MM
E
60
R2
90
P
Datasheet
Mar
.
20
16 Revision 1.1
MagnaC
hip Semicondu
ctor Ltd
.
1
Parameter
V
alue
Unit
V
DS
@
T
j,max
650
V
R
DS(on),max
0.29
Ω
V
TH
,typ
3
V
I
D
13
A
Q
g,typ
32
nC
Order Code
Marking
T
emp. Range
Package
Packing
RoHS Status
MM
E
60
R
290P
RH
60R290P
-55 ~ 150
℃
TO
-263
(D
2
P
AK)
Reel
Halogen Free
MM
E
60R
2
90
P
600V 0.29
Ω
N-channel MOSFET
Description
MM
E
60R
290P
is power M
OSFET usi
ng magnachip
’
s advanced
super junction te
chnology that
can
realize v
ery low on-resistance and gate
charge. It
will provide much high e
fficiency
by using
optimized char
ge coupling technolo
gy
. These u
ser friendly
devices give an adv
antage of Low EM
I to
designers as w
ell as low
switching loss.
Features
Low Pow
er Loss by High Speed Sw
itching
and
Low
On
-Resistance
100%
Av
alanche
T
es
ted
Green Packa
ge
–
Pb Free Plating, Hal
ogen Free
Key Parameters
Ordering Informatio
n
Applications
PFC Pow
er Supply Stages
Switching
Applications
Adapter
Motor Control
DC
–
DC Converters
G
D
S
Package & Internal
Circui
t
G
S
D
MM
E
60
R2
90
P
Datasheet
Mar
.
20
16 Revision 1.1
MagnaC
hip Semicondu
ctor Ltd
.
2
Parameter
Symbol
Rating
Unit
Note
Drain
–
Source vol
tage
V
DSS
600
V
Gate
–
Source vol
tage
V
GSS
±
30
V
Continuous drain
current
I
D
13
A
T
C
=25
℃
8.3
A
T
C
=100
℃
Pulsed drain cu
rrent
(1)
I
DM
39
A
Power dissi
pation
P
D
1
04
W
Single - pulse aval
anche energy
E
AS
284
mJ
MOSFE
T dv/dt rugged
ness
dv/dt
50
V/ns
Diode dv
/dt ruggedness
dv/dt
15
V/ns
Storage tempera
ture
T
stg
-55 ~150
℃
Maximum operatin
g junction
temperature
T
j
150
℃
1)
Pulse width t
P
limited by T
j,m
ax
2)
I
SD
≤
I
D
, V
DS peak
≤
V
(BR)DSS
Parameter
Symbol
V
alue
Unit
Thermal resistance,
junction-case max
R
thjc
1.2
℃
/W
Thermal resistanc
e, junction-ambient max
R
thja
62.5
℃
/W
Thermal Character
istics
Absolute Maximum
Rating (T
c
=25
℃
unless oth
erwise specified)
MM
E
60
R2
90
P
Datasheet
Mar
.
20
16 Revision 1.1
MagnaC
hip Semicondu
ctor Ltd
.
3
Parameter
Symbol
Min.
T
yp.
Max.
Unit
T
est Condition
Drain
–
Source
Breakdow
n voltage
V
(BR)D
SS
600
-
-
V
V
GS
= 0V
,
I
D
=0.25mA
Gate
Threshold V
oltage
V
GS
(th)
2
3
4
V
V
DS
= V
GS,
I
D
=0.25mA
Zero Gate V
oltage
Drain Current
I
D
SS
-
-
1
μ
A
V
DS
= 600V
,
V
GS
= 0V
Gate Leakage
Current
I
GSS
-
-
100
nA
V
GS
=
±3
0V
,
V
DS
=0V
Drain-Source On
State Resistance
R
DS(ON)
-
0.26
0.
29
Ω
V
GS
= 10V
, I
D
=
6.0
A
Parameter
Symbol
Min.
T
yp.
Max.
Unit
T
est Condition
Input Capacitance
C
iss
-
1001
-
pF
V
DS
= 25V
, V
GS
= 0V
,
f = 1.0MHz
Output Capacitance
C
oss
-
750
-
Reverse
T
ransfer Capacitance
C
rss
-
45
-
Effectiv
e Output Capaci
tance
Energy Related
(3)
C
o(er)
-
29
-
V
DS
= 0V to 480V
,
V
GS
= 0V
,f = 1.0M
Hz
T
urn On
Delay
T
ime
t
d(on)
-
20
-
ns
V
GS
= 10V
, R
G
= 25Ω,
V
DS
= 300V
, I
D
=
13
A
Rise
T
ime
t
r
-
45
-
T
urn Of
f
Delay
T
ime
t
d(off)
-
90
-
Fall
T
ime
t
f
-
33
-
T
o
tal Gate Charge
Q
g
-
32
-
nC
V
GS
= 10V
, V
DS
= 480V
,
I
D
=
13
A
Gate
–
Source Cha
rge
Q
gs
-
8
-
Gate
–
Drain Char
ge
Q
gd
-
1
1.5
-
Gate Resistance
R
G
-
3.4
-
Ω
V
GS
= 0V
, f = 1.0M
Hz
3) C
o(er)
is a capacitance that gives the same stored energy as C
OSS
while V
DS
is
rising from 0V to 80% V
(BR)DSS
Static Characterist
ics (T
c
=25
℃
unless
otherwise specified
)
Dynamic Characteri
stics (T
c
=25
℃
unle
ss otherwise specif
ied)
MM
E
60
R2
90
P
Datasheet
Mar
.
20
16 Revision 1.1
MagnaC
hip Semicondu
ctor Ltd
.
4
Parameter
Symbol
Min.
T
yp.
Max.
Unit
T
est Condition
Continuous Diod
e Forward
Current
I
SD
-
-
13
A
Diode Forw
ard Voltage
V
SD
-
-
1.4
V
I
SD
=
13
A, VGS = 0 V
Reverse Recov
ery Time
t
rr
-
353
-
ns
I
SD
=
13
A
di/dt = 100 A/μs
V
DD
= 100 V
Reverse Recov
ery Charge
Q
rr
-
4.
6
-
μ
C
Reverse Recov
ery Current
I
rrm
-
26
-
A
Reverse Diode Ch
aracteristics (T
c
=25
℃
unless otherw
ise specified)
MM
E
60
R2
90
P
Datasheet
Mar
.
20
16 Revision 1.1
MagnaC
hip Semicondu
ctor Ltd
.
5
Characteristic Gra
ph
MM
E
60
R2
90
P
Datasheet
Mar
.
20
16 Revision 1.1
MagnaC
hip Semicondu
ctor Ltd
.
6
MM
E
60
R2
90
P
Datasheet
Mar
.
20
16 Revision 1.1
MagnaC
hip Semicondu
ctor Ltd
.
7
MM
E
60
R2
90
P
Datasheet
Mar
.
20
16 Revision 1.1
MagnaC
hip Semicondu
ctor Ltd
.
8
T
est Circuit
V
DS
10V
1mA
DUT
100K
Ω
10V
Same type as DUT
+
-
V
DD
DUT
+
-
Same type as DUT
V
DS
+
-
I
S
R
g
10K
Ω
V
gs
±
15V
L
I
F
V
DD
DUT
+
-
I
D
V
DS
V
gs
t
p
R
L
V
DD
DUT
+
-
I
AS
V
DS
R
g
V
gs
t
p
L
10V
V
GS
Charge
Q
g
Q
gs
Q
gd
V
DS
V
GS
90%
10%
T
d(on)
t
r
t
on
T
d(off)
t
f
t
off
V
DD
t
p
t
AV
V
DS(t)
BV
DSS
I
AS
Rds(on) * I
AS
t
rr
t
a
t
b
I
FM
I
RM
d
i
/d
t
0.25 I
RM
0.75 I
RM
0.5 I
RM
V
R
V
RM(REC)
Fig15-1. Gate charge measurement circuit
Fig15-2. Gate charge waveform
Fig16-1. Diode reverse recovery test circuit
Fig16-1. Diode reverse recovery test waveform
Fig17-1. Switching time test circuit for resistive load
Fig17-2. Switching time waveform
Fig18-1. Unclamped inductive load test circuit
Fig18-2. Unclamped inductive waveform
R
g
25
Ω
MM
E
60
R2
90
P
Datasheet
Mar
.
20
16 Revision 1.1
MagnaC
hip Semicondu
ctor Ltd
.
9
Physical Dimension
TO
-263 (D
2
P
AK)
Dimensions are in mil
limeters, unless ot
herwise specified
MM
E
60
R2
90
P
Datasheet
Mar
.
20
16 Revision 1.1
MagnaC
hip Semicondu
ctor Ltd
.
10
DISCLAIMER:
The
Products
are
not
designed
for
use
in
hostile
environments,
including,
without
limitation,
aircraft,
nuclear
pow
er
generation,
medical
appliances,
and
devices
or
systems
in
which
malfunction
of
any
Product
ca
n
reasonably
be
expected
to
result
in
a
personal
injury.
Se
ller’s
customers
using
or
selling
Seller’s
p
roducts
for
use
in
such
applications do so at their own risk and agree to fully defend and indemnify
Seller.
MagnaC
hip
reserv
es
the right
to
change the
specification
s
and circuitry without
notice at
any time.
Ma
gnaChip does
not c
on
sider
respo
nsibility
for
use
o
f
any
circui
try
other
than
circuitry
entirely
included
in
a
MagnaChip
product.
is
a
registered
trademark
of
MagnaChip
Semiconductor
Ltd.
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