IGBT MODULE MBN1200D33C Silicon N-channel IGBT OUTLINE DRAWING FEATURES High speed, low loss IGBT module. Low driving power due to low input capacitance MOS gate. Low noise due to ultra soft fast recovery diode. High reliability, high durability module. High thermal fatigue durability. (delta Tc=70C, N>20,000cycles) Isolated head sink (terminal to base). Unit in mm 6-M8 3-M4 CIRCUIT DIAGRAM C C C C E E E 8-7 G E TERMINALS Weight1,200g ABSOLUTE MAXIMUM RATINGS (Tc=25oC ) Item Symbol Collector Emitter Voltage Gate Emitter Voltage VCES VGES DC IC Collector Current 1ms ICp DC IF Forward Current 1ms IFM Junction Temperature Tj Storage Temperature Tstg Isolation Voltage VISO Terminals (M4/M8) Screw Torque Mounting (M6) Notes: (1) Recommended Value 1.80.2/91N*m Unit MBN1200D33C V V 3,300 20 1,200 A 2,400 1,200 A 2,400 o C -40 ~ +125 o C -40 ~ +125 VRMS 6,000(AC 1 minute) 2/10 (1) N*m 6 (2) (2) Recommended Value 5.50.5N*m ELECTRICAL CHARACTERISTICS Item Symbol Unit Min. Typ. Max. Test Conditions VCE=3,300V, VGE=0V, Tj=25oC Collector Emitter Cut-Off Current I CES mA VCE=3,300V, VGE=0V, Tj=125oC Gate Emitter Leakage Current IGES nA VGE=20V, VCE=0V, Tj=25oC Collector Emitter Saturation Voltage VCE(sat) V IC=1,200A, VGE=15V, Tj=125oC Gate Emitter Threshold Voltage VGE(TO) V VCE=10V, IC=1,200mA, Tj=25oC Input Capacitance Cies nF VCE=10V, VGE=0V, f=100kHz, Tj=25oC Rise Time tr VCC=1,650V, Ic=1,200A Turn On Time ton L=100nH Switching Times s Fall Time tf RG=3.3 (3) Turn Off Time toff VGE=15V, Tj=125oC Peak Forward Voltage Drop VFM V Ic=1,200A, VGE=0V, Tj=125oC Vcc=1,650V, Ic=1,200A, L=100nH Reverse Recovery Time trr s 0.8 1.4 Tj=125oC Turn On Loss Eon(10%) J/P 2.1 2.75 VCC=1,650V, Ic=1,200A, L=100nH Turn Off Loss Eoff(10%) J/P 1.6 2.1 RG=3.3 (3) o Reverse Recovery Loss Err(10%) J/P 1.5 2.1 VGE=15V, Tj=125 C IGBT Rth(j-c) 0.008 o Thermal Impedance C/W Junction to case FWD Rth(j-c) 0.016 Notes:(3) RG value is the test condition's value for evaluation of the switching times, not recommended value. Please, determine the suitable RG value after the measurement of switching waveforms (overshoot voltage, etc.) with appliance mounted. * Please contact our representatives at order. * For improvement, specifications are subject to change without notice. * For actual application, please confirm this spec sheet is the newest revision. -500 4.0 - 30 4.8 5.5 140 2.0 2.9 1.7 3.5 2.5 12 60 +500 5.4 6.5 3.2 3.8 3.2 5.6 2.75 PDE-N1200D33C-1 TYPICAL 2000 TYPICAL 2000 TC=125C TC=25C VGE=15V 13V 11V VGE=15V 13V 1500 1000 9V 500 Collector Current, Ic (A) Collector Current, Ic (A) 1500 11V 1000 9V 500 7V 7V 0 5V 0 2 4 6 8 0 10 TYPICAL 4 6 8 10 TYPICAL 1000 VGE=0V Tc=25C Tc=125C Tc=25C 1500 Cies Cies, Coes, Cres(nF) Forward Current, IF (A) 2 Collector to Emitter Voltage, V CE (V) Collector current vs. Collector to Emitter voltage Collector to Emitter Voltage, V CE (V) Collector current vs. Collector to Emitter voltage 2000 5V 0 1000 100 Coes 10 500 Cres 0 0 1 2 3 4 1 0.1 5 Forward Voltage, V F (V) Forward voltage of free-wheeling diode TYPICAL 3.0 [Conditions] VCC=1650V Lp@100nH RG=3.3W VGE=15V TC=125C Inductive Load tf 2.5 td(off) tr 2.0 1.5 1.0 td(on) trr 100 TYPICAL [Conditions] VGE=15V, RG=3.3W VCC=1650V, Lp@100nH, TC=125C, Inductive Load 2.5 VCE 0 0 2.0 Eon(full) IC 10% Eon(10%) 10% VGE t1t3 t4 t2 t4 Eon(10%)= t3 t2 . . IC VCE dt IC VCE dt Eon(full)= t1 1.5 1.0 0.5 0.5 0.0 0 10 3.0 Turn-on Loss Eon (J/pulse) Switching Time, td(on), tr, td(off), tf,trr (m s) 3.5 1 Collector to Emitter Voltage, V CE (V) Capacitance vs. Collector to Emitter Voltage 500 1000 1500 Collector Current, IC (A) Switching time vs. Collector current 0 0 500 1000 1500 Collector Current, IC (A) Turn-on Loss vs. Collector Current PDE-N1200D33C-1 TYPICAL 2.5 TYPICAL 2.5 Err(full) Eoff(full) Reverse Recovery Loss Err (J/pulse) Turn-off Loss Eoff (J/pulse) 2.0 Eoff(10%) 1.5 1.0 [Conditions] TC=125C VCC=1650V 0 Lp@100nH 0 RG=3.3W VGE=15V Inductive Load 0.5 IC VCE 10% 10% VGE t5 t7 t8 Eoff(10%)= t7 t6 Eoff(full)= t t8 t6 . IC.VCE dt 2.0 Err(10%) 1.5 1.0 [Conditions] TC=125C 0 VCC=1650V Lp@100nH RG=3.3W VG=15V Inductive Load 0.5 IC VCE dt t5 0.0 0 500 1000 0.0 1500 Collector Current, IC (A) Turn-off Loss vs. Collector Current Eon(10%) 2000 1000 0 Err(full)= t9 1000 1500 3000 Eoff(full) 2000 Eoff(10%) 1000 0 2 4 6 0 8 0 2 4 6 TYPICAL 0.1 Transient Thermal Impedance, Rth(j-c) (C/W) [Conditions] VCC=1650V IC=1200A Tj=125C VG=15V 3000 2000 Err(full) Err(10%) 1000 0 2 8 Gate Resistance, RG (W) Turn-off Loss vs. Gate Resistance TYPICAL 4000 Recovery Loss, Err (mJ/pulse) t12 t10 . IC. VCE dt IC VCE dt t11 t10 TYPICAL Gate Resistance, RG (W) Turn-on Loss vs. Gate Resistance 0 t [Conditions] VCC=1650V IC=1200A Tj=125C VG=15V Eon(full) 3000 t9 t11 t12 Err(10%)= 4000 Turn-off Loss, Eoff (mJ) Turn-on Loss, Eon (mJ) [Conditions] VCC=1650V IC=1200A Tj=125C VG=15V 500 0.1 IRM 10% Collector Current, IC (A) Reverse Recovery Loss vs. Collector Current TYPICAL 4000 0 VCE IRM IC 4 6 Gate Resistance, RG (W) Recovery Loss vs. Gate Resistance 8 Diode 0.01 IGBT 0.001 0.0001 0.001 0.01 0.1 1 10 Time, t (s) Transient thermal impedance PDE-N1200D33C-1 HITACHI POWER SEMICONDUCTORS Notices 1. The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact Hitachi sales department for the latest version of this data sheets. 2. Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure before use. 3. 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