MCL4148 / MCL4448
Document Number 85566
Rev. 1.9, 07-Mar-06
Vishay Semiconductors
www.vishay.com
1
9612315
Small Signal Fast Switching Diodes
Features
• Silicon Epitaxial Planar Diodes
• Saving space
• Hermetic sealed parts
• Fits onto SOD323 / SOT23 footprints
• Electrical data identical with the devices 1N4148
and 1N4448 respectively
• Micro Melf package
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
Applications
• Extreme fast switches
Mechanical Data
Case: MicroMELF Glass case
Weight: approx. 12 mg
Cathode Band Color: Black
Packaging Codes/Options:
TR3 / 10 k per 13" reel (8 mm tape), 10 k/box
TR / 2.5 k per 7" reel (8 mm tape), 12.5 k/box
Parts Table
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Part Type differentiation Ordering code Remarks
MCL4148 VRRM = 100 V, VF at IF 50 mA = 1 V MCL4148-TR3 or MCL4148-TR Tape and Reel
MCL4448 VRRM = 100 V, VF at IF 100 mA = 1 V MCL4448-TR3 or MCL4448-TR Tape and Reel
Parameter Test condition Symbol Value Unit
Repetitive peak reverse voltage VRRM 100 V
Reverse voltage VR75 V
Peak forward surge current tp = 1 µs IFSM 2A
Repetitive peak forward current IFRM 450 mA
Forward continuous current IF200 mA
Average forward current VR = 0 IFAV 150 mA
Power dissipation Ptot 500 mW
e2
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2
Document Number 85566
Rev. 1.9, 07-Mar-06
MCL4148 / MCL4448
Vishay Semiconductors
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Typical Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter Test condition Symbol Value Unit
Junction to ambient air mounted on epoxy-glass hard
tissue, Fig. 5,
35 µm copper clad, 0.9 mm2
copper area per electrode
RthJA 500 K/W
Junction temperature Tj175 °C
Storage temperature range Tstg - 65 to + 175 °C
Parameter Test condition Part Symbol Min Typ. Max Unit
Forward voltage IF = 5 mA MCL4448 VF620 720 mV
IF = 50 mA MCL4148 VF860 1000 mV
IF = 100 mA MCL4448 VF930 1000 mV
Reverse current VR = 20 V IR25 nA
VR = 20 V, Tj = 150 °C IR50 µA
VR = 75 V IR5µA
Breakdown voltage IR = 100 µA, tp/T = 0.01,
tp = 0.3 ms
V(BR) 100 V
Diode capacitance VR = 0, f = 1 MHz, VHF = 50 mV CD4pF
Rectification efficiency VHF = 2 V, f = 100 MHz ηr45 %
Reverse recovery time IF = IR =10 mA, iR = 1 mA trr 8ns
IF = 10 mA, VR = 6 V,
iR = 0.1 x IR, RL = 100 Ω
trr 4ns
Figure 1. Forward Current vs. Forward Voltage
0 0.4 0.81.2 1.6
0.1
1
10
100
1000
I - Forward Current (mA)
F
VF- Forward Voltage (V)
2.0
16641
MCL 4148
Scattering Limit
Tj= 25 °C
Figure 2. Forward Current vs. Forward Voltage
0 0.4 0.81.2 1.6
0.1
1
10
100
1000
I - Forward Current (mA)
F
VF- Forward Voltage (V)
2.0
16643
MCL 4448
Scattering Limit
Tj=25°C
MCL4148 / MCL4448
Document Number 85566
Rev. 1.9, 07-Mar-06
Vishay Semiconductors
www.vishay.com
3
Figure 3. Reverse Current vs. Reverse Voltage
Figure 4. Diode Capacitance vs. Reverse Voltage
Figure 5. Board for RthJA definition (in mm)
1
10
100
1000
I- Reverse Current (nA)
R
V
R
-Reverse Voltage (V)
10 1 100
94 9098
T
j
= 25 °C
Scattering Limit
0.1 1 10
0
0.5
1.0
1.5
2.0
3.0
C - Diode Capacitance (pF)
D
100
94 9099
2.5
VR-Reverse Voltage (V)
T
f=1MHz
j= 25 °C
25
2.5
10
0.71 1.3 1.27
9.9
24
0.152
0.355
95 10329
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Document Number 85566
Rev. 1.9, 07-Mar-06
MCL4148 / MCL4448
Vishay Semiconductors
Package Dimensions in mm (Inches)
ISO Method E
9612072
2.8(0.110)
0.9 (0.035) 0.9 (0.035)
Reflow SolderingWave Soldering
1.0 (0.039)
1.4 (0.055)
Cathode indification
1 (0.039) surface plan
2.0 (0.079)
1.8(0.071)
0.25 (0.010)
0.15 (0.006)
1.2 (0.047)
1.1 (0.043)
Glass case
MicroMELF
Glass
< 1.35 (0.053)
> R 2.5 (R 0.098)
Glass
0.6
(0.024)
surface plan
Document No.: 6.560-5007.01-4
Rev. 11, 07.Feb.2005
1.2 (0.047)
2.4 (0.094)
0.8 (0.031) 0.8 (0.031)
0.8 (0.031)
MCL4148 / MCL4448
Document Number 85566
Rev. 1.9, 07-Mar-06
Vishay Semiconductors
www.vishay.com
5
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respectively
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Legal Disclaimer Notice
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Document Number: 91000 www.vishay.com
Revision: 08-Apr-05 1
Notice
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