2N414A-2N487 Numerical Index =) MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS = f= || REPLACE- | PAGE =] tT vcs = hee @ Io Vorsan @ le = = TE HE 7SS | went | wumBer | USE & 5 g elm 1Bl 23 =\o. SB] C | Wvolts) & | (min) (max) Ss = 3 Sls 2N414A G{P RFA A 85] 30 0 2N414B GI] P RFA A 100] 30 v 40 E -OM (B 2N414 G|P RFA A 100f 30 Vv 40 E -OM TB 2N415 GIP RFA A 85!) 30 0 2N415A GIP RRA A 85) 30 0 2N416 G|P RFA A 851 30 0 2N417 GIP RFA A 85} 30 0 2N418 G|P | 2N1537 7-60 PMS c 160] 100 R 40 4.0A 2.0 4,0A 2N419 GIP LPA c 95) 25 0 50 | 350 0.54 0.8 1.54 25 OK 2N420 G | P {| 2N1535 7-60 PMS Cc 100) 65 R 40 4.0K 2.9 4.04 2N420A G | P | 2N1537 7-60 PMS Cc 100} 90 R 40 4.0A 2.0 4.0A 2N422 G]P }2N651 6-20 LNA A 85] 35 0 2N422A G|P LNA A 100| 35 0 30 5M [1B 2N424 S |N | 2N3446 7-111 |] LPA c 200 R 12 60 1.0A 2N424A 5S [N LPA Cc 200 R 12 60 1.04 1.04 OM }T 2N425 GIP MSA A 85; 30 0 20 40 LOOM -5M |B 2N426 G{P MSA A 85| 30 0 30 60 100M -OM 1B 2N427 GIP MSA A 85] 30 0 40 80 150M -OM 1B 2N428 GIP MSA A 85] 30 0 60 200M 10M |B 2N428A GIP MSS A 100} 30 0 80 0.24 10M [B 2N438 GItn MSS A 85} 30 0 20 50M 2.5M )B 2N438A GIN MSS A 85] 30 0 20 50M 2.5M |B 2N439 GIN MSS A 85] 30 0 30 50M 5.0M |/B 2N439A GIN MSS A 85} 30 0 30 50M 5.0M [B 2N440 GIN MSS A 85} 30 0 40 50M 10M |B 2N440A GIN MSS A 85} 30 0 40 50M 50M 10M |B 2NG41 G {iP 7-36 LPA Cc 95] 40 Ss 20 40 5.0A 2N4G42 GIP 7-36 LPA c 95| 50 Ss 20 40 5.0A 2N443 G[P 7-36 LPA Cc 95] 60 s 20 40 5.0A 124 2N444 GIN AFA A 85] 15 0 O.5M |B 2N444A GIN AFA A 100} 40 0 20 40 20M 15 O.5M 1B 2N445 GIN AFA A 85 15 0 O.5M 1B 2N445A GIN AFA A 100] 30 a 40 |160 20M 35 2.0M |B 2N446 GIN MSA A 85] 15 0 5.0M |B 2N446A GIN MSA A 100] 30 0 60 [250 20M 60 5.0M |B 2NG47 GIN MSA A 851 15 0 5.0M |B 2N4G47A GEN MSA A 100) 30 0 80 | 300 20M 85 E 9.0M IB 2N447B GIN MSA A 100] 25 0 80 |300 20M 150 E 9.0M IB 2N448 GIN RFC A 85| 15 Oo [8.0 51 1.0M 2N449 GIN RFC A 85] 15 0 34 1.0M 2N450 GIP HSA A 85} 20 0 30 10M 0.2 10M .OM |B 2N456 G|P [2N456A 7-39 LPA Cc 95| 40 x 1.0 5.0A 2N456A4 G\P 7-39 LPA c 40 Q 30 90 5.04 0.5 5.04 4,OK 1E 2N456B G |P )2N1553 7-67 LPA Cc 100; 40 0 30 90 5.0A 0.5 5.0A 200K |T 2N457 GIP |2N457A 7-39 LPA 95; 60 x 1.0 5.04 2N457A G|P 7-39 LPA Cc 60 0 30 90 5.0A 0.5 5.0A 4,0K |E 2N457B G|P )2N1553 7-67 LPA. Cc 100} 60 0 30 90 5.048 0.5 5.0A 200K |T 2N458 G}P |2N458A 7-39 LPA 95] 80 x 1.0 5.0A 2N458A G iP 7-39 LPA Cc 80 0 30 90 5.0A 0.5 5.04 4,0K |B 2N458B G UP [2N1555 7-67 LPA Cc LOO, 80 Q 30 90 5 OA 0.5 5.04 200K {T 2N459 G]P 7-35 PMS Cc 100} 60 20 70 2.0A 1.0 2.0A 5.0K jE 2N459A GIP 7-35 PMS c 110] 105 Qo 40 70 2.0A 0.3 2.0A 5.0K |E 2N460 GIP 6-14 AFA A 100] 45 16 32 2N461 GIP 6-14 AFA A 100) 45 32 |100 2N462 GIP BMS A 75} 40 20 200M 500K [BR 2N463 G {P |2N1551 7-67 LPA c 100] 60 20 60 2.04 4,0K |E 2N464 G/P 6-15 AFA A 85| 45 0 2NG665 GP 6-15 AFA A 85] 45 0 2N466 GIP 6-15 AFA A 85| 35 0 2N467 G|P 6-15 AFA A 85| 35 0 2N469 GIP SPP A 7516.0 190 1,0M 2N469A GTP SPP A 85| 20 R 30 E 2N470 S |[N RFA A 200] 15 0 1.5 5.0M 10 E 8.0M |T 2N471 S |N AFA A 200} 30 0 1.5 5.0M 10 E 8.0M |T 2N471A S yN AFA A 200) 30 0 1.0 5.0M 10 E 8.0M IT 2N472 S |[N RFA 200} 45 0 1.5 5.0M LO E 8.0M {T 2N472A4 S [WN AFA A 200] 45 0 1.0 5.0M 10 E 8.0M |T 2N473 S |N AFA A 200} 15 0 1.5 5.0M 20 E 8.0M {T 2NG74 S$ |N AFA A 200) 30 0 1.5 5.0M 20 E 8.0M |T 2N474A Ss {[N AFA A 200} 30 0 10 1.0 5.0M 20 E 8.0M |T 2N475 Ss |N AFA A 200] 45 (6) 1.5 5.0M 20 E 8.0M |T 2N475A S |N AFA A 200| 45 a 10 1.0 5.0M 20 E 8.0M |T 2N476 Ss ]N APA A 200) 15 0 1.5 5.0M 30 E 12M |T 2N477 S |N AFA A 200; 30 0 1.5 5.0M 30 E 12M |T 2N478 Ss [N RFA A 200] 15 0 1.5 5.0M 40 E 20M jT 2N479 S [N RFA A 200] 30 Q 1.5 5.0M 49 EB 20M |T 2N479A S IN AFA A 200] 30 0 10 1.0 5.0M 40 E 20M IT 2N480 Ss |N RFA A 200] 45 0 1.5 5.0M 40 E 20M |T 2N480A S IN AFA A 200] 45 0 10 1.0 5.0M 40 E 20M !T 2N481L G |P RFA A 85) 12 is) 2N482 G |P RFA A 85] 12 0 2N483 G {P RFA A 85] 12 0 2N484 GaP RFA A 85}| 12 0 2N485 G \P RFA A 85) 12 0 2N486 G ||P RFA A 85 12 0 2N487 G {P AFC A 85] 18 R 20 1.0M 10 10M {T | 1-106Germanium Milliwatt Transistors - GERMANIUM MILLIWATT TRANSISTORS This line of low-frequency, low-power transistors consists of a wide selection of highly reliable germanium PNP devices designed for general] purpose switching, amplifier, and control applications. The line is generally characterized by devices having a power rating to 225 mW, a maximum operating temperature range from -65C to +100C, anda typical cutoff frequency (Eo) to 8 MHz. QUICK SELECTION GUIDE FOR AMPLIFIER / OSCILLATOR AND SWITCHING APPLICATIONS TO 20 KILOCYCLES The following transistors merit first consideration within the specified gain- voltage groups. All of the specified devices have collector power dissipation ratings (P,) of 150-225 mW, and a maximum operating junction temperature of 100C. MINIMUM TRANSISTOR VOLTAGE RATING; Veen (R = 10k) OE AN RENT (Mee) 12-24 25-39 40-49 50-60 20 2N524 MAQ10 (@) 2N2042 30 2N322 2N525 2N1924 2N1191 G@) 2N1186 40 2N323 2N526 2N1008A Gd) @ 2N1008B @) @) 2N1008 @) @) 2N1192 (@) 2N1925 2N2043 60 2N324 2N527 2N1926 . 2N1705 2N1175 90 2N467 2N1193 (4) 2N508 2N2171 2N1188 MA1706 2N3427 130 MAL1707 2N3428 180 MA1708 2N1194 (1) __ MA1702 @ Small Signal Current Gain hg, @ Vero @ Vers 6-3KW ,]], WNW AACATAi Wn As Germanium Milliwatt Transistors COMPLETE NUMERICAL-ALPHABETICAL LISTING MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS MILITARY VceR hre @ Vee & Ic fab and Type Po | Ta |Vcso] (R= 10k)! Ic typ Hekel mW C | volts volts mA min max volts mA MHz 2N319 225 | 100| | 20 500 | 25 42 1 | 20 | 1.0 2N320 225 | 100| | 20 500 | 34 65 1 | 20 | 1.5 2N321 225 | 100| | 20 300 | 53 | 121 1 | 20 | 2.0 2N322 225 | 100| | 18 500 | 34 65 1 | 20 | 1.0 2N323 225 | 100] | 18 500 | 53 | 121 1 | 20 | 15 2N324 225 | 100; | 18 500 | 72 198 1 | 20 | 2.0 2N331 200 | 100| 30|Vgp=iz| 200 | 30 70 6 1 }1.5 |JAN 2N331 2N381 225 | 100| 50| 25 400 | 35 65 1 | 20 |3 2N382 225 | 100] 50| 25 400 | 60 95 1 | 20 |4 2N383 225 | 100] 50] 25 400 | 75 {120 1 | 20 |5 2N398 50 | 85 | 105 | Vp=105 | 100 | 20 .35 | 5 |1.0 [USN 2N398 2n308a | 150 | 100 | 105 | Vyz=105 | 200 | 20 35 1 5 | 1. 2N460 225 | 100| 45| $5 400 | 31 |200 6 1Q@)\ 4 2N461 225 | 100] 45] 35 400 | 0.94 , [0.972 | 6 179) 1.2 USAF 2N461 2N464 200 | 100] 45] 40 100 | 14 _ 6 1 | 1.0 2N465 200 | 100} 45} 30 100 | 27 _ 6 1 |15 \uSA 2N465 2N466 200 | 100 | 35| 20 100 | 56 _ 6 1 [2.0 [JAN 2N466 2N467 200 | 100| 35| 15 100 | 112 _ 6 1 12.5 |USA 2N467 2N508 225 | 100| | 18 500 | 99 ~=*/198 1 | 20 | 2.5 g 2N524 225 | 100} | 30 500 | 25 42 1 | 20 | 0.86) [2N524a 2N525 225 | 100| | 30 500 | 34 65 1 | 20 | 1.06) |2N595A 2N526 225 | 100; | 30 500 | 53 90 1 | 2 1130 NA 2N527 225 | 100; | 30 500 | 72 {121 1 | 20 | 1.5@ |2N597A 8 2N650 200 | 100] 45] 30 500 | 30 70 6 1 11.5 |2N650A USN 2N650A 2N651 200 | 100] 45 | 30 500 | 50 {120 6 1 [2.0 |2ane51A @ USN 2N651A 2N652 200 | 100 | 45| 30 500 | 100 =: {225 6 1 |2.5 lones2a USN 2N652A 2N653 200 | 100] 301 25 250 | 30 70 6 1 11.5 2N654 200 | 100| 30] 25 250 | 50 |125 6 1 | 2.0 2N655 200 | 100 | 30| 25 250 | 100 |250 6 1 | 2.5 2N1008 | 200 | 100] 20] 20 300 | 40 hge | 150 5 | 10 | 2n1008A | 200 | 100} 40/ 40@ | 300 | 40 hfe |150 5 | 10 2n1008B | 200 | 100] 60! 60@ | 300 | 40 hg | 150 5 10 | 2n1175 | 225 | 100| | 25 500 | 70 |140 1 | 20 }156 2N1185 | 200 | 100] 45] 30 500 | 190 |400 6 1 |3.0 2n1186 | 200 | 100| 60] 45 500 | 30 70 6 1/15 2N1187 | 200 | 100| 60| 45 500 | 50 |120 6 1 | 2.0 2n1188 | 200 | 100| 60| 45 500 | 100 [225 6 1 [2.5 2Niis9 | 200 | 100 | 45 | 30 500 | 60 _ 1 | 10@ 3.5 2N1190 | 200 | 100| 45| 30 500 | 100 1 1003) 4.5 2N1191 | 200 | 100| 40] 25 200 | 30 70 6 1 115 2n1192 | 200 | 100| 40] 25 200 | 50 125 6 1 | 2.0 6-42N464 thru 2N467 2N465 USA/JAN 2N466 JAN 2N467 USA/JAN Germanium Milliwatt Transistors Vos =45V hy, - to 112 (min) fa, - to 1.2 MHz (typ) PNP germanium transistor for general purpose appli- cations in the audio-frequency range. CASE 31 (TO-5) All leads isolated \ MAXIMUM RATINGS Rating Symbol | 2N464 | 2N4G5 | 2N466 | 2N467 | Unit Collector-Base Voltage Vop 45 45 35 35 Volts Collector-Emitter Voltage Vor 40 30 20 15 Volts Emitter -Base Voltage Ves a - 12 _> Volts DC Collector Current In mA <______- 00 _________ Max. Junction & Storage Temperature T,; and c Tetg <.______ 100 ______ Collector Dissipation in Free Air Ph mW =_ 200 _____ Derate above 25C a - 2.67 __> | mw/Cc Thermal Resistance, Junction to Air 814 <+_ 0.375 _____ C/mW ELECTRICAL CHARACTERISTICS (Ta = 25C unless otherwise noted) Characteristic Symbol Min | Typ | Max Unit Collector-Emitter Breakdown Voltage BV CER Vde (Ig = 0.6 mAde, R,_= 10 K ohms) 2N464 40 | - 2N465 30 - - 2N466 20 | - - 2N467 15 = - Collector- Base Cutoff Current I uAdc CBO (V., = 20 Vdc) - 6 15 CB Small Signal Current Gain Cutoff Frequency top MHz Von = 6 Vdc, T= 1 mAdc) 2N464 - 0.7 - 2N465 - 0.8 - 2N466 - 1.0 - 2N467 - 1.2 - Small Signal Current Gain hee - Vor = 6 Vdc, lp = 1.0 mAdc, f = 1 kHz) 2N464 14 26 - 2N465 27 45 - 2N466 56 90 - 2N467 112 180 - 6-15Germanium Milliwatt Transistors 2N464 thru 2N467 (continued) ELECTRICAL CHARACTERISTICS (continued) Characteristic Symbol Min | Typ | Max Unit Small Signal Input Impedance ie Ohms WV og = 6 Vde, I, = 1.0 mAde, f = 1 kHz) 2N464 . - 900 | - 2N465 - 1400 | 2N466 - 3000 | 2N467 - 5500 | Small Signal Power Gain G dB (Vog = 6 Vde, I, = 1.0 mAde, f= 1 kHz, matched) 2N464 - 40 | - 2N465 - 42 | - 2N466 - 44 | 2N467 ~ 45 | - Noise Figure NF dB (Wop = 2.5 Vde, I, = 0.5 mAdc, f= 1 kHz , R= 10 Kohms, - - 22 Af = 1 He POWER-TEMPERATURE DERATING CURVE SMALL SIGNAL CURRENT GAIN versus TEMPERATURE 200 800 180 600 2 160 400 = 140 = a ~ 200 = 120 ow | 3 z 100 = 100 = S 80 a 80 5 0 B a 2 60 x 40 = eS 40 20 20 0 0 0 10 20 30 40 50 60 70 80 90 100 ~60 40 20 0 20 40 60 80 AMBIENT TEMPERATURE C JUNCTION TEMPERATURE C Input Current versus Emitter-Drive Voltage Small Signal Current Gain versus Collector Current {common emitter 1 tz) 200 Veg = 1 VOLT 160 120 80 BASE CURRENT (i,) MILLIAMPERES 2N465 SMALL SIGNAL CURRENT GAIN (h,,) 40 2N464 0 0 05 10 .15 .20 25 .30 .35 40 .45 0 10 20 30 40 50 60 70 80 90 100 BASE TO EMITTER VOLTAGE (Vis) VOLTS COLLECTOR CURRENT (J_) MILLIAMPERES 6-16