TCK2292xG, TCK2297xG TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic TCK2292xG, TCK2297xG 2A, 25m Load Switch IC with Slew Rate Control Driver The TCK2292xG and TCK2297xG are load switch ICs for power management with slew rate control driver featuring wide input voltage operation from 1.1 to 5.5 V. Switch ON resistance is only 25 m typical at 5.0 V, -0.5 A load condition and these feature a slew rate control driver. TCK2292xG has output auto-discharge function. Output current type is available on 2 A. This device is available in 0.4 mm pitch ultra small package WCSP6E (0.8 mm x 1.2 mm, t: 0.59 mm (max)) .Thus this devices is ideal for portable applications that require high-density board assembly such as cellular phone. Feature * Wide input voltage operation: VIN = 1.1 to 5.5 V * Low ON resistance: WCSP6E Weight: 1 mg (typ.) RON = 25 m (typ.) at VIN = 5.0 V, IOUT = -0.5 A RON = 31 m (typ.) at VIN = 3.3 V, IOUT = -0.5 A RON = 52 m (typ.) at VIN = 1.8 V, IOUT = -0.5 A RON = 104 m (typ.) at VIN = 1.2 V, IOUT = -0.5 A * Low Quiescent Current: IQ = 0.1 A (typ.) at IOUT = 0 mA(TCK22921G, TCK22971G) * Slew Rate Control circuit * Output auto-discharge (Option) * Reverse current blocking * Pull down connection between Control and GND(Option) * Ultra small package: WCSP6E (0.8mm x 1.2mm, t: 0.59mm(max)) Start of commercial production 2016-06 1 2016-05-23 TCK2292xG, TCK2297xG Function Table Function Part number Device Marking Rise time @VIN=5V Reverse current blocking (SW OFF state) Output auto-discharge Control pin polarity Control pin connection TCK22921G 4.5 s Built in Built in Active High Pull down 1R TCK22922G 666 s Built in Built in Active High Pull down 2R TCK22923G 1364 s Built in Built in Active High Pull down 3R TCK22925G 3380 s Built in Built in Active High Pull down 4R TCK22971G 4.5 s Built in N/A Active High Pull down 5R TCK22972G 666 s Built in N/A Active High Pull down 6R TCK22973G 1364 s Built in N/A Active High Pull down 7R TCK22974G 3380 s Built in N/A Active High Pull down 8R TCK22975G 666 s Built in N/A Active Low Open 9R 2 2016-05-23 TCK2292xG, TCK2297xG Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Input voltage VIN -0.3 to 6.0 V Control voltage VCT -0.3 to 6.0 V Output voltage VOUT -0.3 to 6.0 V Output current IOUT 2.0 A 3.0 (Note1) A DC Pulse Power dissipation PD Operating temperature range Topr -40 to 85 C Tj 150 C Tstg -55 to 150 C Junction temeperature Storage temperature 800 (Note 2) mW Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note1: 100 s pulse, 2% duty cycle Note2: Rating at mounting on a board Board material: Glass epoxy (FR4) Board dimension: 40mm x 40mm (both sides of board), t=1.6mm Metal pattern ratio: a surface approximately 50%, the reverse side approximately 50% Through hole: diameter 0.5mm x 28 Operating conditions Characteristics Symbol Input voltage Condition Min Max Unit 1.1 5.5 V VIN Output voltage VOUT VIN V Output current IOUT 1.4V < VIN 2.0 A Control High-level input voltage VIH Control Low-level input voltage VIL 1.2V < VIN 5.5 V 1.0 1.1V VIN 1.2 V 0.9 0.4 Pin Assignment(Top view) A 2 1 B V V Top marking Lot trace code C A1: VOUT B1: VOUT C1: GND A2: VIN B2: VIN C2: Control Device Marking Index 3 2016-05-23 TCK2292xG, TCK2297xG Block Diagram * Control * *:Option Operation logic table Control "High" Control "Low" TCK22921G TCK22922G TCK22923G TCK22925G TCK22971G TCK22972G TCK22973G TCK22974G Output Q1 Discharge Q2 ON OFF ON OFF Reverse current blocking Inactive Inactive Active Output Q1 Discharge Q2 OFF ON OFF ON Reverse current blocking Active Active Inactive 4 TCK22975G 2016-05-23 TCK2292xG, TCK2297xG Electrical Characteristics DC Characteristics (Ta = -40 to 85C) Ta = 25C Characteristics Symbol Quiescent current ( ON state) IQ Quiescent current ( ON state) IQ Ta = -40 to 85C Test Condition IOUT = 0 mA (Note 3) IOUT = 0 mA Unit Min Typ. Max Min Max VIN = 1.8 V 0.1 A VIN = 3.3 V 0.1 A VIN = 5.5 V 0.1 0.5 A VIN = 1.8 V 1.2 A VIN = 3.3 V 1.3 A VIN = 5.5 V 1.4 2.5 A Quiescent current ( OFF state) IQ(OFF) VIN = 5.5 V, VOUT = OPEN, (Note 4) 0.07 0.4 A Switch leakage current( OFF state) ISD(OFF) VIN = 5.5 V, VOUT = GND, current through from VIN to VOUT. (Note 5) 0.02 2 A VOUT = 5.0 V, VIN = 0 V 0.01 2 A VIN = 5.0 V 25 43 VIN = 3.3 V 31 53 VIN = 1.8 V 52 83 VIN = 1.2 V 104 185 VIN = 1.1 V 136 100 Reverse blocking current On resistance Output discharge on resistance IRB RON RSD IOUT = -0.5A (Note 6) Note 3: Only applies to the TCK22921G and TCK22971G Note 4: Except OFF-state switch current Note 5: Only applies to the TCK22971G, TCK22972G, TCK22973G, TCK22974G and TCK22975G Note 6: Only applies to the TCK22921G, TCK22922G, TCK22923G, and TCK22925G 5 2016-05-23 m TCK2292xG, TCK2297xG AC Characteristics (Ta = 25C) VIN = 5.0 V Characteristics Symbol Test Condition(Figure 1) TCK22921G TCK22971G Min Typ. Max 4.5 666 Unit TCK22922G TCK22972G VOUT rise time tr RL=5 , CL=1.0F TCK22975G s TCK22923G TCK22973G TCK22925G TCK22974G VOUT fall time tf RL=5 , CL=1.0F TCK22921G TCK22971G 1364 3380 10 3 380 s TCK22922G TCK22972G Turn on delay tON RL=5 , CL=1.0F TCK22975G s TCK22923G TCK22973G TCK22925G TCK22974G Turn off delay tOFF RL=5 , CL=1.0F 750 2000 10 AC Waveform tr VOUT tf 90% 10% VIH VCT 50% 50% VIL 90% 10% 90% VOUT 10% tOFF tON Figure 1 VOH VOL tr, tf, tON, tOFF Waveforms(Active High) VIH VCT 50% 50% VIL tr VOUT tf 90% 10% 90% VOUT 10% Figure 2 90% 10% tON tOFF VOH VOL tr, tf, tON, tOFF Waveforms(Active Low) 6 2016-05-23 s TCK2292xG, TCK2297xG Application Note 1. Application circuit example (top view) The figure below shows the recommended configuration Control GND VIN LOAD VOUT CIN CL RL Control Voltage Output Voltage HIGH ON LOW OFF OPEN OFF 1) Input and Output capacitor An input capacitor (CIN) and an output capacitor (COUT) are highly recommended for the stable operation. And it is effective to reduce voltage overshoot or undershoot due to sharp changes in output current and also for improved stability of the power supply. When used, place CIN and COUT more than 1.0F as close to VIN pin to improve stability of the power supply. 2) Control pin The Control pin controls both the pass-through p-ch MOSFET and the discharge n-ch MOSFET (only for TCK2292xG), operated by the control voltage and Schmitt trigger. Also, pull down resistance equivalent to a few M is connected between Control and GND, thus the load switch IC is in OFF state even when Control pin is OPEN. (except TCK22975G). Products that Control pin is an open connection, please use be sure to fix the potential of the Control pin to High or Low. 2. Reverse current blocking This device has a built-in Reverse current blocking (SW OFF state) circuit to block reverse current from VOUT to VIN when output n-ch MOSEFT turned off and input voltage is 0V. 3. Instructions and directions for use This device has a built-in several functions, but these does not assure for the suppression of uprising device operation. In use of these products, please read through and understand dissipation idea for absolute maximum ratings from the above mention or our `Semiconductor Reliability Handbook'. Then use these products under absolute maximum ratings in any condition. Furthermore, Toshiba recommend inserting failsafe system into the design. 7 2016-05-23 TCK2292xG, TCK2297xG 4. Power Dissipation Power dissipation is measured on the board condition shown below. [The Board Condition] Board material: Glass epoxy (FR4) Board dimension: 40mm x 40mm (both sides of board)t=1.6mm Metal pattern ratio: a surface approximately 50%, the reverse side approximately 50% Through hole: diameter 0.5mm x 28 PD - Ta Power Dissipation PD (mW) 1000 800 600 400 200 0 -40 0 40 80 Ambient Temperature Ta () 120 Please allow sufficient margin when designing a board pattern to fit the expected power dissipation. Also take into consideration the ambient temperature, input voltage, output current etc. and applying the appropriate derating for allowable power dissipation during operation. 8 2016-05-23 TCK2292xG, TCK2297xG Package dimension Unit: mm Weight: 1 mg (typ.) 9 2016-05-23 TCK2292xG, TCK2297xG Land pattern dimensions (for reference only) Unit: mm 10 2016-05-23 TCK2292xG, TCK2297xG RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. * Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. 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