IDT™ / ICS™ LVCMOS/LVTTL FANOUT BUFFER 3 ICS83905AM REV. B JULY 9, 2007
ICS83905
LOW SKEW, 1:6 CRYSTAL-TO-LVCMOS/LVTTL FANOUT BUFFER
TABLE 4A. POWER SUPPLY DC CHARACTERISTICS, VDD = VDDO = 3.3V±5%, TA = 0°C TO 70°C
lobmySretemaraPsnoitidnoCtseTmuminiMlacipyTmumixaMstinU
V
DD
egatloVylppuSeroC 531.33.3564.3V
V
ODD
egatloVylppuStuptuO 531.33.3564.3V
I
DD
tnerruCylppuSrewoP00=2:1ELBANE01Am
I
ODD
tnerruCylppuStuptuO00=2:1ELBANE5Am
TABLE 4B. POWER SUPPLY DC CHARACTERISTICS, VDD = VDDO = 2.5V±5%, TA = 0°C TO 70°C
lobmySretemaraPsnoitidnoCtseTmuminiMlacipyTmumixaMstinU
V
DD
egatloVylppuSeroC 573.25.2526.2V
V
ODD
egatloVylppuStuptuO 573.25.2526.2V
I
DD
tnerruCylppuSrewoP00=2:1ELBANE8Am
I
ODD
tnerruCylppuStuptuO00=2:1ELBANE4Am
TABLE 4C. POWER SUPPLY DC CHARACTERISTICS, VDD = VDDO = 1.8V±0.2V, TA = 0°C TO 70°C
lobmySretemaraPsnoitidnoCtseTmuminiMlacipyTmumixaMstinU
V
DD
egatloVylppuSeroC 6.18.10.2V
V
ODD
egatloVylppuStuptuO 6.18.10.2V
I
DD
tnerruCylppuSrewoP00=2:1ELBANE5Am
I
ODD
tnerruCylppuStuptuO00=2:1ELBANE3Am
ABSOLUTE MAXIMUM RATINGS
Supply Voltage, V
DD 4.6V
Inputs, VI-0.5V to VDD + 0.5 V
Outputs, V
O-0.5V to VDDO + 0.5V
Package Thermal Impedance, θ
JA
16 Lead SOIC package 78.8°C/W (0 mps)
16 Lead TSSOP package 89°C/W (0 lfpm)
20 Lead VFQFN package 60.4°C/W (0 mps)
Storage Temperature, T
STG -65°C to 150°C
NOTE: Stresses beyond those listed under Absolute
Maximum Ratings may cause permanent damage to the
device. These ratings are stress specifications only. Functional op-
eration of product at these conditions or any conditions beyond
those listed in the DC Characteristics or AC Characteristics is not
implied. Exposure to absolute maximum rating conditions for ex-
tended periods may affect product reliability.
TABLE 4D. POWER SUPPLY DC CHARACTERISTICS, VDD = 3.3V±5%, VDDO = 2.5V±5%, TA = 0°C TO 70°C
lobmySretemaraPsnoitidnoCtseTmuminiMlacipyTmumixaMstinU
V
DD
egatloVylppuSeroC 531.33.3564.3V
V
ODD
egatloVylppuStuptuO 573.25.2526.2V
I
DD
tnerruCylppuSrewoP00=2:1ELBANE01Am
I
ODD
tnerruCylppuStuptuO00=2:1ELBANE4Am