VS-FC420SA10 www.vishay.com Vishay Semiconductors SOT-227 Power Module Single Switch - Power MOSFET, 420 A FEATURES * ID > 420 A, TC = 25 C * TrenchFET(R) power MOSFET * Low input capacitance (Ciss) * Reduced switching and conduction losses * Ultra low gate charge (Qg) * Avalanche energy rated (UIS) SOT-227 * UL approved file E78996 * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS VDSS 100 V RDS(on) 1.3 m ID (1) 330 A at 90 C Type Modules - MOSFET Package SOT-227 ABSOLUTE MAXIMUM RATINGS (TC = 25 C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS 100 V MOSFET Drain to source voltage VDSS Continuous drain current, VGS at 10 V Pulsed drain current ID TC = 25 C TC = 90 C IDM (1) Power dissipation PD Gate to source voltage VGS Single pulse avalanche energy EAS Single pulse avalanche current IAS 435 330 A 1130 TC = 25 C 652 W 20 V TC = 25 C, L = 10 mH, VGS = 10 V 11 500 mJ TC = 25 C, L = 10 mH, VGS = 10 V 48 A MODULE Insulation voltage (RMS) VISOL Operating junction temperature range TJ any terminal to case, t = 1 min 2500 V -55 to +175 C Notes (1) Limited at maximum junction temperature Revision: 10-Sep-2019 Document Number: 95793 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FC420SA10 www.vishay.com Vishay Semiconductors THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Junction and storage temperature range MIN. TYP. MAX. UNITS TJ, TStg -55 - 175 C - - 0.23 Flat, greased surface - 0.1 - - 30 - g Torque to terminal - - 1.1 (9.7) Nm (lbf.in) Torque to heatsink - - 1.8 (15.9) Nm (lbf.in) Junction to case MOSFET RthJC Case to heat sink Module RthCS TEST CONDITIONS Weight Mounting torque Case style C/W SOT-227 ELECTRICAL CHARACTERISTICS (TJ = 25 C unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS 100 - - V VGS = 10 V, ID = 200 A - 1.3 2.15 m VDS = VGS, ID = 750 A 2.2 2.9 3.8 V VDS = 20 V, ID = 20 A, VGS = 10 V - 94 - S Drain to source breakdown voltage V(BR)DSS VGS = 0 V, ID = 750 A Static drain to source on-resistance RDS(on) Gate threshold voltage VGS(th) Forward transconductance gfs Drain to source leakage current IDSS Gate to source leakage IGSS Total gate charge Qg Gate to source charge Qgs Gate to drain ("Miller") charge Qgd Turn-on delay time td(on) Rise time Turn-off delay time Fall time tr td(off) tf Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss VDS = 100 V, VGS = 0 V - 0.6 4 VDS = 100 V, VGS = 0 V, TJ = 125 C - 32 - VGS = 20 V - - 350 ID = 200 A VDS = 50 V VGS = 10 V - 375 - - 84 - - 138 - - 45 - - 275 - - 152 - - 172 - - 17.3 - - 9.2 - - 0.9 - VDD = 50 V ID = 100 A Rg = 1.2 VGS = 10 V VGS = 0 V VDS = 25 V f = 1 MHz A nA nC ns nF SOURCE-DRAIN RATINGS AND CHARACTERISTICS (TJ = 25 C unless otherwise specified) PARAMETER Continuous source current (body diode) Pulsed source current (body diode) SYMBOL IS ISM TEST CONDITIONS MOSFET symbol showing the integral reverse p-n junction diode D MIN. TYP. MAX. - - 435 UNITS A G - - 1130 - 0.91 1.5 V - 171 - ns - 740 - nC - 8.7 - A S Diode forward voltage VSD Reverse recovery time trr Reverse recovery charge Qrr Reverse recovery current IRM IS = 200 A, VGS = 0 V TJ = 25 C, IF = IS = 50 A, dI/dt = 100 A/s, VR = 50 V Revision: 10-Sep-2019 Document Number: 95793 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FC420SA10 Vishay Semiconductors 180 2.6 160 2.4 RDS(on) - Drain-to-Source On-Resistance (m) Allowable Case Temperature (C) www.vishay.com 140 120 DC 100 80 60 40 20 VGS = 10V 2.2 ID = 100 A 2 1.8 1.6 1.4 1.2 1 0 0 50 100 150 200 250 300 350 400 450 500 20 40 60 80 100 120 140 160 180 ID - Continuous Drain Current (A) TJ (C) Fig. 1 - Maximum Continuous Drain Current vs. Case Temperature Fig. 4 - Typical Drain-to-Source On-Resistance vs. Temperature 400 400 VGS = 10 V thru 7 V 350 300 300 VGS = 5 V TJ = 175 C 250 ID (A) 250 ID (A) VDS = 20 V 350 200 200 TJ = 125 C 150 150 100 100 50 50 0 TJ = 25 C 0 0 1 2 3 4 5 1 2 3 Fig. 2 - Typical Drain to Source Current Output Characteristics at TJ = 25 C 5 6 7 Fig. 5 - Typical Transfer Characteristics 400 4.0 VGS = 10 V VGS = 9 V VGS = 8 V VGS = 7 V VGS = 6 V VGS = 5 V 300 250 3.5 TJ = 25 C 3.0 VGSth (V) 350 ID (A) 4 VGS (V) VDS (V) 200 150 2.5 TJ = 125 C 2.0 100 1.0 50 0.5 0 TJ = 175 C 1.5 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VDS (V) ID (mA) Fig. 3 - Typical Drain to Source Current Output Characteristics at TJ = 125 C Fig. 6 - Typical Gate Threshold Voltage Characteristics Revision: 10-Sep-2019 Document Number: 95793 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FC420SA10 www.vishay.com Vishay Semiconductors 2 200 TJ = 25 C 1.9 180 1.8 Turn-Off Time (ns) 1.7 RDS(on) (m) td(off) at 125 C 160 1.6 1.5 1.4 ID = 100 A 1.3 140 100 tf at 25 C 80 tf at 125 C 60 1.2 40 1.1 20 1 td(off) at 25 C 120 0 5 6 7 8 9 10 0 20 40 60 VGS (V) 120 Fig. 10 - Typical Turn off Switching Time vs. Id VDD = 50 V, Rg = 1.2 , VGS = 10 V, L = 500 H 400 300 350 270 240 Turn-On Time (ns) TJ = 175 C 250 IS (A) 100 ID (A) Fig. 7 - Typical Drain-State Resistance vs. Gate-to-Source Voltage 300 80 200 TJ = 125 C 150 TJ = 25 C 100 210 180 tr at 25 C 150 tr at 125 C 120 90 60 50 td(on) at 125 C 30 0 td(on) at 25 C 0 0 0.2 0.4 0.6 0.8 1.0 1.2 0 1.4 20 40 60 80 100 120 VSD (V) ID (A) Fig. 8 - Typical Body Diode Source-to-Drain Current Characteristics Fig. 11 - Typical Turn-on Switching Time vs. Id VDD = 50 V, Rg = 1.2 , VGS = 10 V, L = 500 H TJ = 175 C 1 IDSS (mA) PD - Power Dissipation (W) 10 0.1 TJ = 125 C 0.01 0.001 TJ = 25 C 0.0001 20 40 60 80 100 VDSS (V) Fig. 9 - Typical Zero Gate Voltage Drain Current 700 650 600 550 500 450 400 350 300 250 200 150 100 50 0 0 25 50 75 100 125 150 175 200 TJ (C) Fig. 12 - Power Dissipation Curve Revision: 10-Sep-2019 Document Number: 95793 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FC420SA10 www.vishay.com Vishay Semiconductors ZthJC - Thermal Impedance Junction to Case (C/W) 1 0.1 0.50 0.20 0.10 0.05 0.02 0.01 DC 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 13 - Maximum Thermal Impedance Junction-to-Case Characteristics IDS - Drain-Source Current (A) 1000 tp N) d ite DS yR (O tp b 1m s s Lim 100 =1 00 = tp = 500 s 10 1 TC = 25 C TJ = 175 C Single Pulse BVDSS Limited 0.1 0.1 1 10 100 VDS - Drain-Source Voltage (V) Fig. 14 - Safe Operating Area ORDERING INFORMATION TABLE Device code VS- F C 420 S A 10 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - MOSFET module 3 - MOSFET die generation 4 - Current rating (420 = 420 A) 5 - Circuit configuration (S = single switch) 6 - Package indicator (SOT-227 standard insulated base) 7 - Voltage rating (10 = 100 V) Quantity per tube is 10, M4 screw and washer included Revision: 10-Sep-2019 Document Number: 95793 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-FC420SA10 www.vishay.com Vishay Semiconductors CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING D (3) 3 (D) 2 (G) 4 (S) 1 (S) G (2) S (1-4) Lead Assignment Single switch (S) S (D) 4 3 1 2 (S) (G) LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95423 Packaging information www.vishay.com/doc?95425 Revision: 10-Sep-2019 Document Number: 95793 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors SOT-227 Generation 2 DIMENSIONS in millimeters (inches) 37.80 (1.488) 38.30 (1.508) O 4.10 (0.161) O 4.30 (0.169) -A- 4 x M4 nuts 6.25 (0.246) 6.50 (0.256) 12.50 (0.492) 13.00 (0.512) 7.45 (0.293) 7.60 (0.299) 14.90 (0.587) 15.20 (0.598) 24.70 (0.972) 25.70 (1.012) R full 2.07 (0.081) 2.12 (0.083) 29.80 (1.173) 30.50 (1.200) 31.50 (1.240) 32.10 (1.264) 4x 1.90 (0.075) 2.20 (0.087) 7.70 (0.303) 8.30 (0.327) 0.25 (0.010) M C A M B M 4.10 (0.161) 4.50 (0.177) 5.33 (0.210) 5.96 (0.234) 11.60 (0.457) 12.30 (0.484) 24.70 (0.972) 25.50 (1.004) Note * Controlling dimension: millimeter Document Number: 95423 1 For technical questions, contact: DiodesAmericas@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Revision: 19-May-2020 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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