die 4Banks K4S561632J U*1I(P)60/I(P)75 16M x 16 LVTTL 8K/64ms 3.3±0.3V 54pin TSOP(II)*1 Now
256Mb N-die 4Banks K4S561632N LI(P)60/I(P)75 16M x 16 LVTTL 8K/64ms 3.3±0.3V 54pin TSOP(II) 2Q ’10
Density Bank Part Number Package & Power,
Temp. & Speed Org. Interface Refresh Power (V) Package Avail.
512Mb F-die 4Banks
K4H510838F LI(P)B3 64M x 8
SSTL_2 8K/64m 2.5±0.2V*1
66pinTSOPII
Now
K4H511638F LI(P)B3 32M x 16 66pinTSOPII
HI(P)B3 60ball FBGA
512Mb G-die 4Banks K4H511638G LI(P)CC/B3 32M x 16 SSTL_2 8K/64m 2.5±0.2V*1 66pinTSOPII Now
HI(P)CC/B3 60ball FBGA
DDR400 DDR333/266
VDD/VDDQ 2.6V ± 0.1V 2.5V ± 0.2V
Density Bank Part Number Package & Power,
Temp. & Speed Org. Interface Refresh Power (V) Package Avail.
512Mb G-die 4Banks K4T51163QG HI(P)F7/I(P)E6/I(P)D5/
I(P)CC 32M x 16 SSTL_18 8K/64m 1.8V±0.1V 84ball FBGA Now
K4T51163QG HDE6
512Mb I-die 4Banks K4T51163QI HI(P)E7/I(P)F7/I(P)E6 32M x 16 SSTL_18 8K/64m 1.8V±0.1V 84ball FBGA Now
K4T51163QI HDE7/E6
1Gb E-die 8Banks K4T1G084QE HI(P)F7/I(P)E6 128M x 8 SSTL_18 8K/64m 1.8V ± 0.1V 60ball FBGA Now
K4T1G164QE HI(P)F7/I(P)E6 64M x 16 84ball FBGA Now
1Gb F-die 8Banks K4T1G084QF BI(P)F7/I(P)E6 128M x 8 SSTL_18 8K/64m 1.8V ± 0.1V 60ball FBGA 2Q ’10
K4T1G164QF BI(P)F7/I(P)E6 64M x 16 84ball FBGA
Density Bank Part Number Package & Power,
Temp. & Speed Org. Interface Refresh Power (V) Package Avail.
1Gb E-die 8Banks K4B1G1646E HI(P)H9 64M x 16 SSTL_15 8K/64m 1.5V±0.075V 96ball FBGA Now
2Gb B-die 8Banks K4B2G1646B HI(P)H9 128M x 16 SSTL_15 8K/64m 1.5V±0.075V 96ball FBGA Now
2Gb C-die 8Banks K4B2G1646C HI(P)H9 128M x 16 SSTL_15 8K/64m 1.5V±0.075V 96ball FBGA 2Q ’10
- 8 -
Product Guide Consumer Memory
Apr. 2010
4. Package Dimension
54Pin TSOP(II) (for SDRAM)
#1
(1.50)
(1.50)
#54 #28
#27
10.16 ± 0.10
(R 0.15)
22.22 ± 0.10
0.210 ± 0.05
0.665 ± 0.05
(R 0.15)
(0.71) [0.80 ± 0.08]
0.80TYP
0.35 +0.10
- 0.05
(10°)
1.00 ± 0.10
0.05 MIN
(10°)
1.20 MAX
0.10 MAX
0.075 MAX
[
[
(10.76)
0.125 +0.075
- 0.035
(10°)
(10°)
11.76 ± 0.20
(0.80)
(0.80)
(0.50)
(4°)
0.45 ~ 0.75
(0° ∼ 8°)
0.25TYP
(R 0.25)
(R 0.25)
(0.50)
NOTE
1. ( ) IS REFERENCE
2. [ ] IS ASS’Y OUT QUALITY
Units : Millimeters
66Pin TSOP(II) (for DDR)
#1
(1.50)
(1.50)
#66 #34
#33
10.16 ± 0.10
(R 0.15)
22.22 ± 0.10
0.210 ± 0.05
0.665 ± 0.05
(R 0.15)
(0.71) [0.65 ± 0.08]
0.65TYP
0.30
(10°)
(10°)
(10.76)
0.125 +0.075
- 0.035
(10°)
(10°)
11.76 ± 0.20
(0.80)
(0.80)
(0.50)
(0.50)
(4°)
0.45 ~ 0.75
(0° ∼ 8°)
0.25TYP
(R 0.25)
(R 0.25)
± 0.08
1.00 ± 0.10
0.05 MIN
1.20 MAX
0.10 MAX
0.075 MAX
[
[
NOTE
1. ( ) IS REFERENCE
2. [ ] IS ASS’Y OUT QUALITY
Detail A Detail B
Detail BDetail A
0.25 ± 0.08
Units : Millimeters
- 9 -
Product Guide Consumer Memory
Apr. 2010
60Ball FBGA (For DDR 64Mb N-die)
8.0 0 ± 0.10
12.00 ± 0.10
0.10 Max
0.32 ± 0.05
1.10 ± 0.10
8.00 ± 0.10
A
B
C
D
E
F
G
H
J
K
L
M
0.80
0.50
1.00 x 11 = 11.00
12.00 ± 0.10
60 - ∅ 0.45 SOLDER BALL
1.00
#A1 1.60
#A1 MARK
∅0.20 MAB
0.80 x 8 = 6.40
A
123456789
(Post Reflow 0.50 ± 0.05)
Units : Millimeters
(Datum A)
(Datum B)
B
TOP VIEW BOTTOM VIEW
60Ball FBGA (For DDR 512Mb F-die, 512Mb G-die)
TOP VIEW BOTTOM VIEW
12.00 ± 0.10
9.00 ± 0.10
#A1
1.00MAX
1.20 MAX
0.45 ± 0.05
WINDOW MOLD AREA
Units : Millimeters
9.00 ± 0.10
0.80 6.40
1.60
x8 =
B
5.50
1.00 11.00
x11=
A
(Datum B)
12.00 ± 0.10
A
B
C
D
E
F
G
H
J
K
L
M
0.50
60-∅0.45 ± 0.05
0.20 MAB
0.80 x2= 1.600.80 x2 =
#A1 MARK(option)
1.00
0.80
4-CORNER MARK(option)
(Datum A)
98765432 1
(0.90)(0.90)
(1.80)
0.80 x4 =
0.50
3.20
- 10 -
Product Guide Consumer Memory
Apr. 2010
TOP VIEW BOTTOM VIEW
60Ball FBGA (For DDR2 x8)
9.50 ± 0.10
7.50 ± 0.10
0.50 ± 0.05
0.10MAX
0.35±0.05
1.10±0.10
#A1
9.50 ± 0.10
0.80
7.50 ± 0.10
0.80 1.60
(0.95)
(1.90)
# A1 INDEX MARK
(Datum A)
(Datum B)
MOLDING AREA A
B
123456789
0.80 x 10 = 8.00
B
C
D
E
F
G
H
J
K
L
A
0.80 x 8 = 6.40
60-∅0.45 Solder ball
0.2 MAB
(Post reflow 0.50 ± 0.05)
Units : Millimeters
TOP VIEW BOTTOM VIEW
84Ball FBGA (For DDR2 128Mb O-die/256Mb N-die/512Mb G-die, I-die/1Gb E-die)
0.50±0.05
0.10MAX
0.35±0.05
1.10±0.10
12.50 ± 0.10
7.50 ± 0.10
#A1
12.50 ± 0.10
0.80
7.50 ± 0.10
123456789
3.20
0.80 1.60
(0.95)
(1.90)
5.60
# A1 INDEX MARK
(Datum A)
(Datum B)
MOLDING AREA
A
B
0.80 x 14 = 11.20
0.80 x 8 = 6.40
B
C
D
E
F
G
H
K
L
N
A
J
M
P
R
84-∅0.45 Solder ball
0.2 MAB
(Post reflow 0.50 ± 0.05)
Units : Millimeters
- 11 -
Product Guide Consumer Memory
Apr. 2010
TOP VIEW BOTTOM VIEW
60Ball FBGA (for DDR2 1Gb F-die x8) Units : Millimeters
(0.30)
# A1 INDEX MARK
(0.60)
9.50 ± 0.10
0.80 x 10 = 8.00
0.80
7.50 ± 0.10
1.60
0.80 x 8 = 6. 40
4.00
0.80
A
B
A
B
C
D
E
F
H
J
K
L
G
3.20
0.80
987654321
60-∅0.48 Solder ball
0.2 MAB
(Post reflow 0.50 ± 0.05)
MOLDING AREA
(Datum A)
(Datum B)
9.50 ± 0.10
7.50 ± 0.10
#A1
0.37±0.05
1.10±0.10
0.10MAX
TOP VIEW BOTTOM VIEW
84Ball FBGA (for DDR2 1Gb F-die x16) Units : Millimeters
(0.30)
# A1 INDEX MARK
(0.60)
12.50 ± 0.10
0.80 x 14 = 11.20
0.80
7.50 ± 0.10
1.60
0.80 x 8 = 6. 40
5.60
0.80
A
B
A
B
C
D
E
F
H
J
K
L
G
3.20
0.80
987654321
84-∅0.48 Solder ball
0.2 MAB
(Post reflow 0.50 ± 0.05)
MOLDING AREA
(Datum A)
(Datum B)
M
N
P
R
12.50 ± 0.10
7.50 ± 0.10
#A1
0.37±0.05
1.10±0.10
0.10MAX
- 12 -
Product Guide Consumer Memory
Apr. 2010
TOP VIEW BOTTOM VIEW
84Ball FBGA (For DDR2 256Mb I-die) Units : Millimeters
B
C
D
E
F
G
H
J
K
L
A
9.00 ± 0.10
6.40
0.80 1.60
# A1 INDEX MARK
0.80 x 8 =
123456789
3.20
13.00 ± 0.10
0.80
0.80
0.80
11.20x 14 =
5.60
(0.95)
(1.90)
84-∅0.45 Solder ball
0.2 MAB
(Post reflow 0.50 ± 0.05)
(Datum A)
(Datum B)
A
B
MOLDING AREA
M
N
P
R
9.00 ± 0.10
13.00 ± 0.10
#A1
0.10MAX
0.35 ± 0.05
1.10 ± 0.10
0.10MAX
1.10 ± 0.10
#A1 7.50 ± 0.10
11.00 ± 0.10
0.35 ± 0.05
TOP VIEW
A
B
C
D
E
F
G
H
M
N
7.50 ± 0.10
0.80 x 12 = 9.60
3.20
0.80
4.80
78 - ∅0.45 Solder ball
0.2 ABM
(Datum B)
(Datum A) 1.60
MOLDING AREA
#A1 INDEX MARK
B
A
BOTTOM VIEW
11.00 ± 0.10
J
K
L
0.80 0.80
(Post Reflow ∅0.50 ± 0.05)
(0.95)
(1.90)
876543219
78Ball FBGA (for DDR3 1Gb x8 E-die / DDR3 2Gb x8 C-die) Units : Millimeters
- 13 -
Product Guide Consumer Memory
Apr. 2010
A
B
C
D
E
F
G
H
J
L
M
N
P
R
T
7.50 ± 0.10
3.20
0.80
6.00
(Datum B)
(Datum A)
0.10MAX
1.10 ± 0.10
#A1 1.60
7.50 ± 0.10
13.30 ± 0.10
0.35 ± 0.05
#A1 INDEX MARK
TOP VIEW
13.30 ± 0.10
K
0.80 x 15 = 12.00
B
A
0.80 0.40
96 - ∅0.45 Solder ball
0.2 ABM
MOLDING AREA
(Post Reflow ∅0.50 ± 0.05)
(0.95)
(1.90)
BOTTOM VIEW
876543219
96Ball FBGA (for DDR3 1Gb x16 E-die / DDR3+ 1Gb x16 E-die / DDR3 2Gb x16 C-die) Units : Millimeters
0.10MAX
1.10
±
0.10
#A1 9.00
±
0.10
11.50 ± 0.10
0.35
±
0.05
TOP VIEW
A
B
C
D
E
F
G
H
M
N
9.00
±
0.10
0.80 x 12 = 9.60
0.80 x 8 = 6.40
3.20
0.80
4.80
78 -
∅
0.45 Solder ball
0.2 ABM
(Datum B)
(Datum A)
876543219
1.60
MOLDING AREA
#A1 INDEX MARK
B
A
BOTTOM VIEW
11.50 ± 0.10
J
K
L
0.80 0.80
(Post Reflow
∅
0.50
±
0.05)
(0.95)
(1.90)
78Ball FBGA (for DDR3 2Gb x8 B-die) Units : Millimeters
- 14 -
Product Guide Consumer Memory
Apr. 2010
TOP VIEW BOTTOM VIEW
96Ball FBGA (for DDR3 2Gb x16 B-die) Units : Millimeters
0.10MAX
1.10 ± 0.10
#A1 9.00 ± 0.10
13.30 ± 0.10
0.35 ± 0.05
A
B
C
D
E
F
G
H
J
L
M
N
P
R
T
9.00 ± 0.10
3.20
0.80
6.00
(Datum B)
(Datum A)
876543219
1.60
#A1 INDEX MARK
13.30 ± 0.10
K
0.80 x 15 = 12.00
0.80 x 8 = 6.40
B
A
0.80 0.40
96 - ∅0.45 Solder ball
0.2 ABM
MOLDING AREA
(Post Reflow ∅0.50 ± 0.05)
(0.95)
(1.90)
TOP VIEW BOTTOM VIEW
136Ball FBGA (for GDDR3 1Gb E-die)
A
B
C
D
E
F
H
J
K
L
M
N
P
R
G
T
V
876543219101112
10.00 ± 0.10
0.80 2.00
4.40
0.80 x 11 = 8.80
14.00 ± 0.10
6.40
0.80 x 16 = 12.80
A
B
# A1 INDEX MARK
(Datum B)
MOLDING AREA
0.95
1.90
136-
∅
0.45 Solder ball
0.2 MAB
(Post reflow 0.50
±
0.05)
(Datum A)
0.800.80
10.00 ± 0.10
14.00 ± 0.10
#A1
0.10MAX
0.35 ± 0.05
1.10 ± 0.10
Units : Millimeters
- 15 -
Product Guide Consumer Memory
Apr. 2010
For further information,
semiconductor@samsung.com
