\ BCV71 BCV72 SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors, in a microminiature plastic package, intended for low level general purpose appli- cations in thick and thin-film circuits. QUICK REFERENCE DATA D.C. current gain at T; = 25 C > Ic =2mMA; Veep =5V hee < Collector-base voltage (open emitter) VCBO max. Collector-emitter voltage (open base) VcEQ max. Collector current (peak value) lcm max. 200 mA Total power dissipation up to Tamp = 25 C Prot max. 250 mw Junction temperature Tj max. 150 oC Transition frequency at f = 100 MHz lc = 10mA; Vee zh V ft > 100 MHz Noise figure at Rg = 2 kQ I = 200 uA; Vee = 5 V; f = 1kHz; B = 200 Hz F < 10 dB MECHANICAL DATA Dimensions in mm Marking code Fig. 1 SOT-23. 3.0 BCV71= K7p 2.8 (B] BCV72 = K8p Pinning: - 1 = base < 2 = emitter [oss] NS CELOUENE) 3 = collector 1? jt | 14 2.5 b ir max MBBO12 e \ 3I75 J \y 0 fa 30 0.48_5 4 }]0.1@ [A |B | 7Z96886.1 max Reverse pinning types are available on request. TOP VIEW | [sm 1994 261BCV71 BCV72 RATINGS Limiting values in accordance with the Absciute Maximum System (IEC 134) Collector-base voltage (open emitter) Collector-emitter voltage (open base) Ic=2mA Emitter-base voltage (open collector) Collector current (d.c.) Collector current (peak value) Total power dissipation up to Tamb = 25 OC Storage temperature Junction temperature THERMAL RESISTANCE From junction to ambient* CHARACTERISTICS T) = 25 C unless otherwise specified Collector cut-off current lp =0;Vcp 7 20V te = 0; Vog = 20 V; Tj = 100 oC Base emitter valtage lc =2mMA; Vee =5V Saturation voltages Ic = 10 mA; lg =0,5 mA I = 50 mA; Ig = 2,5 mA D.C. current gain lc = 10nA; Vcp=5V hee Ic=2mA;VceE=5V Nee Collector capacitance at f = 1 MHz le =Ie=0; Veg = 10V Cy Transition frequency at f = 100 MHz le = 10mA; Veg = 5 V fr Noise figure at Rg = 2 kQ. Ic = 200 uA; Veep =5V f= 1 kHz; B = 200 Hz F * Mounted on an FR4 printed-circuit board 8 mm x 10 mm x 0.7 mm. VcBo VCEO VEBO le lom Prot T stg qj Rth j-a ICBO ICBO VBE VCEsat VBEsat VCEsat VBEsat max. 80 max. 60 max. 5 max. 100 max. 200 max. 250 65 to + 150 max. 150 = 500 < 100 < 10 550 to 700 typ. 120 < 250 typ. 750 typ. 210 typ. 850 BCV71 BCV?72 typ. AN typ. A 90 150 110 200 220 450 2,5 100 10 Vv Vv Vv mA mA mw oC C iK/W nA pA mV mV mV mV mV mV pF MHz dB 262 September 1994