February 2009 Rev 1 1/17
17
STD8NM60ND, STF8NM60ND
STP8NM60ND, STU8NM60ND
N-channel 600 V, 0.59 Ω , 7 A, FDmesh™ II Power MOSFET
TO-220, TO-220FP, IPAK, DPAK
Features
■The worldwide best RDS(on)* area amongst the
fast recovery diode devices
■100% avalanche tested
■Low input capacitance and gate charge
■Low gate input resistance
■Extremely high dv/dt and avalanche
capabilities
Application
■Switching applications
Description
The FDmesh™ II series belongs to the second
generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout and
associates all advantages of reduced on-
resistance and fast switching with an intrinsic fast-
recovery body diode.Strongly recommended for
bridge topologies, in ZVS phase-shift converters.
Figure 1. Internal schematic diagram
Type VDSS
(@Tjmax)
RDS(on)
max ID
STD8NM60ND 650 V < 0.70 Ω7 A
STF8NM60ND 650 V < 0.70 Ω7 A
STP8NM60ND 650 V < 0.70 Ω7 A(1)
1. Limited only by maximum temperature allowed
STU8NM60ND 650 V < 0.70 Ω7 A
TO-220
DPAK
IPAK
123
3
2
1
1
3
12
3
TO-220FP
Table 1. Device summary
Order codes Marking Package Packaging
STD8NM60ND 8NM60ND DPAK Tape and reel
STF8NM60ND 8NM60ND TO-220FP Tube
STP8NM60ND 8NM60ND TO-220 Tube
STU8NM60ND 8NM60ND IPAK Tube
www.st.com
Contents STx8NM60ND
2/17
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
STx8NM60ND Electrical ratings
3/17
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter
Value
Unit
TO-220 DPAK IPAK TO-220FP
VDS Drain-source voltage (VGS = 0) 600 V
VGS Gate-source voltage ± 30 V
ID
Drain current (continuous) at
TC = 25 °C 77
(1)
1. Limited only by maximum temperature allowed
A
ID
Drain current (continuous) at
TC = 100 °C 4.4 4.4 (1) A
IDM (2)
2. Pulse width limited by safe operating area
Drain current (pulsed) 28 28 (1) A
PTOT Total dissipation at TC = 25 °C 70 25 W
VISO
Insulation withstand voltage (RMS)
from all three leads to external heat
sink (t = 1 s;TC = 25 °C)
2500 V
dv/dt (3)
3. ISD ≤ 7 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS
Peak diode recovery voltage slope 40 V/ns
Tstg Storage temperature -55 to 150 °C
TjMax. operating junction temperature 150 °C
Table 3. Thermal data
Symbol Parameter
Value
Unit
TO-220 DPAK IPAK TO-220FP
Rthj-case Thermal resistance junction-case 1.79 5 °C/W
Rthj-amb Thermal resistance junction-amb 62.5 100 62.5 °C/W
Rthj-pcb Thermal resistance junction-pcb 50 °C/W
Tl
Maximum lead temperature for
soldering purpose 300 °C
Table 4. Avalanche characteristics
Symbol Parameter Max value Unit
IAS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max) 2.5 A
EAS
Single pulse avalanche energy
(starting Tj = 25 °C, ID = IAS, VDD = 50 V) 200 mJ
Electrical characteristics STx8NM60ND
4/17
2 Electrical characteristics
(TCASE= 25 °C unless otherwise specified)
Table 5. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage ID = 1 mA, VGS = 0 600 V
dv/dt(1)
1. Characteristics value at turn off on inductive load
Drain-source voltage slope VDD = 480 V, ID = 7 A,
VGS =10 V 45 V/ns
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating,Tc = 125 °C
1
100
µA
µA
IGSS
Gate body leakage current
(VDS = 0) VGS = ±20 V ±100 nA
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 3 4 5 V
RDS(on)
Static drain-source on
resistance VGS = 10V, ID = 3.5 A 0.59 0.70 Ω
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
gfs(1)
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Forward transconductance VDS = 15 V, ID= 5 A 7.5 S
Ciss
Coss
Crss
Input capacitance
Output capacitance
Reverse transfer
capacitance
VDS = 50 V, f = 1 MHz, VGS = 0
560
37
4
pF
pF
pF
Coss eq.(2)
2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS
increases from 0 to 80% VDSS
Equivalent output
capacitance VGS = 0, VDS = 0 to 480 V 90 pF
RGGate input resistance
f = 1 MHz Gate DC Bias = 0
Test Signal Level = 20 mV
Open Drain
6Ω
Qg
Qgs
Qgd
Total gate charge
Gate-source charge
Gate-drain charge
VDD = 480 V, ID = 7 A
VGS = 10 V
Figure 19
22
4
13
nC
nC
nC
STx8NM60ND Electrical characteristics
5/17
Table 7. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Turn-off delay time
Fall time
VDD = 300 V, ID = 7 A,
RG = 4.7 Ω, VGS = 10 V
Figure 18,
Figure 23
9
22
37
22
ns
ns
ns
ns
Table 8. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
ISD
ISDM (1)
1. Pulse width limited by safe operating area
Source-drain current
Source-drain current (pulsed)
7
28
A
A
VSD(2)
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage ISD = 7 A, VGS = 0 1.3 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 7 A, di/dt = 100
A/µs, VDD = 30 V,
Figure 20
120
0.49
8
ns
µC
A
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 7 A,
di/dt = 100 A/µs,
VDD = 30 V, Tj=150°C
Figure 20
170
0.75
9
ns
µC
A
Electrical characteristics STx8NM60ND
6/17
2.1 Electrical characteristics
Figure 2. Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220
Figure 4. Safe operating area for DPAK, IPAK Figure 5. Thermal impedance for DPAK, IPAK
Figure 6. Safe operating area for TO-220FP Figure 7. Thermal impedance for TO-220FP
I
D
10
1
0.1
0.01
0.1 1100 V
DS
(V)
10
(A)
Operation in this area is
Limited by max RDS(on)
10µs
100µs
1ms
10ms
Tj=150°C
Tc=25°C
Sinlge
pulse
AM03189v1
I
D
10
1
0.1
0.01
0.1 1100 V
DS
(V)
10
(A)
Operation in this area is
Limited by max RDS(on)
10µs
100µs
1ms
10ms
Tj=150°C
Tc=25°C
Sinlge
pulse
AM03188v1
I
D
10
1
0.1
0.01
0.1 1100 V
DS
(V)
10
(A)
Operation in this area is
Limited by max RDS(on)
10µs
100µs
1ms
10ms
Tj=150°C
Tc=25°C
Sinlge
pulse
AM03190v1
STx8NM60ND Electrical characteristics
7/17
Figure 8. Output characteristics Figure 9. Transfer characteristics
Figure 10. Transconductance Figure 11. Static-drain source on resistance
Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations
ID
6
4
2
0
010 VDS(V)
20
(A)
515 25
8
10
30
12
5V
6V
7V
VGS=10V
AM03191v1 ID
6
4
2
0
04VGS(V)
8
(A)
2610
8
10
12 VDS=15V
AM03192v1
GFS
6.5
4.5
2.5
0.505ID(A)
(S)
10
8.5
TJ=-50°C
TJ=25°C
TJ=150°C
AM03193v1 RDS(on)
0.054
0.049
0.044
0.03904ID(A)
(Ω)
26
0.059
0.064
0.069 ID=3.5A
VGS=10V
AM03194v1
VGS
6
4
2
005Qg(nC)
(V)
20
8
10 15
10
VDD=480V
ID=7A
25
12
300
200
100
0
400
500
VDS
VGS
AM03195v1 C
1000
100
10
1
0.1 10 VDS(V)
(pF)
1100
Ciss
Coss
Crss
AM03196v1
Electrical characteristics STx8NM60ND
8/17
Figure 14. Normalized gate threshold voltage
vs temperature
Figure 15. Normalized on resistance vs
temperature
Figure 16. Source-drain diode forward
characteristics
Figure 17. Normalized BVDSS vs temperature
VGS(th)
1.00
0.90
0.80
0.70
-50 0TJ(°C)
(norm)
-25 75
25 50 100
AM03197v1 R
DS(on)
1.3
1.1
0.9
0.5
-50 0T
J
(°C)
(norm)
-25 75
25 50 100
0.7
1.5
1.7
1.9
AM03198v1
V
SD
020 I
SD
(A)
(V)
10 50
3040
0.2
0.4
0.6
0.8
1.0
1.2
0
T
J
=-50°C
T
J
=25°C
T
J
=150°C
AM03199v1
BVDSS
-50 0TJ(°C)
(norm)
-25 75
25 50 100
0.93
0.95
0.97
0.99
1.01
1.03
1.05
1.07
AM031200v1
STx8NM60ND Test circuits
9/17
3 Test circuits
Figure 18. Switching times test circuit for
resistive load
Figure 19. Gate charge test circuit
Figure 20. Test circuit for inductive load
switching and diode recovery times
Figure 21. Unclamped inductive load test
circuit
Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform
Package mechanical data STx8NM60ND
10/17
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
STx8NM60ND Package mechanical data
11/17
TO-220 mechanical data
Dim mm inch
Min Typ Max Min Typ Max
A 4.40 4.60 0.1730.181
b0.61 0.88 0.024 0.034
b1 1.14 1.70 0.044 0.066
c0.480.70 0.0190.027
D 15.25 15.75 0.6 0.62
D1 1.27 0.050
E 10 10.40 0.393 0.409
e 2.40 2.70 0.094 0.106
e1 4.95 5.15 0.194 0.202
F1.231.32 0.0480.051
H1 6.20 6.60 0.244 0.256
J1 2.40 2.72 0.094 0.107
L1314 0.511 0.551
L1 3.50 3.93 0.137 0.154
L20 16.40 0.645
L3028.90 1.137
∅P3.75 3.85 0.147 0.151
Q2.65 2.95 0.104 0.116
Package mechanical data STx8NM60ND
12/17
Dim.
mm
.xaM.pyT.niM
6.44.4A
7.25.2B
57.25.2D
7.054.0E
157.0F
07.151.11F
5.151.12F
2.559.4G
7.24.21G
4.0101H
612L
6.036.823L
6.018.94L
6.39.25L
4.619.516L
3.997L
2.33aiD
7012510_Rev_J
AB
H
Dia
L7
D
E
L6 L5
L2
L3
L4
F1 F2
F
G
G1
TO-220FP mechanical data
STx8NM60ND Package mechanical data
13/17
DIM. mm.
min. typ max.
A 2.20 2.40
A1 0.901.10
b0.64 0.90
b20.95
b4 5.20 5.40
c 0.45 0.60
c2 0.480.60
D 6.00 6.20
E 6.40 6.60
e2.28
e1 4.40 4.60
H 16.10
L9.00 9.40
(L1) 0.801.20
L2 0.80
V1 10
o
TO-251 (IPAK) mechanical data
0068771_H
Package mechanical data STx8NM60ND
14/17
DIM. mm.
min. typ max.
A 2.20 2.40
A1 0.901.10
A2 0.030.23
b0.64 0.90
b4 5.20 5.40
c 0.45 0.60
c2 0.480.60
D 6.00 6.20
D1 5.10
E 6.40 6.60
E1 4.70
e2.28
e1 4.40 4.60
H9.35 10.10
L1
L1 2.80
L2 0.80
L4 0.60 1
R0.20
V2 0
o
8
o
TO-252 (DPAK) mechanical data
0068772_G
STx8NM60ND Packaging mechanical data
15/17
5 Packaging mechanical data
TAPE AND REEL SHIPMENT
DPAK FOOTPRINT
DIM. mm inch
MIN. MAX. MIN. MAX.
A 330 12.992
B1.5 0.059
C 12.8 13.2 0.504 0.520
D20.2 0.795
G 16.4 18.4 0.645 0.724
N50 1.968
T 22.4 0.881
BASE QTY BULK QTY
2500 2500
REEL MECHANICAL DATA
DIM. mm inch
MIN. MAX. MIN. MAX.
A0 6.8 7 0.267 0.275
B0 10.4 10.6 0.409 0.417
B1 12.1 0.476
D1.5 1.6 0.059 0.063
D1 1.5 0.059
E1.65 1.85 0.065 0.073
F 7.4 7.6 0.291 0.299
K0 2.55 2.75 0.100 0.108
P0 3.9 4.1 0.153 0.161
P1 7.9 8.1 0.311 0.319
P2 1.9 2.1 0.075 0.082
R40 1.574
W 15.7 16.3 0.618 0.641
TAPE MECHANICAL DATA
All dimensions are in millimeters
Revision history STx8NM60ND
16/17
6 Revision history
Table 9. Document revision history
Date Revision Changes
09-Feb-2009 1 First release
STx8NM60ND
17/17
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