Features
• Very High Power AlGaAs LED Technology
• 870nm Wavelength
• T-1¾ Package
• Low Cost
• Low Forward Voltage: 1.4V at 20mA
• High Speed: 15ns Rise Times
Applications
• Industrial IR Equipments
• IR Portable Instruments
• Consumer Electronics
(Optical mouse etc)
• High Speed IR Communications
(IR LANs, IR Modems, IR Dongles etc)
• IR Audio
• IR Telephones
Part Number Lead Form Shipping Option
HSDL-4261 Straight Bulk
Description
The HSDL-4261 Infrared emitter was designed for ap-
plications that require high power, low forward voltage
and high speed. It utilizes Aluminum Galium Arsenide
(AlGaAs) LED technology and is optimized for speed and
eciency at emission wavelengths of 870nm. The material
used produces high radiant eciency over a wide range
of currents. The emitter is packaged in clear T-1¾ (5mm)
package.
1.14 ± 0.2
5.8 ± 0.2
5.0 ± 0.2
31.6 min.
0.7 max.
8.7 ± 0.2
2.54
0.50 ± 0.1
CATHODE
FLAT
1.0 min.
HSDL - 4261
High-Power T-1¾ (5mm) AlGaAs Infrared (870nm) Lamp
Data Sheet
2
Absolute Maximum Ratings at 25°C
Electrical Characteristics at 25°C
Optical Characteristics at 25°C
Notes:
1. Derate as shown in Figure 6.
Parameter Symbol Min. Typ. Max. Unit Condition Reference
Forward Voltage VF- 1.4
1.7
1.5
1.9
V IFDC=20mA
IFDC=100mA
Fig. 2
Fig. 3
Forward VoltageTemperature
Coecient
DV/DT - -1.5
-1.3
- mV/°C IFDC=20mA
IFDC=100mA
Fig. 4
Series Resistance RS- 4.1 - Ohms IFDC=100mA
Diode Capacitance CO- 80 - pF 0V, 1MHz
Reverse Voltage VR3 14 - V IR=100uA
Thermal Resistance, Junction to
Ambient
Rqja - 280 - °C/W
Parameter Symbol Min. Typ. Max. Unit Condition Reference
Radiant Optical Power PO- 9
45
- mW IFDC=20mA
IFDC=100mA
Radiant On-Axis Intensity IE- 36
180
- mW/Sr IFDC=20mA
IFDC=100mA
Fig. 5
Radiant On-Axis Intensity
Temperature Coecient
DIE/DT - -0.22 - %/°C IFDC=100mA
Viewing Angle 2q1/2 - 26 - deg IFDC=20mA Fig. 7
Peak wavelength lPK - 870 - nm IFDC=20mA Fig. 1
Peak wavelengthTemperature
Coecient
Dl/DT - 0.18 - nm/°C IFDC=20mA
Spectral Width Dl - 47
52
- nm IFDC=20mA
IFDC=100mA
Fig. 1
Optical Rise and Fall Time tr/tf- 15 - ns IFPK=500mA
Duty Factor=33%
Pulse Width=125ns
Bandwidth fc- 23 - MHz
Parameter Symbol Min. Max Unit Reference
DC Forward Current IFDC - 100 mA [1], Fig. 2
Power Dissipation PDISS - 190 mW
Reverse Voltage VR5 - V
Operating Temperature TO-40 70 °C
Storage Temperature TS-40 100 °C
LED Junction Temperature TJ- 110 °C
Lead Soldering Temperature - 260 for 5 sec °C
3
Figure 1. Relative Radiant Intensity vs. Wavelength Figure 2. DC Forward Current vs. Forward Voltage
Figure 3. Peak Forward Current vs. Forward Voltage Figure 4. Forward Voltage vs. Ambient Temperature
Figure 5. Relative Radiant Intensity vs. DC Forward Current Figure 6. DC Forward Current vs. Ambient Temperature
Derated Based on TJMAX=1100C
0.0
1.0
2.0
3.0
4.0
5.0
0 20 40 60 80 100
DC Forward Current, I
FDC
(mA)
Relative Radiant Intensity
(Normalized at 20mA)
T
A
= 25˚C
1
10
100
1000
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Forward Voltage, V
F
(V)
Peak Forward Current, I
FPK
(mA)
T
A
= 25˚C
0
20
40
60
80
100
0 10 20 30 40 50 60 70
Ambient Temperature, TA (˚C)
DC Forward Current, IFDC (mA)
RJA = 400˚C/W
RJA = 500˚C/W
RJA = 300˚C/W
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Forward Voltage, V
F
(V)
Forward Current, I
FDC
(mA)
T
A
= 25˚C
1.0
1.2
1.4
1.6
1.8
2.0
-40 -25 0 25 50 70 85 100
I
FDC
=20mA
I
FDC
=100mA
Ambient Temperature (
o
C)
Forward Voltage, V
F
(V)
0
0.2
0.4
0.6
0.8
1
1.2
750 780 810 840 870 900 930
Wavelength (nm)
Relative Radiant Intensity
Peak Wavelength at
IFDC = 20mA, TA=25oC
Figure 7. Radiant Intensity vs. Angular Displacement
For product information and a complete list of distributors, please go to our web site: www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Pte. in the United States and other countries.
Data subject to change. Copyright © 2006 Avago Technologies Pte. All rights reserved.
5989-1534EN - April 11, 2006