Features
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Optimum Technology
Matching® Applied
GaAs HBT
InGaP HBT
GaAs MESFET
SiGe BiCMOS
Si BiCMOS
SiGe HBT
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Si CMOS
Si BJT
GaN HEMT
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Product Description
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
RF MEMS
SGB-2433(Z)
DC to 4GHZ ACTIVE BIAS GAIN BLOCK
RFMD’s SGB-2433 is a high performance SiGe HBT MMIC amplifier utilizing a Dar-
lington configuration with an active bias network. The active bias network provides
stable current over temperature and process Beta variations. Designed to run
directly from a 3Vto5V supply the SGB-2433 does not require a drop resistor as
compared to typical Darlington amplifiers. This robust amplifier features a Class 1C
ESD rating, low thermal resistance, and unconditional stability. The SGB-2433 prod-
uct is designed for high linearity 3V gain block applications that require small size
and minimal external components. It is on chip matched to 50Ω and an external
bias inductor choke is required for the application band.
VCC
NC
NC
GND
NC
NC
NC
Vbias
NC
NC
NC
RFIN
NC
RFOUT
NC
NC
Active
Bias
High Reliability SiGe HBT
Technology
Robust Class 1C ESD
Simple and Small Size
P1dB=6.9dBm at 1950MHz
IP3=18.0dBm at 1950MHz
Low Thermal
Resistance=221C/W
Applications
3V Battery Operated Applica-
tions
LO Buffer Amp
RF Pre-Driver and RF Receive
Path
EDS-103083 Rev H
Preliminary
9
RFMD Green, RoHS Compliant, Pb-Free (Z Part Number)
Package: 3 x3 QFN, 16-Pin
SGB-2433(Z)
DC to 4GHz
Active Bias
Gain Block
Parameter Specification Unit Condition
Min. Typ. Max.
Small Signal Gain 19.1 dB 850MHz
15.7 17.2 18.7 dB 1950MHz
16.2 dB 2400 MHz
Output Power at 1dB Compression 7.7 dBm 850MHz
5.4 6.9 dBm 1950MHz
6.2 dBm 2400MHz
Output Third Order Intercept Point 19.5 dB 850MHz
16.0 18.0 dB 1950MHz
18.0 dB 2400MHz
Noise Figure 3.5 4.5 dB 1950MHz
Frequency of Operation DC 4000 MHz
Current, IC21.0 25.0 29.0 mA
Input Return Loss 10.0 13.4 dB 1950MHz
Output Return Loss 10.0 13.6 dB 1950MHz
Thermal Resistance 221 °C/W junction to backside
Test Conditions: Z0=50Ω, VCC=3V, IC=25mA, T=30°C
2 of 8
Preliminary
EDS-103083 Rev H
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SGB-2433(Z)
Detailed Performance Table: VCC =3V, IC=25mA, T=25°C, Z=50Ω
Simplified Device Schematic
Absolute Maximum Ratings
Parameter Rating Unit
Current (lC total) 60 mA
Max Device Voltage (VD)5V
Max RF Input Power 20 dBm
Power Dissipation 0.2 W
Max Junction Temperature (TJ) 150 °C
Operating Temperature Range (TL) -40 to + 85 °C
Max Storage Temperature -40to+150 °C
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Bias Conditions should also satisfy the following expression:
IDVD<(T
J-TL)/RTH, j-l
Parameter Unit 100
MHz
500
MHz
850
MHz
1950
MHz
2400
MHz
3500
MHz
Small Signal Gain (G) dB 19.7 19.5 19.1 17.2 16.2 14.0
Output 3rd Order Intercept Point (OIP3) dBm 20.0 19.5 18.0 18.0
Output Power at 1dB Compression (P1dB) dBm 8.3 7.7 6.9 6.2
Input Return Loss (IRL) dB 25.0 19.9 17.1 13.4 12.7 10.5
Output Return Loss (ORL) dB 20.5 18.9 17.1 13.6 13.1 13.0
Reverse Isolation (S12) dB 22.4 22.6 22.9 23.7 23.9 24.5
Noise Figure (NF) dB 3.8 3.2 3.2 3.5 3.9 4.3
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
16
1
4
58
9
12
13
15 14
2
3
11
10
67
Active
Bias
3 of 8
Preliminary
EDS-103083 Rev H
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SGB-2433(Z)
Evaluation Board Data (VCC=VBIAS=3.0V, IC=25mA) Bias Tee substituted for DC feed inductor (L1)
G ain vs Frequency
14.0
15.0
16.0
17.0
18.0
19.0
20.0
21.0
0.40.91.41.92.4
Frequency (GH z)
Gain (dB)
+25c
+85c
-40c
O IP3 vs. Frequency
10.0
12.0
14.0
16.0
18.0
20.0
22.0
0.40.91.41.92.4
Frequency (GH z)
OIP3 (dBm)
+25c
+85c
0c
-20c
-40c
P1dB vs. Frequency
0.0
1.0
2.0
3.0
4.0
5.0
6.0
7.0
8.0
9.0
10.0
0.40.91.41.92.4
Frequency (GH z)
P1dB (dBm)
+25c
+85c
0c
-20c
-40c
Noise Figure vs. Frequency
0.0
1.0
2.0
3.0
4.0
5.0
6.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Frequency (GHz)
Noise Figure (dB)
+25c
+85c
-40c
Ic vs. Temperature
0.0160
0.0180
0.0200
0.0220
0.0240
0.0260
0.0280
0.0300
+ 85c +25c 0c -20c -40c
Temperature
Ic (mA)
Current vs. Voltage
0.000
0.005
0.010
0.015
0.020
0.025
0.030
0.035
0.040
2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8
Vc (Vo lts)
Ic (A)
4 of 8
Preliminary
EDS-103083 Rev H
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SGB-2433(Z)
Evaluation Board Data (VCC=VBIAS=3.0V, IC=25mA) Bias Tee substituted for DC feed inductor (L1) cont.
l S21 l vs. Freq uency
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
22.0
0.0 1.0 2.0 3.0 4.0 5.0 6.0
Frequency (GHz)
S21 (dB)
+25c
+85c
-40c
l S12 l vs. Freq uency
-27.0
-26.0
-25.0
-24.0
-23.0
-22.0
-21.0
-20.0
0.0 1.0 2.0 3.0 4.0 5.0 6.0
Frequency (G Hz)
S12 (dB)
+25c
+85c
-40c
l S22 l vs. Frequency
-25.0
-20.0
-15.0
-10.0
-5.0
0.0
0.0 1.0 2.0 3.0 4.0 5.0 6.0
Frequency (GHz)
S22 (dB)
+25c
+85c
-40c
l S11 l vs. Frequency
-30.0
-25.0
-20.0
-15.0
-10.0
-5.0
0.0
0.01.02.03.04.05.06.0
Frequency (GHz)
S11 (dB)
+25c
+85c
-40c
5 of 8
Preliminary
EDS-103083 Rev H
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SGB-2433(Z)
Recommended Land Pattern
Dimensions in millimeters (inches)
Recommended PCB Soldermask for Land Pattern
Pin Function Description
1, 2,
4, 6,
7, 8,
11,
12, 14
NC These are no connect pins. Leave them unconnected on the PC board.
3RF IN RF input pin. A DC voltage should not be connected externally to this pin
5GND
An extra ground pin that is connected to the backside exposed paddle. Connection is optional.
10 RF OUT RF Output pin. Bias is applied to the Darlington stage thru this pin.
13 VBIAS This pin sources the current from the active bias circuit. Connect to pin 10 thru an inductor choke.
16 VCC This is Vcc for the active bias circuit.
Back-
side
GND The backside exposed paddle is the main electrical GND and requires multiple vias in the PC board to GND. It is also the
main thermal path.
1.58 [0.062]
0.50 [0.020]
0.26 [0.010]
0.38 [0.015]
0.29 [0.011]
0.21 [0.008]
1.58 [0.062]
0.75 [0.030] Ø0.38 [Ø0.015]
0.005 CHAMFER
(8PL) Plated Thru (4PL)
1.20 [0.047]
0.50 [0.020] 0.25 [0.010]
1.20 [0.047]
0.46 [0.018]
0.53 [0.021]
3.17 [0.125]
6 of 8
Preliminary
EDS-103083 Rev H
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SGB-2433(Z)
Package Drawing
Dimensions in millimeters (inches)
Refer to drawing posted at www.rfmd.com for tolerances.
Typical Evaluation Board Schematic for 3.0V
RFIN RFOUT
VCC
NC
NC
GND
Option
NC
NC
NC
Vbias
NC
NC
NC
RFIN
NC
RFOUT
NC
NC
Vcc
C1 C2
C3
C4
L1
7 of 8
Preliminary
EDS-103083 Rev H
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SGB-2433(Z)
Evaluation Board Layout and Bill of Materials
Board material GETEK, 31mil thick, Dk=4.2, 1oz copper.
Component Values By Band
*C4 is optional depending on application and filtering. Not required for SGB device operation.
Note: The amplifier can be run from a 5V supply by simply inserting a 82Ω resistor in series with VCC.
Part Identification
The part will be symbolized with an “SGB2433” for Sn/Pb plating or “SGB24Z” for RoHS green compliant product. Marking des-
ignator will be on the top surface of the package.
Ordering Information
Designator 500MHz 850MHz 1950MHz 2400MHz
C3 1000pF 1000pF 1000pF 1000pF
C4* 1uF 1uF 1uF 1uF
C1, C2 220pF 68pF 43pF 22pF
L1 68nH 33nH 22nH 18nH
Part Number Reel Size Devices/Reel
SGB-2433 13” 3000
SGB-2433Z 13” 3000
C3
C2C1
L1
C4
8 of 8
Preliminary
EDS-103083 Rev H
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SGB-2433(Z)
