CM50DY-24H Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Dual IGBTMODTM H-Series Module 50 Amperes/1200 Volts A B C F K Q - DIA. (2 TYP.) E2 G2 F M J C2E1 E2 G1 E1 D C1 N R S - M5 THD (3 TYP.) Description: Powerex IGBTMODTM Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a half-bridge configuration with each transistor having a reverseconnected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. (3 TYP.) R R H .110 TAB H L P E G G2 E2 E2 C2E1 C1 E1 G1 Outline Drawing and Circuit Diagram Dimensions Inches Millimeters Dimensions Inches Millimeters A 3.70 94.0 K 0.67 17.0 B 3.1500.01 80.00.25 L 0.63 16.0 C 1.57 40.0 M 0.51 13.0 D 1.34 34.0 N 0.47 12.0 E 1.22 Max. 31.0 Max. P 0.28 7.0 F 0.90 23.0 Q 0.256 Dia. Dia. 6.5 G 0.85 21.5 R 0.16 4.0 H 0.79 20.0 S M5 Metric M5 J 0.71 18.0 Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery (135ns) Free-Wheel Diode High Frequency Operation (20-25kHz) Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control Motion/Servo Control UPS Welding Power Supplies Laser Power Supplies Ordering Information: Example: Select the complete part module number you desire from the table below -i.e. CM50DY-24H is a 1200V (VCES), 50 Ampere Dual IGBTMODTM Power Module. Type Current Rating Amperes VCES Volts (x 50) CM 50 24 253 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50DY-24H Dual IGBTMODTM H-Series Module 50 Amperes/1200 Volts Absolute Maximum Ratings, Tj = 25 C unless otherwise specified Ratings Symbol CM50DY-24H Units Junction Temperature Tj -40 to 150 C Storage Temperature Tstg -40 to 125 C Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts Gate-Emitter Voltage VGES 20 Volts IC 50 Amperes ICM 100* Amperes Collector Current Peak Collector Current Diode Forward Current IF 50 Amperes Diode Forward Surge Current IFM 100* Amperes Power Dissipation Pd 400 Watts - 17 in-lb Max. Mounting Torque M5 Terminal Screws Max. Mounting Torque M6 Mounting Screws - 26 in-lb Module Weight (Typical) - 190 Grams VRMS 2500 Volts V Isolation * Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating. Static Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Symbol Test Conditions Min. Typ. Max. Units Collector-Cutoff Current ICES VCE = VCES, VGE = 0V - - 1.0 mA Gate Leakage Current IGES VGE = VGES, VCE = 0V - - 0.5 A Gate-Emitter Threshold Voltage VGE(th) IC = 5mA, VCE = 10V 4.5 6.0 7.5 Volts Collector-Emitter Saturation Voltage VCE(sat) IC = 50A, VGE = 15V - 2.5 3.4** Volts IC = 50A, VGE = 15V, Tj = 150C - 2.25 - Volts Total Gate Charge QG VCC = 600V, IC = 50A, VGS = 15V - 250 - nC Diode Forward Voltage VFM IE = 50A, VGS = 0V - - 3.5 Volts Min. Typ. Max. Units - - 10 nF ** Pulse width and repetition rate should be such that device junction temperature rise is negligible. Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Symbol Input Capacitance Cies Output Capacitance Coes Reverse Transfer Capacitance Cres Resistive Turn-on Delay Time td(on) Load Rise Time Switching Turn-off Delay Time Times Fall Time Test Conditions VGE = 0V, VCE = 10V, f = 1MHz - - 3.5 nF - - 2 nF - - 80 ns tr VCC = 600V, IC = 50A, - - 200 ns td(off) VGE1 = VGE2 = 15V, RG = 6.3 - - 150 ns - - 350 ns tf Diode Reverse Recovery Time trr IE = 50A, diE/dt = -100A/s - - 250 ns Diode Reverse Recovery Charge Qrr IE = 50A, diE/dt = -100A/s - 0.37 - C Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified 254 Characteristics Symbol Test Conditions Min. Typ. Max. Units Thermal Resistance, Junction to Case Rth(j-c) Per IGBT - - 0.31 C/W Thermal Resistance, Junction to Case Rth(j-c) Per FWDi - - 0.70 C/W Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied - - 0.075 C/W Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM50DY-24H Dual IGBTMODTM H-Series Module 50 Amperes/1200 Volts 100 15 80 5 12 COLLECTOR CURRENT, IC, (AMPERES) VGE = 20V 11 60 10 40 9 20 7 VCE = 10V Tj = 25C Tj = 125C 80 60 40 20 8 0 0 0 2 4 6 8 0 10 4 8 12 16 4 3 2 1 0 20 0 60 80 100 102 Tj = 25C IC = 100A 6 IC = 50A 4 2 CAPACITANCE, Cies, Coes, Cres, (nF) EMITTER CURRENT, IE, (AMPERES) Tj = 25C 8 101 101 Cies Coes 100 IC = 20A VGE = 0V f = 1MHz 100 4 8 12 16 10-1 0 20 0.8 1.6 2.4 3.2 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) 103 103 REVERSE RECOVERY TIME, t rr, (ns) 102 td(on) VCC = 600V VGE = 15V RG = 6.3 Tj = 125C tr 101 COLLECTOR CURRENT, IC, (AMPERES) 102 Irr 102 100 di/dt = -100A/sec Tj = 25C 101 100 101 EMITTER CURRENT, IE, (AMPERES) 100 101 102 GATE CHARGE, VGE 101 t rr Cres COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) tf td(off) 10-1 4.0 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 10-1 102 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 0 101 100 40 CAPACITANCE VS. VCE (TYPICAL) 102 10 0 20 COLLECTOR-CURRENT, IC, (AMPERES) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) SWITCHING TIME, (ns) VGE = 15V Tj = 25C Tj = 125C GATE-EMITTER VOLTAGE, VGE, (VOLTS) COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) REVERSE RECOVERY CURRENT, Irr, (AMPERES) COLLECTOR CURRENT, IC, (AMPERES) Tj = 25oC COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 100 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) TRANSFER CHARACTERISTICS (TYPICAL) OUTPUT CHARACTERISTICS (TYPICAL) IC = 50A 16 VCC = 400V VCC = 600V 12 8 4 0 0 100 200 300 400 GATE CHARGE, QG, (nC) 255 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT) 10-2 10-1 100 Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.31C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 256 101 10-4 10-3 10-3 NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z th(j-c) Zth = Rth * (NORMALIZED VALUE) CM50DY-24H Dual IGBTMODTM H-Series Module 50 Amperes/1200 Volts 10-3 101 100 TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi) 10-2 10-1 100 101 Single Pulse TC = 25C Per Unit Base = R th(j-c) = 0.7C/W 10-1 10-1 10-2 10-2 10-3 10-5 TIME, (s) 10-4 10-3 10-3