DML3009LDC
NEW PRODUCT
ADVANCE INFORMATION
ADVANCED INFORMATION
NEW PRODUCT
SINGLE C HANNEL SMART LO AD SWIT C H
Description and Applications
The DML3009LDC load switch provides a component and area-
reducing solution for efficient power domain switching with inrush
current limit via soft-
start. In addition to integrated cont rol functionality
with ultra-low on-
resist ance, this device offers system safeguards and
monitoring via fault protection and power good signaling. This cost-
effective solution is ideal for power management and hot-
swap
applicat i ons requiri ng low power consumption in a small footprint.
Applications
Portable Electroni cs and Syst ems
Notebook and Tablet Computers
Telecom, Networking, Medic al, and Indust rial Equipm ent
Set-Top Boxes, Servers, and Gateways
Hot-Swap Devices and Peripheral Ports
Features an d Benef its
Advanced Controll er with Charge Pump
Integrated N-Channel MOSFET with Ultra-Low RON
Input Voltage Range 0.5V to 13.5V
Soft-Start via Control l ed Slew Rate
Adjustable Slew Rate Control
Power Good Signal
Thermal Shutdown
VIN Undervoltage Lockout
Short-Circuit Protection
Extremely Low Standby Current
Load Bleed (Quick Discharge)
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Ordering Information (Note 4)
Part Number
Case
Packaging
DML3009LDC-7
V-DFN3030-12 (Type B)
3000/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/ 95/EC (Ro H S), 20 11/65/EU (RoHS 2) & 2015/ 8 63/EU (Ro H S 3) com pliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony -free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
Top View
V-DFN3030-12 (Typ e B)
LS39 = Product Type Marking Code
YYWW = Date Code Marking
YY = Last Two Digits of Year (ex: 1
8 = 2018)
WW = Week Code (01 to 53)
Y
LS39
Y
WW
V-DFN3030-12 (Typ e B)
DML3009LDC
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DML3009LDC
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Typical Application Circuit
DML3009
V
OUT
V
OUT
V
OUT
V
OUT
NC
BLEED
V
IN
EN
V
CC
GND
SR
PG
V
VIN
O FF ON
V
VCc
V
VOUT
R
BLEED
100Ω
R
PG
100kΩ
C
V OUT
0.1uF
C
SR
1nF
C
VCC
1uF
C
VIN
1uF
V
IN
1
2
3
4
5
67
8
9
10
11
12
13
V
TE RM
Pin Description
Pin Number
Pin Name
Pin Function
1, 13
VIN
Drain of MOSFET (0.5V to 13.5V). Pin 1 must be connected to Pin 13.
2
EN
Active−high digital input used to turn on the MOSFET, pin has an internal pull down resistor to GND
3
VCC
Supply voltage to controller (3.0V to 5.5V).
4
GND
Controller ground.
5
SR
Slew rate adjustment; Please refer CSR vs. VOUT rising time table.
6
PG
Active-high, open-drain output that indicates when the gate of the MOSFET is fully charged, external
pull up resistor 1
k
to an external voltage source required; tie to GND if not used.
7
BLEED
Load bleed connection, must be tied to VOUT either directly or through a resistor
1
k
.
8 to 12
VOUT
Source of MOSFET connected to load.
Function Block Diagram
V
OUT
DML3009LDC
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Absolute Maximum Rating
Parameter
Rating
VIN, BLEED, VOUT to GND -0.3V to 18V
EN, VCC, SR, PG to GND -0.3V to 6V
IMAX 20A
Junction Temperature (TJ) +150°C
Storage Temperature (T
S
)
-65°C to +150°C
Recommended Operating Ranges
Parameter
Rating
Supply Voltage (VVCC) 3V to 5.5V
Input Volt age (VVIN) 0.5V to 13.5V
Ambient Temperature (TA) -40°C to +85°C
Package Thermal Resistanc e (ϴ
JC
)
3.5°C/W
Package Thermal Resistanc e (ϴ
JA
)
30°C/W
Electrical Characeristics (TA = +25°C, VVCC=3.3V, VVIN=5V=VTERM, CVIN=1μF, CVOUT=0.1μF, CVCC=1μF, CSR=1nF,
unless otherwise specified.)
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
V
VIN
Input Voltage 0.5 13.5 V
V
VCC
Supply Voltage 3.0 5.5 V
IDYN VCC Dynamic S uppl y Current V
EN
=V
VCC
= 3V, V
VIN
= 12V
310
400
µA
VEN =VVCC= 5.5V, VVIN = 1.8V
510
750
µA
ISTBY VCC Shutdown Supply Current
VVCC = 3V, VEN = 0V
0.1 1 µA
VVCC = 5.5V, V EN = 0V
0.1 2 µA
VENH
EN High Level Voltage
VVCC = 3V to 5.5V
2.0
V
VENL
EN Low Level Voltage
VVCC = 3V to 5.5V
0.8
V
RBLEED Bl eed Resist ance
VVCC = 3V, VEN = 0V
86
108
130
VVCC = 5.5V, V EN = 0V 64 80 100
IBLEED Bleed Pin Leakage Current V
VCC
= V
EN
= 3V, V
VIN
= 1.8V 20 45 µA
V
VCC
= V
EN
= 3V, V
VIN
= 12V 50 70 µA
VPGL
PG Output Low Voltage
VVCC = 3V; ISINK = 5mA
0.2
V
IPG
PG Output Leakage Current
VVCC = 3V; VTERM = 3.3V
100 nA
Switching Device
RON Switch On-State Resistance
VVCC = 3.3V, VVIN = 1 .8V
6.1
9
m
VVCC = 3.3V, VVIN = 5 V
5.9
8
m
VVCC = 3.3V, VVIN = 12V
5.8
8
m
VVCC = 5V, VVIN = 1.8V
4.8
7
m
VVCC = 5V, VVIN = 5V
4.8 7
m
VVCC = 5V, VVIN = 12V
4.8 7
m
ILEAK
Input Shutdown Supply Current
VEN = 0V, VVIN = 13.5V
1 µA
RPDEN
EN Pull Down Resistance
76
100
124
k
Fault Protection
OTP
Thermal Shutdown Threshold
VVCC
= 3V to 5.5V
145
°C
OTPHYS
Thermal Shutdown Hysteresis
VVCC
= 3V to 5.5V
20
°C
UVLO
VIN Lockout Threshold
VVCC = 3V
0.25
0.35
0.45
V
UVLOHYS VIN Lockout Hysteresis VVCC = 3V 20 40 70 mV
SCP Short−Circuit Protection Threshold V
VCC
= 3.3V; V
VIN
= 0.5V 180 265 350 mV
V
VCC
= 3.3V; V
VIN
= 13.5V 100 285 500 mV
DML3009LDC
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Switching Characeristics (TA = +25°C, VTERM = VVCC = 5V, RPG = 100k, RVOUT = 10, CVIN = 1μF, CVOUT = 0.1μF, CVCC = 1μF,
CSR = 1nF, unless otherwise specified.)
Symbol
Parameter
Condition
Min
Typ
Max
Unit
VVIN = 1. 8V
tON Output Turn-On Delay Time
VVCC = 3.3V
375
µs
VVCC = 5V
370
tOFF Output Turn-Off Delay Time
VVCC = 3.3V
0.5
VVCC = 5V
0.5
tPGON Power Good Turn-on Time
VVCC = 3.3V
1.4
ms
VVCC = 5V
1.3
tPGOFF Power Good Turn-off Time
VVCC = 3.3V
10
ns
VVCC = 5V
6
SR Output Slew Rate
VVCC = 3.3V
9
kV/s
VVCC = 5V
9
VVIN = 12V
tON Output Turn-On Delay Time
VVCC = 3.3V
340
µs
VVCC = 5V
330
tOFF Output Turn-Off Delay Time
VVCC = 3.3V
0.5
VVCC = 5V
0.4
tPGON Power Good Turn-on Time
VVCC = 3.3V
1.6
ms
VVCC = 5V
1.5
tPGOFF Power Good Turn-off Time
VVCC = 3.3V
10
ns
VVCC = 5V
8
SR Output Slew Rate
VVCC = 3.3V
30
kV/s
VVCC = 5V
31
tON tOFF
tPG,ON tPG,OFF
Figure 1 Timing Diagram
DML3009LDC
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Performance Characteristics (@TA = +25°C, unless otherwise specif i ed.)
200
300
400
500
600
700
800
012345678910 11 12 13 14
Supply Dynamic Current (μA)
In put Voltage (V)
Supply Dynami c Current vs. Input Votlage
VCC = 5.5V
VCC = 3V
IOUT = 0A
200
300
400
500
600
700
800
33.5 44.5 55.5
Supply Dynamic Current (μA)
Suppl y Volta ge (V )
Supply Dynami c Current vs. Supply Votlage
VIN = 12V
VIN = 1.8V
IOUT = 0A
60
70
80
90
100
110
120
130
140
150
160
33.5 44.5 55.5
Bleed Resistance (Ω)
Suppl y Volta ge (V )
Bleed Resistance vs. Supply Votlage
VEN = 0V
0
10
20
30
40
50
60
70
012345678910 11 12 13 14
Bleed Leakage Current (μA)
In put Voltage (V)
Bleed Leakage Current vs. Input Votlage
VCC = 5.5V
VCC = 3V
6.0
6.2
6.4
6.6
6.8
7.0
7.2
7.4
7.6
7.8
8.0
012345678910 11 12 13 14
ON Resistance (mΩ)
In put Voltage (V)
ON Resistance vs. Input Votlage
VCC = 3V
VCC = 5.5V
IOUT = 0.5A
Supply Dynamic Current vs. Input Voltage
Supply Dynamic Current vs. Supply Voltage
Bleed Resistance vs. Supply Voltage
Bleed Leakage Current vs. Input Voltage
ON Resistance vs. Input Voltage
DML3009LDC
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Performance Characteristics (@TA = +25°C, unless otherwise specifi ed. cont.)
Turn ON Response
Turn OFF Response
VVIN = 1.8V , VVCC = 3. 3V, VEN = 0V to 3.3V, RL = 10Ω
VVIN = 1.8V , VVCC = 3. 3V, VEN = 3.3V t o 0V, RL = 10Ω
Turn ON Response
Turn OFF Response
VVIN = 5.0V, VVCC = 3 .3V , VEN = 0V to 3 .3V, RL = 10 Ω
VVIN = 5.0V, VVCC = 3 .3V , VEN = 3.3V t o 0V, RL = 10Ω
Turn ON Response
Turn OFF Response
VVIN = 12V, VVCC = 3.3V, VEN = 0V to 3.3V, RL = 10Ω
VVIN = 12V, VVCC = 3.3V, VEN = 3.3V to 0V, RL = 10Ω
200μs/div
500ns/div
V
EN
2V/div
V
PG
5V/div
V
OUT
1V/div
I
OUT
200mA/div
V
EN
2V/div
V
PG
5V/div
V
OUT
1V/div
I
OUT
200mA/div
200μs/div
500ns/div
V
EN
2V/div
V
PG
5V/div
V
OUT
2V/div
I
OUT
500mA/div
V
EN
2V/div
V
PG
5V/div
V
OUT
2V/div
I
OUT
500mA/div
200μs/div
500ns/div
V
EN
2V/div
V
PG
5V/div
V
OUT
5V/div
I
OUT
1A/div
V
EN
2V/div
V
PG
5V/div
V
OUT
5V/div
I
OUT
1A/div
DML3009LDC
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Performance Characteristics (@TA = +25°C, unless otherwise specified. cont.)
Turn ON Response
Turn OFF Response
VVIN = 1.8V , VVCC = 5.0V, VEN = 0V to 3.3V, RL = 10 Ω
VVIN = 1.8V , VVCC = 5.0V, VEN = 3.3V t o 0V, RL = 10Ω
Turn ON Response
Turn OFF Response
VVIN = 5.0V, VVCC = 5.0V, VEN = 0V to 3. 3V, RL = 10Ω
VVIN = 5.0V, VVCC = 5.0V, VEN = 3.3 V to 0V, RL = 10Ω
Turn ON Response
Turn OFF Response
VVIN = 12V, VVCC = 5.0V, VEN = 0V t o 3.3V, RL = 1 0Ω
VVIN = 12V, VVCC = 5.0V, VEN = 3.3V to 0V, RL = 10Ω
200μs/div
500ns/div
V
EN
2V/div
V
PG
5V/div
V
OUT
1V/div
I
OUT
200mA/div
V
EN
2V/div
V
PG
5V/div
V
OUT
1V/div
I
OUT
200mA/div
200μs/div
500ns/div
V
EN
2V/div
V
PG
5V/div
V
OUT
2V/div
I
OUT
500mA/div
V
EN
2V/div
V
PG
5V/div
V
OUT
2V/div
I
OUT
500mA/div
200μs/div
500ns/div
V
EN
2V/div
V
PG
5V/div
V
OUT
5V/div
I
OUT
1A/div
V
EN
2V/div
V
PG
5V/div
V
OUT
5V/div
I
OUT
1A/div
DML3009LDC
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Application Information
General Description
The DML3009LDC is a single-channel load switch with a controlled adjustable turn-on and integrated PG indicator in a 12-pi n DFN30x30 pac kage.
The device contains an N-channel MOSFET that can operate over an input voltage range of 0.5V to 12V and can support a maximum continuous
current of 10A. The wide-input voltage range and high-current capability enable the device to be used across multiple designs and end equipment.
6mΩ on-resistance minimizes the voltage drop across t he load switch and power loss from the load switch.
The control led rise time for the device greatly reduces inrus h current by large bulk load capacitances thereby reducing or el iminating power supply
droop. The adjustable slew rate through SR provides the design flexibility to trade off the inrush current and power up timing requirements.
Integrated PG indicator notifies the system about the status of the load switch to facilitate seamless power sequencing. During shutdown, the
device has very low leakage current thereby reducing unnecessary leakages for downstream modules during standby. The DML3009LDC also
has an embedded 100Ω on-chip resistor on BLEED pin for quick discharge of the output when switch is disabled.
Enable Control
The DML3009LDC device allows for enabling the MOSFET in an active-high configuration. When the VCC supply pin has an adequate voltage
applied, and the EN pin is at logic high level, the MOSFET is enabled. Similarly, when the EN pin is at logic low level, the MOSFET is disabled. An
internal pull -down resistor to ground on the EN pin ensures that the MOSFET disables when not being driven.
Power Sequencing
The DML3009LDC device functions with any power sequence, but the output turn-on delay performance can vary from what is specified. To
archive the specif i ed performance, there are two recommended power sequences:
1.) VVCC VVIN VEN
2.) VVIN VVCC VEN
Load Bleed (Quick Discharge)
The DML3009LDC device has an internal bleed discharge device, which is used to bleed the charge off of the load to ground after the MOSFET is
disabled. The bleed discharge device is enabled whenever the MOSFET is disabled. The MOSFET and the bleed device are never concurrently
active.
The BLEED pin must be connected to VOUT either direc tly or through an external resistor, REXT. REXT must not exceed 1KΩ and c an be used t o
increase the total bleed resistance.
Care must be taken to ensure that the power dissipated across RBLEED is kept at safe level. The maximum continuous power that dissipates
across RBLEED is 0 .4W. REXT can be used to decrease the amount of power dissi pated across RBLEED.
Adjustable Rise Time (Slew Rate Control)
The DML3009LDC device has controlled rise time for inrush current control. A capacitor to ground on the SR pin adjusts the rise time. Without a
capacitor on SR, the rise time is at its minimum for fastest timing. Equation 1 approximately shows the relationship between CSR, VIN, and rise
time, tR.
𝒕𝑹=𝑲𝟐𝑪𝑺𝑹𝑽𝑰𝑵 +𝑲𝟑𝟐+ 𝑽𝑰𝑵 +𝑲𝟒𝑪𝑺𝑹 𝑲𝟓
Where tR is the rise time (μs)
VIN is the input voltage (V)
K2, K3, K4 , and K5 is constant where K2 = 0.067, K3 = 137, K4 = 6.7, K5 = 67
CSR is the capacitance value on the SR pin (pF)
DML3009LDC
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Application Information (continued)
Table 1 contains rise time values measured on a typical device. Rise times shown below are only valid for the power-up sequence 1.
Table1. Rise Times vs SR Capacitor
CSR
Rise Time
VCC = 5V, CL = 0.1µF, RL = 10Ω, 25°C; Measure VOUT rising time from 10% to 90% VVIN
VVIN = 13.5V
VVIN = 12V
VVIN = 5V
VVIN = 1.8V
0 (floating)
371μs
346μs
233μs
142μs
0.22nF
448μs
430μs
318μs
232μs
0.47nF
646μs
615μs
452μs
262μs
1nF
902μs
880μs
750μs
393μs
2.2nF
1408μs
1370μs
1028μs
585μs
4.7nF
2040μs
1935μs
1466μs
958μs
Note: An SR Capacitor less than 4.7nF for system success startup is recommended.
Power Good
The DML3009LDC device has a power good output (PG) t hat can be used to indicate when the gate of the MOSFET is driven high and the s witch
is on with the on-resistance close to its final value (full load ready). The PG pin is an active-high, open-drain output that requires an e xternal pull-
up resist or, RPG, greater than or equal to 1KΩ to an external voltage source, VTERM, compatible with input levels of thos e devices connected t o this
pin. Equati on 2 approximately show s the relationship between CSR, VIN, and PG turn-on time, tPG_ON.
𝒕𝑷𝑮_𝑶𝑵 = 𝒕𝑹+𝑲𝟏
Where
tPG_ON is the PG turn-on time (μs)
K1 is constant, which is K1 = 800
Table 2 contains PG turn-on time values measured on a typical device. PG turn-on times shown below are valid for the power-up sequence 1.
Table 2. PG Turn-On Times vs SR Capacitor
CSR
PG turn-on time
VCC = 5V, CL = 0.1µF, RL = 10Ω, RPG = 10KΩ, 25°C
VVIN = 13.5V
VVIN = 12V
VVIN = 5V
VVIN = 1.8V
0 (floating)
1171μs
1098μs
863μs
935μs
0.22nF
1338μs
1260μs
1148μs
982μs
0.47nF
1464μs
1455μs
1292μs
1102μs
1nF
1702μs
1630μs
1530μs
1293μs
2.2nF
2248μs
2210μs
1868μs
1425μs
4.7nF
2840μs
2685μs
2467us
1758μs
The power good output can be used as the enabl e signal for other active-high devic es in the system. This allows for guaranteed by des ign power
sequencing and reduces the number of enable signals required from the system c ont rol l er. I f the power good feature is not used in the application,
the PG pin must b e tied to GND.
Short-Circuit Protec tion
The DML3009LDC device is equipped with short-ci rcuit protection that is us ed to help protect the part and the system from a sudden high-current
event, such as the output, VOUT, being shorted to ground. This circuitry is onl y active when the gate of MOSFET is fully charged.
Once active, the circuitry monitors t he difference in the voltage on the VIN pin and the voltage on the BLEED pin. In order for the VOUT volt age to
be monitored through t he BLEED pin, it is requi red that BLEED pin be connec ted to VOUT either directly or through a resistor, REXT, which should
not exceed 1KΩ. With the BLEED pin connected to VOUT, the short-circuit protection is able to monitor the voltage drop ac ross the MOSFET.
If the voltage drop across the MOSFET is greater than or equal to the short-circuit protection threshold voltage, the MOSFET is immediately
turned off, and t he load bleed is activated. The part remains latched in this off state until EN is toggled or VCC supply voltage is cycl ed at which
point the MOSFET turns on del ay and slew rate. The current through the MOSFET t hat causes a s hort-circuit event can be calculated by dividing
the short-circuit prot ect i on thres hold by expected on-resi st ance of the MOSFET
DML3009LDC
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Application Information (continued)
Thermal Shutdown
The DML3009LDC device has equipped thermal shutdown protect ion for internally or externally generated excess ive temperatures. This circuitry
is disabled when EN is not active to reduce standby current. W hen an overtemperature condition is detect ed, the MOSFET immediately turns off,
and the load bleed is active.
The part comes out of thermal shutdown when the junction temperature decreases to a safe operating temperature as dictated by the thermal
hysteresis. Upon exiting a thermal shutdown state and if EN remains active, the MOSFET turns on in a controlled fashion with the normal output
turn-on delay and slew rate.
Undervoltage Lockout
The DML3009LDC device has equipped undervoltage lock out protection. DML3009LDC turns the MOSFET off and activates the load bleed when
the input voltage. VIN, is less than or equal to the undervoltage lockout threshold. This circuitry is dis abled when EN is not active to reduce standby
current.
If the VIN voltage rise above the undervoltage lockout threshold and EN remains active, the MOSFET turns on in a controlled fashion with the
normal output turn-on delay and slew rate.
PCB Layout Consideration
1. Place the input/output capacitors CVIN and CVOUT as close as possible to the VIN and VOUT pins.
2. The power traces, which are VIN trace, VOUT trace, and GND trace, should be short, wide, and direct for minimize parasitic inductance.
3. Plac e feedback resis t ance RBLEED as close as possible to BLEED pin.
4. The SR trace must be as short as possible to reduce parasitic capacitance.
5. Place CVCC capacitor near the device pin.
6. Connect the signal ground to the GND pin, and keep a single connection from GND pin to the power ground behind the input or output
capacitors.
7. For bett er power dissipation, via holes are recommended to connect the exposed pad’s landing area to a l arge copper polygon on t he other
side of the PCB. The copper polygons and exposed pad shall connect to VIN pin on the printed circuit board.
2
1
3
4
5
6
11
12
10
9
8
7
V
IN
EN
Vcc
GND
SR
PG
VOUT
VOUT
VOUT
VOUT
VOUT
BLEED
GND (Power)
C
VIN
C
VOUT
R
PG
C
VCC
V
OUT
V
IN
GND (Signal)
R
BLEED
V
IN
C
SR
VTERM
DML3009LDC
Document number: DS39184 Rev. 3 - 2 10 of 12
www.diodes.com December 2018
© Diodes Incorporated
DML3009LDC
NEW PRODUCT
ADVANCE INFORMATION
ADVANCED INFORMATION
NEW PRODUCT
Package Ou t lin e Dim en sio ns
Please see http://www.diodes.com/package-outlines.html for the latest version.
V-DFN3030-12 (Type B)
V-DFN3030-12
Type B
Dim
Min
Max
Typ
A
0.77
0.85
0.80
A1
0.00
0.05
0.02
A3
--
--
0.203
b
0.20
0.30
0.25
D
2.95
3.05
3.00
D2
2.60
2.80
2.70
E
2.95
3.05
3.00
E2
1.90
2.10
2.00
e
0.50BSC
k
--
--
0.20
L
0.25
0.35
0.30
z
--
--
0.125
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
V-DFN3030-12 (Type B)
Dimensions
Value
(in mm)
C
0.50
X
0.32
X1
0.45
X2
2.86
X3
2.82
Y
0.48
Y1
2.10
Y2
3.30
A
A1 A3
Seating Plane
E
E2
L
e
D2
( Pin #1 ID)
k
b
z
D
X2
X
C
Y1 Y2
Y
X1
1
X3
DML3009LDC
Document number: DS39184 Rev. 3 - 2 11 of 12
www.diodes.com December 2018
© Diodes Incorporated
DML3009LDC
NEW PRODUCT
ADVANCE INFORMATION
ADVANCED INFORMATION
NEW PRODUCT
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICT ION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirect l y, any claim of personal injury or death associat ed with such unintended or unaut horized appl i cat i on.
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noted herein may also be covered by one or more United States, international or f orei gn trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of t his docum ent i s the
final and determinative f orm at released by Diodes I ncorporat ed.
LIFE SU PP O R T
Diodes Inc orporated products are specifically not authorized for use as critical components in life support devic es or systems without the express
written approval of the Chief Executive Off icer of Diodes I ncorporat ed. As us ed herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers repres ent that they have all necessary expertise i n the safety and regulatory ramif ications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safet y-related requirem ents concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representati ves against any dam ages arising out of the use of Diodes Incorporat ed products i n such safety-cri tical, life support devices or systems.
Copyright © 2018, Diodes Incorporated
www.diodes.com
DML3009LDC
Document number: DS39184 Rev. 3 - 2 12 of 12
www.diodes.com December 2018
© Diodes Incorporated