253
Dual IGBTMOD™
H-Series Module
50 Amperes / 1200 Volts
CM50DY-24H
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Outline Drawing and Circuit Diagram
Dimensions Inches Millimeters
A 3.70 94.0
B 3.150±0.01 80.0±0.25
C 1.57 40.0
D 1.34 34.0
E 1.22 Max. 31.0 Max.
F 0.90 23.0
G 0.85 21.5
H 0.79 20.0
J 0.71 18.0
Dimensions Inches Millimeters
K 0.67 17.0
L 0.63 16.0
M 0.51 13.0
N 0.47 12.0
P 0.28 7.0
Q 0.256 Dia. Dia. 6.5
R 0.16 4.0
S M5 Metric M5
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a
half-bridge configuration with each
transistor having a reverse-
connected super-fast recover y
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offer ing simplified system assembly
and thermal management.
Features:
□Low Drive Power
□Low V CE(sat)
□Discrete Super-Fast Recovery
(135ns) Free-Wheel Diode
□High Frequency Operation
(20-25kHz)
□Isolated Baseplate for Easy
Heat Sinking
Applications:
□AC Motor Control
□Motion/Servo Control
□UPS
□Welding Power Supplies
□Laser Power Supplies
Ordering Information:
Example: Select the complete par t
module number you desire from
the table below -i.e. CM50DY-24H
is a 1200V (VCES), 50 Ampere
Dual IGBTMOD™ Power Module.
Type Current Rating VCES
Amperes Volts (x 50)
CM 50 24
B
FF
C
K
R
R
R
D
A
EG
N
H
H
J
P
M
C1
E1
(3 TYP.)
(2 TYP.)
(3 TYP.)
E2C2E1
E2
E1
C1
E2
.110 TAB
G1
E2
G2
C2E1
G1 G2
S - M5 THD
Q - DIA.
L
254
CM50DY-24H
Dual IGBTMOD™ H-Series Module
50 Amperes / 1200 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Absolute Maximum Ratings, Tj = 25 °C unless otherwise specified
Ratings Symbol CM50DY-24H Units
Junction Temperature Tj–40 to 150 °C
Storage Temperature Tstg –40 to 125 °C
Collector-Emitter Voltage (G-E SHORT) VCES 1200 Volts
Gate-Emitter V oltage VGES ±20 Volts
Collector Current IC50 Amperes
Peak Collector Current ICM 100* Amperes
Diode Forward Current IF50 Amperes
Diode Forward Surge Current IFM 100* Amperes
Power Dissipation Pd400 Watts
Max. Mounting Torque M5 Terminal Screws – 17 in-lb
Max. Mounting Torque M6 Mounting Screws – 26 in-lb
Module Weight (Typical) – 190 Grams
V Isolation VRMS 2500 Volts
* Pulse width and repetition rate should be such that device junction temperature does not exceed the device rating.
Static Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector-Cutoff Current ICES VCE = VCES, VGE = 0V – – 1.0 mA
Gate Leakage Current IGES VGE = VGES, VCE = 0V – – 0.5
µ
A
Gate-Emitter Threshold Voltage VGE(th) IC = 5mA, VCE = 10V 4.5 6.0 7.5 Volts
Collector-Emitter Saturation Voltage VCE(sat) IC = 50A, VGE = 15V – 2.5 3.4** Volts
IC = 50A, VGE = 15V, Tj = 150°C – 2.25 – Volts
Total Gate Charge QGVCC = 600V, IC = 50A, VGS = 15V – 250 – nC
Diode Forward Voltage VFM IE = 50A, VGS = 0V – – 3.5 Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Input Capacitance Cies – – 10 nF
Output Capacitance Coes VGE = 0V, VCE = 10V, f = 1MHz – – 3.5 nF
Re verse Transf er Capacitance Cres – – 2 nF
Resistive Turn-on Delay Time td(on) – – 80 ns
Load Rise Time trVCC = 600V, IC = 50A, – – 200 ns
Switching Turn-off Delay Time td(off) VGE1 = VGE2 = 15V, RG = 6.3Ω– – 150 ns
Times F all Time tf– – 350 ns
Diode Reverse Recovery Time trr IE = 50A, diE/dt = –100A/
µ
s – – 250 ns
Diode Reverse Recovery Charge Qrr IE = 50A, diE/dt = –100A/
µ
s – 0.37 –
µ
C
Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specified
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case Rth(j-c) Per IGBT – – 0.31 °C/W
Thermal Resistance, Junction to Case Rth(j-c) Per FWDi – – 0.70 °C/W
Contact Thermal Resistance Rth(c-f) Per Module, Thermal Grease Applied – – 0.075 °C/W
255
CM50DY-24H
Dual IGBTMOD™ H-Series Module
50 Amperes / 1200 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
OUTPUT CHARACTERISTICS
(TYPICAL)
0246810
60
20
0
V
GE
= 20V
15 12
11
8
7
T
j
= 25
o
C
40
80
100
10
9
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR CURRENT, I
C
, (AMPERES)
TRANSFER CHARACTERISTICS
(TYPICAL)
048121620
80
60
40
20
0
V
CE
= 10V
T
j
= 25°C
T
j
= 125°C
100
COLLECTOR-CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
5
020406080
4
3
2
1
0100
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
10
048121620
8
6
4
2
0
T
j
= 25°C
I
C
= 20A
I
C
= 100A
I
C
= 50A
0 0.8 1.6 2.4 3.2 4.0
10
0
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
10
1
10
2
EMITTER CURRENT, I
E
, (AMPERES)
T
j
= 25°C
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
CAPACITANCE VS. V
CE
(TYPICAL)
10
-1
10
0
10
2
10
2
10
1
10
0
10
-1
V
GE
= 0V
f = 1MHz
10
1
C
ies
C
oes
C
res
COLLECTOR CURRENT, I
C
, (AMPERES)
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10
3
10
0
10
1
10
2
10
2
10
1
t
d(off)
t
d(on)
t
r
V
CC
= 600V
V
GE
= ±15V
R
G
= 6.3Ω
T
j
= 125°C
t
f
EMITTER CURRENT, I
E
, (AMPERES)
REVERSE RECOVERY TIME, t
rr
, (ns)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
10
3
10
0
10
1
10
2
10
2
10
1
t
rr
I
rr
di/dt = -100A/µsec
T
j
= 25°C
10
1
10
0
10
-1
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
GATE CHARGE, Q
G
, (nC)
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
GATE CHARGE, V
GE
20
0 100 200
16
12
8
4
0300 400
V
CC
= 600V
V
CC
= 400V
I
C
= 50A
256
CM50DY-24H
Dual IGBTMOD™ H-Series Module
50 Amperes / 1200 Volts
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT)
10
1
10
-5
10
-4
10
-3
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.31°C/W
Z
th
= R
th
• (NORMALIZED VALUE)
10
-1
10
-2
10
-3
TIME, (s)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(FWDi)
10
1
10
-5
10
-4
10
-3
10
0
10
-1
10
-2
10
-3
10
-3
10
-2
10
-1
10
0
10
1
Single Pulse
T
C
= 25°C
Per Unit Base = R
th(j-c)
= 0.7°C/W
Z
th
= R
th
• (NORMALIZED VALUE)
10
-1
10
-2
10
-3