PRODUCT GATALOG S@treM cece nc N-CHANNEL ENHANCEMENT MOS FET. 4A00V . 3 . 3A . 1 . 8 Q ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL UNITS SDF 320 JAA Drain-source Volt.(1) VOSS 400 Vde SDF 320 JAB Caos 1 Ome) 21578" VOGR 400 Vde SDF 320 JDA Confinuous, 9 Ves 20 Vde Drain Current Continuous FEATURES (ie = 28C) . =3 dL ao SN SE Drain Current Pulsed(3) IDM 13 A @ RUGGED PACKAGE Total Power Dissipation PD 50 W @ HI-REL CONSTRUCTION Power Dissipation 0.4 We @ CERAMIC EYELETS: JAA, JAB Derating > 25C @LEAD BENDING OPTIONS Operating & Storage Temp. | TU/Tsig -SS TQ +150 c @ COPPER CORED 52 ALLOY PINS Thermal Resistance _ Rthue 2.5 C/W @LOW IR LOSSES Max.Lead temperature TL 300 C @ LOW THERMAL RESISTANCE oO RONAL MIL -S-19500 ELECTRICAL CHARACTERISTICS Te =25'c ({NGESS_OTHER- PARAMETER [SYMBOL] TEST CONDITIONS [MIN] TYP] MAX UNITS SCHEMAT IC Drain'source v(BR)DSS VGS=0V 400] | - Vv [TERMINAL CONNECTIONS} [SO 0 ID=250 WA G H Voltage |YGS(TH)|VDS=VGS_ I1D=250 pA |2.0] ~ 14.0] V ke 1]GATE [1] DRAIN |. |G0'* Source | jess |ves=s20 v | /100] na pe 2|[DRAIN | 2] SOURCE P 3tsou 3] GATE Zero Gate VDS=MAX.RATING VGS=0} - {| [250] HA RCE A Voltage Drain | IDSS [vpg=0.8 MAX.RATING | _ | _ loool ya STANDARD BEND JAA Current VGS=0.- TJ=125C CONFIGURATIONS StaTe Drain VES<10 V O JDA Resistance(l)-. RDS(ON)| 1D=1 8A ~}7 48 Forward Trans- VDS 2 50 V Conductance (2)| OFS | ips=1.BA 1.8] - | - |{S(o) Input Capacitance] CISS - 7|350] - pF neu , VGS=OV - VDS=25 V = = S 23 qeverge Transter| coee |e -0 Miz 4 ae i=. Capacitance _ CRSS [8.1] - pF Turn-On Delay |td(on) 0=200V RG=18.0 - ~ iS | ns i i : =3. = n - - nse Time tr (MOSFET switching times 20 ns urnrOrt DetoviteCorr tare eegential ty Ingepeny | | ~ 145 | ns , . 3 Fall Time tf - 7 20 ns D U" 1 2 Total Gate Charge] 3 (Gate-Source Plus| Qg - - 20 | nC 12 Gate-Drain} VGS=10V, ID=3.3A | (CUSTOM BEND OPTIONS AVAILABLE) Gate "Source | ags | onic charge ie secre] | - [3-3] ne Gate-Droi ally independent of the SOAR, [JAB | JERI | one PRtAPHRN | ae . arge . SOURCE-DRAIN DIODE RATINGS & CHARACT.Tc=25C (cae PARAMETER SYMBOL; TEST CONDITIONS MIN.| TYP.IMAX UNITS Source Current Ig |Modified MOSFET ~ | - 13.3] A (Body Diode) symbol showing the . Pulse Source : putegral reverse P-N junction recti- Gurnent (Body ISM |fier (See schematic)} - | | 13] A Diode Forward IF=3.3A VGS=O0V - Voltage (2) VSD | 1=335C - 1.8] V "ur Ree ee time | ine _[To=r25" C ~ [= [ooo] ns IF=3.3A Reverse Re- Jdds . ~ (CUSTOM BEND OPTIONS AVAILABLE) covery Charge | Grr |di/dt=100A/ 4S ~ 11.4 uC 2) Pulse test: Pulse Width <300nS, Duty Cycie <2%. REV. 10/93 3 TU = 25C to 150C. 3) Repetitive Rating: Pulse Width limited By Max.junction Temperature. A16