SILICON
NPN TRANSISTOR
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Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 9632
Issue 1
Page 1 of 3
2N2891
• V(BR)CEO = 80V (Min).
• Hermetic TO-39 Metal Package.
• Ideally Suited For Low Frequency Large Signal
Applications (High Voltage).
•
Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise stated)
VCBO Collector – Base Voltage 100V
VCEO Collector – Emitter Voltage 80V
VEBO Emitter – Base Voltage 5V
IC Continuous Collector Current 3A
ICM Peak Collector Current 5A
IB Base Current 0.5A
PD Total Power Dissipation at TA = 25°C 0.8W
Derate Above 25°C 4.57mW/°C
PD Total Power Dissipation at TC = 25°C 5W
Derate Above 25°C 28.6mW/°C
TJ Junction Temperature Range -65 to +200°C
Tstg Storage Temperature Range -65 to +200°C
THERMAL PROPERTIES
Symbols Parameters Max. Units
RθJA Thermal Resistance, Junction To Ambient 218.75 °C/W
RθJC
Thermal Resistance, Junction To Case 35 °C/W
SILICON
NPN TRANSISTOR
2N2891
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 9632
Issue 1
Page 2 of 3
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
Symbols Parameters Test Conditions Min.
Typ Max.
Units
V(BR)CEO
(1)
Collector-Emitter
Breakdown Voltage IC = 10mA IB = 0 80
V(BR)CBO
(1)
Collector-Base
Breakdown Voltage IC = 0.1mA IE = 0 100
V
ICEO Collector Cut-Off Current VCE = 60V IB = 0 50
VCE = 60V VBE = -2V 0.1
TA = 150°C 100
ICEX Collector Cut-Off Current
VCE = 90V VBE = -2V 100
IEBO Emitter Cut-Off Current VEB = 5V IC = 0 10
µA
IC = 100mA VCE = 2V 35
IC = 1.0A VCE = 2V 50 150
hFE
(1)
Forward-current transfer
ratio
IC = 2A VCE = 5V 40
IC = 1.0A IB = 100mA 0.5
VCE(sat)
(1)
Collector-Emitter Saturation
Voltage IC = 2A IB = 200mA 0.75
IC = 1.0A IB = 100mA 1.2
VBE(sat)
(1)
Base-Emitter Saturation
Voltage IC = 2A IB = 200mA 1.3
V
DYNAMIC CHARACTERISTICS
IC = 50mA VCE = 10V
hfe Small-Signal Current Gain
f = 1.0KHz
50 350
IC = 200mA VCE = 10V
fT Transition Frequency
f = 20MHz
30 MHz
VCB = 10V IE = 0
Cobo Output Capacitance
f = 1.0MHz
70 100 pF
IC = 1.0A VCC = 20V
ton Turn-On Time IB1 = 50mA 0.3
IC = 1.0A VCC = 20V
toff Turn-Off Time IB1 = 50mA IB2 = -50mA 1.5
µs
Notes
NotesNotes
Notes
(1) Pulse Width ≤ 380us, δ ≤ 2%
SILICON
NPN TRANSISTOR
2N2891
Semelab Limited
Semelab LimitedSemelab Limited
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com Website: http://www.semelab-tt.com
Document Number 9632
Issue 1
Page 3 of 3
MECHANICAL DATA
Dimensions in mm (inches)
TO
-
39 (TO
-
205AD
) METAL PACKAGE
Underside View
Pin 1 - Emitter Pin 2 - Base Pin 3 - Collector
0.89
(0.035)max.
12.70
(0.500)
min. 0.41 (0.016)
0.53 (0.021)
dia.
5.08 (0.200)
typ.
0.71 (0.028)
0.86 (0.034)
2.54
(0.100)
45°
6.10 (0.240)
6.60 (0.260)
8.51 (0.34)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
123
0.74 (0.029)
1.14 (0.045)
