STD8NM60ND, STF8NM60ND STP8NM60ND, STU8NM60ND N-channel 600 V, 0.59 , 7 A, FDmeshTM II Power MOSFET TO-220, TO-220FP, IPAK, DPAK Features VDSS (@Tjmax) Type RDS(on) max ID 3 2 3 STD8NM60ND 650 V < 0.70 7A STF8NM60ND 650 V < 0.70 7A STP8NM60ND 650 V < 0.70 7 A(1) STU8NM60ND 650 V < 0.70 7A 100% avalanche tested Low input capacitance and gate charge Low gate input resistance Extremely high dv/dt and avalanche capabilities IPAK TO-220 3 3 1 The worldwide best RDS(on)* area amongst the fast recovery diode devices 2 1 1. Limited only by maximum temperature allowed 1 DPAK Figure 1. 1 2 TO-220FP Internal schematic diagram Application Switching applications Description The FDmeshTM II series belongs to the second generation of MDmeshTM technology. This revolutionary Power MOSFET associates a new vertical structure to the company's strip layout and associates all advantages of reduced onresistance and fast switching with an intrinsic fastrecovery body diode.Strongly recommended for bridge topologies, in ZVS phase-shift converters. Table 1. Device summary Order codes Marking Package Packaging STD8NM60ND 8NM60ND DPAK Tape and reel STF8NM60ND 8NM60ND TO-220FP Tube STP8NM60ND 8NM60ND TO-220 Tube STU8NM60ND 8NM60ND IPAK Tube February 2009 Rev 1 1/17 www.st.com 17 Contents STx8NM60ND Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics ................................... 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 2/17 .............................................. 9 STx8NM60ND 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit TO-220 DPAK IPAK TO-220FP VDS Drain-source voltage (VGS = 0) 600 V VGS Gate-source voltage 30 V ID Drain current (continuous) at TC = 25 C 7 7 (1) A ID Drain current (continuous) at TC = 100 C 4.4 4.4 (1) A IDM (2) Drain current (pulsed) 28 28 (1) A PTOT Total dissipation at TC = 25 C 70 25 W VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s;TC = 25 C) 2500 V dv/dt (3) Peak diode recovery voltage slope Tstg Tj Storage temperature 40 V/ns -55 to 150 C 150 C Max. operating junction temperature 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area 3. ISD 7 A, di/dt 400 A/s, VDD = 80% V(BR)DSS Table 3. Thermal data Value Symbol Parameter Unit TO-220 Rthj-case Thermal resistance junction-case Rthj-amb Thermal resistance junction-amb Table 4. Symbol IPAK TO-220FP 1.79 62.5 Rthj-pcb Thermal resistance junction-pcb Tl DPAK Maximum lead temperature for soldering purpose 100 50 5 C/W 62.5 C/W C/W 300 C Avalanche characteristics Parameter Max value Unit IAS Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) 2.5 A EAS Single pulse avalanche energy (starting Tj = 25 C, ID = IAS, VDD = 50 V) 200 mJ 3/17 Electrical characteristics 2 STx8NM60ND Electrical characteristics (TCASE= 25 C unless otherwise specified) Table 5. Symbol Test conditions Min. Typ. Max. Unit ID = 1 mA, VGS = 0 Drain-source voltage slope VDD = 480 V, ID = 7 A, VGS =10 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating,Tc = 125 C 1 100 A A IGSS Gate body leakage current (VDS = 0) VGS = 20 V 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 A 4 5 V RDS(on) Static drain-source on resistance VGS = 10V, ID = 3.5 A 0.59 0.70 dv/dt(1) 600 V 45 3 V/ns Characteristics value at turn off on inductive load Table 6. Symbol Dynamic Parameter Test conditions Min. Typ. Max. Unit gfs(1) Forward transconductance VDS = 15 V, ID= 5 A 7.5 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 50 V, f = 1 MHz, VGS = 0 560 37 4 pF pF pF Equivalent output capacitance VGS = 0, VDS = 0 to 480 V 90 pF RG Gate input resistance f = 1 MHz Gate DC Bias = 0 Test Signal Level = 20 mV Open Drain 6 Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 480 V, ID = 7 A VGS = 10 V Figure 19 22 4 13 nC nC nC Coss eq.(2) 1. Parameter Drain-source breakdown voltage V(BR)DSS 1. On/off states Pulsed: pulse duration = 300s, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 4/17 STx8NM60ND Electrical characteristics Table 7. Switching times Symbol Parameter td(on) tr td(off) tf Table 8. Turn-on delay time Rise time Turn-off delay time Fall time Parameter ISD Source-drain current Source-drain current (pulsed) ISDM VSD(2) trr Qrr IRRM trr Qrr IRRM Min. VDD = 300 V, ID = 7 A, RG = 4.7 , VGS = 10 V Figure 18, Figure 23 Typ. Max. 9 22 37 22 Unit ns ns ns ns Source drain diode Symbol (1) Test conditions Test conditions Min. Typ. Max. Unit 7 28 A A 1.3 V Forward on voltage ISD = 7 A, VGS = 0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 7 A, di/dt = 100 A/s, VDD = 30 V, Figure 20 120 0.49 8 ns C A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 7 A, di/dt = 100 A/s, VDD = 30 V, Tj=150C Figure 20 170 0.75 9 ns C A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 s, duty cycle 1.5% 5/17 Electrical characteristics STx8NM60ND 2.1 Electrical characteristics Figure 2. Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220 AM03189v1 ID (A) 10 D S( on ) O Li per m at ite io d ni by n m this ax a R rea is 10s 1 100s 1ms Tj=150C Tc=25C 0.1 10ms Sinlge pulse 0.01 0.1 Figure 4. 10 1 100 Safe operating area for DPAK, IPAK Figure 5. Thermal impedance for DPAK, IPAK AM03188v1 ID (A) 10 on ) is 10s S( O Li per m at ite io d ni by n m this ax a R rea 100s D 1 VDS(V) 1ms 10ms Tj=150C Tc=25C 0.1 Sinlge pulse 0.01 0.1 Figure 6. 10 1 100 Safe operating area for TO-220FP AM03190v1 ID (A) 10s ) on S( O Li per m at ite io d ni by n m this ax a R rea is 10 100s D 1 VDS(V) 1ms Tj=150C Tc=25C 0.1 10ms Sinlge pulse 0.01 0.1 6/17 1 10 100 VDS(V) Figure 7. Thermal impedance for TO-220FP STx8NM60ND Figure 8. Electrical characteristics Output characteristics Figure 9. AM03191v1 ID (A) VGS=10V 12 Transfer characteristics AM03192v1 ID (A) VDS=15V 12 7V 10 10 8 8 6 6 6V 4 4 2 2 5V 0 0 5 10 15 20 25 30 VDS(V) Figure 10. Transconductance 2 4 6 8 10 VGS(V) Figure 11. Static-drain source on resistance AM03193v1 GFS (S) 0 0 TJ=-50C AM03194v1 RDS(on) () 0.069 8.5 ID=3.5A VGS=10V 0.064 TJ=25C 6.5 0.059 TJ=150C 0.054 4.5 0.049 2.5 0.044 0.5 0 5 10 0.039 0 ID(A) 2 4 6 ID(A) Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations AM03195v1 VGS (V) VDD=480V 12 VGS ID=7A 500 VDS 10 AM03196v1 C (pF) 1000 Ciss 400 8 300 100 6 Coss 200 4 10 100 2 0 0 5 10 15 20 0 25 Qg(nC) Crss 1 0.1 1 10 100 VDS(V) 7/17 Electrical characteristics STx8NM60ND Figure 14. Normalized gate threshold voltage vs temperature AM03197v1 VGS(th) (norm) Figure 15. Normalized on resistance vs temperature AM03198v1 RDS(on) (norm) 1.9 1.00 1.7 1.5 0.90 1.3 1.1 0.80 0.9 0.7 0.70 -50 -25 0 25 50 75 100 TJ(C) Figure 16. Source-drain diode forward characteristics 0 25 50 75 100 TJ(C) Figure 17. Normalized BVDSS vs temperature AM03199v1 VSD (V) 1.2 0.5 -50 -25 AM031200v1 BVDSS (norm) 1.07 TJ=-50C 1.05 1.0 1.03 0.8 TJ=25C 1.01 0.6 0.99 TJ=150C 0.4 0.97 0.2 0.95 0 0 8/17 10 20 30 40 50 ISD(A) 0.93 -50 -25 0 25 50 75 100 TJ(C) STx8NM60ND 3 Test circuits Test circuits Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test switching and diode recovery times circuit Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform 9/17 Package mechanical data 4 STx8NM60ND Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. 10/17 STx8NM60ND Package mechanical data TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q Typ 4.40 0.61 1.14 0.48 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 0.147 0.104 0.151 0.116 11/17 Package mechanical data STx8NM60ND TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.5 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 L7 E A B D Dia L5 L6 F1 F2 F G H G1 L4 L2 L3 7012510_Rev_J 12/17 STx8NM60ND Package mechanical data TO-251 (IPAK) mechanical data mm. DIM. min. typ max. A 2.20 2.40 A1 0.90 1.10 b 0.64 0.90 b2 0.95 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 6.20 E 6.40 e e1 6.60 2.28 4.40 H 4.60 16.10 L 9.00 9.40 (L1) 0.80 1.20 L2 0.80 V1 10 o 0068771_H 13/17 Package mechanical data STx8NM60ND TO-252 (DPAK) mechanical data DIM. mm. min. typ max. A 2.20 2.40 A1 0.90 1.10 A2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 D 6.00 D1 E 6.20 5.10 6.40 E1 6.60 4.70 e 2.28 e1 4.40 4.60 H 9.35 10.10 L 1 L1 2.80 L2 L4 0.80 0.60 R V2 1 0.20 0o 8o 0068772_G 14/17 STx8NM60ND 5 Packaging mechanical data Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 16.4 N 50 T TAPE MECHANICAL DATA DIM. mm inch MIN. MAX. A0 6.8 7 0.267 0.275 B0 10.4 10.6 0.409 0.417 B1 D 1.5 D1 1.5 E 1.65 MIN. 12.1 0.476 1.6 0.059 0.063 1.85 0.065 0.073 7.4 7.6 0.291 0.299 2.55 2.75 0.100 0.108 0.153 0.161 P0 3.9 4.1 P1 7.9 8.1 0.311 0.319 P2 1.9 2.1 0.075 0.082 40 15.7 MAX. 330 12.992 13.2 0.504 0.520 18.4 0.645 0.724 0.059 0.795 1.968 22.4 0.881 BASE QTY BULK QTY 2500 2500 0.059 F R MIN. MAX. K0 W inch MAX. 1.574 16.3 0.618 0.641 15/17 Revision history 6 STx8NM60ND Revision history Table 9. 16/17 Document revision history Date Revision 09-Feb-2009 1 Changes First release STx8NM60ND Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. 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