© Semiconductor Components Industries, LLC, 2012
May, 2012 − Rev. 4
1Publication Order Number:
TIP33C/D
TIP33A, TIP33C
NPN High-Power Transistors
Designed for general−purpose power amplifier and switching
applications.
Features
•ESD Ratings: Machine Model, C; > 400 V
Human Body Model, 3B; > 8000 V
•Epoxy Meets UL 94 V−0 @ 0.125 in
•These are Pb−Free Devices*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector − Emitter Voltage TIP33A
TIP33C
VCEO 60
100
Vdc
Collector − Base Voltage TIP33A
TIP33C
VCBO 60
100
Vdc
Emitter − Base Voltage VEBO 5.0 Vdc
Collector Current − Continuous
− Peak (Note 1)
IC10
15
Adc
Apk
Base Current − Continuous IB3.0 Adc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD80
0.64
Watts
W/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg – 65 to
+150
°C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 1.56 °C/W
Thermal Resistance, Junction−to−Ambient RqJA 35.7 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
10 AMPERE
NPN SILICON
POWER TRANSISTORS
60 & 100 VOLT, 80 WATTS
SOT−93 (TO−218)
CASE 340D
STYLE 1
TO−247
CASE 340L
STYLE 3
NOTE: Effective June 2012 this device will
be available only in the TO−247
package. Reference FPCN# 16827.
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
TIP33A, TIP33C
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2
MARKING DIAGRAMS
AYWWG
TIP33x
TIP33x
AYWWG
1 BASE
2 COLLECTOR
3 EMITTER
TIP33x = Device Code
A = Assembly Location
Y = Year
WW = Work Week
G=Pb−Free Package
1 BASE
2 COLLECTOR
3 EMITTER
TO−247
TO−218
ORDERING INFORMATION
Device Order Number Package Type Shipping
TIP33AG TO−218
(Pb−Free)
30 Units / Rail
TIP33CG TO−218
(Pb−Free)
30 Units / Rail
TIP33AG TO−247
(Pb−Free)
30 Units / Rail
TIP33CG TO−247
(Pb−Free)
30 Units / Rail
TIP33A, TIP33C
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3
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2) TIP33A
(IC = 30 mA, IB = 0) TIP33C
VCEO(sus) 60
100
−
−
Vdc
Collector−Emitter Cutoff Current
(VCE = 30 V, IB = 0) TIP33A
(VCE = 60 V, IB = 0) TIP33C
ICEO −0.7 mA
Collector−Emitter Cutoff Current
(VCE = Rated VCEO, VEB = 0)
ICES −0.4 mA
Emitter−Base Cutoff Current
(VEB = 5.0 V, IC = 0)
IEBO −1.0 mA
ON CHARACTERISTICS (Note 2)
DC Current Gain
(IC = 1.0 A, VCE = 4.0 V)
(IC = 3.0 A, VCE = 4.0 V)
hFE
40
20
−
100
−
Collector−Emitter Saturation Voltage
(IC = 3.0 A, IB = 0.3 A)
(IC = 10 A, IB = 2.5 A)
VCE(sat)
−
−
1.0
4.0
Vdc
Base−Emitter On Voltage
(IC = 3.0 A, VCE = 4.0 V)
(IC = 10 A, VCE = 4.0 V)
VBE(on)
−
−
1.6
3.0
Vdc
DYNAMIC CHARACTERISTICS
Small−Signal Current Gain
(IC = 0.5 A, VCE = 10 V, f = 1.0 kHz)
hfe 20 − −
Current−Gain — Bandwidth Product
(IC = 0.5 A, VCE = 10 V, f = 1.0 MHz)
fT3.0 −MHz
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
TIP33A, TIP33C
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4
Figure 1. DC Current Gain
IC, COLLECTOR CURRENT (A)
0.1 1.0
5.0
10
10
20
100
500
hFE, DC CURRENT GAIN
200
50
NPN
PNP
VCE = 4.0 V
TJ = 25°C
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10 201.0 50 100
Figure 2. Maximum Rated Forward Bias
Safe Operating Area
1.0
0.1
2.0
SECONDARY BREAKDOWN LIMIT
BONDING WIRE LIMIT
THERMAL LIMIT
1.0ms
dc
300ms
5.0
3.0
15
10
IC, COLLECTOR CURRENT (AMPS)
10ms
0.2
0.5
2.0 3.0 5.0 7.0 30 70
TC = 25°C
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
600 80 100
Figure 3. Maximum Rated Forward Bias
Safe Operating Area
0
10
15
20
IC, COLLECTOR CURRENT (AMPS)
5.0
20 40
L = 200 mH
IC/IB ≥ 5.0
VBE(off) = 0 to 5.0 V
TC = 100°C
TIP33A
TIP33C
FORWARD BIAS
The Forward Bias Safe Operating Area represents the
voltage and current conditions these devices can withstand
during forward bias. The data is based on TC = 25_C; TJ(pk)
is variable depending on power level. Second breakdown
pulse limits are valid for duty cycles to 10%, and must be
derated thermally for TC > 25_C.
REVERSE BIAS
The Reverse Bias Safe Operating Area represents the
voltage and current conditions these devices can withstand
during reverse biased turn−off. This rating is verified under
clamped conditions so the device is never subjected to an
avalanche mode.
TIP33A, TIP33C
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5
PACKAGE DIMENSIONS
SOT−93 (TO−218)
CASE 340D−02
ISSUE E
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
A
D
V
G
K
SL
U
BQ
123
4
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
E
C
J
H
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A--- 20.35 --- 0.801
B14.70 15.20 0.579 0.598
C4.70 4.90 0.185 0.193
D1.10 1.30 0.043 0.051
E1.17 1.37 0.046 0.054
G5.40 5.55 0.213 0.219
H2.00 3.00 0.079 0.118
J0.50 0.78 0.020 0.031
K31.00 REF 1.220 REF
L--- 16.20 --- 0.638
Q4.00 4.10 0.158 0.161
S17.80 18.20 0.701 0.717
U4.00 REF 0.157 REF
V1.75 REF 0.069
TO−247
CASE 340L−02
ISSUE F
N
P
A
K
W
F
D
G
U
E
0.25 (0.010) MYQS
J
H
C
4
123
−T−
−B−
−Y−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
2 PL
3 PL
0.63 (0.025) MTBM
−Q−
LDIM MIN MAX MIN MAX
INCHESMILLIMETERS
A20.32 21.08 0.800 8.30
B15.75 16.26 0.620 0.640
C4.70 5.30 0.185 0.209
D1.00 1.40 0.040 0.055
E1.90 2.60 0.075 0.102
F1.65 2.13 0.065 0.084
G5.45 BSC 0.215 BSC
H1.50 2.49 0.059 0.098
J0.40 0.80 0.016 0.031
K19.81 20.83 0.780 0.820
L5.40 6.20 0.212 0.244
N4.32 5.49 0.170 0.216
P--- 4.50 --- 0.177
Q3.55 3.65 0.140 0.144
U6.15 BSC 0.242 BSC
W2.87 3.12 0.113 0.123
STYLE 3:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
TIP33A, TIP33C
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6
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Phone: 81−3−5817−1050
TIP33C/D
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