TISP4145M3LMFR-S - Bourns, Inc.

TISP4070M3LM THRU TISP4115M3LM,

TISP4125M3LM THRU TISP4220M3LM,

TISP4240M3LM THRU TISP4400M3LM

BIDIRECTIONAL THYRISTOR OVERVOLTAGE PROTECTORS

TISP4xxxM3LM Overvoltage Protector Series

NOVEMBER 1997 - REVISED JANUARY 2010

*RoHS Directive 2002/95/EC Jan 27 2003 including Annex.

Speciﬁ cations are subject to change without notice.

Customers should verify actual device performance in their speciﬁ c applications.

TISP4xxxM3LM Overview

*RoHS COMPLIANT

This TISP® device series protects central ofﬁ ce, access and customer premise equipment against overvoltages on the telecom line. The

TISP4xxxM3LM is available in a wide range of voltages and has a medium current capability. These protectors have been speciﬁ ed mindful

of the following standards and recommendations: GR-1089-CORE, FCC Part 68, UL1950, EN 60950, IEC 60950, ITU-T K.20, K.21 and K.45.

The TISP4350M3LM meets the FCC Part 68 “B” ringer voltage requirement and survives the Type B impulse tests. These devices are housed

in a through-hole DO-92 package (TO-92 package with cropped center leg).

Summary Current Ratings

The TISP4xxxxM3LM Series is currently

available, although not recommended

for new designs.

Summary Electrical Characteristics

Parameter ITSP

ITSM

di/dt

A/μs

Waveshape 2/10 1.2/50, 8/20 10/160 5/320 10/560 10/1000 1 cycle 60 Hz 2/10 Wavefront

Value 300 220 120 100 75 50 32 300

Part # VDRM

V(BO)

VT @ IT

IDRM

μA

I(BO)

Co @ -2 V

Functionally

Replaces

TISP4070M3 58 70 3 5 600 5 150 120 P0640EA

TISP4080M3 65 80 3 5 600 5 150 120 P0720EA

TISP4095M3 75 95 3 5 600 5 150 120 P0900EA

TISP4115M3 90 115 3 5 600 5 150 120 P1100EA

TISP4125M3 100 125 3 5 600 5 150 65

TISP4145M3 120 145 3 5 600 5 150 65 P1300EA

TISP4165M3 135 165 3 5 600 5 150 65

TISP4180M3 145 180 3 5 600 5 150 65 P1500EA

TISP4220M3 160 220 3 5 600 5 150 65 P1800EA

TISP4240M3 180 240 3 5 600 5 150 55

TISP4250M3 190 250 3 5 600 5 150 55 P2300EA

TISP4260M3 200 260 3 5 600 5 150 55

TISP4290M3 220 290 3 5 600 5 150 55 P2600EA

TISP4300M3 230 300 3 5 600 5 150 55

TISP4350M3 275 350 3 5 600 5 150 55 P3100EA

TISP4395M3 320 395 3 5 600 5 150 55 P3500EA

TISP4400M3 300 400 3 5 600 5 150 55

ourns' part has an improved protection voltage

Device VDRM

V(BO)

‘4070 58 70

‘4080 65 80

‘4095 75 95

‘4115 90 115

‘4125 100 125

‘4145 120 145

‘4165 135 165

‘4180 145 180

‘4220 160 220

‘4240 180 240

‘4250 190 250

‘4260 200 260

‘4290 220 290

‘4300 230 300

‘4350 275 350

‘4395 320 395

‘4400 300 400

NOVEMBER 1997 - REVISED JANUARY 2010

Speciﬁ cations are subject to change without notice.

Customers should verify actual device performance in their speciﬁ c applications.

TISP4xxxM3LM Overvoltage Protector Series

ITU-T K.20/21 Rating ............................ 4 kV 10/700, 100 A 5/310

Ion-Implanted Breakdown Region

Precise and Stable Voltage

Low Voltage Overshoot under Surge

Waveshape Standard ITSP

2/10 µs GR-1089-CORE 300

8/20 µs IEC 61000-4-5 220

10/160 µs FCC Part 68 120

10/700 µsITU-T K.20/21

FCC Part 68 100

10/560 µs FCC Part 68 75

10/1000 µs GR-1089-CORE 50

Rated for International Surge Wave Shapes

Device Symbol

LM Package (Top View)

How to Order

LMF Package (LM Package with Formed Leads) (Top View)

NC - No internal connection on pin 2

T(A)

R(B)

MD4XAT

NC - No internal connection on pin 2

T(A)

R(B)

MD4XAKB

RSD4XAA

Terminals T and R correspond to the

alternative line designators of A and B

Low Differential Capacitance ...................................... 43 pF max.

................................................UL Recognized Component

Description

These devices are designed to limit overvoltages on the telephone line. Overvoltages are normally caused by a.c. power system or lightning

ﬂ ash disturbances which are induced or conducted on to the telephone line. A single device provides 2-point protection and is typically used

for the protection of 2-wire telecommunication equipment (e.g. between the Ring and Tip wires for telephones and modems). Combinations

of devices can be used for multi-point protection (e.g. 3-point protection between Ring, Tip and Ground).

Device Package Carrier

TISP4xxxM3LM Straight Lead DO-92 (LM) Bulk Pack

Tape and Reeled

Formed Lead DO-92 (LMF) Tape and Reeled

TISP4xxxM3LM-S

TISP4xxxM3LMR-S

TISP4xxxM3LMFR-S

Insert xxx value corresponding to protection voltages of 070, 080, 095, 115 etc.

Order As

NOVEMBER 1997 - REVISED JANUARY 2010

Speciﬁ cations are subject to change without notice.

Customers should verify actual device performance in their speciﬁ c applications.

TISP4xxxM3LM Overvoltage Protector Series

Description

The protector consists of a symmetrical voltage-triggered bidirectional thyristor. Overvoltages are initially clipped by breakdown clamping

until the voltage rises to the breakover level, which causes the device to crowbar into a low-voltage on state. This low-voltage on state

causes the current resulting from the overvoltage to be safely diverted through the device. The high crowbar holding current prevents d.c.

latchup as the diverted current subsides.

This TISP4xxxM3LM range consists of seventeen voltage variants to meet various maximum system voltage levels (58 V to 320 V). They are

guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. These protection devices are supplied

in a DO-92 (LM) cylindrical plastic package. The TISP4xxxM3LM is a straight lead DO-92 supplied in bulk pack and on tape and reel. The

TISP4xxxM3LMF is a formed lead DO-92 supplied only on tape and reel. For higher rated impulse currents in the DO-92 package, the 100 A

10/1000 TISP4xxxH3LM series is available.

Absolute Maximum Ratings, TA = 25 °C (Unless Otherwise Noted)

Rating Symbol Value Unit

Repetitive peak off-state voltage, (see Note 1)

‘4070

‘4080

‘4095

‘4115

‘4125

‘4145

‘4165

‘4180

‘4220

‘4240

‘4250

‘4260

‘4290

‘4300

‘4350

‘4395

‘4400

VDRM

± 58

± 65

± 75

± 90

±100

±120

±135

±145

±160

±180

±190

±200

±220

±230

±275

±320

±300

Non-repetitive peak on-state pulse current (see Notes 2, 3 and 4)

ITSP A

2/10 µs (GR-1089-CORE, 2/10 µs voltage wave shape) 300

8/20 µs (IEC 61000-4-5, combination wave generator, 1.2/50 voltage, 8/20 current) 220

10/160 µs (FCC Part 68, 10/160 µs voltage wave shape) 120

5/200 µs (VDE 0433, 10/700 µs voltage wave shape) 110

0.2/310 µs (I 31-24, 0.5/700 µs voltage wave shape) 100

5/310 µs (ITU-T K.20/21, 10/700 µs voltage wave shape) 100

5/310 µs (FTZ R12, 10/700 µs voltage wave shape) 100

5/320 µs (FCC Part 68, 9/720 µs voltage wave shape) 100

10/560 µs (FCC Part 68, 10/560 µs voltage wave shape) 75

10/1000 µs (GR-1089-CORE, 10/1000 µs voltage wave shape) 50

Non-repetitive peak on-state current (see Notes 2, 3 and 5)

ITSM

2.1

20 ms (50 Hz) full sine wave

16.7 ms (60 Hz) full sine wave

1000 s 50 Hz/60 Hz a.c.

Initial rate of rise of on-state current, Exponential current ramp, Maximum ramp value < 100 A diT/dt 300 A/µs

Junction temperature TJ-40 to +150 °C

Storage temperature range Tstg -65 to +150 °C

NOTES: 1. See Applications Information and Figure 10 for voltage values at lower temperatures.

2. Initially the TISP4xxxM3LM must be in thermal equilibrium with TJ=25°C.

3. The surge may be repeated after the TISP4xxxM3LM returns to its initial conditions.

4. See Applications Information and Figure 11 for current ratings at other temperatures.

5. EIA/JESD51-2 environment and EIA/JESD51-3 PCB with standard footprint dimensions connected with 5 A rated printed wiring

track widths. See Figure 8 for the current ratings at other durations. Derate current values at -0.61 %/°C for ambient

temperatures above 25 °C

NOVEMBER 1997 - REVISED JANUARY 2010

Speciﬁ cations are subject to change without notice.

Customers should verify actual device performance in their speciﬁ c applications.

TISP4xxxF3LM Overvoltage Protector SeriesTISP4xxxM3LM Overvoltage Protector Series

Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted)

Parameter Test Conditions Min Typ Max Unit

IDRM

Repetitive peak off-

state current VD = ±VDRM

TA = 25 °C

TA = 85 °C

±5

±10

V(BO) Breakover voltage dv/dt = ±750 V/ms, RSOURCE =

‘4070

‘4080

‘4095

‘4115

‘4125

‘4145

‘4165

‘4180

‘4220

‘4240

‘4250

‘4260

‘4290

‘4300

‘4350

‘4395

‘4400

±70

±80

±95

±115

±125

±145

±165

±180

±220

±240

±250

±260

±290

±300

±350

±395

±400

V(BO)

Impulse breakover

voltage

dv/dt ≤ ±1000 Linear voltage ramp,

Maximum ramp value = ±500 V

di/dt = ±20 A Linear current ramp,

Maximum ramp value = ±10 A

‘4070

‘4080

‘4095

‘4115

‘4125

‘4145

‘4165

‘4180

‘4220

‘4240

‘4250

‘4260

‘4290

‘4300

‘4350

‘4395

‘4400

±78

±88

±102

±122

±132

±151

±171

±186

±227

±247

±257

±267

±298

±308

±359

±405

±410

I(BO) Breakover current dv/dt = ±750 V/ms, RSOURCE =±0.15 ±0.6 A

VTOn-state voltage IT=±5A, tW= 100 ±3V

IHHolding current IT=±5A, di/dt=-/+3 0mA/ms ±0.15 ±0.6 A

dv/dt Critical rate of rise of

off-state voltage Linear voltage ramp, Maximum ramp value < 0.85VDRM ±5kV

IDOff-state current VD=±50 V TA = 85 °C±10 μA

TISP4xxxF3LM Overvoltage Protector Series

Electrical Characteristics, TA = 25 °C (Unless Otherwise Noted) (Continued)

NOVEMBER 1997 - REVISED JANUARY 2010

Speciﬁ cations are subject to change without notice.

Customers should verify actual device performance in their speciﬁ c applications.

TISP4xxxM3LM Overvoltage Protector Series

Coff Off-state capacitance

f = 100 kHz, Vd=1V rms, V

D=0,

f = 100 kHz, Vd=1V rms, V

D=-1V

f = 100 kHz, Vd=1V rms, V

D=-2V

f = 100 kHz, Vd=1V rms, V

D=-50V

f = 100 kHz, Vd=1V rms, V

D= -100 V

(see Note 6)

4070 thru ‘4115

‘4125 thru ‘4220

‘4240 thru ‘4400

‘4070 thru ‘4115

‘4125 thru ‘4220

‘4240 thru ‘4400

‘4070 thru ‘4115

‘4125 thru ‘4220

‘4240 thru ‘4400

‘4070 thru ‘4115

‘4125 thru ‘4220

‘4240 thru ‘4400

‘4125 thru ‘4220

‘4240 thru ‘4400

110

NOTE 6: To avoid possible voltage clipping, the ‘4125 is tested with VD=-98V.

Parameter Test Conditions Min Typ Max Unit

Thermal Characteristics

Parameter Test Conditions Min Typ Max Unit

RJA Junction to free air thermal resistance

EIA/JESD51-3 PCB, IT = ITSM(1000),

TA = 25 °C, (see Note 7) 120

C/W

265 mm x 210 mm populated line card,

4-layer PCB, IT = ITSM(1000), TA = 25 °

C57

NOTE 7: EIA/JESD51-2 environment and PCB has standard footprint dimensions connected with 5 A rated printed wiring track widths.

TISP4xxxM3LM Overvoltage Protector Series

Parameter Measurement Information

NOVEMBER 1997 - REVISED JANUARY 2010

Speciﬁ cations are subject to change without notice.

Customers should verify actual device performance in their speciﬁ c applications.

Figure 1. Voltage-current Characteristic for T and R Terminals

All Measurements are Referenced to the R Terminal

-v

VDRM

IDRM

ITSM

ITSP

V(BO)

I(BO)

Quadrant I

Switching

Characteristic

V(BO)

I(BO)

ITSM

ITSP

-i

Quadrant III

Switching

Characteristic PMXXAAB

VDRM

IDRM

Figure 2. Figure 3.

Figure 4. Figure 5.

TJ - Junction Temperature - °C

-25 0 25 50 75 100 125 150

|ID| - Off-State Current - µA

0·001

0·01

0·1

100 TCMAG

VD = ±50 V

TJ - Junction Temperature - °C

-25 0 25 50 75 100 125 150

Normalized Breakover Voltage

0.95

1.00

1.05

1.10 TC4MAF

VT - On-State Voltage - V

0.7 1.5 2 3 4 5 7110

IT - On-State Current - A

1.5

100

TA = 25 °C

tW = 100 µs

TC4MAJA

'4240

THRU

'4400

'4125

THRU

'4220

'4070

THRU

'4115

TJ - Junction Temperature - °C

-25 0 25 50 75 100 125 150

Normalized Holding Current

0.4

0.5

0.6

0.7

0.8

0.9

1.5

2.0

1.0

TC4MAD

OFF-STATE CURRENT

JUNCTION TEMPERATURE

NORMALIZED BREAKOVER VOLTAGE

JUNCTION TEMPERATURE

ON-STATE CURRENT

ON-STATE VOLTAGE

NORMALIZED HOLDING CURRENT

JUNCTION TEMPERATURE

NOVEMBER 1997 - REVISED JANUARY 2010

Speciﬁ cations are subject to change without notice.

Customers should verify actual device performance in their speciﬁ c applications.

TISP4xxxM3LM Overvoltage Protector Series

Typical Characteristics

TISP4xxxM3LM Overvoltage Protector Series

Typical Characteristics

Figure 6. Figure 7.

VD - Off-state Voltage - V

0.5 1 2 3 5 10 20 30 50 100150

Capacitance Normalized to VD = 0

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

TJ = 25 °C

Vd = 1 Vrms

TC4MAKA

'4240 THRU '4400

'4125 THRU '4220

'4070 THRU '4115

VDRM - Repetitive Peak Off-State Voltage - V

50 60 70 80 90 150 200 250 300100

C - Differential Off-State Capacitance - pF

C = Coff(-2 V) - Coff(-50 V)

TC4MALB

'4070

'4080

'4095

'4125

'4145

'4165

'4180

'4260

'4300

'4350

'4400

'4240

'4115

'4220

'4250

'4290

'4395

NORMALIZED CAPACITANCE

OFF-STATE VOLTAGE

DIFFERENTIAL OFF-STATE CAPACITANCE

RATED REPETITIVE PEAK OFF-STATE VOLTAGE

NOVEMBER 1997 - REVISED JANUARY 2010

Speciﬁ cations are subject to change without notice.

Customers should verify actual device performance in their speciﬁ c applications.

Figure 8. Figure 9.

Figure 10. Figure 11.

t - Current Duration - s

0·1 1 10 100 1000

ITSM(t) - Non-Repetitive Peak On-State Current - A

1.5

VGEN = 600 Vrms, 50/60 Hz

RGEN = 1.4*VGEN/ITSM(t)

EIA/JESD51-2 ENVIRONMENT

EIA/JESD51-3 PCB

TA = 25 °C

t - Power Duration - s

0·1 1 10 100 1000

ZθJA(t) - Transient Thermal Impedance - °C/W

150

100

TI4MAG

ITSM(t) APPLIED FOR TIME t

EIA/JESD51-2 ENVIRONMENT

EIA/JESD51-3 PCB

TA = 25 °C

TAMIN - Minimum Ambient Temperature - °C

-35 -25 -15 -5 5 15 25-40 -30 -20 -10 0 10 20

Derating Factor

0.93

0.94

0.95

0.96

0.97

0.98

0.99

1.00 TI4MAHA

'4125 THRU '4220

'4240 THRU '4400

'4070 THRU '4115

TA - Ambient Temperature - °C

-40-30-20-100 1020304050607080

Impulse Current - A

100

120

150

200

250

300

400

IEC 1.2/50, 8/20

ITU-T 10/700

FCC 10/560

BELLCORE 2/10

BELLCORE 10/1000

FCC 10/160

TC4MAA

NON-REPETITIVE PEAK ON-STATE CURRENT

CURRENT DURATION

THERMAL IMPEDANCE

POWER DURATION

VDRM DERATING FACTOR

MINIMUM AMBIENT TEMPERATURE

IMPULSE RATING

AMBIENT TEMPERATURE

TISP4xxxM3LM Overvoltage Protector Series

Rating and Thermal Information

NOVEMBER 1997 - REVISED JANUARY 2010

Speciﬁ cations are subject to change without notice.

Customers should verify actual device performance in their speciﬁ c applications.

TISP4xxxM3LM Overvoltage Protector Series

Deployment

NOVEMBER 1997 - REVISED JANUARY 2010

Speciﬁ cations are subject to change without notice.

Customers should verify actual device performance in their speciﬁ c applications.

APPLICATIONS INFORMATION

These devices are two terminal overvoltage protectors. They may be used either singly to limit the voltage between two conductors

(Figure 12) or in multiples to limit the voltage at several points in a circuit (Figure 13).

Figure 12. Two Point Protection Figure 13. Multi-point Protection

Th1

Th3

Th2

Th1

In Figure 12, protector Th1 limits the maximum voltage between the two conductors to ±V(BO). This conﬁ guration is normally used to

protect circuits without a ground reference, such as modems. In Figure 13, protectors Th2 and Th3 limit the maximum voltage between each

conductor and ground to the ±V(BO) of the individual protector. Protector Th1 limits the maximum voltage between the two conductors to its

±V(BO) value. If the equipment being protected has all its vulnerable components connected between the conductors and ground, then

protector Th1 is not required.

Impulse Testing

To verify the withstand capability and safety of the equipment, standards require that the equipment is tested with various impulse wave

forms. The table below shows some common values.

If the impulse generator current exceeds the protector’s current rating, then a series resistance can be used to reduce the current to the

protector’s rated value to prevent possible failure. The required value of series resistance for a given waveform is given by the following

calculations. First, the minimum total circuit impedance is found by dividing the impulse generator’s peak voltage by the protector’s rated

current. The impulse generator’s ﬁ ctive impedance (generator’s peak voltage divided by peak short circuit current) is then subtracted from the

minimum total circuit impedance to give the required value of series resistance.

For the FCC Part 68 10/560 waveform the following values result. The minimum total circuit impedance is 800/75 = 10.7 Ω and the gener-

ator’s ﬁ ctive impedance is 800/100 = 8 Ω. This gives a minimum series resistance value of 10.7 - 8 = 2.7 Ω. After allowing for tolerance, a 3

Ω ±10% resistor would be suitable. The 10/160 waveform needs a standard resistor value of 5.6 Ω per conductor. These would be R1a and

R1b in Figure 15 and Figure 16. FCC Part 68 allows the equipment to be non-operational after the 10/160 (conductor to ground) and 10/560

(inter-conductor) impulses. The series resistor value may be reduced to zero to pass FCC Part 68 in a non-operational mode, e.g. Figure 14.

For this type of design, the series fuse must open before the TISP4xxxM3 fails. For Figure 14, the maximum fuse i2t is 2.3 A2s. In some cases,

the equipment will require veriﬁ cation over a temperature range. By using the rated waveform values from Figure 11, the appropriate series

resistor value can be calculated for ambient temperatures in the range of -40 °C to 85 °C.

Standard

Peak Voltage

Setting

Voltage

Waveform

Peak Current

Va lu e

Current

Waveform

TISP4xxxM3

25 C Rating

Series

Resistance

GR-1089-CORE 2500 2/10 500 2/10 300 11

1000 10/1000 100 10/1000 50

FCC Part 68

(March 1998)

1500 10/160 200 10/160 120 2x5.6

800 10/560 100 10/560 75 3

1500 9/720 37.5 5/320 100 0

1000 9/720 25 5/320 100 0

I3124 1500 0.5/700 37.5 0.2/310 100 0

ITU-T K.20/K.21 1500

4000 10/700 37.5

100 5/310 100 0

FCC Part 68 terminology for the waveforms produced by the ITU-T recommendation K.21 10/700 impulse generator

TISP4xxxM3LM Overvoltage Protector Series

NOVEMBER 1997 - REVISED JANUARY 2010

Speciﬁ cations are subject to change without notice.

Customers should verify actual device performance in their speciﬁ c applications.

AC Power Testing

APPLICATIONS INFORMATION

The protector can withstand currents applied for times not exceeding those shown in Figure 8. Currents that exceed these times must be

terminated or reduced to avoid protector failure. Fuses, PTC (Positive Temperature Coefﬁ cient) resistors and fusible resistors are overcurrent

protection devices which can be used to reduce the current ﬂ ow. Protective fuses may range from a few hundred milliamperes to one a

mpere. In some cases, it may be necessary to add some extra series resistance to prevent the fuse from opening during impulse testing. The

current versus time characteristic of the overcurrent protector must be below the line shown in Figure 8. In some cases there may be a further

time limit imposed by the test standard (e.g. UL 1459 wiring simulator failure).

Capacitance

The protector characteristic off-state capacitance values are given for d.c. bias voltage, VD, values of 0, -1 V, -2 V and -50 V. Where possible,

values are also given for -100 V. Values for other voltages may be calculated by multiplying the VD = 0 capacitance value by the factor given

in Figure 6. Up to 10 MHz, the capacitance is essentially independent of frequency. Above 10 MHz, the effective capacitance is strongly

dependent on connection inductance. In many applications, such as Figure 15 and Figure 17, the typical conductor bias voltages will be

about -2 V and -50 V. Figure 7 shows the differential (line unbalance) capacitance caused by biasing one protector at -2 V and the other at

-50 V.

Normal System Voltage Levels

The protector should not clip or limit the voltages that occur in normal system operation. For unusual conditions, such as ringing without the

line connected, some degree of clipping is permissible. Under this condition, about 10 V of clipping is normally possible without activating

the ring trip circuit.

Figure 10 allows the calculation of the protector VDRM value at temperatures below 25 °C. The calculated value should not be less than the

maximum normal system voltages. The TISP4260M3LM, with a VDRM of 200 V, can be used for the protection of ring generators producing

100 V rms of ring on a battery voltage of -58 V (Th2 and Th3 in Figure 17). The peak ring voltage will be 58 + 1.414*100 = 199.4 V. However,

this is the open circuit voltage and the connection of the line and its equipment will reduce the peak voltage. In the extreme case of an

unconnected line, clipping the peak voltage to 190 V should not activate the ring trip. This level of clipping would occur at the temperature

when the VDRM has reduced to 190/200 = 0.95 of its 25 °C value. Figure 10 shows that this condition will occur at an ambient temperature of

-28 °C. In this example, the TISP4260M3LM will allow normal equipment operation provided that the minimum expected ambient tempera-

ture does not fall below -28 °C.

JESD51 Thermal Measurement Method

To standardize thermal measurements, the EIA (Electronic Industries Alliance) has created the JESD51 standard. Part 2 of the standard

(JESD51-2, 1995) describes the test environment. This is a 0.0283 m3 (1 ft3) cube which contains the test PCB (Printed Circuit Board)

horizontally mounted at the center. Part 3 of the standard (JESD51-3, 1996) deﬁ nes two test PCBs for surface mount components; one for

packages smaller than 27 mm (1.06 ’’) on a side and the other for packages up to 48 mm (1.89 ’’). The LM package measurements used the

smaller 76.2 mm x 114.3 mm (3.0 ’’ x 4.5 ’’) PCB. The JESD51-3 PCBs are designed to have low effective thermal conductivity (high thermal

resistance) and represent a worse case condition. The PCBs used in the majority of applications will achieve lower values of thermal resis-

tance and so can dissipate higher power levels than indicated by the JESD51 values.

Figure 14. MODEM Inter-wire Protection Figure 15. Protection Module

Figure 16. ISDN Protection

Figure 17. Line Card Ring/Test Protection

FUSE

TISP4350

TISP4400

AI6XBM

RING DETECTOR

HOOK SWITCH

D.C. SINK

SIGNAL

MODEM

RING

WIRE

TIP

WIRE R1a

R1b

RING

WIRE

TIP

WIRE

Th3

Th2

Th1

PROTECTED

EQUIPMENT

E.G. LINE CARD

AI6XBK

R1a

R1b

Th3

Th2

Th1

AI6XBL

SIGNAL

D.C.

TEST

RELAY

RING

RELAY

SLIC

RELAY

TEST

EQUIP-

MENT RING

GENERATOR

S1a

S1b

R1a

R1b

RING

WIRE

TIP

WIRE

Th3

Th2

Th1

Th4

Th5

SLIC

PROTECTION

RING/TEST

PROTECTION

OVER-

CURRENT

PROTECTION

S2a

S2b

S3a

S3b

VBAT

220 nF

AI6XBJ

TISP6xxxx,

TISPPBLx,

1/2TISP6NTP2

TISP4xxxM3LM Overvoltage Protector Series

Typical Circuits

NOVEMBER 1997 - REVISED JANUARY 2010

Speciﬁ cations are subject to change without notice.

Customers should verify actual device performance in their speciﬁ c applications.

TISP4xxxM3LM Overvoltage Protector Series

Device Symbolization Code

MECHANICAL DATA

Devices will be coded as below.

Device Symbolization

Code

TISP4070M3LM 4070M3

TISP4080M3LM 4080M3

TISP4095M3LM 4095M3

TISP4115M3LM 4115M3

TISP4125M3LM 4125M3

TISP4145M3LM 4145M3

TISP4165M3LM 4165M3

TISP4180M3LM 4180M3

TISP4220M3LM 4220M3

TISP4240M3LM 4240M3

TISP4250M3LM 4250M3

TISP4260M3LM 4260M3

TISP4290M3LM 4290M3

TISP4300M3LM 4300M3

TISP4350M3LM 4350M3

TISP4395M3LM 4395M3

TISP4400M3LM 4400M3

Carrier Information

Devices are shipped in one of the carriers below. A reel contains 2000 devices.

Package Type Carrier

Straight Lead DO-92 Bulk Pack

Straight Lead DO-92 Tape and Reeled

Formed Lead DO-92 Tape and Reeled

TISP4xxxM3LM-S

TISP4xxxM3LMR-S

TISP4xxxM3LMFR-S

Order As

“TISP” is a trademark of Bourns, Ltd., a Bourns Company, and is Registered in U.S. Patent and Trademark Ofﬁ ce.

“Bourns” is a registered trademark of Bourns, Inc. in the U.S. and other countries.

NOVEMBER 1997 - REVISED JANUARY 2010

Speciﬁ cations are subject to change without notice.

Customers should verify actual device performance in their speciﬁ c applications.