TCK2292xG, TCK2297xG
2016-05-23
1
TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic
TCK2292xG, TCK2297xG
2A, 25mΩ Load Switch IC with Slew Rate Control Driver
The TCK2292xG and TCK2297xG are load switch ICs for power management with slew rate control driver featuring
wide input voltage operation from 1.1 to 5.5 V. Switch ON
resistance is only 25 mΩ typical at 5.0 V, -0.5 A load condition
and these feature a slew rate control driver. TCK2292xG has
output auto-discharge function. Output current type is available
on 2 A.
This device is available in 0.4 mm pitch ultra small package
WCSP6E (0.8 mm x 1.2 mm, t: 0.59 mm (max)) .Thus this
devices is ideal for portable applications that require high-density
board assembly such as cellular phone.
Feature
• Wide input voltage operation: VIN = 1.1 to 5.5 V
• Low ON resistance:
RON = 25 mΩ (typ.) at VIN = 5.0 V, IOUT = -0.5 A
RON = 31 mΩ (typ.) at VIN = 3.3 V, IOUT = -0.5 A
RON = 52 mΩ (typ.) at VIN = 1.8 V, IOUT = -0.5 A
RON = 104 mΩ (typ.) at VIN = 1.2 V, IOUT = -0.5 A
• Low Quiescent Current: IQ = 0.1 μA (typ.) at IOUT = 0 mA(TCK22921G, TCK22971G)
• Slew Rate Control circuit
• Output auto-discharge (Option)
• Reverse current blocking
• Pull down connection between Control and GND(Option)
• Ultra small package: WCSP6E (0.8mm x 1.2mm, t: 0.59mm(max))
WCSP6E
Weight: 1 mg (typ.)
Start of commercial production
2016-0
6
TCK2292xG, TCK2297xG
2016-05-23
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Function Table
Part number
Function
Device
Marking
Rise time
@VIN=5V
Reverse current
blocking
(SW OFF state)
Output
auto-discharge Control pin polarity Control pin
connection
TCK22921G 4.5 μs Built in Built in Active High Pull down 1R
TCK22922G 666 μs Built in Built in Active High Pull down 2R
TCK22923G 1364 μs Built in Built in Active High Pull down 3R
TCK22925G 3380 μs Built in Built in Active High Pull down 4R
TCK22971G 4.5 μs Built in N/A Active High Pull down 5R
TCK22972G 666 μs Built in N/A Active High Pull down 6R
TCK22973G 1364 μs Built in N/A Active High Pull down 7R
TCK22974G 3380 μs Built in N/A Active High Pull down 8R
TCK22975G 666 μs Built in N/A Active Low Open 9R
TCK2292xG, TCK2297xG
2016-05-23
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Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Input voltage VIN -0.3 to 6.0 V
Control voltage VCT -0.3 to 6.0 V
Output voltage VOUT -0.3 to 6.0 V
Output current IOUT
DC 2.0 A
Pulse 3.0 (Note1) A
Power dissipation PD
800 (Note 2) mW
Operating temperature range Topr -40 to 85 °C
Junction temeperature Tj 150 °C
Storage temperature Tstg -55 to 150 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if
the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Note1: 100 μs pulse, 2% duty cycle
Note2: Rating at mounting on a board
Board material: Glass epoxy (FR4)
Board dimension: 40mm x 40mm (both sides of board), t=1.6mm
Metal pattern ratio: a surface approximately 50%, the reverse side approximately 50%
Through hole: diameter 0.5mm x 28
Operating conditions
Characteristics Symbol Condition Min Max Unit
Input voltage VIN ― 1.1 5.5 V
Output voltage VOUT ― VIN V
Output current IOUT 1.4V < VIN 2.0 A
Control High-level input voltage VIH
1.2V < VIN ≤ 5.5 V 1.0 ―
V
1.1V ≤ VIN ≤1.2 V 0.9 ―
Control Low-level input voltage VIL ― 0.4 V
Pin Assignment(Top view) Top marking
Index
OUT
B1: VOUT
C1: GND
A2: VIN
B2: VIN
C2: Control
1
2
A
B
C
Lot trace code
Device Marking
TCK2292xG, TCK2297xG
2016-05-23
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Block Diagram
Operation logic table
TCK22921G
TCK22922G
TCK22923G
TCK22925G
TCK22971G
TCK22972G
TCK22973G
TCK22974G
TCK22975G
Control
“High”
Output Q
1
ON
ON
OFF
Discharge Q2
OFF
―
―
Reverse current blocking
Inactive
Inactive
Active
Control
“Low”
Output Q1
OFF
OFF
ON
Discharge Q
2
ON
―
―
Reverse current blocking
Active
Active
Inactive
*:Option
*
*
Control
TCK2292xG, TCK2297xG
2016-05-23
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Electrical Characteristics
DC Characteristics (Ta = -40 to 85°C)
Characteristics Symbol Test Condition
Ta = 25°C Ta = -40 to 85°C
Unit
Min Typ. Max Min Max
Quiescent current ( ON state) IQ IOUT = 0 mA
(Note 3)
VIN = 1.8 V ― 0.1 ― ― ― μA
VIN = 3.3 V ― 0.1 ― ― ― μA
VIN = 5.5 V ― 0.1 ― ― 0.5 μA
Quiescent current ( ON state) IQ IOUT = 0 mA
VIN = 1.8 V ― 1.2 ― ― ― μA
VIN = 3.3 V ― 1.3 ― ― ― μA
VIN = 5.5 V ― 1.4 ― ― 2.5 μA
Quiescent current ( OFF state) IQ(OFF) VIN = 5.5 V, VOUT = OPEN,
(Note 4) ― 0.07 ― ― 0.4 μA
Switch leakage current( OFF state) ISD(OFF)
VIN = 5.5 V, VOUT = GND, current
through from VIN to VOUT.
(Note 5)
― 0.02 ― ― 2 μA
Reverse blocking current IRB VOUT = 5.0 V,
VIN = 0 V ― 0.01 ― ― 2 μA
On resistance RON IOUT = -0.5A
VIN = 5.0 V ― 25 ― ― 43
mΩ
VIN = 3.3 V ― 31 ― ― 53
VIN = 1.8 V ― 52 ― ― 83
VIN = 1.2 V ― 104 ― ― 185
VIN = 1.1 V ― 136 ― ― ―
Output discharge on resistance RSD ― (Note 6) ― 100 ― ― ― Ω
Note 3: Only applies to the TCK22921G and TCK22971G
Note 4: Except OFF-state switch current
Note 5: Only applies to the TCK22971G, TCK22972G, TCK22973G, TCK22974G and TCK22975G
Note 6: Only applies to the TCK22921G, TCK22922G, TCK22923G, and TCK22925G
TCK2292xG, TCK2297xG
2016-05-23
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AC Characteristics (Ta = 25°C)
VIN = 5.0 V
Characteristics Symbol Test Condition(Figure 1) Min Typ. Max Unit
VOUT rise time tr RL=5Ω , CL=1.0μF
TCK22921G
TCK22971G ― 4.5 ―
μs
TCK22922G
TCK22972G
TCK22975G
― 666 ―
TCK22923G
TCK22973G ― 1364 ―
TCK22925G
TCK22974G ― 3380 ―
VOUT fall time tf RL=5Ω , CL=1.0μF ― 10 ― μs
Turn on delay tON RL=5Ω , CL=1.0μF
TCK22921G
TCK22971G ― 3 ―
μs
TCK22922G
TCK22972G
TCK22975G
― 380 ―
TCK22923G
TCK22973G ― 750 ―
TCK22925G
TCK22974G ― 2000 ―
Turn off delay tOFF RL=5Ω , CL=1.0μF ― 10 ― μs
AC Waveform
Figure 1 tr, tf, tON, tOFF Waveforms(Active High)
VIH
VOUT
VCT
VOL
VOH
VIL
90%
tON
t
OFF
50%
50%
10%
tr
tf
V
OUT
10%
90%
90%
10%
Figure 2 tr, tf, tON, tOFF Waveforms(Active Low)
tr
tf
V
OUT
10%
90%
90%
10%
VIH
VOUT
VCT
VOL
VOH
VIL
90%
t
ON
tOFF
50%
50%
10%
TCK2292xG, TCK2297xG
2016-05-23
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Application Note
1. Application circuit example (top view)
The figure below shows the recommended configuration
1) Input and Output capacitor
An input capacitor (CIN) and an output capacitor (COUT) are highly recommended for the stable operation. And
it is effective to reduce voltage overshoot or undershoot due to sharp changes in output current and also for
improved stability of the power supply. When used, place CIN and COUT more than 1.0μF as close to VIN pin to
improve stability of the power supply.
2) Control pin
The Control pin controls both the pass-through p-ch MOSFET and the discharge n-ch MOSFET (only for
TCK2292xG), operated by the control voltage and Schmitt trigger. Also, pull down resistance equivalent to a few
MΩ is connected between Control and GND, thus the load switch IC is in OFF state even when Control pin is
OPEN. (except TCK22975G). Products that Control pin is an open connection, please use be sure to fix the
potential of the Control pin to High or Low.
2. Reverse current blocking
This device has a built-in Reverse current blocking (SW OFF state) circuit to block reverse current from VOUT to
VIN when output n-ch MOSEFT turned off and input voltage is 0V.
3. Instructions and directions for use
This device has a built-in several functions, but these does not assure for the suppression of uprising device
operation. In use of these products, please read through and understand dissipation idea for absolute maximum
ratings from the above mention or our ‘Semiconductor Reliability Handbook’. Then use these products under
absolute maximum ratings in any condition. Furthermore, Toshiba recommend inserting failsafe system into the
design.
Control
Voltage
Output
Voltage
HIGH
ON
LOW
OFF
OPEN
OFF
V
OUT
GND
VIN
Control
C
L
RL
LOAD
C
IN
TCK2292xG, TCK2297xG
2016-05-23
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4. Power Dissipation
Power dissipation is measured on the board condition shown below.
[The Board Condition]
Board material: Glass epoxy (FR4)
Board dimension: 40mm x 40mm (both sides of board)，t=1.6mm
Metal pattern ratio: a surface approximately 50%, the reverse side approximately 50%
Through hole: diameter 0.5mm x 28
Please allow sufficient margin when designing a board pattern to fit the expected power dissipation. Also take into
consideration the ambient temperature, input voltage, output current etc. and applying the appropriate derating for
allowable power dissipation during operation.
0
200
400
600
800
1000
-40 0 40 80 120
Power Dissipation PD(mW)
Ambient Temperature Ta (℃)
PD-Ta
TCK2292xG, TCK2297xG
2016-05-23
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Package dimension
Weight: 1 mg (typ.)
Unit: mm
TCK2292xG, TCK2297xG
2016-05-23
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Land pattern dimensions (for reference only)
Unit: mm
TCK2292xG, TCK2297xG
2016-05-23
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