
Monolithic InGaP HBT MMIC Amplier
ISO 9001 ISO 14001 AS 9100 CERTIFIED
Mini-Circuits®
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Notes: 1. Performance and quality attributes and conditions not expressly stated in this specification sheet are intended to be excluded and do not form a part of this specification sheet. 2. Electrical specifications
and performance data contained herein are based on Mini-Circuit’s applicable established test performance criteria and measurement instructions. 3. The parts covered by this specification sheet are subject to
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IF/RF MICROWAVE COMPONENTS
Page 2 of 4
Electrical Specications at 25°C and 60mA, unless noted
ERA-50SM+
Absolute Maximum Ratings
Parameter Ratings
Operating Temperature* -45°C to 85°C
Storage Temperature -65°C to 150°C
Operating Current 85mA
Power Dissipation 451mW
Input Power 13dBm
Note: Permanent damage may occur if any of these limits are exceeded.
These ratings are not intended for continuous normal operation.
1Case is dened as ground leads.
*Based on typical case temperature rise 5°C above ambient.
Parameter Min. Typ. Max. Units Cpk
Frequency Range* DC 2 GHz
Gain f=0.1 GHz 19.5 20.7 22.5 dB ≥ 1.5
f=1 GHz 18 19.4 21
f=1.5 GHz 18.3 20
f=2 GHz 16 17.6 19
Magnitude of Gain Variation versus Temperature
(values are negative)
f=0.1 GHz .0015 .003 dB/°C
f=1 GHz .0024 .005
f=1.5 GHz .0028 .006
f=2 GHz .0033 .007
Input Return Loss f=0.1 GHz 35 dB
f=1 GHz 24
f=1.5 GHz 24
Output Return Loss f=0.1 GHz 27 dB
f=1 GHz 21
f=1.5 GHz 19
Reverse Isolation f=1.5 GHz 20 23 dB
Output Power @ 1 dB compression f=0.1 GHz 17.6 dBm ≥ 1.33
f=1 GHz 16 17.2
f=1.5 GHz 17.1
f=2 GHz 15.9
Saturated Output Power
(at 3dB compression)
f=0.1 GHz 19 dBm
f=1 GHz 18
f=1.5 GHz 17.5
f=2 GHz 16.5
Output IP3 f=0.1 GHz 30 34 dBm ≥ 1.33
f=1 GHz 29 33
f=1.5 GHz 27 31
Noise Figure f=0.1 GHz 3.3 4.3 dB ≥ 1.33
f=1 GHz 3.3 4.3
f=1.5 GHz 3.4 4.4
f=2 GHz 3.4
Group Delay f=1 GHz 120 psec
Recommended Device Operating Current 60 mA
Device Operating Voltage 4.2 4.4 4.6 V ≥ 1.5
Device Voltage Variation vs. Temperature at 60mA -3.2 mV/°C
Device Voltage Variation vs. Current at 25°C 3.8 mV/mA
Thermal Resistance, junction-to-case1177 °C/W
*Guaranteed specication DC-2 GHz. Low frequency cut off determined by external coupling capacitors.