© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 11 1Publication Order Number:
2N3442/D
2N3442
High−Power Industrial
Transistors
NPN silicon power transistor designed for applications in industrial
and commercial equipment including high fidelity audio amplifiers,
series and shunt regulators and power switches.
Features
•Collector −Emitter Sustaining Voltage − VCEO(sus) = 140 Vdc (Min)
•Excellent Second Breakdown Capability
•Pb−Free Package is Available*
MAXIMUM RATINGS (Note 1)
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO 140 Vdc
Collector−Base Voltage VCB 160 Vdc
Emitter−Base Voltage VEB 7.0 Vdc
Collector Current − Continuous
− Peak IC10
15 Adc
Base Current − Continuous
− Peak IB7.0
−Adc
Total Device Dissipation @ TC = 25_C
Derate above 25_C (Note 2) PD117
0.67 W
W/_C
Operating and Storage Junction
Temperature Range TJ, Tstg −65 to +200 _C
THERMAL CHARACTERISTICS
Characteristics Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 1.17 _C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Indicates JEDEC Registered Data.
2. This data guaranteed in addition to JEDEC registered data.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
10 AMPERE
POWER TRANSISTOR
NPN SILICON
140 VOLTS − 117 WATTS
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MARKING DIAGRAM
Device Package Shipping
ORDERING INFORMATION
2N3442 TO−204 100 Units / Tray
2N3442G TO−204
(Pb−Free) 100 Units / Tray
2N3442G
AYWW
MEX
TO−204AA (TO−3)
CASE 1−07
STYLE 1
2N3442 = Device Code
G = Pb−Free Package
A = Assembly Location
Y = Year
WW = Work Week
MEX = Country of Origin
2N3442
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2
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Characteristic
ÎÎÎÎÎ
ÎÎÎÎÎ
Symbol
ÎÎÎÎ
ÎÎÎÎ
Min
ÎÎÎ
ÎÎÎ
Max
ÎÎÎÎ
ÎÎÎÎ
Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Sustaining Voltage
(IC = 200 mAdc, IB = 0)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VCEO(sus)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
140
ÎÎÎ
Î
Î
Î
ÎÎÎ
−
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = 140 Vdc, IB = 0)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
ICEO
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
−
ÎÎÎ
Î
Î
Î
ÎÎÎ
200
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector Cutoff Current
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 140 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
ICEX
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
−
−
ÎÎÎ
Î
Î
Î
ÎÎÎ
5.0
30
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Emitter Cutoff Current
(VBE = 7.0 Vdc, IC = 0)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
IEBO
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
−
ÎÎÎ
Î
Î
Î
ÎÎÎ
5.0
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ON CHARACTERISTICS (Note 3)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DC Current Gain
(IC = 3.0 Adc, VCE = 4.0 Vdc)
(IC = 10 Adc, VCE = 4.0 Vdc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
Î
ÎÎÎ
Î
ÎÎÎÎÎ
hFE
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
20
7.5
ÎÎÎ
Î
Î
Î
Î
Î
Î
ÎÎÎ
70
−
ÎÎÎÎ
Î
ÎÎ
Î
Î
ÎÎ
Î
ÎÎÎÎ
−
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Collector−Emitter Saturation Voltage
(IC = 10 Adc, IB = 2.0 Adc)
ÎÎÎÎÎ
ÎÎÎÎÎ
VCE(sat)
ÎÎÎÎ
ÎÎÎÎ
−
ÎÎÎ
ÎÎÎ
5.0
ÎÎÎÎ
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Base−Emitter On Voltage
(IC = 10 Adc, VCE = 4.0 Vdc)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
VBE(on)
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
−
ÎÎÎ
Î
Î
Î
ÎÎÎ
5.7
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Current−Gain − Bandwidth Product (Note 4)
(IC = 2.0 Adc, VCE = 4.0 Vdc, ftest = 40 kHz)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
fT
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
80
ÎÎÎ
Î
Î
Î
ÎÎÎ
−
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
kHz
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Î
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
Small−Signal Current Gain
(IC = 2.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)
ÎÎÎÎÎ
Î
ÎÎÎ
Î
ÎÎÎÎÎ
hfe
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
12
ÎÎÎ
Î
Î
Î
ÎÎÎ
72
ÎÎÎÎ
Î
ÎÎ
Î
ÎÎÎÎ
−
3. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2.0%.
4. fT = |hfe| • ftest
1.0
00 25 50 75 100 125 150 175 200
Figure 1. Power Derating
TC, CASE TEMPERATURE (°C)
/PD(MAX)
, POWER DISSIPATION (NORMALIZED)
0.8
0.6
0.4
0.2
PD
2N3442
http://onsemi.com
3
ACTIVE REGION SAFE OPERATING AREA INFORMATION
There are two limitations on the power−handling
ability of a transistor: average junction temperature and
second breakdown. Sa fe o perat ing area curves indicate
IC − VCE limits of the transistor that must be observed
for reliable operation, i.e., the transistor must not be
subjected to greater d issipation t han t he c urves i ndicate.
The data of Figure 2 is based on TJ(pk) = 200_C; TC
is variable depending on conditions. At high case
temperatures, thermal limitations will r educe the power
that can be handled to values less than the limitations
imposed by second breakdown.
20
2.0
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
10
7.0
5.0
3.0
2.0
1.0
0.7
0.2 5.0 20 100 200
IC, COLLECTOR CURRENT (AMP)
CURRENT LIMIT
THERMAL LIMIT @ TC = 25°C
SINGLE PULSE
SECOND BREAKDOWN LIMIT
dc
1.0 ms
10 ms
0.5
0.3
3.0 7.0 10 30 50 70
30 ms
50 ms
100 ms
TJ = 200°C
100 ms
Figure 2. 2N3442
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS
)
400
0.1
Figure 3. DC Current Gain
IC, COLLECTOR CURRENT (AMP)
4.0 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 10
40
20
100
60
hFE, DC CURRENT GAIN
TJ = 150°C
25°C
−55 °C
VCE = 4.0 V
6.0
10
200
7.0
Figure 4. Collector−Saturation Region
1.4
2.0
IB, BASE CURRENT (mA)
0
5.0 10 20 50 100 200 500 1.0k 2.0k
1.0
0.8
0.6
0.4
IC = 1.0 A
TJ = 25°C
4.0 A 8.0 A
1.2
0.2
2.0 A
2N3442
http://onsemi.com
4
PACKAGE DIMENSIONS
TO−204 (TO−3)
CASE 1−07
ISSUE Z
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. ALL RULES AND NOTES ASSOCIATED WITH
REFERENCED TO−204AA OUTLINE SHALL APPLY.
DIM MIN MAX MIN MAX
MILLIMETERSINCHES
A1.550 REF 39.37 REF
B−−− 1.050 −−− 26.67
C0.250 0.335 6.35 8.51
D0.038 0.043 0.97 1.09
E0.055 0.070 1.40 1.77
G0.430 BSC 10.92 BSC
H0.215 BSC 5.46 BSC
K0.440 0.480 11.18 12.19
L0.665 BSC 16.89 BSC
N−−− 0.830 −−− 21.08
Q0.151 0.165 3.84 4.19
U1.187 BSC 30.15 BSC
V0.131 0.188 3.33 4.77
A
N
E
C
K
−T− SEATING
PLANE
2 PLD
M
Q
M
0.13 (0.005) Y M
T
M
Y
M
0.13 (0.005) T
−Q−
−Y−
2
1
UL
GB
V
H
STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
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