P4SMA Series www.vishay.com Vishay General Semiconductor Surface Mount TRANSZORB(R) Transient Voltage Suppressors FEATURES * Low profile package * Ideal for automated placement * Glass passivated chip junction * Available in uni-directional and bi-directional * 400 W peak pulse power capability with a 10/1000 s waveform, repetitive rate (duty cycle): 0.01 % (300 W above 91 V) * Excellent clamping capability * Very fast response time DO-214AC (SMA) * Low incremental surge resistance * Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C * AEC-Q101 qualified * Material categorization: For definitions of compliance please see www.vishay.com/doc?99912 PRIMARY CHARACTERISTICS VWM 6.4 V to 459 V TYPICAL APPLICATIONS VBR (uni-directional) 6.8 V to 540 V VBR (bi-directional) 6.8 V to 220 V PPPM 400 W, 300 W PD 3.3 W Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, and telecommunication. IFSM (uni-directional only) 40 A TJ max. 150 C Polarity Uni-directional, bi-directional Package DO-214AC (SMA) MECHANICAL DATA DEVICES FOR BI-DIRECTION APPLICATIONS For bi-directional devices use CA suffix (e.g. P4SMA10CA). Electrical characteristics apply in both directions. Case: DO-214AC (SMA) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant and commercial grade Base P/NHE3 - RoHS compliant and AEC-Q101 qualified Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified ("_X" denotes revision code e.g. A, B, .....) Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: For uni-directional types the band denotes cathode end, no marking on bi-directional types MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER Peak power dissipation with a 10/1000 s waveform Peak pulse current with a 10/1000 s waveform (1) (1)(2) (fig. 1) (fig. 3) Power dissipation on infinite heatsink at TA = 50 C Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2) Operating junction and storage temperature range SYMBOL VALUE UNIT PPPM 400 W IPPM See next table A PD 3.3 W IFSM 40 A TJ, TSTG - 65 to + 150 C Notes (1) Non-repetitive current pulse, per fig. 3 and derated above T = 25 C per fig. 2. Rating is 300 W above 91 V A (2) Mounted on 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pads to each terminal Revision: 13-Dec-12 Document Number: 88367 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 P4SMA Series www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PART NUMBER DEVICE MARKING CODE UNI BI BREAKDOWN VOLTAGE VBR AT IT (1) (V) MIN. MAX. TEST CURRENT IT (mA) STAND-OFF VOLTAGE VWM (V) P4SMA6.8A 6V8A 6V8C 6.45 7.14 10 5.80 P4SMA7.5A 7V5A 7V5C 7.13 7.88 10 6.40 P4SMA8.2A 8V2A 8V2C 7.79 8.61 10 7.02 P4SMA9.1A 9V1A 9V1C 8.65 9.55 1.0 7.78 P4SMA10A 10A 10C 9.5 10.5 1.0 8.55 P4SMA11A 11A 11C 10.5 11.6 1.0 9.40 P4SMA12A 12A 12C 11.4 12.6 1.0 10.2 P4SMA13A 13A 13C 12.4 13.7 1.0 11.1 P4SMA15A 15A 15C 14.3 15.8 1.0 12.8 P4SMA16A 16A 16C 15.2 16.8 1.0 13.6 P4SMA18A 18A 18C 17.1 18.9 1.0 15.3 P4SMA20A 20A 20C 19.0 21.0 1.0 17.1 P4SMA22A 22A 22C 20.9 23.1 1.0 18.8 P4SMA24A 24A 24C 22.8 25.2 1.0 20.5 P4SMA27A 27A 27C 25.7 28.4 1.0 23.1 P4SMA30A 30A 30C 28.5 31.5 1.0 25.6 P4SMA33A 33A 33C 31.4 34.7 1.0 28.2 P4SMA36A 36A 36C 34.2 37.8 1.0 30.8 P4SMA39A 39A 39C 37.1 41.0 1.0 33.3 P4SMA43A 43A 43C 40.9 45.2 1.0 36.8 P4SMA47A 47A 47C 44.7 49.4 1.0 40.2 P4SMA51A 51A 51C 48.5 53.6 1.0 43.6 P4SMA56A 56A 56C 53.2 58.8 1.0 47.8 P4SMA62A 62A 62C 58.9 65.1 1.0 53.0 P4SMA68A 68A 68C 64.6 71.4 1.0 58.1 P4SMA75A 75A 75C 71.3 78.8 1.0 64.1 P4SMA82A 82A 82C 77.9 86.1 1.0 70.1 P4SMA91A 91A 91C 86.5 95.5 1.0 77.8 P4SMA100A 100A 100C 95.0 105 1.0 85.5 P4SMA110A 110A 110C 105 116 1.0 94.0 P4SMA120A 120A 120C 114 126 1.0 102 P4SMA130A 130A 130C 124 137 1.0 111 P4SMA150A 150A 150C 143 158 1.0 128 P4SMA160A 160A 160C 152 168 1.0 136 P4SMA170A 170A 170C 162 179 1.0 145 P4SMA180A 180A 180C 171 189 1.0 154 P4SMA200A 200A 200C 190 210 1.0 171 P4SMA220A 220A 220C 209 231 1.0 185 P4SMA250A 250A 237 263 1.0 214 P4SMA300A 300A 285 315 1.0 256 P4SMA350A 350A 333 368 1.0 300 P4SMA400A 400A 380 420 1.0 342 P4SMA440A 440A 418 462 1.0 376 P4SMA480A 480A 456 504 1.0 408 P4SMA510A 510A 485 535 1.0 434 P4SMA540A 540A 513 567 1.0 459 Notes (1) Pulse test: t 50 ms p (2) Surge current waveform per fig. 3 and derate per fig. 2 (3) All terms and symbols are consistent with ANSI/IEEE CA62.35 (4) For bi-directional types with V of 10 V and less, the I limit is doubled R D (5) V = 3.5 V at I = 25 A (uni-directional only) F F Revision: 13-Dec-12 MAXIMUM REVERSE LEAKAGE AT VWM ID (4) (A) 1000 500 200 50 10 5.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 MAXIMUM PEAK PULSE CURRENT IPPM (2) (A) 38.1 35.4 33.1 29.9 27.6 25.6 24.0 22.0 18.9 17.8 15.9 14.4 13.1 12.0 10.7 9.7 8.8 8.0 7.4 6.7 6.2 5.7 5.2 4.7 4.3 3.9 3.5 3.2 2.2 2.0 1.8 1.7 1.4 1.4 1.3 1.2 1.1 0.9 0.87 0.73 0.62 0.55 0.50 0.46 0.43 0.41 MAXIMUM CLAMPING VOLTAGE AT IPPM VC (V) MAXIMUM TEMPERATURE COEFFICIENT OF VBR (%/C) 10.5 11.3 12.1 13.4 14.5 15.6 16.7 18.2 21.2 22.5 25.2 27.7 30.6 33.2 37.5 41.4 45.7 49.9 53.9 59.3 64.8 70.1 77.0 85.0 92.0 104 113 125 137 152 165 179 207 219 234 246 274 328 344 414 482 548 602 658 698 740 0.057 0.061 0.065 0.068 0.073 0.075 0.078 0.081 0.084 0.086 0.089 0.090 0.092 0.090 0.096 0.097 0.098 0.099 0.100 0.101 0.101 0.102 0.103 0.104 0.104 0.105 0.105 0.106 0.106 0.107 0.107 0.107 0.106 0.108 0.108 0.108 0.108 0.108 0.110 0.110 0.110 0.110 0.110 0.110 0.110 0.110 Document Number: 88367 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 P4SMA Series www.vishay.com Vishay General Semiconductor THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL VALUE Typical thermal resistance, junction to ambient air (1) RJA 120 Typical thermal resistance, junction to lead RJL 30 UNIT C/ W Note (1) Mounted on minimum recommended pad layout ORDERING INFORMATION (Example)Voltage range VOLTAGE RANGE (V) UNIT WEIGHT (g) PREFERRED P/N P4SMA6.8A-E3/61 P4SMA6.8A-E3/5A PACKAGE CODE BASE QUANTITY DELIVERY MODE UNI - BI - 0.064 6.8 to 540 6.8 to 220 61 1800 7" diameter plastic tape and reel 5A 7500 13" diameter plastic tape and reel 0.064 6.8 to 540 6.8 to 220 (1) 0.064 6.8 to 540 6.8 to 220 61 1800 7" diameter plastic tape and reel P4SMA6.8AHE3/5A (1) 0.064 6.8 to 540 6.8 to 220 5A 7500 13" diameter plastic tape and reel P4SMA250AHE3_A/H (1) 0.064 250 to 540 - H 1800 7" diameter plastic tape and reel 0.064 250 to 540 - I 7500 13" diameter plastic tape and reel P4SMA6.8AHE3/61 P4SMA250AHE3_A/I (1) Note AEC-Q101 qualified (1) PPPM - Peak Pulse Power (kW) 100 Non-Repetitive Pulse Waveform shown in Fig. 3 TA = 25 C 10 P4SMA6.8A P4SMA91A P4SMA100A P4SMA220A 1 0.2 x 0.2" (5.0 x 5.0 mm) Copper Pad Areas 0.1 0.1 s 1.0 s 10 s 100 s 1.0 ms 10 ms Peak Pulse Power (PPP) or Current (IPP) Derating in Percentage, % RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 100 75 50 25 0 0 25 50 75 100 125 150 175 200 td - Pulse Width (s) TJ - Initial Temperature (C) Fig. 1 - Peak Pulse Power Rating Curve Fig. 2 - Pulse Power or Current vs. Initial Junction Temperature Revision: 13-Dec-12 Document Number: 88367 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 P4SMA Series www.vishay.com Peak Value IPPM 100 200 TJ = 25 C Pulse Width (td) is defined as the Point where the Peak Current decays to 50 % of IPPM tr = 10 s Peak Forward Surge Current (A) IPPM - Peak Pulse Current, % IRSM 150 Vishay General Semiconductor Half Value - IPP 2 IPPM 50 10/1000 s Waveform as defined by R.E.A. TJ = TJ max. 8.3 ms Single Half Sine-Wave 100 50 td 0 1.0 0 3.0 2.0 4.0 10 1 5 10 50 100 t - Time (ms) Number of Cycles at 60 Hz Fig. 3 - Pulse Waveform Fig. 6 - Maximum Non-Repetitive Forward Surge Current Uni-Directional Use Only CJ - Junction Capacitance (pF) 10 000 TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p Measured at Stand-Off Voltage VWM 1000 Uni-Directional 100 Bi-Directional 10 1 10 100 200 VBR - Breakdown Voltage (V) Fig. 4 - Typical Junction Capacitance Transient Thermal Impedance (C/W) 1000 100 10 1 0.001 0.01 0.1 1 10 100 1000 tp - Pulse Duration (s) Fig. 5 - Typical Transient Thermal Impedance Revision: 13-Dec-12 Document Number: 88367 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 P4SMA Series www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) DO-214AC (SMA) Cathode Band Mounting Pad Layout 0.110 (2.79) 0.100 (2.54) 0.065 (1.65) 0.049 (1.25) 0.177 (4.50) 0.157 (3.99) 0.012 (0.305) 0.006 (0.152) 0.060 (1.52) MIN. 0.208 (5.28) REF. 0.090 (2.29) 0.078 (1.98) 0.060 (1.52) 0.030 (0.76) 0.074 (1.88) MAX. 0.066 (1.68) MIN. 0.008 (0.203) 0 (0) 0.208 (5.28) 0.194 (4.93) Revision: 13-Dec-12 Document Number: 88367 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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