A D V A N C E D S E M I C O N D U C T O R, I N C. REV. B
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specif i cations are subjec t to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIO NS MINIMUM TYPICAL MAXIMUM UNITS
BVCBO IC = 100 mA 60 V
BVCEO IC = 100 mA 28 V
BVEBO IE = 20 mA 3.5 V
ICEO VCE = 25 V 30 mA
hFE VCE = 5.0 V IC =3.0 A 25 80 ---
PG VCC = 26 V ICQ = 2 X 200 mA f = 960 MHz
POUT = 60 W 8.5 dB
VSRW VCC = 26 V f = 960 MHz 5:1 ---
NPN SILICON RF POWER TRANSISTOR
CBSL60B
DESCRIPTION:
The ASI CBSL60B is Designed f or
Class AB, Cellular Base Station
Applications up to 960 MHz.
FEATURES:
• Internal Input/Output Matching Networks
• PG = 8.5 dB at 60 W/960 MHz
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 8.0 A
VCBO 60 V
VCEO 28 V
VEBO 3.5 V
PDISS 146 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG -65 °C to +150 °C
θ
θθ
θJC 1.2 °C/W
PACKAGE STYLE .450 BAL FLG (A)
ORDER CODE: ASI10584
MINIMUM
inches / mm
.455 / 11.56
B
C
D
E
F
G
A
MAXIMUM
.120 / 3.05
.465 / 11.81
inches / mm
H
DIM
L
M
J
K
1.095 / 27.8 1
.002 / 0.05
.080 . 2.03
1.105 / 28.0 7
.005 / 0.15
.095 / 2.41
P
N.455 / 11.56
.195 / 4.95
.445 / 11.30
.055 / 1.40 .065 / 1.65
K J
GH
F
C
DE
L
MN
P
.060x45° BAFULL R .100x45°
.130 / 3.30
.785 / 19.94
.055 / 1.40
.230 / 5.84
.525 / 13.34 .535 / 13.59
.120 / 3.05 .130 / 3.30
.838 / 21.28 .850 / 21.59
