DATA SH EET
Product specification
Supersedes data of 1997 Mar 12 1999 Jun 01
DISCRETE SEMICONDUCTORS
BC817
NPN general purpose transistor
b
ook, halfpage
M3D088
1999 Jun 01 2
Philips Semiconductors Product specification
NPN general purpose transistor BC817
FEATURES
High current (max. 500 mA)
Low voltage (max. 45 V).
APPLICATIONS
General purpose switching and amplification.
DESCRIPTION
NPN transistor in a SOT23 plastic package.
PNP complement: BC807.
MARKING
Note
1. = p : Made in Hong Kong.
= t : Made in Malaysia.
TYPE
NUMBER MARKING
CODE(1) TYPE
NUMBER MARKING
CODE(1)
BC817 6DBC817-25 6B
BC817-16 6ABC817-40 6C
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
21
3
MAM255
Top view
2
3
1
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter 50 V
VCEO collector-emitter voltage open base; IC=10mA 45 V
VEBO emitter-base voltage open collector 5V
I
Ccollector current (DC) 500 mA
ICM peak collector current 1A
I
BM peak base current 200 mA
Ptot total power dissipation Tamb 25 °C; note 1 250 mW
Tstg storage temperature 65 +150 °C
Tjjunction temperature 150 °C
Tamb operating ambient temperature 65 +150 °C
1999 Jun 01 3
Philips Semiconductors Product specification
NPN general purpose transistor BC817
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tj=25°C unless otherwise specified.
Notes
1. Pulse test: tp300 µs; δ≤0.02.
2. VBE decreases by approx. 2 mV/K with increasing temperature.
SYMBOL PARAMETER CONDITIONS VALUE UNIT
Rth j-a thermal resistance from junction to ambient note 1 500 K/W
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
ICBO collector cut-off current IE= 0; VCB =20V −−100 nA
IE= 0; VCB = 20 V; Tj= 150 °C−−5µA
I
EBO emitter cut-off current IC= 0; VEB =5V −−100 nA
hFE DC current gain IC= 100 mA; VCE = 1 V; note 1;
see Figs 2, 3 and 4
BC817 100 600
BC817-16 100 250
BC817-25 160 400
BC817-40 250 600
hFE DC current gain IC= 500 mA; VCE = 1 V; note 1 40 −−
V
CEsat collector-emitter saturation voltage IC= 500 mA; IB= 50 mA; note 1 −−700 mV
VBE base-emitter voltage IC= 500 mA; VCE = 1 V; note 2 −−1.2 V
Cccollector capacitance IE=i
e= 0; VCB = 10 V; f = 1 MHz; 5pF
fTtransition frequency IC= 10 mA; VCE = 5 V; f = 100 MHz; 100 −−MHz
1999 Jun 01 4
Philips Semiconductors Product specification
NPN general purpose transistor BC817
Fig.2 DC current gain; typical values.
BC817-16.
handbook, full pagewidth
0
20
40
80
120
160
MBH721
1011
hFE
10 IC (mA)
102103
VCE = 1 V
Fig.3 DC current gain; typical values.
BC817-25.
handbook, full pagewidth
0
500
100
200
300
400
MBH720
1011
hFE
10 IC (mA)
102103
VCE = 1 V
1999 Jun 01 5
Philips Semiconductors Product specification
NPN general purpose transistor BC817
Fig.4 DC current gain; typical values.
BC817-40.
handbook, full pagewidth
0
500
100
200
300
400
MBH722
1011
hFE
10 IC (mA)
102103
VCE = 1 V
1999 Jun 01 6
Philips Semiconductors Product specification
NPN general purpose transistor BC817
PACKAGE OUTLINE
UNIT A1
max. bpcDE e1HELpQwv
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
97-02-28
IEC JEDEC EIAJ
mm 0.1 0.48
0.38 0.15
0.09 3.0
2.8 1.4
1.2 0.95
e
1.9 2.5
2.1 0.55
0.45 0.1
0.2
DIMENSIONS (mm are the original dimensions)
0.45
0.15
SOT23
bp
D
e1
e
A
A1
Lp
Q
detail X
HE
E
wM
vMA
B
AB
0 1 2 mm
scale
A
1.1
0.9
c
X
12
3
Plastic surface mounted package; 3 leads SOT23
1999 Jun 01 7
Philips Semiconductors Product specification
NPN general purpose transistor BC817
DEFINITIONS
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
Data Sheet Status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
© Philips Electronics N.V. SCA
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Internet: http://www.semiconductors.philips.com
1999 65
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Printed in The Netherlands 15002/03/pp8 Date of release: 1999 Jun 01 Document order number: 9397 750 05955