G E SOLID STATE O1 DE [J 3875001 00479949 3 a 3875081 GE SOLID STATE S1E 17999 D f TT: 3 { -2 Unijunction Transistors and Switches 2N2646, 2N2647, GES2646, GES2647 Silicon Unijunction Transistors TO-92 TO-18 The GE/RCA 2N2646, GES2646 and 2N2647, GES2647 silicon-unijunction transistors have an entirely new structure resulting in lower saturation voltage, peak-point current and valley current as well as a much higher base-one peak pulse voltage. In addition, these devices are much faster switches. The 2N2646 and GES2646 are intended for general purpose industrial applications where circuit economy is of primary importance, and is ideal for use in firing clrcuits for Silicon MAXIMUM RATINGS, Absolute-Maximum Values: EMITTER REVERSE VOLTAGE INTERBASE VOLTAGE ............. AMS EMITTERCURRENT........... PEAK EMITTER CURRENT (Note 1) POWER DISSIPATION (Note2)........ OPERATING TEMPERATURE RANGE..............-.- STORAGE TEMPERATURERANGE...............000000. 00sec NOTES: 1. Capacitor discharge 10uF or less, 30 V or less. Controlled Rectifiers and other applications where a guaranteed minimum pulse amplitude is required. The 2N2647 and GES2647 are intended for applications where a low emitter leakage current and a low peak point emitter current (trigger current) are required (i.e., long timing applications), and also for triggering high power SCRs. These types are supplied in JEDEC TO-18 package (2N2646, 2N2647) and in JEDEC TO-92 packages (GES2646, GES2647). - 65 to + 125C cece eee e eee ee eee e tenn e teeta - 65 to + 150C 2. Derate 3 mW/C increase in ambient temperature. The total power dissipation (available power to Emitter and Base-Two) must be limited by the external circuitry. EMITTER yw VOLTAGE lp +20V +0.5V curorrele- RESISTANCE ole- SATURATION O REGION REGION I REGION Ye IX PEAKFOINT | lg I I 82 I 4 Vaptlov | EMITTER-T0-BASE ) Vea _ ' l ONE-DIODE ! CHARACTERISTI 84 Vos, t { Ve a I t 7 VALLEY POINT 0.2 uF Ra, Ve (sa it --- oS pe | tse zon 1% vy! ' EMITTER O ! Ig2*0 ' | CURRENT 92cs-42400 = o2ts-4z399 Ee { ! le ; a : Iv SOMA Fig. 1--Unijunction transistor symbol _- Fig. 2 Typical base-1 peak-pulse ee 92Cs-42401 and nomenclature used for voltage circuit. 0 current and voltage circuit. Fig. 3 Static emitter characteristics waveforms, File Number 2047 103G E SOLID STATE Ol DEM 3875081 oo1sooo 4 I 3875081 G E SOLID STATE O1E 18000 D \ ~"Unijiinction Transistors and Switches T 37 ' 2/ 2N2646, 2N2647, GES2646, GES2647 ELECTRICAL CHARACTERISTICS, At Ambient Temperature (Ty) = 25C Unless Otherwise Specified LIMITS CHARACTERISTICS SYMBOL 2N2646,GES2646 2N2647,GES2647 UNITS MIN. TYP. | MAX. MIN. TYP. MAX Intrinsic Standoff Ratic (Vee = 10V) n 0.56 0,69 0.75 0.68 0.77 0.82 - Interbase Resistance (ep = 3V, le = 0) R, 4.7 6.7 9.4 4.7 6.7 9.1 kQ Emitter Saturation Voltage (Vp = 10 V, le = 50 mA) Ve(sat) =_ 2 - - 2 - v Modulated Interbase Current (Vpp = 10 Vite = 0mA_| Ipo(med) - 24 - - 27 - mA Emitter Reverse Current (Va2 = S0V, Inj = 0) on 0.001 12 _ 0.001 | 0.2 pA Peak Point Emitter Current (pp = 25) Ip - 0.8 5 ~ 1 2 Vailey Point Current (Vag = 20V, Rao = 1009) ly 4 5 - 8 9 18 mA Base-One Peak Pulse Voltage (Note 1)(Fig. 2) Voy 3 8.5 - 6 9.5 - v NOTES: 1, The Base-1 peak pulse voltage Is measured in the circuit below. This spacification on the 2N2646 and 2N2647 Is used to ensure a minimum pulse amplitude for applications in SCR firing circuits and other types of pulse circults. 2. SCR firing conditionssee Figs. 19, 20, 21, and 22, Vep* 20V Veg tov "Sv EMITTER-TO- BASE VOLTAGE t Veg-v INTERBASE SUPPLY VOLTAGE (Vagi-Vv 6 8 0 4% 8 10 12 14 16 18 20 EMITTER CURRENT (I)-mA T Cgh-m orcs-az30s BASE 2 CURRENT (Iga} mA e2csa2ace Fig. 4 Typical static emitter characteristics. Fig. 5 Typical static interbase characteristics PEAK POINT CURRENT (Ip)na 2g 2 40 TEMPERATURE (Ty c MTERBA! Vv ~ INTERBASE VOLTAGE (Vap) eacs-azsen 92CS- 42502 Fig, 6 Typical peak point current characteristics. Fig. 7Typical emitter reverse currant characteristics, 104G E SOLID STATE OL De f3a7sos1 oo1eoo. oo 3875081 GE SOLID STATE O1E 16001 D Unijunction Transistors and Switches 2N2646, 2N2647, GES2646, GES2647 T3702 16 AMBIENT TEMPERATURE (Ta)=28C 14 BASE { CURRENT (Ig)}#0 N NORMALIZED Ig, (MOD) Vs TEMP = ta} | | { | b NN = NORMALIZED VeQ, (sal) Vs TEMP z 1 MS t a a S08 IN a tl z 4 20.6 -T% -50 -25 0 28 80 75 100 {25 150 EMITTER BASE 2 REVERSE VOLTAGE (Vpo}-V AMBIENT TEMPERATURE (Ta]*C 9205-42583 92Cs=42504 Fig. 8 Typical emitier reverse current characteristics. Fig. 9-- Normalized base-2 current and base-1 saturation voltage characteristic, BASE SUPPLY VOLTAGE (Vag)=3V EMITTER CURRENT (IE}=0 a ~~ INTERBASE CURRENT (Ig) mA 2 a NORMALIZED INTERBASE RESISTANCE o a 75 INTERBASE SUPPLY VOLTAGE (Vgp) xNORMALIZED JUNCTION TEMPERATION (Ty)=C INTERBASE RESISTANCE (Kal-V 9208-42310 9203-42564 Fig. 10-- Typical interbase characteristics. Fig. 11 Normalized interbase resistance characteristic, interbase characteristics at any junction temperature may be determined by dividing the horizontal scale by K,, seo Fig. 11. AMBIENT TEMPERATURE EMITTER CURRENT (Ip)}* * oO & AMBIENT TEMPERTURE (T, )#25C 2 2 o p Q. fa i) bE w = = = o WW y a = 2 & S = 2 8 NORMALIZED INTERBASE RESISTANCE & INTERBASE SUPPLY VOLTAGE (Vagi-V INTERBASE SUPPLY VOLTAGE (Vga)-V 9203-42565 92C$-42566 Fig. 12Normalized base-2 current and base-1 saturation voltage Fig. 13 Normalized interbase resi: h characteristics. 105G E SOLID STATE O1 a 3475081 001600e e i Unijunction Transistors and Switches T 3 *) 2 | 2N2646, 2N2647, GES2646, GES2647 | t4]GASE SUPPLY VOLTAGE (Vga) = 6V TO 20v w 90% LIMITS 2 Z 2 > wi wo J 2 o 1 5 a % 08 < a a w N 3 06 a = ec ? iff | |: 75-50-25 5 80 75 100 i25 150 INTERBASE SUPPLY VOLTAGE (Vgg)-V AMBIENT TEMPERATURE (T,a)* 92$-42579 g2CS- 42576 Fig. 14 Valley point current vs. base voltage, for 2N2646 only. Fig. 15Normalized base 1 peak-pulse voltage vs. ambient temperature. BASE SUPPLY VOL w = a 8 > 4 5 a = wi a T w a @ a PULSE AMPLITUDE {Vp)~V 02 O04 O58 O08 1 12014 16 48 TRIGGER PULSE WIDTH= ns 923-42577 CAPACITANCE (Cy) pF 9208-42581 Fig. 16Minimum trigger pulse amplitude vs. trigger pulse width Fig. 17 Normalized base 1 peak pulse voltage vs. capacitance. for turn-on of unijunction transistor 30 35 40 10 15 20 25 INTERBASE VOLTAGE (Vgg)-V 9268-42567 Fig. 18 Normalized base 1 peak pulse voltage vs. interbase voltage. 106 _rG E SOLID STATE OL pe Baszsoai 0018003 4 i 3875081 GE SOLID STATE DIE 18003 D Unijunction Transistors and Switches 2N2646, 2N2647, GES2646, GES2647 T3772] A = w @ 5 8 > > ay a a 3 a = > = z = 4 AMBIENT TEMPERATURE (Tale TO 425C NOTE: 0.01 o1 1 10 35-2NGST-92 CAPACITANCE (Cy)-pF C34-2N1042-50 9205-42573 CAD-2NITTOA-TTA C11-2N1770-78 Fig. 19~Minimum supply voliage characteristics. See Fig. 20 for circuit and curve data. 9208-4257 Fig. 20 Circuit for minimum supply voltage curves, Fig. 19. curve | $CR TYPE Rat vm a 40(2N2023-30) 271+ 10% Sv c C82(2N1702-98) | 47 10% Ov C50(2N 1808-16) PULSE av C45 AND C48 TRANS, $030,40,50 AND PE2z31 140 SERIES MINIMUM SUPPLY RANGE oO! CAPACITANCE~ (Cy)- pF 92cs-4z574 92C8-42572 Fig. 21 Minimum supply voltage characteristics. See Fig. 22 for circuit andcurve data. Fig. 22Circuit for minimum supply voltage curves, Fig. 21. TERMINAL CONNECTIONS TERMINAL CONNECTIONS TO-92 TO-18 Lead 1 - Emitter Lead 1 - Emitter Lead 2 - Base 1 Lead 2 - Base 1 Lead 3 - Base 2 Lead 4 - Base 2 107