VS-FC420SA10
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Revision: 10-Sep-2019 1Document Number: 95793
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SOT-227 Power Module
Single Switch - Power MOSFET, 420 A
FEATURES
•I
D > 420 A, TC = 25 °C
• TrenchFET® power MOSFET
• Low input capacitance (Ciss)
• Reduced switching and conduction losses
• Ultra low gate charge (Qg)
• Avalanche energy rated (UIS)
• UL approved file E78996
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Notes
(1) Limited at maximum junction temperature
PRIMARY CHARACTERISTICS
VDSS 100 V
RDS(on) 1.3 m
ID (1) 330 A at 90 °C
Type Modules - MOSFET
Package SOT-227
SOT-227
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
MOSFET
Drain to source voltage VDSS 100 V
Continuous drain current, VGS at 10 V ID
TC = 25 °C 435
ATC = 90 °C 330
Pulsed drain current IDM (1) 1130
Power dissipation PDTC = 25 °C 652 W
Gate to source voltage VGS ± 20 V
Single pulse avalanche energy EAS TC = 25 °C, L = 10 mH, VGS = 10 V 11 500 mJ
Single pulse avalanche current IAS TC = 25 °C, L = 10 mH, VGS = 10 V 48 A
MODULE
Insulation voltage (RMS) VISOL any terminal to case, t = 1 min 2500 V
Operating junction temperature range TJ-55 to +175 °C
VS-FC420SA10
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Revision: 10-Sep-2019 2Document Number: 95793
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THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Junction and storage temperature range TJ, TStg -55 - 175 °C
Junction to case MOSFET RthJC - - 0.23 °C/W
Case to heat sink Module RthCS Flat, greased surface - 0.1 -
Weight -30 - g
Mounting torque Torque to terminal - - 1.1 (9.7) Nm (lbf.in)
Torque to heatsink - - 1.8 (15.9) Nm (lbf.in)
Case style SOT-227
ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Drain to source breakdown voltage V(BR)DSS VGS = 0 V, ID = 750 μA 100 - - V
Static drain to source on-resistance RDS(on) VGS = 10 V, ID = 200 A - 1.3 2.15 m
Gate threshold voltage VGS(th) VDS = VGS, ID = 750 μA 2.2 2.9 3.8 V
Forward transconductance gfs VDS = 20 V, ID = 20 A, VGS = 10 V - 94 - S
Drain to source leakage current IDSS
VDS = 100 V, VGS = 0 V - 0.6 4 μA
VDS = 100 V, VGS = 0 V, TJ = 125 °C - 32 -
Gate to source leakage IGSS VGS = ± 20 V - - ± 350 nA
Total gate charge QgID = 200 A
VDS = 50 V
VGS = 10 V
- 375 -
nCGate to source charge Qgs -84 -
Gate to drain (“Miller”) charge Qgd - 138 -
Turn-on delay time td(on) VDD = 50 V
ID = 100 A
Rg = 1.2
VGS = 10 V
-45 -
ns
Rise time tr- 275 -
Turn-off delay time td(off) - 152 -
Fall time tf- 172 -
Input capacitance Ciss VGS = 0 V
VDS = 25 V
f = 1 MHz
- 17.3 -
nFOutput capacitance Coss -9.2 -
Reverse transfer capacitance Crss -0.9 -
SOURCE-DRAIN RATINGS AND CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Continuous source current (body diode) ISMOSFET symbol
showing the integral
reverse p-n junction
diode
- - 435
A
Pulsed source current (body diode) ISM - - 1130
Diode forward voltage VSD IS = 200 A, VGS = 0 V - 0.91 1.5 V
Reverse recovery time trr TJ = 25 °C, IF = IS = 50 A,
dI/dt = 100 A/μs, VR = 50 V
- 171 - ns
Reverse recovery charge Qrr - 740 - nC
Reverse recovery current IRM -8.7 - A
S
D
G
VS-FC420SA10
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Revision: 10-Sep-2019 3Document Number: 95793
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Fig. 1 - Maximum Continuous Drain Current vs. Case Temperature
Fig. 2 - Typical Drain to Source Current Output Characteristics
at TJ = 25 °C
Fig. 3 - Typical Drain to Source Current Output Characteristics
at TJ = 125 °C
Fig. 4 - Typical Drain-to-Source On-Resistance vs. Temperature
Fig. 5 - Typical Transfer Characteristics
Fig. 6 - Typical Gate Threshold Voltage Characteristics
0
20
40
60
80
100
120
140
160
180
0 50 100150200250300350400450500
Allowable Case Temperature (°C)
ID- Continuous Drain Current (A)
DC
0
50
100
150
200
250
300
350
400
012345
ID(A)
VDS(V)
VGS = 10 V thru 7 V
VGS = 5 V
0
50
100
150
200
250
300
350
400
0 0.10.20.30.40.50.60.70.80.9 1
ID(A)
VDS(V)
VGS = 10 V
VGS = 9 V
VGS = 8 V
VGS = 7 V
VGS = 6 V
VGS = 5 V
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
20 40 60 80 100 120 140 160 180
RDS(on) - Drain-to-Source
On-Resistance (mΩ)
TJ(°C)
ID= 100 A
VGS = 10V
0
50
100
150
200
250
300
350
400
1234567
ID(A)
VGS(V)
TJ= 25 °C
TJ= 175 °C
VDS= 20 V
TJ= 125 °C
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0.20.40.60.81.01.21.41.61.82.0
VGSth (V)
ID(mA)
TJ= 25 °C
TJ= 125 °C
TJ= 175 °C
VS-FC420SA10
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Revision: 10-Sep-2019 4Document Number: 95793
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Fig. 7 - Typical Drain-State Resistance vs. Gate-to-Source Voltage
Fig. 8 - Typical Body Diode Source-to-Drain Current Characteristics
Fig. 9 - Typical Zero Gate Voltage Drain Current
Fig. 10 - Typical Turn off Switching Time vs. Id
VDD = 50 V, Rg = 1.2 , VGS = ± 10 V, L = 500 μH
Fig. 11 - Typical Turn-on Switching Time vs. Id
VDD = 50 V, Rg = 1.2 , VGS = ± 10 V, L = 500 μH
Fig. 12 - Power Dissipation Curve
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
5678910
R
DS(on)
(m
Ω
)
V
GS
(V)
ID= 100 A
TJ=25 °C
0
50
100
150
200
250
300
350
400
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
IS(A)
VSD(V)
TJ= 25 °C
TJ= 175 °C
TJ= 125 °C
0.0001
0.001
0.01
0.1
1
10
20 40 60 80 100
IDSS (mA)
VDSS (V)
TJ= 25 °C
TJ= 125 °C
TJ= 175 °C
0
20
40
60
80
100
120
140
160
180
200
020406080100120
Turn-Off Time (ns)
I
D
(A)
tfat 25 °C
td(off) at 125 °C
td(off) at 25 °C
tfat 125 °C
0
30
60
90
120
150
180
210
240
270
300
020406080100120
Turn-On Time (ns)
I
D
(A)
trat 25 °C
td(on) at 125 °C
td(on) at 25 °C
trat 125 °C
0
50
100
150
200
250
300
350
400
450
500
550
600
650
700
0 25 50 75 100 125 150 175 200
PD - Power Dissipation (W)
TJ(°C)
VS-FC420SA10
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Revision: 10-Sep-2019 5Document Number: 95793
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Fig. 13 - Maximum Thermal Impedance Junction-to-Case Characteristics
Fig. 14 - Safe Operating Area
ORDERING INFORMATION TABLE
0.001
0.01
0.1
1
0.00001 0.0001 0.001 0.01 0.1 1 10
ZthJC - Thermal Impedance
Junction to Case (°C/W)
t1- Rectangular Pulse Duration (s)
0.50
0.20
0.10
0.05
0.02
0.01
DC
0.1
1
10
100
1000
0.1 1 10 100
BVDSS Limited
V
DS
- Drain-Source Voltage (V)
I
DS
- Drain-Source Current (A)
TJ = 175 °C
TC = 25 °C
Single Pulse
Limited by R
DS (ON)
tp = 100 μs
t
p
= 1 ms
tp =
500 μs
1
- MOSFET module
- Vishay Semiconductors product
2
- MOSFET die generation
3
- Current rating (420 = 420 A)
4
- Circuit configuration (S = single switch)
5
- Package indicator (SOT-227 standard insulated base)
6
- Voltage rating (10 = 100 V)
7
Device code
51 32 4 6 7
VS- F C 420 AS10
Quantity per tube is 10, M4 screw and washer included
VS-FC420SA10
www.vishay.com Vishay Semiconductors
Revision: 10-Sep-2019 6Document Number: 95793
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
CIRCUIT CONFIGURATION
CIRCUIT CIRCUIT
CONFIGURATION CODE CIRCUIT DRAWING
Single switch S
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95423
Packaging information www.vishay.com/doc?95425
Outline Dimensions
www.vishay.com Vishay Semiconductors
Revision: 19-May-2020 1Document Number: 95423
For technical questions, contact: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SOT-227 Generation 2
DIMENSIONS in millimeters (inches)
Note
• Controlling dimension: millimeter
37.80 (1.488)
38.30 (1.508)
-A-
12.50 (0.492)
13.00 (0.512)
7.45 (0.293)
7.60 (0.299)
Ø 4.10 (0.161)
Ø 4.30 (0.169)
29.80 (1.173)
30.50 (1.200)
31.50 (1.240)
32.10 (1.264)
14.90 (0.587)
15.20 (0.598)
6.25 (0.246)
6.50 (0.256) 24.70 (0.972)
25.70 (1.012)
2.07 (0.081)
2.12 (0.083)
R full
1.90 (0.075)
2.20 (0.087)
7.70 (0.303)
8.30 (0.327)
4 x
4.10 (0.161)
4.50 (0.177)
M M M
0.25 (0.010) CA B
4 x M4 nuts
11.60 (0.457)
12.30 (0.484)
24.70 (0.972)
25.50 (1.004)
5.33 (0.210)
5.96 (0.234)
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