FGL60N100BNTD NPT-Trench IGBT General Description Features Trench insulated gate bipolar transistors (IGBTs) with NPT technology show outstanding performance in conduction and switching characteristics as well as enhanced avalanche ruggedness. These devices are well suited for Induction Heating ( I-H ) applications * * * * High Speed Switching Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A High Input Impedance Built-in Fast Recovery Diode Application Micro- Wave Oven, I-H Cooker, I-H Jar, Induction Heater, Home Appliance C G TO-264 G C Absolute Maximum Ratings Symbol VCES VGES IC ICM (1) IF IFM PD TJ Tstg TL E E TC = 25C unless otherwise noted Description Collector-Emitter Voltage Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds @ TC = 25C @ TC = 100C @ TC = 100C @ TC = 25C @ TC = 100C FGL60N100BNTD 1000 25 60 42 200 15 200 180 72 -55 to +150 -55 to +150 Units V V A A A A A W W C C 300 C Notes : (1) Repetitive rating : Pulse width limited by max. junction temperature Thermal Characteristics Symbol RJC(IGBT) RJC(DIODE) RJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient (c)2008 Fairchild Semiconductor Corporation FGL60N100BNTD Rev.A2 Typ. ---- Max. 0.69 2.08 25 Units C/W C/W C/W www.fairchildsemi.com http://store.iiic.cc/ FGL60N100BNTD IGBT Symbol TC = 25C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units 1000 -- -- V --- --- 1.0 500 mA nA 4.0 --- 5.0 1.5 2.5 7.0 1.8 2.9 V V V ---- 6000 260 200 ---- pF pF pF -------- 140 320 630 130 275 45 95 ---250 350 --- ns ns ns ns nC nC nC Typ. 1.2 1.8 1.2 0.05 Max. 1.7 2.1 1.5 2 Units V V s A Off Characteristics BVCES ICES IGES Collector Emitter Breakdown Voltage VGE = 0V, IC = 1mA Collector Cut-Off Current G-E Leakage Current VCE = 1000V, VGE = 0V VGE = 25, VCE = 0V On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 60mA, VCE = VGE IC = 10A, VGE = 15V IC = 60A, VGE = 15V Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE=10V, VGE = 0V, f = 1MHz Switching Characteristics td(on) tr td(off) tf Qg Qge Qgc Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCC = 600 V, IC = 60A, RG = 51, VGE=15V, Resistive Load, TC = 25C VCE = 600 V, IC = 60A, VGE = 15V , TC = 25C Electrical Characteristics of DIODE T C Symbol Parameter VFM Diode Forward Voltage trr IR Diode Reverse Recovery Time Instantaneous Reverse Current = 25C unless otherwise noted Test Conditions IF = 15A IF = 60A IF = 60A di/dt = 20 A/us VRRM = 1000V FGL60N100BNTD Rev.A2 Min. ----- www.fairchildsemi.com http://store.iiic.cc/ FGL60N100BNTD Electrical Characteristics of IGBT 10V Collector Current, I C [A] Collector Current, I C [A] 90 20V Common Emitter o TC = 25 C 15V 9V 150 100 8V FGL60N100BNTD 200 Common Emitter VGE = 15V 80 o TC = 25 C 70 o TC = 25 C o TC = 125 C ------ 60 o TC = 125 C 50 40 30 50 20 7V 10 VGE = 6V 0 0 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] 0 1 2 3 4 Collector-Emitter Voltage, VCE [V] Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteristics Common Emitter O T C= - 40 C 3 Collector-Emitter Voltage, VCE[V] Collector-Emitter Voltage, VCE [V] 10 Common Emitter VGE=15V 80A 60A 2 30A IC=10A 1 8 6 30A 4 60A 80A 2 IC=10A 0 -50 0 50 100 150 4 8 Case Temperature, TC [] 12 16 Fig 3. Saturation Voltage vs. Case Temperature at Varient Current Level Fig 4. Saturation Voltage vs. VGE 10 10 Common Emitter o TC = 125 C Collector-Emitter Voltage, VCE [V] Common Emitter o TC = 25 C Collector-Emitter Voltage, VCE [V] 20 Gate-Emitter Voltage, V GE [V] 8 6 30A 60A 4 80A 2 IC = 10A 0 8 30A 6 60A 80A 4 2 IC = 10A 0 4 8 12 16 20 4 Gate-Emitter Voltage, VGE [V] Fig 5. Saturation Voltage vs. VGE 8 12 16 20 Gate-Emitter Voltage, VGE [V] Fig 6. Saturation Voltage vs. VGE FGL60N100BNTD Rev.A2 www.fairchildsemi.com http://store.iiic.cc/ FGL60N100BNTD 10000 10000 Cies V CC =600V, IC =60A o T C =25 C 1000 Coes 100 Cres Common Emitter VGE = 0V, f = 1MHz Switching Time [ns] Capacitance [pF] V GE=15V Tdoff 1000 Tr Tdon Tf 100 o TC = 25 C 0 5 10 15 20 25 10 30 0 50 Collector-Emitter Voltage, VCE [V] 100 150 200 Gate Resistance, R G [?] Fig 7. Capacitance Characteristics Fig 8. Switching Characteristics vs. Gate Resistance 20 Common Emitter VCC=600V, RL=10 1000 V CC= 6 0 0 V , R g = 5 1 o T C=25 C o Gate-Emitter Voltage,VGE [V] Switching Time [ns] V GE= 1 5 V , T C = 2 5 C T d o ff Tf Tr 100 T don 15 10 5 0 10 20 30 40 50 0 60 50 100 Fig 9. Switching Characteristics vs. Collector Current o Thermal Response, ZJC [ C/W] Collector Current , I C [A] 50us 100us 10 1ms DC Operation Single Nonrepetitive Pulse o TC = 25 C Curve must be darated linearly with increase in temperature 300 1 0.5 0.2 0.1 10 100 0.02 0.01 0.01 single pulse -4 1000 10 Collector-Emitter Voltage, VCE [V] Fig 11. SOA Characteristics 0.1 0.05 1E-3 0.1 1 250 10 IC MAX. (Continuous) 1 200 Fig 10. Gate Charge Characteristics IC MAX. (Pulsed) 100 150 Gate Charge, Qg [nC] C o lle cto r C urre nt, IC [A ] -3 10 -2 10 -1 10 0 10 1 10 Rectangular Pulse Duration [sec] Fig 12. Transient Thermal Impedance of IGBT FGL60N100BNTD Rev.A2 www.fairchildsemi.com http://store.iiic.cc/ IF= 60A Reverse Recovery Time, trr [ns] o T C = 100 C 10 o T C = 25 C 1 0.1 0.0 0.5 1.0 1.5 2.0 80 0.8 trr 0.6 60 0.4 40 0.2 0 40 Forward Voltage, VFM [V] 160 200 0 240 1.0 10 trr 8 Irr 0.6 6 0.4 1000 100 Reverse Current, IR [A] 12 Reverse Recovery Current Irr [A] Reverse Recovery Time, trr [ns] 120 Fig 14. Reverse Recovery Characteristics vs. di/dt di/dt=-20A/s o TC=25 C 0.8 80 di/dt [A/s] Fig 13. Forward Characteristics 1.2 20 Irr 0.0 2.5 100 Reverse Recovery Current Irr [A] Forward Current, IF[A] o TC= 25 C 1.0 o T C = 150 C 10 1 0.1 o T C= 25 C 0.01 4 1E-3 10 20 30 40 50 60 0 Forward Current, IF [A] 300 600 900 Reverse Voltage, V R [V] Fig 15. Reverse Recovery Characteristics vs. Forward Current Fig 16. Reverse Current vs. Reverse Voltage 250 o TC = 25 C Capacitance, Cj [pF] 200 150 100 50 0 0.1 1 10 100 Reverse Voltage, VR [V] Fig 17. Junction capacitance FGL60N100BNTD Rev.A2 www.fairchildsemi.com http://store.iiic.cc/ FGL60N100BNTD 120 1.2 100 (8.30) (1.00) (2.00) (7.00) 20.00 0.20 2.50 0.10 4.90 0.20 (1.50) (1.50) 2.50 0.20 3.00 0.20 (1.50) 20.00 0.50 (7.00) (2.00) (11.00) 1.50 0.20 ) .20 .00 0 0 ) .00 2 (R (R1 (0.50) o3.3 (9.00) (9.00) (8.30) (4.00) 20.00 0.20 6.00 0.20 TO-264 +0.25 1.00 -0.10 +0.25 0.60 -0.10 2.80 0.30 (2.80) 5.45TYP [5.45 0.30] (0.15) (1.50) 3.50 0.20 5.00 0.20 5.45TYP [5.45 0.30] Dimensions in Millimeters FGL60N100BNTD Rev.A2 www.fairchildsemi.com http://store.iiic.cc/ FGL60N100BNTD Package Dimension tm TRADEMARKS The following are registered and unregistered trademarks and service marks Fairchild Semiconductor and is not intended to be an exhaustive list of all such trademarks. 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A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only. Rev. I29 www.fairchildsemi.com FGL60N100BNTD Rev.A2 http://store.iiic.cc/