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Pacific Silicon Sensor Series 9 Data Sheet
Part Description AD1100-9-TO52-S1
Order # 06-018
PIN 1 Ø 2.54
3 PL
ANODE
PIN 3
CATHODE
12.7
3 PL
PIN CIRCLE
±1
PIN 4
CASE
ACTIVE AREA: 1.00 mm
(1.13 mm DIA)
2
BACKSIDE VIEW
Ø 5.40 92°
VIEWING
ANGLE
Ø 3.00
Ø 4.70
3.60
FRONTSIDE VIEW
Ø0.46
2.70
FEATURES DESCRIPTION APPLICATIONS
• ∅ 1.13 mm active area
• Low slope multiplication curve
• High speed, low noise
• NIR enhanced
1.0 mm2 High Speed, Low Noise Avalanche Photodiode
with N on P construction. Hermetically packaged in a
TO-52-S1 with a clear borosilicate glass window cap.
• High speed optical
communications
• Laser range finder
• Medical equipment
• High speed photometry
ABSOLUTE MAXIMUM RATING SPECTRAL RESPONSE at M = 100
SYMBOL PARAMETER MIN MAX UNITS
TSTG Storage Temp -55 +125 °C
TOP Operating Temp -40 +100 °C
TSOLDERING Soldering Temp
10 seconds +260 °C
Electrical Power
Dissipation @ 22°C - 100 mW
Optical Peak Value,
once for 1 second - 200 mW
IPH (DC) Continuous Optical
Operation - 250 µA
IPH (AC) Pulsed Signal Input
50 µs “on” / 1 ms “off” - 1 mA
ELECTRO-OPTICAL CHARACTERISTICS @ 22 °C
SYMBOL CHARACTERISTIC TEST CONDITIONS MIN TYP MAX UNITS
ID Dark Current M = 100* --- 4.0 10 nA
C Capacitance M = 100* --- 3.0 --- pF
VBR Breakdown Voltage ID = 2 µA 180 240 --- V
Temperature Coefficient of VBR --- 1.55 --- V/K
Responsivity M = 100; = 0 V; λ = 905 nm 55 60
--- A/W
∆ƒ3dB Bandwidth -3dB --- 0.3 --- GHz
tr Rise Time M = 100 --- 1300 --- ps
Optimum Gain 40 60 ---
“Excess Noise” factor M = 100 --- 2.5 ---
“Excess Noise” index M = 100 --- 0.2 ---
Noise Current M = 100 --- 0.15 --- pA/Hz1/2
Max Gain 200 ---
---
NEP Noise Equivalent Power M = 100; λ = 905 nm --- 8.0 X 10-14 --- W/Hz1/2
* Measurement conditions: Setup of photo current 10 nA at M = 1 and irradiated by a 880 nm, 80 nm bandwidth LED. Increase the photo
current up to 1 µA, (M = 100) by internal multiplication due to an increasing bias voltage.
Disclaimer: Due to our policy of continued development, specifications are subject to change without notice.
400 500 600 700 800 900 1000 1100
0
10
20
30
40
50
60
70
RESPONSIVITY (A/W)
WAVELENGTH (nm)
H
o
R
S
C
O
M
P
L
I
A
N
T
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TYPICAL GAIN vs BIAS VOLTAGE QUANTUM EFFICIENCY for M = 100
1
10
100
1000
10000
10 30 50 70 90 110 130 150 170 190 210 230 250
GAIN
BIAS VOLTAGE (V)
400 500 600 700 800 900 1000 1100
QE
0.00
0.10
0.20
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
WAVELENGTH (nm)
DEVICE SCHEMATIC SUGGESTED CIRCUIT SCHEMATIC
PIN 1
PIN 4
PIN 3
BIAS SUPPLY VOLTAGE
CURRENT LIMITING RESISTOR
MIN. 0.1 µF CAPACITOR
CLOSEST TO APD
APD
DIODE, PROTECTIVE CIRCUIT
READ-OUT CIRCUIT OR
50 Ohm LOAD RESISTANCE
APPLICATION NOTES
• Current should be limited by a protecting resistor or current limiting IC inside the power supply.
• Use of low noise read-out IC.
• For high gain applications (M>50) bias voltage should be temperature compensated.
• For low light level applications, blocking of ambient light should be used.
HANDLING PRECAUTIONS:
• Soldering temperature - 260°C for 10 seconds max. The device must be protected against solder flux vapor.
• Minimum pin length - 2 mm
• ESD protection - Standard precautionary measures are sufficient.
• Storage - Store devices in conductive foam.
• Avoid skin contact with window.
• Clean window with Ethyl alcohol if necessary.
• Do not scratch or abrade window.
USA:
Pacific Silicon Sensor, Inc.
5700 Corsa Avenue, #105
Westlake Village, CA 91362 USA
Phone (818) 706-3400
Fax (818) 889-7053
Email: sales@pacific-sensor.com
www.pacific-sensor.com
Proud Members of the Silicon Sensor International AG Group of companies
International sales:
Silicon Sensor International AG
Peter-Behrens-Str. 15
D-12459 Berlin, Germany
Phone +49 (0)30-63 99 23 10
Fax +49 (0)30-63 99 23 33
Email: sales@silicon-sensor.de
www.silicon-sensor.de
