IGBT MODULE
MBN1200D33C
Silicon N-channel IGBT OUTLINE DRAWING
6-M8
3-M4
8-φ7
Weight：1,200g
Unit in mm
FEATURES
∗ High speed, low loss IGBT module.
∗ Low driving power due to low input
capacitance MOS gate.
∗ Low noise due to ultra soft fast recovery diode.
∗ High reliability, high durability module.
∗ High thermal fatigue durability.
(delta Tc=70°C, N>20,000cycles)
∗ Isolated head sink (terminal to base).
CIRCUIT DIAGRAM
TERMINALS
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CCCC
ABSOLUTE MAXIMUM RATINGS (Tc=25oC )
Item Symbol Unit MBN1200D33C
Collector Emitter Voltage VCES V 3,300
Gate Emitter Voltage VGES V ±20
DC IC 1,200
Collector Current 1ms ICp A 2,400
DC IF 1,200
Forward Current 1ms IFM A 2,400
Junction Temperature T
j oC -40 ~ +125
Storage Temperature T
stg oC -40 ~ +125
Isolation Voltage V
ISO V
RMS 6,000(AC 1 minute)
Terminals (M4/M8) - 2/10 (1)
Screw Torque Mounting (M6) - N·m 6 (2)
Notes: (1) Recommended Value 1.8±0.2/9±1N·m (2) Recommended Value 5.5±0.5N·m
ELECTRICAL CHARACTERISTICS
Item Symbol Unit Min. Typ. Max. Test Conditions
- - 12 VCE=3,300V, VGE=0V, Tj=25oC
Collector Emitter Cut-Off Current I CES mA - 30 60 VCE=3,300V, VGE=0V, Tj=125oC
Gate Emitter Leakage Current IGES nA -500 - +500 VGE=±20V, VCE=0V, Tj=25oC
Collector Emitter Saturation Voltage VCE(sat) V - 4.8 5.4 IC=1,200A, VGE=15V, Tj=125oC
Gate Emitter Threshold Voltage VGE(TO) V 4.0 5.5 6.5 VCE=10V, IC=1,200mA, Tj=25oC
Input Capacitance Cies nF - 140 - VCE=10V, VGE=0V, f=100kHz, Tj=25oC
Rise Time tr - 2.0 3.2 VCC=1,650V, Ic=1,200A
Turn On Time ton - 2.9 3.8 L=100nH
Fall Time tf - 1.7 3.2 RG=3.3Ω (3)
Switching Times
Turn Off Time toff
µs
- 3.5 5.6 VGE=±15V, Tj=125oC
Peak Forward Voltage Drop VFM V - 2.5 2.75 Ic=1,200A, VGE=0V, Tj=125oC
Reverse Recovery Time trr µs - 0.8 1.4
Vcc=1,650V, Ic=1,200A, L=100nH
Tj=125oC
Turn On Loss Eon(10%) J/P 2.1 2.75
Turn Off Loss Eoff(10%) J/P 1.6 2.1
Reverse Recovery Loss Err(10%) J/P 1.5 2.1
VCC=1,650V, Ic=1,200A, L=100nH
RG=3.3Ω (3)
VGE=±15V, Tj=125oC
IGBT Rth(j-c) - - 0.008
Thermal Impedance FWD Rth(j-c) oC/W - - 0.016 Junction to case
Notes:(3) RG value is the test condition’s value for evaluation of the switching times, not recommended value.
Please, determine the suitable RG value after the measurement of switching waveforms
(overshoot voltage, etc.) with appliance mounted.
* Please contact our representatives at order.
* For improvement, specifications are subject to change without notice.
* For actual application, please confirm this spec sheet is the newest revision.
PDE-N1200D33C-1
2000
500
1000
1500
Switching Time, td(on), tr, td(off), tf,trr (ms) Forward Current, I
F
(A)
Collector Current, IC (A)
Switching time vs. Collector current
Forward Voltage, V F (V)
Forward voltage of free-wheeling diode Collector to Emitter Voltage, V CE (V)
Capacitance vs. Collector to Emitter Voltage
PDE-N1200D33C-1
0500 1000 1500
3.5
2.5
3.0
2.0
1.0
1.5
0.0
0.5
TYPICAL
Turn-on Loss Eon (J/pulse)
Collector Current, IC (A)
Turn-on Loss vs. Collector Current
3.0
1.5
2.0
2.5
1.0
0.5
0500 15001000
0
TYPICAL
0 1 3 42 5
0
TYPICAL
VGE=0V
Tc=25°C
Tc=125°C
[Conditions]
VGE=±15V, RG=3.3W
VCC=1650V, Lp@100nH,
TC=125°C, Inductive Load
Cies, Coes, Cres(nF)
trr
td(on)
td(off)
tf
tr
Eon(full)
Eon(10%)
t1
t1
t3
t3
t4
t4
0
10% 10% V
GE
I
C
I
C
V
CE
dt
I
C
V
CE
dt
Eon(10%)=
Eon(full)=
V
CE
0
t2
t2 .
.
2000
042 6 8 10
500
1000
1500
0
TYPICAL
Collector Current, Ic (A)
Collector Current, Ic (A)
Collector to Emitter Voltage, V CE (V)
Collector current vs. Collector to Emitter voltage Collector to Emitter Voltage, V CE (V)
Collector current vs. Collector to Emitter voltage
9V
7V
5V
TC=25°C2000
042 6 8 10
500
1000
1500
0
9V
7V
5V
TYPICAL
TC=125°C
TYPICAL
1000
100
110 100
10
1
0.1
Tc=25°C
[Conditions]
VCC=1650V
Lp@100nH
RG=3.3W
VGE=±15V
TC=125°C
Inductive Load
13V 11V
VGE=15V 13V 11V
VGE=15V
Cies
Coes
Cres
PDE-N1200D33C-1
Turn-off Loss Eoff (J/pulse)
Collector Current, IC
(A)
Turn-off Loss vs. Collector Current Reverse Recovery Loss vs. Collector Current
2.5
2.0
1.5
1.0
0.5
0500 1000 1500
0.0
TYPICAL
[Conditions]
TC=125°C
VCC=1650V
Lp@100nH
RG=3.3W
VGE=±15V
Inductive Load
Reverse Recovery Loss Err (J/pulse)
Collector Current, IC (A)
2.5
2.0
1.0
1.5
0.5
01000500 1500
0.0
TYPICAL
[Conditions]
TC=125°C
VCC=1650V
Lp@100nH
RG=3.3W
VG=±15V
Inductive Load
TYPICAL
0.001 0.01 1 100.1
0.0001
0.001
0.01
0.1
Transient Thermal Impedance, Rth(j-c) (°C/W)
Time, t (s)
Transient thermal impedance
Diode
IGBT
4000
1000
2000
3000
Turn-on Loss, Eon (mJ)
Gate Resistance, RG (W)
Turn-on Loss vs. Gate Resistance
0 642 8
0
TYPICAL
[Conditions]
VCC=1650V
IC=1200A
Tj=125°C
VG=±15V
4000
1000
2000
3000
Recovery Loss, Err (mJ/pulse)
Gate Resistance, RG (W)
Recovery Loss vs. Gate Resistance
0 642 8
0
TYPICAL
[Conditions]
VCC=1650V
IC=1200A
Tj=125°C
VG=±15V
4000
1000
2000
3000
Turn-off Loss, Eoff (mJ)
Gate Resistance, RG (W)
Turn-off Loss vs. Gate Resistance
0 642 8
0
TYPICAL
[Conditions]
VCC=1650V
IC=1200A
Tj=125°C
VG=±15V
Eoff(full)
Eon(full)
Eoff(10%)
Eon(10%)
Err(full)
Err(10%)
Eoff(full)
Eoff(10%)
Err(full)
Err(10%)
t9
t9
t11
t11
t12
t12
10%
I
RM
0.1 I
RM
I
C
I
C
V
CE
dt
I
C
V
CE
dt
Err(10%)=
Err(full)=
V
CE
t
0
t10
t10 .
.
t5
t5
t7
t7
t8
t8
0
10% 10%
V
GE
I
C
I
C
V
CE
dt
I
C
V
CE
dt
Eoff(10%)=
Eoff(full)=
V
CE
0
t6
t
t6 .
.
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