EMA3 / UMA3N / FMA3A PNP -100mA -50V Complex Digital Transistors (Bias Resistor Built-in Transistors) Datasheet lOutline Parameter Tr1 and Tr2 VCEO -50V -100mA 4.7kW IC(MAX.) R1 EMT5 UMT5 (5) (3) (2) (1) (4) (4) (1) (2) (3) (5) EMA3 (SC-107BB) UMA3N SOT-353 (SC-88A) SMT5 (1) lFeatures (2) 1) Built-In Biasing Resistors. 2) Two DTA143T chips in one package. 3) Emitter-common type. 4) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit). 5) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of completely eliminating parasitic effects. 6) Only the on/off conditions need to be set for operation, making the circuit design easy. 7) Lead Free/RoHS Compliant. (5) (4) (3) FMA3A (SC-74A) lInner circuit EMA3 / UMA3N Base (3) (4) Collector lApplication Emitter (2) FMA3A Base (1) Base (3) (5) Collector (2) Collector Emitter (4) Base (5) (1) Collector Interface circuit, Driver circuit lPackaging specifications Package Package size (mm) Taping code EMA3 EMT5 1616 T2R 180 8 8,000 A3 UMA3N UMT5 2021 TR 180 8 3,000 A3 FMA3A SMT5 2928 T148 180 8 3,000 A3 Part No. www.rohm.com (c) 2012 ROHM Co., Ltd. All rights reserved. 1/6 Basic Reel size Tape width ordering (mm) (mm) unit (pcs) Marking 2012.06 - Rev.B EMA3 / UMA3N / FMA3A lAbsolute maximum ratings (Ta = 25C) Parameter Symbol Values Unit Collector-base voltage VCBO -50 V Collector-emitter voltage VCEO -50 V Emitter-base voltage VEBO -5 V IC(MAX.) *1 -100 mA 150 (Total) *3 mW 300 (Total) *4 mW Tj 150 C Tstg -55 to +150 C Collector current Collector Power dissipation EMA3 / UMA3N PC FMA3A Junction temperature Range of storage temperature *2 lElectrical characteristics(Ta = 25C) Parameter Symbol Collector-base breakdown voltage BVCBO Collector-emitter breakdown voltage Emitter-base breakdown voltage Min. Typ. Max. Unit IC= -50mA -50 - - V BVCEO IC= -1mA -50 - - V BVEBO IE= -50mA -5 - - V Collector cut-off current ICBO VCB = -50V - - -0.5 mA Emitter cut-off current IEBO VEB = -4V - - -0.5 mA VCE(sat) IC / IB= -5mA / -0.25mA - - -0.3 V DC current gain hFE VCE= -5V , IC= -1mA , 100 250 600 - Input resistance R1 - 3.29 4.7 6.11 kW Transition frequency fT *1 VCE = -10V, IE = 5mA, f = 100MHz - 250 - MHz Collector-emitter saturation voltage Conditions *1 Characteristics of built-in transistor *2 Each terminal mounted on a reference footprint *3 120mW per element must not be exceeded. *4 200mW per element must not be exceeded. 2/6 2012.06 - Rev.B EMA3 / UMA3N / FMA3A lElectrical characteristic curves(Ta = 25C) Fig.2 Grounded emitter output characteristics Fig.1 Grounded emitter propagation characteristics -10 IB= -100 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : Ic (mA) VCE= -5V -1 -0.1 -500A Ta=25C Ta=100C 25C -40C -0.01 -0.001 -450A -400A -80 -350A -300A -60 -250A -200A -40 -150A -100A -20 -50A 0 0 -0.5 -1 -1.5 -2 0A 0 BASE TO EMITTER VOLTAGE : VBE (V) -2 -4 -6 -8 -10 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.4 Collector-emitter saturation voltage vs. Collector Current DC CURRENT GAIN : hFE COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Fig.3 DC Current gain vs. Collector Current COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) 3/6 2012.06 - Rev.B EMA3 / UMA3N / FMA3A lDimensions (Unit : mm) D EMT5 A x c S A Lp Lp HE L E L b A1 y S l1 A e1 e S e b2 Patterm of terminal position areas DIM A1 A b c D E e HE L Lp x y DIM e1 b2 l1 MILIMETERS MIN MAX 0.00 0.10 0.45 0.55 0.17 0.27 0.08 0.18 1.50 1.70 1.10 1.30 0.50 1.50 1.70 0.10 0.30 0.35 0.10 0.10 MILIMETERS MIN MAX 1.25 0.37 0.45 INCHES MIN 0 0.018 0.007 0.003 0.059 0.043 MAX 0.004 0.022 0.011 0.007 0.067 0.051 0.02 0.059 0.004 - 0.067 0.012 0.014 0.004 0.004 INCHES MIN MAX 0.049 - 0.015 0.018 Dimension in mm/inches 4/6 2012.06 - Rev.B EMA3 / UMA3N / FMA3A lDimensions (Unit : mm) UMT5 D A e c x Lp L1 A3 S A e e1 l1 y S A1 A b HE E Q S b2 Patterm of terminal position areas DIM A A1 A3 b c D E e HE L1 Lp Q x y DIM e1 b2 l1 MILIMETERS MIN MAX 0.80 1.00 0.00 0.10 0.25 0.15 0.30 0.10 0.20 1.90 2.10 1.15 1.35 0.65 2.00 2.20 0.20 0.50 0.25 0.55 0.10 0.30 0.10 0.10 MILIMETERS MIN MAX 1.55 0.40 0.65 INCHES MIN 0.031 0 MAX 0.039 0.004 0.01 0.006 0.004 0.075 0.045 0.012 0.008 0.083 0.053 0.03 0.079 0.008 0.01 0.004 - 0.087 0.02 0.022 0.012 0.004 0.004 INCHES MIN MAX 0.06 - 0.016 0.026 Dimension in mm/inches 5/6 2012.06 - Rev.B EMA3 / UMA3N / FMA3A lDimensions (Unit : mm) SMT5 D A e c L1 Lp HE E Q b A3 x S A y S A1 l1 A e1 e S b2 Patterm of terminal position areas DIM A A1 A3 b c D E e HE L1 Lp Q x y DIM e1 b2 l1 MILIMETERS MIN MAX 1.00 1.30 0.00 0.10 0.25 0.25 0.40 0.09 0.25 2.80 3.00 1.50 1.80 0.95 2.60 3.00 0.30 0.60 0.40 0.70 0.20 0.30 0.20 0.10 MILIMETERS MIN MAX 2.10 0.60 0.90 INCHES MIN 0 MAX 0.051 0.004 0.01 0.01 0.004 0.11 0.059 0.016 0.01 0.118 0.071 0.04 0.102 0.012 0.016 0.008 - 0.118 0.024 0.028 0.012 0.008 0.004 INCHES MIN MAX 0.08 - 0.024 0.035 Dimension in mm/inches 6/6 2012.06 - Rev.B Notice Notes No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. 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