MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1GSeries Dual Bias Resistor Transistors http://onsemi.com NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5311DW1T1G series, two complementary BRT devices are housed in the SOT-363 package which is ideal for low power surface mount applications where board space is at a premium. Features * * * * * * SOT-363 CASE 419B STYLE 1 (3) (2) R1 Q1 MAXIMUM RATINGS (TA = 25C unless otherwise noted, common for Q1 and Q2, - minus sign for Q1 (PNP) omitted) Rating Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Collector Current R2 Q2 R2 (4) Simplifies Circuit Design Reduces Board Space Reduces Component Count Available in 8 mm, 7 inch/3000 Unit Tape and Reel S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant* (1) R1 (5) (6) MARKING DIAGRAM 6 xx M G G 1 xx M G = Device Code = Date Code* = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or position may vary depending upon manufacturing location. ORDERING AND DEVICE MARKING INFORMATION See detailed ordering, shipping, and specific marking information in the table on page 2 of this data sheet. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. (c) Semiconductor Components Industries, LLC, 2012 March, 2014 - Rev. 14 1 Publication Order Number: MUN5311DW1T1/D MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Symbol Total Device Dissipation TA = 25C PD Derate above 25C Thermal Resistance - Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation TA = 25C Max Unit 187 (Note 1) 256 (Note 2) 1.5 (Note 1) 2.0 (Note 2) mW mW/C RqJA 670 (Note 1) 490 (Note 2) C/W Symbol Max Unit 250 (Note 1) 385 (Note 2) 2.0 (Note 1) 3.0 (Note 2) mW PD Derate above 25C mW/C Thermal Resistance - Junction-to-Ambient RqJA 493 (Note 1) 325 (Note 2) C/W Thermal Resistance - Junction-to-Lead RqJL 188 (Note 1) 208 (Note 2) C/W TJ, Tstg -55 to +150 C Junction and Storage Temperature 1. FR-4 @ Minimum Pad 2. FR-4 @ 1.0 x 1.0 inch Pad ORDERING, SHIPPING, DEVICE MARKING AND RESISTOR VALUES Package Marking R1 (K) R2 (K) Shipping MUN5311DW1T1G, SMUN5311DW1T1G, SMUN5311DW1T2G SOT-363 (Pb-Free) 11 10 10 3,000 / Tape & Reel MUN5312DW1T1G, SMUN5312DW1T1G SOT-363 (Pb-Free) 12 22 22 3,000 / Tape & Reel MUN5313DW1T1G, SMUN5313DW1T1G SOT-363 (Pb-Free) 13 47 47 3,000 / Tape & Reel MUN5314DW1T1G, SMUN5314DW1T1G SOT-363 (Pb-Free) 14 10 47 3,000 / Tape & Reel MUN5315DW1T1G, SMUN5315DW1T1G SOT-363 (Pb-Free) 15 10 3,000 / Tape & Reel MUN5316DW1T1G SOT-363 (Pb-Free) 16 4.7 3,000 / Tape & Reel MUN5330DW1T1G, SMUN5330DW1T1G SOT-363 (Pb-Free) 30 1.0 1.0 3,000 / Tape & Reel MUN5331DW1T1G SOT-363 (Pb-Free) 31 2.2 2.2 3,000 / Tape & Reel MUN5332DW1T1G, NSVMUN5332DW1T1G SOT-363 (Pb-Free) 32 4.7 4.7 3,000 / Tape & Reel MUN5333DW1T1G, NSVMUN5333DW1T1G SOT-363 (Pb-Free) 33 4.7 47 3,000 / Tape & Reel MUN5334DW1T1G, NSVMUN5334DW1T1G SOT-363 (Pb-Free) 34 22 47 3,000 / Tape & Reel MUN5335DW1T1G, SMUN5335DW1T1G, SMUN5335DW1T2G SOT-363 (Pb-Free) 35 2.2 47 3,000 / Tape & Reel Device For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 2 MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted, common for Q1 and Q2, - minus sign for Q1 (PNP) omitted) Characteristic Symbol Min Typ Max - - 100 - - 500 Unit OFF CHARACTERISTICS Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) MUN5311DW1T1G, SMUN5311DW1T1G MUN5312DW1T1G, SMUN5312DW1T1G MUN5313DW1T1G, SMUN5313DW1T1G MUN5314DW1T1G, SMUN5314DW1T1G MUN5315DW1T1G, SMUN5315DW1T1G MUN5316DW1T1G MUN5330DW1T1G, SMUN5330DW1T1G MUN5331DW1T1G MUN5332DW1T1G, NSVMUN5332DW1T1G MUN5333DW1T1G, NSVMUN5333DW1T1G MUN5334DW1T1G, NSVMUN5334DW1T1G MUN5335DW1T1G, SMUN5335DW1T1G IEBO Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO Collector-Emitter Breakdown Voltage (Note 3) (IC = 2.0 mA, IB = 0) V(BR)CEO nAdc nAdc mAdc - - - - - - - - - - - - - - - - - - - - - - - - 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 50 - - 50 - - 35 60 80 80 160 160 3.0 8.0 15 80 80 80 60 100 140 140 350 350 5.0 15 30 200 150 140 - - - - - - - - - - - - Vdc Vdc ON CHARACTERISTICS (Note 3) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN5311DW1T1G, SMUN5311DW1T1G MUN5312DW1T1G, SMUN5312DW1T1G MUN5313DW1T1G, SMUN5313DW1T1G MUN5314DW1T1G, SMUN5314DW1T1G MUN5315DW1T1G, SMUN5315DW1T1G MUN5316DW1T1G MUN5330DW1T1G, SMUN5330DW1T1G MUN5331DW1T1G MUN5332DW1T1G, NSVMUN5332DW1T1G MUN5333DW1T1G, NSVMUN5333DW1T1G MUN5334DW1T1G, NSVMUN5334DW1T1G MUN5335DW1T1G, SMUN5335DW1T1G hFE Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) MUN5311DW1T1G, SMUN5311DW1T1G MUN5312DW1T1G, SMUN5312DW1T1G MUN5313DW1T1G, SMUN5313DW1T1G MUN5314DW1T1G, SMUN5314DW1T1G MUN5335DW1T1G, SMUN5335DW1T1G (IC = 10 mA, IB = 5 mA) MUN5330DW1T1G, SMUN5330DW1T1G MUN5331DW1T1G (IC = 10 mA, IB = 1 mA) MUN5315DW1T1G, SMUN5315DW1T1G MUN5316DW1T1G MUN5332DW1T1G, NSVMUN5332DW1T1G MUN5333DW1T1G, NSVMUN5333DW1T1G MUN5334DW1T1G, NSVMUN5334DW1T1G VCE(sat) http://onsemi.com 3 Vdc - - - - - - - - - - 0.25 0.25 0.25 0.25 0.25 - - - - 0.25 0.25 - - - - - - - - - - 0.25 0.25 0.25 0.25 0.25 MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS (Note 3) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) MUN5311DW1T1G, SMUN5311DW1T1G MUN5312DW1T1G, SMUN5312DW1T1G MUN5314DW1T1G, SMUN5314DW1T1G MUN5315DW1T1G, SMUN5315DW1T1G MUN5316DW1T1G MUN5330DW1T1G, SMUN5330DW1T1G MUN5331DW1T1G MUN5332DW1T1G, NSVMUN5332DW1T1G MUN5333DW1T1G, NSVMUN5333DW1T1G MUN5334DW1T1G, NSVMUN5334DW1T1G MUN5335DW1T1G, SMUN5335DW1T1G (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) MUN5313DW1T1G, SMUN5313DW1T1G VOL Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) MUN5311DW1T1G, SMUN5311DW1T1G MUN5312DW1T1G, SMUN5312DW1T1G MUN5313DW1T1G, SMUN5313DW1T1G MUN5314DW1T1G, SMUN5314DW1T1G MUN5333DW1T1G, NSVMUN5333DW1T1G MUN5334DW1T1G, NSVMUN5334DW1T1G MUN5335DW1T1G, SMUN5335DW1T1G (VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kW) MUN5330DW1T1G, SMUN5330DW1T1G (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) MUN5315DW1T1G, SMUN5315DW1T1G MUN5316DW1T1G MUN5331DW1T1G MUN5332DW1T1G, NSVMUN5332DW1T1G VOH Input Resistor MUN5311DW1T1G, SMUN5311DW1T1G MUN5312DW1T1G, SMUN5312DW1T1G MUN5313DW1T1G, SMUN5313DW1T1G MUN5314DW1T1G, SMUN5314DW1T1G MUN5315DW1T1G, SMUN5315DW1T1G MUN5316DW1T1G MUN5330DW1T1G, SMUN5330DW1T1G MUN5331DW1T1G MUN5332DW1T1G, NSVMUN5332DW1T1G MUN5333DW1T1G, NSVMUN5333DW1T1G MUN5334DW1T1G, NSVMUN5334DW1T1G MUN5335DW1T1G, SMUN5335DW1T1G R1 Resistor Ratio MUN5311DW1T1G/SMUN5311DW1T1G/MUN5312DW1T1G/ SMUN5312DW1T1G/MUN5313DW1T1G/SMUN5313DW1T1G MUN5314DW1T1G/SMUN5314DW1T1G MUN5315DW1T1G/SMUN5315DW1T1G/MUN5316DW1T1G MUN5330DW1T1G/SMUN5330DW1T1G/MUN5331DW1T1G/ MUN5332DW1T1G/NSVMUN5332DW1T1G MUN5333DW1T1G/NSVMUN5333DW1T1G MUN5334DW1T1G/NSVMUN5334DW1T1G MUN5335DW1T1G/SMUN5335DW1T1G R1/R2 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% http://onsemi.com 4 Vdc - - - - - - - - - - - - - - - - - - - - - - 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 - - 0.2 Vdc 4.9 4.9 4.9 4.9 4.9 4.9 4.9 - - - - - - - - - - - - - - 4.9 - - 4.9 4.9 4.9 4.9 - - - - - - - - 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 0.8 1.0 1.2 0.17 - 0.8 0.21 - 1.0 0.25 - 1.2 0.055 0.38 0.038 0.1 0.47 0.047 0.185 0.56 0.056 kW MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series ALL MUN5311DW1T1G SERIES DEVICES PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 0 -50 RqJA = 490C/W 0 50 100 TA, AMBIENT TEMPERATURE (C) Figure 1. Derating Curve http://onsemi.com 5 150 MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series 1 1000 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN5311DW1T1G, SMUN5311DW1T1G NPN TRANSISTOR TA=-25C 25C 0.1 75C 0.01 0.001 0 20 40 IC, COLLECTOR CURRENT (mA) VCE = 10 V TA=75C 25C -25C 100 10 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 2 1 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 25C 75C f = 1 MHz IE = 0 V TA = 25C 1 0.1 0.01 VO = 5 V 0.001 50 TA=-25C 10 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 10 VO = 0.2 V TA=-25C 25C 75C 1 0.1 0 10 8 9 Figure 5. Output Current versus Input Voltage Figure 4. Output Capacitance V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 4 3 100 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 6. Input Voltage versus Output Current http://onsemi.com 6 50 10 MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series 1000 1 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN5311DW1T1G, SMUN5311DW1T1G PNP TRANSISTOR IC/IB = 10 TA=-25C 0.1 25C 75C 0.01 0 20 25C 100 -25C IC, COLLECTOR CURRENT (mA) 10 IC, COLLECTOR CURRENT (mA) Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 50 1 100 IC, COLLECTOR CURRENT (mA) 3 2 1 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) TA=-25C 10 1 0.1 0.01 0.001 50 VO = 5 V 0 Figure 9. Output Capacitance 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=-25C 10 25C 75C 1 0 10 8 9 Figure 10. Output Current versus Input Voltage 100 0.1 100 25C 75C f = 1 MHz lE = 0 V TA = 25C V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) TA=75C 10 40 4 0 VCE = 10 V 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 11. Input Voltage versus Output Current http://onsemi.com 7 10 MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series 1000 1 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat) , COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN5312DW1T1G, SMUN5312DW1T1G NPN TRANSISTOR IC/IB = 10 25C TA=-25C 0.1 75C 0.01 TA=75C 25C -25C 100 10 0.001 0 20 50 40 1 100 10 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 4 100 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25C 3 2 1 75C 25C TA=-25C 10 1 0.1 0.01 VO = 5 V 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 0.001 50 Figure 14. Output Capacitance 2 0 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=-25C 10 25C 75C 1 0.1 0 10 8 10 Figure 15. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) VCE = 10 V 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 16. Input Voltage versus Output Current http://onsemi.com 8 50 MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series 1000 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN5312DW1T1G, SMUN5312DW1T1G PNP TRANSISTOR IC/IB = 10 1 25C TA=-25C 75C 0.1 0.01 VCE = 10 V TA=75C 25C -25C 100 10 0 20 IC, COLLECTOR CURRENT (mA) 40 10 1 50 Figure 17. VCE(sat) versus IC Figure 18. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) 3 2 1 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 25C 75C f = 1 MHz lE = 0 V TA = 25C TA=-25C 10 1 0.1 0.01 0.001 50 Figure 19. Output Capacitance VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=-25C 10 25C 75C 1 0.1 0 10 8 9 Figure 20. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 4 0 100 IC, COLLECTOR CURRENT (mA) 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 21. Input Voltage versus Output Current http://onsemi.com 9 10 MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series 10 1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN5313DW1T1G, SMUN5313DW1T1G NPN TRANSISTOR IC/IB = 10 1 25C TA=-25C 75C 0.1 VCE = 10 V TA=75C 25C -25C 100 0.01 0 10 50 20 40 IC, COLLECTOR CURRENT (mA) 10 IC, COLLECTOR CURRENT (mA) 1 Figure 22. VCE(sat) versus IC Figure 23. DC Current Gain 1 100 f = 1 MHz IE = 0 V TA = 25C IC, COLLECTOR CURRENT (mA) 0.4 0.2 0 0 25C 75C 0.6 TA=-25C 10 1 0.1 0.01 VO = 5 V 0.001 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 0 Figure 24. Output Capacitance 2 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=-25C 10 25C 75C 1 0.1 0 10 8 10 Figure 25. Output Current versus Input Voltage 100 V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 0.8 100 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 26. Input Voltage versus Output Current http://onsemi.com 10 MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series TYPICAL ELECTRICAL CHARACTERISTICS - MUN5313DW1T1G, SMUN5313DW1T1G PNP TRANSISTOR VCE(sat) , COLLECTOR VOLTAGE (VOLTS) 1 1000 TA=-25C hFE , DC CURRENT GAIN (NORMALIZED) IC/IB = 10 25C 75C 0.1 0.01 0 10 20 30 IC, COLLECTOR CURRENT (mA) TA=75C 25C -25C 100 10 40 1 10 IC, COLLECTOR CURRENT (mA) Figure 27. VCE(sat) versus IC Figure 28. DC Current Gain 1 100 0.6 0.4 0.2 0 0 -25C 1 0.1 0.01 Figure 29. Output Capacitance VO = 5 V 1 0 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=-25C 25C 75C 1 0.1 0 10 8 9 Figure 30. Output Current versus Input Voltage 100 10 25C TA=75C 10 0.001 50 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C 0.8 100 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 31. Input Voltage versus Output Current http://onsemi.com 11 10 MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series 1 300 IC/IB = 10 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat) , COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN5314DW1T1G, SMUN5314DW1T1G NPN TRANSISTOR TA=-25C 25C 0.1 75C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) TA=75C VCE = 10 250 25C 200 -25C 150 100 50 0 80 1 2 4 6 Figure 32. VCE(sat) versus IC 100 f = 1 MHz lE = 0 V TA = 25C 3 TA=75C IC, COLLECTOR CURRENT (mA) 3.5 2.5 2 1.5 1 0.5 0 2 4 6 8 10 15 20 25 30 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 40 45 25C -25C 10 VO = 5 V 1 50 Figure 34. Output Capacitance 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V TA=-25C 25C 75C 1 0.1 0 10 8 Figure 35. Output Current versus Input Voltage 10 V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 90 100 Figure 33. DC Current Gain 4 0 8 10 15 20 40 50 60 70 80 IC, COLLECTOR CURRENT (mA) 20 30 IC, COLLECTOR CURRENT (mA) 40 Figure 36. Input Voltage versus Output Current http://onsemi.com 12 50 10 MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series 180 1 IC/IB = 10 hFE , DC CURRENT GAIN (NORMALIZED) VCE(sat) , COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS - MUN5314DW1T1G, SMUN5314DW1T1G PNP TRANSISTOR TA=-25C 25C 0.1 75C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) TA=75C VCE = 10 V 160 25C 140 -25C 120 100 80 60 40 20 0 80 2 1 4 6 Figure 37. VCE(sat) versus IC 100 TA=75C 3.5 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 V TA = 25C 4 3 2.5 2 1.5 1 0.5 0 2 4 6 8 10 15 20 25 30 35 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 45 10 VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) VO = 0.2 V 25C TA=-25C 75C 1 0 10 8 10 Figure 40. Output Current versus Input Voltage 10 0.1 25C -25C 1 50 Figure 39. Output Capacitance V in , INPUT VOLTAGE (VOLTS) Cob , CAPACITANCE (pF) 80 90 100 Figure 38. DC Current Gain 4.5 0 8 10 15 20 40 50 60 70 IC, COLLECTOR CURRENT (mA) 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 41. Input Voltage versus Output Current http://onsemi.com 13 MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series 1 1000 IC/IB = 10 75C 0.1 -25C 25C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) TA = -25C 100 10 1 50 25C 1 10 IC, COLLECTOR CURRENT (mA) Figure 42. VCE(sat) versus IC 100 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25C 10 8 6 4 2 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 75C 10 25C 1 TA = -25C 0.1 0.01 0.001 50 Figure 44. Output Capacitance VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 1 75C 25C VO = 0.2 V 0.1 0 9 10 Figure 45. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 Figure 43. DC Current Gain 12 0 VCE = 10 V 75C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5315DW1T1G, SMUN5315DW1T1G NPN TRANSISTOR 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 46. Input Voltage versus Output Current http://onsemi.com 14 50 MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series 1 1000 IC/IB = 10 75C 0.1 -25C 25C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 25C 10 1 50 TA = -25C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 47. VCE(sat) versus IC 100 IC, COLLECTOR CURRENT (mA) 4 f = 1 MHz IE = 0 V TA = 25C 3.5 3 2.5 2 1.5 1 0.5 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 75C 10 25C 1 TA = -25C 0.1 0.01 0.001 50 Figure 49. Output Capacitance VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 1 25C 75C VO = 0.2 V 0.1 0 9 10 Figure 50. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 Figure 48. DC Current Gain 4.5 0 VCE = 10 V 75C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5315DW1T1G, SMUN5315DW1T1G PNP TRANSISTOR 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 51. Input Voltage versus Output Current http://onsemi.com 15 50 MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series 1 1000 IC/IB = 10 75C 0.1 -25C 25C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 25C 10 1 50 TA = -25C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 52. VCE(sat) versus IC IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz IE = 0 V TA = 25C 10 8 6 4 2 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 75C 10 25C 1 TA = -25C 0.1 0.01 0.001 50 Figure 54. Output Capacitance VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 1 75C 25C VO = 0.2 V 0.1 0 9 10 Figure 55. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 Figure 53. DC Current Gain 12 0 VCE = 10 V 75C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5316DW1T1G NPN TRANSISTOR 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 56. Input Voltage versus Output Current http://onsemi.com 16 50 MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series 1 1000 75C 0.1 -25C 25C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) TA = -25C 25C 100 10 1 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 57. VCE(sat) versus IC 100 3 2.5 2 1.5 1 0.5 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 Figure 59. Output Capacitance 75C 10 25C TA = -25C 1 0.1 0.01 0.001 0 VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 1 75C 25C VO = 0.2 V 0.1 0 9 10 Figure 60. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25C 3.5 100 Figure 58. DC Current Gain 4.5 4 VCE = 10 V 75C IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5316DW1T1G PNP TRANSISTOR 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 61. Input Voltage versus Output Current http://onsemi.com 17 50 MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series 1 1000 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5330DW1T1G, SMUN5330DW1T1G NPN TRANSISTOR 75C 0.1 -25C 25C 0.01 0.001 0 5 10 15 20 25 IC, COLLECTOR CURRENT (mA) 100 75C 10 25C TA = -25C 1 30 1 10 IC, COLLECTOR CURRENT (mA) Figure 62. VCE(sat) versus IC Figure 63. DC Current Gain 10 75C 10 Vin, INPUT VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) 100 25C 1 TA = -25C 0.1 0.01 0.001 100 VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 TA = -25C 1 75C 25C VO = 0.2 V 0.1 0 5 10 15 20 IC, COLLECTOR CURRENT (mA) Figure 65. Input Voltage versus Output Current Figure 64. Output Current versus Input Voltage http://onsemi.com 18 25 MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series 100 1 IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5330DW1T1G, SMUN5330DW1T1G PNP TRANSISTOR 75C 0.1 -25C 25C 0.01 75C 10 25C TA = -25C VCE = 10 V 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) 1 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 66. VCE(sat) versus IC Figure 67. DC Current Gain 4.5 f = 1 MHz IE = 0 V TA = 25C 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 75C 10 25C 1 TA = -25C 0.1 0.01 0.001 50 Figure 68. Output Capacitance VO = 5 V 0 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 75C 1 25C VO = 0.2 V 0.1 0 9 10 Figure 69. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) IC, COLLECTOR CURRENT (mA) 100 4 100 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 70. Input Voltage versus Output Current http://onsemi.com 19 50 MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series 1 1000 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5331DW1T1G NPN TRANSISTOR 75C 0.1 -25C 25C 0.01 0.001 0 5 10 15 20 25 IC, COLLECTOR CURRENT (mA) 100 75C 10 1 30 TA = -25C 1 10 IC, COLLECTOR CURRENT (mA) Figure 71. VCE(sat) versus IC IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz IE = 0 V TA = 25C 10 8 6 4 2 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 10 75C 25C 1 TA = -25C 0.1 0.01 0.001 50 Figure 73. Output Capacitance VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 1 75C 25C VO = 0.2 V 0.1 0 9 10 Figure 74. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 Figure 72. DC Current Gain 12 0 25C 5 10 15 20 IC, COLLECTOR CURRENT (mA) Figure 75. Input Voltage versus Output Current http://onsemi.com 20 25 MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series 100 1 IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5331DW1T1G PNP TRANSISTOR 75C 0.1 -25C 25C 0.01 TA = -25C VCE = 10 V 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) 1 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 76. VCE(sat) versus IC IC, COLLECTOR CURRENT (mA) 100 4 f = 1 MHz IE = 0 V TA = 25C 3.5 3 2.5 2 1.5 1 0.5 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 75C 10 25C 1 TA = -25C 0.1 0.01 0.001 50 Figure 78. Output Capacitance VO = 5 V 0 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 75C 1 25C VO = 0.2 V 0.1 0 9 10 Figure 79. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) 0 100 Figure 77. DC Current Gain 4.5 Cob, CAPACITANCE (pF) 25C 75C 10 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 80. Input Voltage versus Output Current http://onsemi.com 21 50 MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series 1 1000 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5332DW1T1G, NSVMUN5332DW1T1G NPN TRANSISTOR 75C 0.1 -25C 25C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 25C 10 TA = -25C 1 50 75C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 81. VCE(sat) versus IC Figure 82. DC Current Gain IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz IE = 0 V TA = 25C 8 6 4 2 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 75C 10 25C 1 TA = -25C 0.1 0.01 0.001 50 Figure 83. Output Capacitance VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 1 75C 25C VO = 0.2 V 0.1 0 9 10 Figure 84. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 12 10 100 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 85. Input Voltage versus Output Current http://onsemi.com 22 50 MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series 1000 1 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5332DW1T1G, NSVMUN5332DW1T1G PNP TRANSISTOR 75C 0.1 -25C 25C 0.01 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) TA = -25C 10 1 50 75C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 86. VCE(sat) versus IC 100 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25C 5 4 3 2 1 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 75C 10 25C 1 TA = -25C 0.1 0.01 0.001 50 Figure 88. Output Capacitance VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 1 75C 25C VO = 0.2 V 0.1 0 9 10 Figure 89. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 Figure 87. DC Current Gain 6 0 25C 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 90. Input Voltage versus Output Current http://onsemi.com 23 50 MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series 1000 1 VCE = 10 V IC/IB = 10 0.1 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5333DW1T1G, NSVMUN5333DW1T1G NPN TRANSISTOR 75C -25C 25C 0.01 0.001 0 5 10 15 25 20 IC, COLLECTOR CURRENT (mA) 75C 1 10 IC, COLLECTOR CURRENT (mA) Figure 91. VCE(sat) versus IC f = 1 MHz IE = 0 V TA = 25C 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 75C 10 25C 1 TA = -25C 0.1 0.01 0.001 50 Figure 93. Output Capacitance VO = 5 V 0 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 1 75C 25C VO = 0.2 V 0.1 0 9 10 Figure 94. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) IC, COLLECTOR CURRENT (mA) 100 3 100 Figure 92. DC Current Gain 4 3.5 25C 10 1 30 TA = -25C 100 20 5 10 15 IC, COLLECTOR CURRENT (mA) Figure 95. Input Voltage versus Output Current http://onsemi.com 24 25 MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series 1 1000 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5333DW1T1G, NSVMUN5333DW1T1G PNP TRANSISTOR 75C 0.1 -25C 25C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 75C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 96. VCE(sat) versus IC IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz IE = 0 V TA = 25C 7 6 5 4 3 2 1 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 75C 10 25C 1 0.1 TA = -25C 0.01 0.001 50 Figure 98. Output Capacitance VO = 5 V 0 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 1 75C 25C VO = 0.2 V 0.1 0 9 10 Figure 99. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 Figure 97. DC Current Gain 8 0 25C 10 1 50 TA = -25C 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 100. Input Voltage versus Output Current http://onsemi.com 25 50 MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series 1 1000 VCE = 10 V IC/IB = 10 75C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5334DW1T1G, NSVMUN5334DW1T1G NPN TRANSISTOR 75C 0.1 -25C 25C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 101. VCE(sat) versus IC IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz IE = 0 V TA = 25C 3 2.5 2 1.5 1 0.5 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 25C 1 0.1 TA = -25C 0.01 0.001 50 75C 10 VO = 5 V 0 Figure 103. Output Capacitance 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 10 TA = -25C 1 75C 25C VO = 0.2 V 0.1 0 9 Figure 104. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 Figure 102. DC Current Gain 3.5 0 25C 10 1 50 TA = -25C 40 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 105. Input Voltage versus Output Current http://onsemi.com 26 50 10 MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series 1000 1 VCE = 10 V IC/IB = 10 0.1 75C -25C 0.01 0.001 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5334DW1T1G, NSVMUN5334DW1T1G PNP TRANSISTOR 0 5 25C 10 15 25 20 IC, COLLECTOR CURRENT (mA) 30 75C 100 TA = -25C 25C 10 1 1 Figure 106. VCE(sat) versus IC 10 IC, COLLECTOR CURRENT (mA) Figure 107. DC Current Gain http://onsemi.com 27 100 MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series 1 1000 VCE = 10 V IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5335DW1T1G, SMUN5335DW1T1G NPN TRANSISTOR 75C 0.1 -25C 25C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 75C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 108. VCE(sat) versus IC IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25C 6 4 2 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 10 25C 1 TA = -25C 0.1 0.01 0.001 50 75C VO = 5 V 0 Figure 110. Output Capacitance 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 1 75C 25C VO = 0.2 V 0.1 0 9 Figure 111. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 8 100 Figure 109. DC Current Gain 12 10 25C 10 1 50 TA = -25C 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 112. Input Voltage versus Output Current http://onsemi.com 28 50 10 MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series 1000 1 VCE = 10 V IC/IB = 10 75C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5335DW1T1G, SMUN5335DW1T1G PNP TRANSISTOR 75C 0.1 -25C 25C 0.01 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 113. VCE(sat) versus IC f = 1 MHz IE = 0 V TA = 25C 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 10 75C 1 TA = -25C 0.1 0.01 0.001 50 25C VO = 5 V 0 Figure 115. Output Capacitance 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 75C 1 25C TA = -25C VO = 0.2 V 0.1 0 9 Figure 116. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) IC, COLLECTOR CURRENT (mA) 100 3.5 100 Figure 114. DC Current Gain 4.5 4 25C 10 1 50 TA = -25C 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 117. Input Voltage versus Output Current http://onsemi.com 29 50 10 MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series 1 0.1 0.01 75C 25C -25C IC/IB = 10 0 1 2 3 4 5 IC, COLLECTOR CURRENT (mA) 6 7 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5336DW1T1G NPN TRANSISTOR 1000 75C TA = -25C 100 10 VCE = 10 V 1 1 10 IC, COLLECTOR CURRENT (mA) Figure 118. VCE(sat) versus IC 100 IC, COLLECTOR CURRENT (mA) 1.0 f = 1 MHz IE = 0 V TA = 25C 0.8 0.6 0.4 0.2 0 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 25C TA = -25C 1 VO = 5 V 0.1 60 0 1 2 3 4 TA = -25C VO = 0.2 V 75C 0 2 6 7 8 9 Figure 121. Output Current versus Input Voltage 10 1 5 Vin, INPUT VOLTAGE (VOLTS) 100 25C 75C 10 Figure 120. Output Capacitance Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 Figure 119. DC Current Gain 1.2 0 25C 4 6 8 10 12 14 16 IC, COLLECTOR CURRENT (mA) 18 Figure 122. Input Voltage versus Output Current http://onsemi.com 30 20 10 MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series 1000 1 75C 75C 25C 0.1 0.01 0.001 0 VCE = 10 V -25C IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5336DW1T1G PNP TRANSISTOR 10 20 40 30 IC, COLLECTOR CURRENT (mA) 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 123. VCE(sat) versus IC IC, COLLECTOR CURRENT (mA) 100 4.5 f = 1 MHz IE = 0 V TA = 25C 4 3.5 3 2.5 2 1.5 1 0.5 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 1 25C TA = -25C 0.1 0.01 0.001 50 75C 10 VO = 5 V 0 Figure 125. Output Capacitance 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 10 75C 1 25C VO = 0.2 V 0.1 0 9 Figure 126. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 Figure 124. DC Current Gain 5 0 25C 10 1 50 TA = -25C 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 127. Input Voltage versus Output Current http://onsemi.com 31 50 10 MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series 1 TA = -25C 75C 0.1 25C 0.01 IC/IB = 10 0 5 10 15 20 25 30 35 40 IC, COLLECTOR CURRENT (mA) 45 50 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5337DW1T1G NPN TRANSISTOR 1000 75C TA = -25C 100 25C VCE = 10 V 10 1 10 IC, COLLECTOR CURRENT (mA) Figure 128. VCE(sat) versus IC Figure 129. DC Current Gain 100 1.0 IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25C 0.8 0.6 0.4 0.2 0 0 10 20 30 40 50 VR, REVERSE BIAS VOLTAGE (VOLTS) TA = -25C 10 25C 1 0.1 0.01 0.001 60 75C VO = 5 V 0 1 2 3 4 VO = 0.2 V 1 TA = -25C 75C 25C 0 6 7 8 9 10 Figure 131. Output Current versus Input Voltage 100 10 5 Vin, INPUT VOLTAGE (VOLTS) Figure 130. Output Capacitance Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 1.4 1.2 100 5 10 15 20 IC, COLLECTOR CURRENT (mA) Figure 132. Input Voltage versus Output Current http://onsemi.com 32 25 11 MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series 1000 1 IC/IB = 10 -25C 75C 0.1 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS -- MUN5337DW1T1G PNP TRANSISTOR 25C 0.01 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) 75C 100 TA = -25C 1 10 IC, COLLECTOR CURRENT (mA) Figure 133. VCE(sat) versus IC IC, COLLECTOR CURRENT (mA) 100 4.5 f = 1 MHz IE = 0 V TA = 25C 4 3.5 3 2.5 2 1.5 1 0.5 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 25C 1 TA = -25C 0.1 0.01 0.001 50 75C 10 VO = 5 V 0 Figure 135. Output Capacitance 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = -25C 10 75C 1 25C VO = 0.2 V 0.1 0 9 Figure 136. Output Current versus Input Voltage 100 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 Figure 134. DC Current Gain 5 0 25C 10 1 50 VCE = 10 V 40 10 20 30 IC, COLLECTOR CURRENT (mA) Figure 137. Input Voltage versus Output Current http://onsemi.com 33 50 10 MUN5311DW1T1G, SMUN5311DW1T1G, NSVMUN5311DW1T1G Series PACKAGE DIMENSIONS SC-88/SC70-6/SOT-363 CASE 419B-02 ISSUE W D e 6 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419B-01 OBSOLETE, NEW STANDARD 419B-02. DIM A A1 A3 b C D E e L HE 4 HE -E- 1 2 3 b 6 PL 0.2 (0.008) M E A3 C A1 INCHES NOM MAX 0.037 0.043 0.002 0.004 0.008 REF 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 0.045 0.049 0.053 0.026 BSC 0.004 0.008 0.012 0.078 0.082 0.086 MIN 0.031 0.000 STYLE 1: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 M A MILLIMETERS MIN NOM MAX 0.80 0.95 1.10 0.00 0.05 0.10 0.20 REF 0.10 0.21 0.30 0.10 0.14 0.25 1.80 2.00 2.20 1.15 1.25 1.35 0.65 BSC 0.10 0.20 0.30 2.00 2.10 2.20 SOLDERING FOOTPRINT* 0.50 0.0197 L 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm inches SC-88/SC70-6/SOT-363 *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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