ON Semiconductor BCP69T1 PNP Silicon Epitaxial Transistor ON Semiconductor Preferred Device MEDIUM POWER PNP SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT This PNP Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications. * High Current: IC = -1.0 Amp * The SOT-223 Package can be soldered using wave or reflow. * SOT-223 package ensures level mounting, resulting in improved thermal conduction, and allows visual inspection of soldered joints. The formed leads absorb thermal stress during soldering, eliminating the possibility of damage to the die. * Available in 12 mm Tape and Reel Use BCP69T1 to order the 7 inch/1000 unit reel. Use BCP69T3 to order the 13 inch/4000 unit reel. * NPN Complement is BCP68 4 1 3 CASE 318E-04, STYLE 1 TO-261AA MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating COLLECTOR 2,4 Symbol Value Unit Collector-Emitter Voltage VCEO - 20 Vdc Collector-Base Voltage VCBO - 25 Vdc Emitter-Base Voltage BASE 1 VEBO - 5.0 Vdc Collector Current IC -1.0 Adc Total Power Dissipation @ TA = 25C(1) Derate above 25C PD 1.5 12 Watts mW/C TJ, Tstg - 65 to 150 C Operating and Storage Temperature Range 2 EMITTER 3 Preferred devices are recommended choices for future use and best overall value. 1. Device mounted on a glass epoxy printed circuit board 1.575 in. x 1.575 in. x 0.059 in.; mounting pad for the collector lead min. 0.93 sq. in. DEVICE MARKING CE THERMAL CHARACTERISTICS Characteristic Symbol Max Unit RJA 83.3 C/W TL 260 10 C Sec Thermal Resistance -- Junction-to-Ambient (surface mounted) Lead Temperature for Soldering, 0.0625 from case Time in Solder Bath ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristics Symbol Min Typ Max Unit Collector-Emitter Breakdown Voltage (IC = -100 Adc, IE = 0) V(BR)CES - 25 -- -- Vdc Collector-Emitter Breakdown Voltage (IC = -1.0 mAdc, IB = 0) V(BR)CEO - 20 -- -- Vdc Emitter-Base Breakdown Voltage (IE = -10 Adc, IC = 0) V(BR)EBO - 5.0 -- -- Vdc OFF CHARACTERISTICS 1 April, 2003 - Rev. 5 Publication Order Number: BCP69T1/D BCP69T1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristics Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = - 25 Vdc, IE = 0) ICBO -- -- -10 Adc Emitter-Base Cutoff Current (VEB = - 5.0 Vdc, IC = 0) IEBO -- -- -10 Adc 50 85 60 -- -- -- -- 375 -- OFF CHARACTERISTICS ON CHARACTERISTICS DC Current Gain (IC = - 5.0 mAdc, VCE = -10 Vdc) (IC = - 500 mAdc, VCE = -1.0 Vdc) (IC = -1.0 Adc, VCE = -1.0 Vdc) hFE -- Collector-Emitter Saturation Voltage (IC = -1.0 Adc, IB = -100 mAdc) VCE(sat) -- -- - 0.5 Vdc Base-Emitter On Voltage (IC = -1.0 Adc, VCE = -1.0 Vdc) VBE(on) -- -- -1.0 Vdc fT -- 60 -- MHz DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = -10 mAdc, VCE = - 5.0 Vdc) Figure 1. hFE , CURRENT GAIN 100 70 50 VCE = -1.0 V TJ = 25C 20 -10 -100 IC, COLLECTOR CURRENT (mA) -1000 f T , CURRENT GAIN BANDWIDTH PRODUCT (MHz) TYPICAL ELECTRICAL CHARACTERISTICS 200 300 200 100 VCE = -10 V TJ = 25C f = 30 MHz 70 50 30 -10 Figure 1. DC Current Gain V, VOLTAGE (VOLTS) 160 TJ = 25C -0.8 -0.6 TJ = 25C V(BE)sat @ IC/IB = 10 V(BE)on @ VCE = -1.0 V -0.4 -0.2 0 -1.0 -1000 Figure 2. Current Gain Bandwidth Product C, CAPACITANCE (pF) -1.0 -100 IC, COLLECTOR CURRENT (mA) 120 80 Cib 40 V(CE)sat @ IC/IB = 10 Cob 0 -10 -100 -1000 IC, COLLECTOR CURRENT (mA) Cob Cib -5.0 -1.0 -1.0 -2.0 -1.5 -3.0 VR, REVERSE VOLTAGE (VOLTS) Figure 3. Saturation and "ON" Voltages Figure 4. Capacitances http://onsemi.com 2 -2.0 -4.0 -2.5 -5.0 BCP69T1 INFORMATION FOR USING THE SOT-223 SURFACE MOUNT PACKAGE MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS interface between the board and the package. With the correct pad geometry, the packages will self align when subjected to a solder reflow process. Surface mount board layout is a critical portion of the total design. The footprint for the semiconductor packages must be the correct size to insure proper solder connection 0.15 3.8 0.079 2.0 SOT-223 0.091 2.3 0.248 6.3 0.091 2.3 0.079 2.0 0.059 1.5 0.059 1.5 0.059 1.5 mm inches SOT-223 POWER DISSIPATION The power dissipation of the SOT-223 is a function of the pad size. This can vary from the minimum pad size for soldering to the pad size given for maximum power dissipation. Power dissipation for a surface mount device is determined by TJ(max), the maximum rated junction temperature of the die, RJA, the thermal resistance from the device junction to ambient; and the operating temperature, TA. Using the values provided on the data sheet for the SOT-223 package, PD can be calculated as follows. PD = the equation for an ambient temperature TA of 25C, one can calculate the power dissipation of the device which in this case is 1.5 watts. PD = 150C - 25C 83.3C/W = 1.50 watts The 83.3C/W assumes the use of the recommended footprint on a glass epoxy printed circuit board to achieve a power dissipation of 1.5 watts. Another alternative would be to use a ceramic substrate or an aluminum core board such as Thermal Clad. Using a board material such as Thermal Clad, a higher power dissipation of 1.6 watts can be achieved using the same footprint. TJ(max) - TA RJA The values for the equation are found in the maximum ratings table on the data sheet. Substituting these values into SOLDERING PRECAUTIONS * The soldering temperature and time should not exceed The melting temperature of solder is higher than the rated temperature of the device. When the entire device is heated to a high temperature, failure to complete soldering within a short time could result in device failure. Therefore, the following items should always be observed in order to minimize the thermal stress to which the devices are subjected. * Always preheat the device. * The delta temperature between the preheat and soldering should be 100C or less.* * When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference should be a maximum of 10C. * * * 260C for more than 10 seconds. When shifting from preheating to soldering, the maximum temperature gradient should be 5C or less. After soldering has been completed, the device should be allowed to cool naturally for at least three minutes. Gradual cooling should be used as the use of forced cooling will increase the temperature gradient and result in latent failure due to mechanical stress. Mechanical stress or shock should not be applied during cooling * Soldering a device without preheating can cause excessive thermal shock and stress which can result in damage to the device. http://onsemi.com 3 BCP69T1 PACKAGE DIMENSIONS SOT-223 (TO-261) CASE 318E-04 ISSUE K A F NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 4 S 1 2 3 B D L G J C 0.08 (0003) M H INCHES DIM MIN MAX A 0.249 0.263 B 0.130 0.145 C 0.060 0.068 D 0.024 0.035 F 0.115 0.126 G 0.087 0.094 H 0.0008 0.0040 J 0.009 0.014 K 0.060 0.078 L 0.033 0.041 M 0 10 S 0.264 0.287 MILLIMETERS MIN MAX 6.30 6.70 3.30 3.70 1.50 1.75 0.60 0.89 2.90 3.20 2.20 2.40 0.020 0.100 0.24 0.35 1.50 2.00 0.85 1.05 0 10 6.70 7.30 K STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR SENSEFET is a trademark of Semiconductor Components Industries, LLC. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. N. American Technical Support: 800-282-9855 Toll Free USA/Canada http://onsemi.com 4 BCP69T1/D