FIELD EFFECT TRANSISTOR, SILICON, N CHANNEL TRANSISTOR A EFFET DE CHAMP, SILICIUM, CANAL N 2N 3824 Chopper Dcoupeur Maximum power dissipation Ipsx 0,1 nA max "ds on 2502 max Case TO-72 See outline drawing CB-4 on last pages Dissipation de puissance maximale Boitier Voir dessin cot CB-4 dernires pages Prot (mw) Bottom view 300 Vue de de N ue de dessous \ IN M = Os 1 \ I NN oO 100 I N\ o aN Weight : Connection M is connected to case 50 100 150 lamb (9c) Masse 0,79 La connexion M est relie eu bottier ABSOLUTE RATINGS (LIMITING VALUES) T =+25 C (Unless otherwise stated) VALEURS LIMITES ABSOLUES DUTILISATION amb (Sauf indications contraires) Drain source voltage Tension drain source Vps 50 Vv Gate source voltage Tension grille source Ves ~ 50 v Gate drain voltage Tension grille drain Vep ~ 50 v Gate current Courant de grille IG 10 mA Power dissipation Ww Dissipation de puissance Prot 300 m Junction temperature + oc Temprature de jonction max LF 178 Storage temperature min T 65 c Temprature de stockage max stg + 200 C 75-47 1/3 THOMSON-CSF DMISION SEMICONDUCTEURS. Seseasen 7752N 3824 STATIC CHARACTERISTICS CARACTERISTIQUES STATIQUES Tamb = + 25C ( unless otherwise stated } ( sauf indication contraire } Test conditions Conditions de mesure min typ max Vv =-30V Vos =0 0,1 ] nA Total leakage gate current Courant de fuite total de grille Ves = -30V lass Vos = 0 0,1 | BA Tamb = 150 C Gate source breakdown voltage Vos = 0 Tension de claquage grille source | lg =1BA V(BR)GSS 50 Vv Vps = 15V Vgs = -8V 0,1 | nA Drain cut-off current = ! Courant rsiduel de drain Vps = 15V DSX Ves = -8V 0,1 vA Tamb = 150 C DYNAMIC CHARACTERISTICS ( for small signats ) CARACTERISTIQUES DYNAMIQUES On state drain source resistance | VGsS = 0 Rsistance drain source a Itat Ip =0 lds on 250 | Q passant f = 1 kHz . Ves =90 Input capacitance ; Vos = 15V Ci 6 pF C ae ss apacit dentre f = 1MHz Reverse transfer capacitance vas = 0 av Capacit de transfert inverse ; DS = 1 MHz C4255 3 pF 2/3 7762N 3824 STATIC CHARACTERISTICS CARACTERISTIQUES STATIQUES Ipsx (nA) 10-2 0 25 50 75 100 125 150 T, (C) ds (k) 10! 109 to"! 0 1 2 3 4 5 Ves (V) a3 777