TIP42 / TIP42C — PNP Epitaxial Silicon Transistor
Publication Order Number:
TIP42C/D
© 2000 Semiconductor Components Industries, LLC.
November-2017, Rev. 2
TIP42 / TIP42C
PNP Epitaxial Silicon Transistor
Features
Medium Power Linear Switching Applications
Complement to TIP41 Series
Ordering Information
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating cond iti ons an d s tres sing the parts to these levels i s n ot re co mme nde d. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TC = 25°C unless otherwise noted.
Part Number Top Mark Package Packing Method
TIP42 TIP42 TO-220 3L (Single Gauge) Bulk
TIP42C TIP42C TO-220 3L (Single Gauge) Bulk
TIP42CTU TIP42C TO-220 3L (Single Gauge) Rail
Symbol Parameter Value Unit
VCBO Collector-Base Voltage TIP42 -40 V
TIP42C -100
VCEO Collector-Emitter Voltage TIP42 -40 V
TIP42C -100
VEBO Emitter-Base Vo ltage -5 V
ICCollector Current (DC) -6 A
ICP Collector Current (Pulse) -10 A
IBBase Current -2 A
TJJunction Temperature 150 °C
TSTG Storage Temperature Range -65 to 150 °C
1.Base 2.Collector 3.Emitter
1TO-220
TIP42 / TIP42C — PNP Epitaxial Silicon Transistor
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Thermal Characteristics
Values are at TC = 25°C unless otherwise noted.
Electrical Characteristics
Values are at TC = 25°C unless otherwise noted.
Note:
1. Pulse test: pw300 μs, duty cycle 2%.
Symbol Parameter Value Unit
PC Collector Dissipation (TC = 25°C) 65 W
Collector Dissipation (TA = 25°C) 2
Symbol Parameter Conditions Min. Max. Unit
VCEO(sus) Collector-Emitter Sustaining
Voltage(1) TIP42 IC = -30 m A, IB = 0 -40 V
TIP42C -100
ICEO Collector Cut-Off Current TIP42 VCE = -30 V, IB = 0-0.7
mA
TIP42C VCE = -60 V, IB = 0 -0.7
ICES Collector Cut-Off Current TIP42 VCE = -40 V, VEB = 0 -400 μA
TIP42C VCE = -100 V, VEB = 0 -400
IEBO Emitter Cut-Off Current VEB = -5 V, IC = 0 -1 mA
hFE DC Current Gain(1) VCE = -4 V, IC = -0.3 A 30
VCE = -4 V, IC = -3 A 15 75
VCE(sat) Collector-Emitter Saturation Voltage(1) IC = -6 A, IB = -600 mA -1.5 V
VBE(on) Base-Emitter On Voltage(1) VCE = -4 V, IC = -6 A -2.0 V
fT Current Gain Bandwidth Product VCE = -10 V, IC = -500 mA,
f = 1 MHz 3.0 MHz
TIP42 / TIP42C — PNP Epitaxial Silicon Transistor
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Typical Performance Characteristics
Figure 1. DC Current Gain Figure 2. Base-Emitter Saturation Voltage and
Collector-Emitter Saturation Voltage
Figure 3. Safe Operating Area Figure 4. Power Derating
-0.01 -0.1 -1 -10
1
10
100
1000
VCE = -4V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
-0.01 -0.1 -1 -10 -100
-0.0
-0.4
-0.8
-1.2
-1.6
-2.0 IC/IB = 10
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
-1 -10 -100
-0.1
-1
-10
-100
TIP42C
TIP42B
TIP42A
TIP42
IC(MAX) (DC)
IC(MAX) (PULSE)
5ms
1ms
0.5ms
IC[A], COLLECTOR CURRENT
VCE[V], COLLEC TOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175
0
20
40
60
80
100
PC[W], POWER DISSIPATION
TC[oC], CASE TEMPERATURE
TIP42 / TIP42C — PNP Epitaxial Silicon Transistor
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4
Physical Dimensions
Figure 5. TO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
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