A D V A N C E D S E M I C O N D U C T O R, I N C. REV. A
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specif i cations are subj ect to change wi thout notice.
CHARACTERISTICS TC = 25 °C
SYMBOL TEST CONDITIONS MINI MUM TYPICAL MAXIMUM UNITS
ICBO VCB = 8 V 100 nA
IEBO VEB = 1.0 V 1.0 µ
µµ
µA
hFE VCE = 8.0 V IC = 7.0 mA 50 250 ---
CCB VCB = 10 V 0.6 pF
ftVCE = 10 V IC = 20 mA f = 1.0 GHz 8.0 8.5 GHz
S21E2VCE = 8 V IC = 20 mA f = 2.0 GHz 10 11 dB
NF
GA VCE = 8 V IC = 10 mA f = 2.0 GHz 10 1.6
11 2.5 dB
NPN SILICON LOW NOISE RF TRANSISTOR
NE64535
DESCRIPTION:
The ASI NE64535 is a Common
Emitter Device Designed for Low Noise
Class A Amplif ier Applications up to 4.0
GHz.
FEATURES INCLUDE:
• NF = 1.6 dB Typical @ 2 GHz
•
S21E
2 = 11 dB Typical @ 2 GHz
• Hermetic Ceramic Package
MAXIMUM RATINGS:
IC60 mA
VCBO 25 V
VCEO 12 V
VEBO 1.5 V
PDISS 300 mW @ T A ≤ 75 OC
TJ-65 °C to +200 °C
TSTG -65 °C to +150 °C
θ
θθ
θJC 85 °C/W
PACKAGE STYLE .085 4L SQ
1 = Collector 2 & 4 = Emitter 3 = Base
ORDER CODE: ASI10752
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE
•
NORTH HOLLYWOOD, CA 91605
•
(818) 982-1202
•
TELEX: 18-2651
•
FAX (818) 765-3004
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