SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE BVcEo hee VcE(sat) fr C&yp @ 10V Ic Device Type @ 10mA Typical 1MHz Continuous @25C (Vv) Min. Max. @ Ic{mA) Voce (v) Max. @ le (mA) Ig (mA) (MHz) Typical (Pe) (mA) (mW) GES5819 40 150 GES5820 60 125 GES5821 60 125 MPSAO5 60 100 MPSA06E 80 100 MPSA12 20 50 MPSA13 30 50 MPSA14 _ 30 50 MPSA20 40 MPSA5S_ 60 4 100 MPSA56 : 80 100 MPSA65 | , 30 MPSA66 30 MPS3638 25 MPS3638A 25 MPS3702 | | 26 MPS3703 30 MPS3704 30 MPS3705 30 MPS3706 20 MPS5172 25 MPS6076 | 25 MPS6512 30 MPS6513 30 MPS6514 | 25 MPS6515 25 MPS6516 40 MPS6517 40 MPS6518 MPS6519 MPS6530 MPS6531 MPS6532 MPS6533 MPS6534 MPS6535 MPS6565 MPS6566 D39C1-6 D38H1-6 0391-6 D38L1-6 D38S1-10 D38Y1-3 D38ws-11 105> SILICON SIGNAL TRANSISTORS 4 COMPLEMENTARY PAIRS jy TO0-92 PACKAGE Mi DEVICE BVcEo hee VcE(SAT) NPN PNP (v) MIN.-MAX. @ Ico, Vee (V) (Vv) MAX. @ tc, I 50- 1001 100mA 1 COMPLEMENT 100mA MPS3703 50mA PS$3704 MPS3703 MPS6512 Me eeet 6 i 14 1 M 1 MPS6515 250-500 MPS6519 50-100 90-180 MPS6513 150-300 MPS6514 15 120 90-270 MPS6533 1 MPS6530 MPS6534 90-270 100-500 MPS60 76 76 1 1 60-500 D D38L1-3 D -3 D38L4-6 D39C4-6 108Silicon Transistors These Silicon Planar Epitaxial Passivated Complementary Tran- sistors are designed for general purpose amplifier applications. Polarities are absolute, observe PNP/NPN polarity. absolute maximum ratings: (Ta = 25C unless otherwise specified) NPN PNP UNITS Voltages Collector to Emitter MPS6512, 13 Vcro 30 _ Volts MPS6514, 15 Vero 25 Volts MPS6516, 17, 18 Vcro _ 40 Volts MPS6519 VcEO - 25 Volts Collector to Base MPS6512, 13, 14, 15 Vcso 40 _ Volts MPS6516, 17, 18 VcBo - 40 Volts MPS6519 VcBo _ 25 Volts Emitter to Base VEBO 4 4 Volts Current Collector Ic 100 100 mA Dissipation Total Power Ta < 25C Py 350 350 mW Total Power Tc < 25C Py 1 1 Watt Derating Factor Ta > 25C 2.8 2.8 mW/C Derating Factor Te > 25C 8 8 mWw/C Temperature Operating Ty -55C to +150C C Storage TstG -55C to +150C C Lead (1/16 + 1/32 from Ty 260C C case for 10 sec.) electrical characteristics: (Ta = 25C unless otherwise specified) MPS6512 Thru MPS6515 (NPN) SYMBOL Static Characteristics Collector-Emitter Breakdown Voltage (Ic = .5mA, Ig = 0) MPS6512, 13 V(BR)CEO MPS6514, 15 Vipr)CEO Emitter-Base Breakdown Voltage (Ig = 10nA, Ic = 0) V(BR)EBO Collector Cutoff Current (Vcp = 30V, IE = 0) Icpo (Vcp = 30V, Ip = 0, Ta = 60C) logo 1365 LEMITTER 2. BASE TO-92 3. COLLECTOR i 7 I 407| 482;016;019)] 3 i ai 90[i2 Ss NOTES: 1. THREE LEADS 2.CONTOUR OF PACKAGE UNCONTROLLED OUTSIDE THIS SIDE. 3.(THREE LEADS) b2 APPLIES BETWEEN L; AND Lo. b APPLIES BETWEEN L2 AND 12.70 MM (.500) FROM THE SEATING PLANE. DIAMETER IS UN- CONTROLLED IN L, AND BEYOND !2.70MM(500") FROM SEATING PLANE. MIN. MAX. UNITS 30 _ Volts 25 _ Volts 4 ~ Volts _ 50 nA 1 LAMPS6512-MPS6515 MPS6516-MPS6519 MPS6512 Thru MPS6515 (NPN) SYMBOL MIN. Static Characteristics (continued) Forward Current Transfer Ratio (Ic = 2mA, Vcr = 10V) MPS6512 her 50 MPS6513 hpp 90 MPS6514 here 150 MPS6515 her 250 (Ic = 100mA, Vcr = 10V) MPS6512 ther 30 MPS6513 Tthpp 60 MPS6514 thep 90 MPS6515 ther 150 Collector-Emitter Saturation Voltage (Ic = 50mA, Ip = 5mA) TVcE(sat) _ Dynamic Characteristics Current Gain, Bandwidth Product Uc = 2mA, Vog = 10V, f = 100 MHz) MPS6512, 13 fr MPS6514, 15 fy _ (Ic = 10mA, Vcr = 10V, f = 100 MHz) MPS6512, 13 fr - MPS6514, 15 f, ~ Collector-Base Capacitance (Vcr = 10V, Ip = 0, f = 100 kHz) Cop Noise Figure (ic = 10uA, Veg = 5V, Rs = 10K Ohms, NF BW = 15.7 kHz, f = 10 Hz to 10 kHz) 1366 TYP. 250 390 330 480 MAX. 100 180 300 500 UNITS Volts MHz pF dBMPS6512-MPS6515 MPS6516-MPS6519 MPS6515 Thru MPS6519 (PNP) SYMBOL MIN. TYP. MAX. UNITS Static Characteristics Collector-Emitter Breakdown Voltage (Ic = mA, Iz = 0) MPS6516, 17, 18 ViBR)CEO 40 _ Volts MPS6519 ViBR)CEO 25 _ _ Volts Emitter-Base Breakdown Voltage (x = 10uA, Ic = 0) V(BR)EBO 4 - _ Volts Collector Cutoff Current (Vos = 30V, Ig = 0) MPS6516, 17, 18 IcBo _ _ 50 nA (Vcp = 20V, Iz = 0) MPS6519 IcBo ~ 50 nA (Vog = 30V, Ig = 0, Ta = 60C) MPS6516, 17, 18 lcBo _ 1 vA (Vcg = 20V, Ip = 0, Ta = 60C) MPS6519 Icpo 1 uA Forward Current Transfer Ratio (Ic = 2mA, Vcr = 10V) MPS6516 hrEe 50 _ 100 MPS6517 her 90 180 MPS6518 hrpr 150 -- 300 MPS6519 hprr 250 500 (ic = 100mA, Vcr = 10V) MPS6516 thre 30 _ MPS6517 thee 60 MPS6518 thre 90 MPS6519 ther 150 Collector-Emitter Saturation Voltage (Ic = 50mA, Ig = 5 mA) + VcR(sat) - 5 Volts Dynamic Characteristics Current Gain Bandwidth Product (ic = 2mA, Vex = 10V, f = 100 MHz) MPS6516, 17 fr 200 MHz MPS6518, 19 fr 340 (Ic = 10mA, Vor = 10V, f = 100 MHz) MPS6516, 17 fo 270 MPS6518, 19 frp 420 _ Collector-Base Capacitance (Voz = 10V, Ip = 0, f = 100 KHz) Cob 4 pF Noise Figure (Ic = 10uA, Veg = 5V, Rs = 10KQ _ 2 dB BW = 15.7kHz, f = 10Hz to 10kHz) +Pulse Width < 300us, Duty Cycle < 2%. 1367