SIEMENS BCR 158W PNP Silicon Digital Transistor Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor (Ry=2.2kQ, Ro=47kQ) VS005561 Type Marking |Ordering Code | Pin Configuration Package BCR 158W Wis UPON INQUIRY |1=B |2 =E |3 =C SOT-323 Maximum Ratings Parameter Symbol Values Unit Collector-emitter voltage VoEO 50 Vv Collector-base voltage Voso 50 Emitter-base voltage Veso 5 Input on Voitage Vicon) 10 DC collector current Io 100 mA Total power dissipation, Tg = 124C Prot 250 mW Junction temperature qj 150 C Storage temperature Tstg - 65... + 150 Therma! Resistance Junction ambient = Rind < 240 KW Junction - soldering point Rings <= 105 1) Package mounted on peb 40mm x 40mm x 1.5mm / 0.5em? Cu Semiconductor Group 679 11.96SIEMENS BOR 158W Electrical Characteristics at 7,=25C, unless otherwise specified Parameter Symbol Values Unit min. ityp. |max. DC Characteristics Collector-emitter breakdown voltage ViBRICEO Vv Ig = 100 PA, fp =0 50 - - Collector-base breakdown voltage ViBR)cBO Io = 10 pA, fp =O 50 - - Collector cutoff current IcBo nA Vop = 40 V, fe =0 - - 100 Emitter cutoff current lEBO pA Ven =5V, ic =0 - - 164 DC current gain Ore - Ilo=5MA, Vor =5V 70 - - Collector-emitter saturation voltage 1) VoEsat Vv Ico = 10 MA, fg =0.5 MA - - 0.3 Input off voltage Viott) lo = 100 WA, Vop = 5 V 0.4 - 0.8 Input on Voltage Vion) Igo =2 MA, Veg = 0.3 V 0.5 - 1.1 Input resistor Ay 15 2.2 2.9 kQ Resistor ratio Ry/Ro 0.042 0.047 0.052 - AC Characteristics Transition frequency fr MHz ig = 10 MA, Vog =5 V, f= 100 MHz - 200 - Collector-base capacitance Cob pF Vop = 10 V, f= 1 MHz - 3 - 1) Pulse test: t < 300s; D < 2% Semiconductor Group 680 11.96SIEMENS BCR 158W Dc Current Gain heg = f (Ic) Vcr = 5V (common emitter configuration) 103 fee 1 10! 10 10 10 we Io Input on Voltage Vion) = (/c) Vee = 0.3V (common emitter configuration) 102 101 10 10 10 10 pe Y, Hon), Semiconductor Group 681 Collector-Emitter Saturation Voltage Voeesat = Alc). Are = 20 102 10 0.0 01 02 0.3 Vv 0.8 m Veesat Input off voltage Vigotn = A/c) Vee = 5V (common emitter configuration) 410 10% 10 10 01 02 03 04 05 06 07 08 V Vion 1.0 11.96SIEMENS BCR 158W Total power dissipation P,. = f(T"; Ts) * Package mounted on epoxy mw P. ' 200 \ Th 150 \ 100 \ 7 50 9 \ Q 20 40 60 80 100 120 C 150 te TyTs Permissible Pulse Load Rinss = f(t) Permissible Pulse Load Protmax / Ptotoc = At) Prado HH HEH + wil dai LN! Hd rn \ t TINGE eit 40 Bust pil Ly Nn CoE iu Tt iain: ( LL nM LU ML 10 CCAS 10 oo" s 10 = 10% . Semiconductor Group 682 11.96