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IGBT

FGL60N100BNTD

NPT-Trench IGBT

General Description

Trench insulated gate bipolar transistors (IGBTs) with NPT

technology show outstanding performance in conduction

and switching characteristics as well as enhanced

avalanche ruggedness. These devices are well suited for

Induction Heating ( I-H ) applications

Features

• High Speed Switching

• Low Saturation Voltage : VCE(sat) = 2.5 V @ IC = 60A

• High Input Impedance

• Built-in Fast Recovery Diode

Absolute Maximum Ratings TC = 25°C unless otherwise noted

Notes :

(1) Repetitive rating : Pulse width limited by max. junction temper ature

Thermal Characteristics

Symbol Description FGL60N100BNTD Units

VCES Collector-Emitter Voltage 1000 V

VGES Gate-Emitter Voltage ± 25 V

ICCollector Current @ TC = 25°C60 A

Collector Current @ TC = 100°C42 A

ICM (1) Pulsed Collector Current 200 A

IFDiode Continuous Forward Current @ TC = 100°C15 A

IFM Diode Maximum Forward Current 200 A

PDM a x i m u m P o w e r Di ssipation @ TC = 25°C 180 W

Maximum Power Dissipation @ TC = 100°C72 W

TJ Operating Junction Temperature -55 to +150 °C

Tstg Storage Temperature Range -55 to +150 °C

TLMaximum Lead Temp. for soldering

Purposes, 1/8” from case for 5 seconds 300 °C

Symbol Parameter Typ. Max. Units

RθJC(IGBT) Thermal Resistance, Junction-to-Case -- 0.69 °C/W

RθJC(DIODE) Thermal Resistance, Junction-to-Case -- 2.08 °C/W

RθJA Thermal Resistance, Junction-to-Ambient -- 25 °C/W

Application

Micro- Wave Oven, I-H Cooker, I-H Jar, Induction Heater, Home Appliance

GCETO-264

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FGL60N100BNTD

FGL60N100BNTD Rev.A2

Electrical Characteristics of IGBT TC = 25°C unless otherwise noted

Electrical Characteristics of DIODE TC = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min. Typ. Max. Units

Off Characterist ic s

BVCES Collector Emitter Breakdown Voltage VGE = 0V, IC = 1mA 1000 -- -- V

ICES Collector Cut-Off Current VCE = 1000V, VGE = 0V -- -- 1.0 mA

IGES G-E Leakage Current VGE = ± 25, VCE = 0V -- -- ± 500 nA

On Characteristics

VGE(th) G-E Threshold Voltage IC = 60mA, VCE = VGE 4.0 5.0 7.0 V

VCE(sat) Collector to Emitter

Saturation Voltage IC = 10A, VGE = 15V -- 1.5 1.8 V

IC = 60A, VGE = 15V -- 2.5 2.9 V

Dynamic Characteristics

Cies Input Capacitance VCE=10V, VGE = 0V,

f = 1MHz

-- 6000 -- pF

Coes Output Capacitance -- 260 -- pF

Cres Reverse Transfer Capacitance -- 200 -- pF

Switching Characteristics

td(on) Turn-On Delay Time VCC = 600 V, IC = 60A,

RG = 51Ω, VGE=15V,

Resistive Load, TC = 25°C

-- 140 -- ns

trRise Time -- 320 -- ns

td(off) Turn-Off Delay Time -- 630 -- ns

tfFall Time -- 130 250 ns

QgTotal Gate Charge VCE = 600 V, IC = 60A,

VGE = 15V , TC = 25°C

-- 275 350 nC

Qge Gate-Emitter Charge -- 45 -- nC

Qgc Gate-Collector Charge -- 95 -- nC

Symbol Parameter Test Conditions Min. Typ. Max. Units

VFM Diode Forward Voltage IF = 15A -- 1.2 1.7 V

IF = 60A -- 1.8 2.1 V

trr Diode Reverse Recovery Time IF = 60A di/dt = 20 A/us -- 1.2 1.5 µs

IRInstantaneous Reverse Current VRRM = 1000V -- 0.05 2 µA

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FGL60N100BNTD

FGL60N100BNTD Rev.A2

01234

100

150

200 20V

15V 10V

VGE = 6V

Common Emit ter

TC = 25oC

Collector Current, I C [A]

Collector-Emitter Voltage, VCE [V] 01234

TC = 125oC

TC = 2 5 oC

Common Emit t er

VGE = 15V

TC = 25oC

TC = 125oC ------

Collector Current, I C [A]

Collector-Emitter Voltage, VCE [V]

-50 0 50 100 150

IC=10A

30A

60A

80A

Common Emitter

VGE=15V

Collector-Emitter Voltage, VCE [V]

Case Temperature, TC []℃

4 8 12 16 20

10 Common Emitter

TC= - 40 OC

IC=10A

80A

60A

30A

Collector-Emitter Voltage, VCE[V]

Gate-Emitter Voltage, VGE [V]

4 8 12 16 20

10 Common Emitt er

TC = 25oC

80A

60A

30A

IC = 10A

Collector-Emitter Voltage, VCE [V]

Gate-Emitter Voltage, VGE [V]

4 8 12 16 20

10 Common Emitter

TC = 125oC

80A

60A

30A

IC = 10A

Collector-Emitter Voltage, VCE [V]

Gate-Em itter Voltag e, VGE [V]

Fig 1. Typical Output Characteristics Fig 2. Typical Saturation Voltage Characteris tics

Fig 4. Saturation Voltage vs. VGE Fig 3. Saturation Voltage vs. Case

Temperature at Varient Current Level

Fig 5. Saturation Voltage vs. VGE Fig 6. Saturation Voltage vs. VGE

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FGL60N100BNTD

FGL60N100BNTD Rev.A2

0 5 10 15 20 25 30

100

1000

10000

Common Emitter

VGE = 0V, f = 1MHz

TC = 25oC

Cres

Coes

Cies

Capacitance [pF ]

Collector-Emitter Volt age, VCE [V] 0 50 100 150 200

100

1000

10000

VCC=600V, IC=60A

VGE=15V

TC=25oCTdoff

Tdon

Switching Time [ns]

Gate Resistance, RG [?]

10 20 30 40 50 60

100

1000 V CC=600V, Rg=51Ω

V GE=15V, T C=25oC

Tdon

Tdoff

Switching Time [ns]

Colle c to r Curren t, IC [A]

0 50 100 150 200 250 300

20 Common Emitter

VCC=600V, RL=10Ω

TC=25 oC

Gate-Emitter Voltage,VGE [V]

Gate Charge, Qg [nC]

1 10 100 1000

0.1

100

Single Nonrepetitive Pul se

TC = 25oC

Curve must be darated

linearly with incr ease

in temperature

50us

100us

1ms

DC Operation

IC MAX. (Pulse d)

IC MAX. (Continuous)

Collector Current , I C [A]

Collector-Emitter Voltage, VCE [V] 10-4 10-3 10-2 10-1 100101

1E-3

0.01

0.1

0.5

0.2

0.05

0.02

0.01

single pulse

Thermal Response, ZθJC [oC/W]

Rectang u lar Pulse Duration [sec]

Fig 7. Capacitance Characteristics Fig 8. Switching Characteristics vs.

Gate Resistance

Fig 9. Switchin g Ch aracteristics vs.

Collector Current Fig 10. Gate Charge Characteristics

Fig 11. SOA Characteristics Fig 12. Transient Thermal Impedance of IGBT

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FGL60N100BNTD

FGL60N100BNTD Rev.A2

Fig 17. Junction capacitance

0.1

100

0.0 0.5 1.0 1.5 2.0 2.5

TC = 25 oC

TC = 100 oC

Forward Voltage, VFM [V]

Forward Current, IF[A]

0 40 80 120 160 200 240

0.0

0.2

0.4

0.6

0.8

1.0

1.2

Irr

trr

IF= 60A

TC= 25oC

di/dt [A/µs]

Reverse Recovery Time, trr [ns]

100

120

Reverse Recovery Current Irr [A]

10 20 30 40 50 60

0.4

0.6

0.8

1.0

1.2

Irr

trr

Forward Current, IF [A]

Reverse Recovery Time, trr [ns]

di/dt=-20A/µs

TC=25oC

Reverse Recovery Current Irr [A]

0 300 600 900

1E-3

0.01

0.1

100

1000

TC = 150oC

TC= 25oC

Reverse Current, IR [µA]

Reverse Voltage, VR [V]

0.1 1 10 100

100

150

200

250 TC = 25 oC

Capacitance, Cj [pF]

Reverse Voltage, VR [V]

Fig 14. Reverse Recovery Characteristics

vs. di/dt

Fig 13. Forward Characteristics

Fig 15. Reverse Recovery Characte ristics vs.

Forward Current Fig 16. Reverse Current vs. Reverse Volt age

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FGL60N100BNTD

Package Dimension

5.45TYP

[5.45

±0.30

]5.45TYP

[5.45

±0.30

]

4.90

±0.20

20.00

±0.20

(8.30) (8.30) (1.00)

(0.50)

(2.00)

(7.00)

(R1.00)

(R2.00)

ø3.30 ±0.20

(7.00)

(1.50)

(1.50) (1.50)

2.50

±0.20

3.00

±0.20

2.80

±0.30

1.00

+0.25

–0.10

0.60

+0.25

–0.10

1.50

±0.20

6.00

±0.20

20.00

±0.20

20.00

±0.50

5.00

±0.20

3.50

±0.20

2.50

±0.10

(9.00)

(2.00)

(1.50)

(0.15)

(2.80) (4.00)

(11.00)

TO-264

Dimensions in Millimeters

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FGL60N100BNTD Rev.A2

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SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS.

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used in accordance with instructions for use provided in the

labeling, can be reasonably expected to result in a significant

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2. A critical component in any component of a life support,

device, or system whose failure to perform can be reasonably

expected to cause the failure of the life support device or system,

or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

ACEx®

Build it Now™

CorePLUS™

CROSSVOLT™

CTL™

Current Transfer Logic™

EcoSPARK®

FACT Quiet Series™

FACT®

FAST®

FastvCore™

FPS™

FRFET®

Global Power ResourceSM

Green FPS™

Green FPS™ e-Series™

GOT™

i-Lo™

IntelliMAX™

ISOPLANAR™

MegaBuck™

MICROCOUPLER™

MicroFET™

MicroPak™

Motion-SPM™

OPTOLOGIC®

OPTOPLANAR®

PDP-SPM™

Power220®

Power247®

POWEREDGE®

Power-SPM™

PowerTrench®

Programmable Active Droop™

QFET®

QS™

QT Optoelectronics™

Quiet Series™

RapidConfigure™

SMART START™

SPM®

STEALTH™

SuperFET™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

The Power Franchise®

™

TinyBoost™

TinyBuck™

TinyLogic®

TINYOPTO™

TinyPower™

TinyPWM™

TinyWire™

µSerDes™

UHC®

UniFET™

VCX™

Datasheet Identification Product Status Definition

Advance Information Formative or In Design This datasheet contains the design specifications for product

development. Specifications may change in any manner without notice.

Preliminary First Production This datasheet contains preliminary data; supplementary data will be

published at a later date. Fairchild Semiconductor reserves the right to

make changes at any time without notice to improve design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor

reserves the right to make changes at any time without notice to

improve design.

Obsolete Not In Production This datasheet contains specifications on a product that has been dis-

continued by Fairchild Semiconductor.The datasheet is printed for refer-

ence information only.

Rev. I29

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